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    Process for producing flip-chip type semiconductor device and semiconductor device produced by the process
    6.
    发明申请
    Process for producing flip-chip type semiconductor device and semiconductor device produced by the process 审中-公开
    用于制造倒装芯片型半导体器件的工艺和通过该工艺生产的半导体器件

    公开(公告)号：US20070134844A1

    公开(公告)日：2007-06-14

    申请号：US11637102

    申请日：2006-12-12

    申请人： Kaoru Katoh ,  Masatoshi Asano ,  Hiroyuki Takenaka ,  Kazuaki Sumita

    发明人： Kaoru Katoh ,  Masatoshi Asano ,  Hiroyuki Takenaka ,  Kazuaki Sumita

    IPC分类号： H01L21/00

    CPC分类号： H01L21/563 ,  C08G59/245 ,  H01L23/293 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2924/01012 ,  H01L2924/10253 ,  H01L2924/00

    摘要： The invention relates to a process for producing a semiconductor device in which a circuit substrate and a semiconductor chip are connected through a plurality of solder bump electrodes, said process comprising applying a non-cleaning type flux to at least a portion of a bonding pad in the circuit substrate and a semiconductor chip; applying an under-fill material to the circuit substrate or the semiconductor chip; positioning the semiconductor chip and the circuit substrate; and bonding the semiconductor chip and the circuit substrate through a thermocompression bonding, and a semiconductor device produced by the process. By using the process, since it is not necessary to add a flux component deteriorating the reliability of an under-fill material as the sealant to the under-fill material, reliability of the semiconductor device is not deteriorated. Further, since the intrusion step of thin film is not used, mounting can be conducted in a relatively short time.

    摘要翻译： 本发明涉及一种用于制造半导体器件的方法，其中电路衬底和半导体芯片通过多个焊料凸块电极连接，所述工艺包括将非清洁型焊剂施加到焊盘的至少一部分中 电路基板和半导体芯片; 将欠补充材料施加到电路基板或半导体芯片; 定位半导体芯片和电路基板; 以及通过热压接接合半导体芯片和电路基板，以及通过该工艺制造的半导体器件。 通过使用该方法，由于不需要将劣化作为密封剂的填充不足的材料的可靠性劣化到补充材料，因此不会劣化半导体器件的可靠性。 此外，由于不使用薄膜的侵入步骤，因此可以在较短的时间内进行安装。