摘要:
To suppress a separation of working fluid from the vane surface during operation at and around a fluid coupling condition attained after a substantial completion of torque conversion, the aerofoil and the array of stator vanes of a torque converter for vehicles are arranged such that a pressure side leading edge area and a suction side trailing edge area of the vane respectively satisfy the following conditions based upon the parameters assumed in FIG. 2:(D.sub.L -D.sub.LMIN)/D.sub.LSL .ltoreq.0.38(X.sub.L /S.sub.L -0.08).sup.1.7(D.sub.T -D.sub.TMIN)/D.sub.TST .ltoreq.0.36(X.sub.T /S.sub.T -0.45).sup.1.7
摘要:
In the zoom lens, the second lens group includes at least one surface that is an aspheric surface, and during changing magnification, the second lens group, the third lens group, and the fourth lens group are respectively capable of moving independently, with the position of the aperture moving along a convex trajectory on the optical axis from the image side to the object side during changing magnification. Through operation in this manner, the zoom lens of the invention is inexpensive and compact, and efficiently corrects various types of aberration. Thus, at a high magnification ratio of 5× or greater, the zoom lens of the invention affords a wide field exceeding approximately 78 degrees at the wide angle end, and affords a high performance compact zoom lens whose distortion is held to 3% or less.
摘要:
In order to provide excellent device characteristics and enhance fabrication yield and run-to-run reproducibility in a buried device structure using a low mesa on a p-type substrate, a cross sectional configuration before growth of a contact layer of a device, i.e., after growth of an over-cladding layer is flattened so as not to cause a problem in crystal quality of the contact layer. A mesa-stripe stacked body including at least a p-type cladding layer (2), an active layer (4) and an n-type cladding layer (6) is formed on a p-type semiconductor substrate (1), a current-blocking layer (8) is buried in both sides of the stacked body, and an n-type over-cladding layer (9) and an n-type contact layer (10) are disposed on the current-blocking layer (8) and the stacked body. The n-type over-cladding layer (9) is made of a semiconductor crystal having a property for flattening a concavo-convex shape of upper surfaces of the current-blocking layer (8) and the stacked body.
摘要:
A mechanical cam type zoom lens device includes a movement position detector detecting movement positions of focus and zoom lenses moved by respective drivers, a reference compensation value calculating unit setting a plurality of zooming positions for a zoom lens when a focus lens is located at a predetermined focusing position and calculating an amount of movement from a predetermined focusing position in a case where the focus lens is adjusted to be in focus when the zoom lens is located at each set zooming position, the calculated amount of movement serving as a reference compensation value, a storage storing data of the reference compensation values, a focusing compensation value calculating unit calculating a focusing compensation value for the focus lens in a case where the zoom lens is located at the movement position, based on the set zooming positions, the reference compensation value read from the storage and the movement position of the zoom lens, and a focusing unit focusing the focus lens based on the calculated focusing compensation value so that the focus lens is focalized.
摘要:
A semiconductor optical device includes a multilayer structure and buried layers. The multilayer structure is constituted by a cladding layer having an n-type conductivity, an active region formed from an active layer or photoabsorption layer, and a cladding layer having a p-type conductivity which are successively formed on a semiconductor substrate having the first crystallographic orientation. The buried layers are made of a ruthenium-doped semi-insulating semiconductor crystal and formed on two sides of the mesa-stripe-like multilayer structure. The electrically activated ruthenium concentration in the ruthenium-doped semi-insulating semiconductor crystal grown on the growth surface having the second crystallographic orientation which is formed in the process of growing the semi-insulating semiconductor crystal is substantially equal to or higher than the electrically activated ruthenium concentration in the ruthenium-doped semi-insulating semiconductor crystal grown on the growth surface having the first crystallographic orientation wherein the second crystallographic orientation is different from the first crystallographic orientation. An integrated light source and a method of manufacturing a semiconductor optical device are also disclosed.
摘要:
A semiconductor optical device includes a semiconductor substrate and a stacked body formed by at least a first cladding layer, an active region and a second cladding layer; wherein both sides of the stacked body are buried by a burying layer formed by a semi-insulating semiconductor crystal; the burying layer includes a first layer that is placed adjacent to both sides of the stacked body and a second layer that is placed adjacent to the first layer; the first layer includes Ru as a dopant; composition of the second layer is different from the composition of the first layer, or a dopant of the second layer is different from the dopant of the first layer. The device can also be configured such that the width of the active region is smaller than the width of the cladding layers of the stacked body; and a Ru-doped semi-insulating layer is provided in a space between the burying layer and the active region in both sides of the active region.
摘要:
A mechanical cam type zoom lens device includes a movement position detector detecting movement positions of focus and zoom lenses moved by respective drivers, a reference compensation value calculating unit setting a plurality of zooming positions for a zoom lens when a focus lens is located at a predetermined focusing position and calculating an amount of movement from a predetermined focusing position in a case where the focus lens is adjusted to be in focus when the zoom lens is located at each set zooming position, the calculated amount of movement serving as a reference compensation value, a storage storing data of the reference compensation values, a focusing compensation value calculating unit calculating a focusing compensation value for the focus lens in a case where the zoom lens is located at the movement position, based on the set zooming positions, the reference compensation value read from the storage and the movement position of the zoom lens, and a focusing unit focusing the focus lens based on the calculated focusing compensation value so that the focus lens is focalized.
摘要:
A motor according to the present invention is a motor using a rotor 5 including two first rotator portions 2, each having a permanent magnet 1, and a second rotator portion 3 having magnetic saliency inserted therebetween, coupled in a direction of a rotating shaft 4, and part of the rotor 5 is replaced with a reluctance motor, whereby an amount of the permanent magnet 1 is reduced, thus making it possible to reduce generated voltage. Further, there are provided the first rotator portion 2 on both sides of the second rotator portion 3, whereby the second rotator portion 3 is magnetically saturated through the effective use of going-round 18 of magnetic flux to raise salient ratio. Thus, reluctance torque caused in the second rotator portion 3 is increased, whereby it is possible to increase torque as a whole and to obtain a high-output motor.
摘要:
A semiconductor optical device includes a semiconductor substrate and a stacked body formed by at least a first cladding layer, an active region and a second cladding layer; wherein both sides of the stacked body are buried by a burying layer formed by a semi-insulating semiconductor crystal; the burying layer includes a first layer that is placed adjacent to both sides of the stacked body and a second layer that is placed adjacent to the first layer; the first layer includes Ru as a dopant; composition of the second layer is different from the composition of the first layer, or a dopant of the second layer is different from the dopant of the first layer. The device can also be configured such that the width of the active region is smaller than the width of the cladding layers of the stacked body; and a Ru-doped semi-insulating layer is provided in a space between the burying layer and the active region in both sides of the active region.
摘要:
A motor includes a rotor with interior permanent magnets and a stator with teeth wound by concentrated windings. Each permanent magnet is split along a plane oriented towards the stator, and an electrically insulating section is set between the spilt magnet pieces. This structure allows each permanent magnet to be electrically split, thereby restraining the production of an eddy current. As a result, heat-production is dampened thereby preventing heat demagnetization of the permanent magnets.