公开(公告)号：US20120108011A1

公开(公告)日：2012-05-03

申请号：US13341668

申请日：2011-12-30

申请人： Masayuki HATA ,  Tadao TODA ,  Shigeyuki OKAMOTO ,  Daijiro INOUE ,  Yasuyuki BESSHO ,  Yasuhiko NOMURA ,  Tsutomu YAMAGUCHI

发明人： Masayuki HATA ,  Tadao TODA ,  Shigeyuki OKAMOTO ,  Daijiro INOUE ,  Yasuyuki BESSHO ,  Yasuhiko NOMURA ,  Tsutomu YAMAGUCHI

IPC分类号： H01L21/78

CPC分类号： H01L33/007 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/0075 ,  H01L33/0079 ,  H01L2224/48091 ,  H01S5/0202 ,  H01S5/02212 ,  H01S5/02276 ,  H01S5/0422 ,  H01S5/0425 ,  H01S5/0683 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/305 ,  H01S5/3063 ,  H01S5/3211 ,  H01S5/34333 ,  H01S2304/04 ,  H01S2304/12 ,  H01L2924/00014

摘要： A semiconductor device capable of stabilizing operations thereof is provided. This semiconductor device comprises a substrate provided with a region having concentrated dislocations at least on part of the back surface thereof, a semiconductor element layer formed on the front surface of the substrate, an insulator film formed on the region of the back surface of the substrate having concentrated dislocations and a back electrode formed to be in contact with a region of the back surface of the substrate other than the region having concentrated dislocations.

摘要翻译： 提供能够稳定其操作的半导体器件。 该半导体器件包括：衬底，其具有至少部分后表面具有浓集位错的区域，形成在衬底的前表面上的半导体元件层，形成在衬底的背面的区域上的绝缘膜 具有集中位错和形成为与除了具有集中位错的区域以外的基板的背面的区域接触的背面电极。