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公开(公告)号：US07087530B2
公开(公告)日：2006-08-08
申请号：US10689680
申请日：2003-10-22
IPC分类号： H01L21/302
CPC分类号： C09G1/02 , C09K3/1463 , H01L21/31053
摘要： The invention provides an aqueous dispersion for chemical mechanical polishing that can limit scratches of a specific size to a specific number, even with interlayer insulating films with small elastic moduli (silsesquioxane, fluorine-containing SiO2, polyimide-based resins, and the like.). When using the aqueous dispersion for chemical mechanical polishing of an interlayer insulating film with an elastic modulus of no greater than 20 GPa as measured by the nanoindentation method, the number of scratches with a maximum length of 1 μm or greater is an average of no more than 5 per unit area of 0.01 mm2 of the polishing surface. An aqueous dispersion for CMP or an aqueous dispersion for interlayer insulating film CMP according to another aspect of the invention contains a scratch inhibitor agent and an abrasive. The scratch inhibitor may be biphenol, bipyridyl, 2-vinylpyridine, salicylaldoxime, o-phenylenediamine, catechol, 7-hydroxy-5-methyl-1,3,4-triazaindolizine, and the like. The abrasive may consist of inorganic particles, organic particles or organic/inorganic composite particles. The organic/inorganic composite particles may be formed by polycondensation of an alkoxysilane, aluminum alkoxide, titanium alkoxide, and the like in the presence of polymer particles of polystyrene or the like, and bonding of polysiloxane, and the like, on at least the surface of the polymer particles.
摘要翻译： 本发明提供了一种用于化学机械抛光的水分散体，即使使用具有小弹性模量的层间绝缘膜（倍半硅氧烷，含氟SiO 2，聚酰亚胺 - 基树脂等）。 当通过纳米压痕法测量的弹性模量不大于20GPa的层间绝缘膜的化学机械抛光使用水性分散体时，最大长度为1μm或更大的划痕数是不超过平均值 比抛光表面的0.01mm 2单位面积的5个。 根据本发明另一方面，用于CMP的水分散体或用于层间绝缘膜CMP的水性分散体含有防刮剂和研磨剂。 刮擦抑制剂可以是联苯酚，联吡啶基，2-乙烯基吡啶，水杨醛肟，邻苯二胺，邻苯二酚，7-羟基-5-甲基-1,3,4-三氮杂多卡因等。 研磨剂可以由无机颗粒，有机颗粒或有机/无机复合颗粒组成。 有机/无机复合颗粒可以通过在聚苯乙烯等的聚合物颗粒的存在下的烷氧基硅烷，烷氧基铝，烷氧基钛等的缩聚以及聚硅氧烷等的至少表面 的聚合物颗粒。
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公开(公告)号：US06786944B2
公开(公告)日：2004-09-07
申请号：US10412385
申请日：2003-04-14
IPC分类号： C09G102
CPC分类号： C09G1/02 , C09K3/1409 , C09K3/1463 , H01L21/31053
摘要： An aqueous dispersion for chemical mechanical polishing that is hard to putrefy, scarcely causes scratches, causes only small dishing and is suitable for used in a micro isolating step or a planarizing step of an inter layer dielectric in production of semiconductor devices, which dispersion comprises ceria particles, a preservative composed of a compound having a heterocyclic structure containing a nitrogen atom and a sulfur atom in the ring, such as an isothiazolone compound, and an organic component such as organic abrasive grains composed of resin particles, a dispersing agent composed of a water-soluble polymer having a specific molecular weight or the like, a surfactant and/or an organic acid or a salt thereof contained in an aqueous medium, wherein the ceria particles, preservative and organic component are contained in proportions of 0.1 to 20% by mass, 0.001 to 0.2% by mass and 0.1 to 30% by mass, respectively, when the total proportion of the aqueous medium, ceria particles, preservative and organic component is 100% by mass, and wherein the pH of this aqueous dispersion can be kept in a neutral range.
摘要翻译： 用于化学机械抛光的水性分散体难以腐蚀，几乎不引起划痕，仅导致小的凹陷，并且适合用于半导体器件生产中的微层间电介质的微隔离步骤或平面化步骤，该分散体包括二氧化铈 颗粒，由具有在环中含有氮原子和硫原子的杂环结构的化合物组成的防腐剂，例如异噻唑酮化合物，以及有机成分，例如由树脂颗粒组成的分散剂，由 包含在水性介质中的具有特定分子量的水溶性聚合物，表面活性剂和/或有机酸或其盐，其中二氧化铈颗粒，防腐剂和有机组分的含量为0.1〜20％ 质量，0.001〜0.2质量％和0.1〜30质量％，当水性介质，二氧化铈颗粒， 防腐剂和有机成分为100质量％，并且其中该水分散体的pH可以保持在中性范围。
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3.发明授权METHOD OF PRODUCTION OF COMPOSITED PARTICLE, COMPOSITED PARTICLE PRODUCED BY THIS METHOD AND AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING CONTAINING THIS COMPOSITED PARTICLE, AND METHOD OF PRODUCTION OF AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING 有权生产复合颗粒的方法，通过该方法生产的复合颗粒和含有该组合物的化学机械抛光的水性分散体，以及用于生产化学机械抛光的水性分散体的方法公开(公告)号：US06582761B1
公开(公告)日：2003-06-24
申请号：US09716384
申请日：2000-11-21
IPC分类号： B05D136
CPC分类号： C08J3/12 , C08J3/215 , C08K2201/013 , C09G1/02 , C09K3/1436 , C09K3/1445 , C09K3/1454 , H01L21/31058 , H01L21/3212 , Y10T428/2991 , Y10T428/2995
摘要： The present invention relates to a method for producing a composited particle in which an inorganic particle is not released, a composited particle produced by this method, and an aqueous dispersion for CMP containing this composited particle. The method for producing a composited particle of the present invention comprises forming a preliminary particle by adhering one or more types of inorganic particles on at least a part of the surface area of a polymer particle, then, polycondensing at least one selected from among organosilicon compounds and organometal compounds in the presence of the above-mentioned preliminary particle.
摘要翻译： 本发明涉及无机颗粒不释放的复合颗粒的制造方法，通过该方法制造的复合颗粒和含有该复合颗粒的CMP的水性分散体。 本发明的复合粒子的制造方法包括：在聚合物粒子的表面积的至少一部分上粘附一种以上的无机粒子，然后将选自有机硅化合物 和有机金属化合物在上述初步颗粒存在下进行。
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4.发明授权Aqueous dispersion composition for chemical mechanical polishing for use in manufacture of semiconductor devices 有权用于制造半导体器件的化学机械抛光用水性分散体组合物公开(公告)号：US06447695B1
公开(公告)日：2002-09-10
申请号：US09655305
申请日：2000-09-05
IPC分类号： C09K1300
CPC分类号： C09G1/02 , H01L21/3212
摘要： The present invention provides an aqueous dispersion composition for chemical mechanical polishing which is useful for the manufacture of semiconductor devices, and which for polishing of different types of working films and barrier metal layers formed on semiconductor substrates, can achieve efficient polishing particularly of barrier metal surfaces and can give adequately flattened and high precision finished surfaces. The aqueous dispersion composition for chemical mechanical polishing has properties such that, when polishing a copper film, a tantalum layer and/or tantalum nitride layer a and an insulating film under the same conditions, the ratio (RCu/RTa) between the polishing rate of the copper film (RCu) and the polishing rate of the tantalum layer and/or tantalum nitride layer (RTa) is no greater than 1/20, and the ratio (RCu/RIn) between the polishing rate of the copper film (RCu) and the polishing rate of the insulating film (RIn) is from 5 to ⅕. RCu/RTa is preferably no greater than {fraction (1/30)}, especially no greater than {fraction (1/40)} and most preferably no greater than {fraction (1/50)}, while RCu/RIn is preferably 4¼, especially 3⅓ and more preferably 2½.
摘要翻译： 本发明提供了一种用于化学机械抛光的水性分散组合物，其用于制造半导体器件，并且用于抛光形成在半导体衬底上的不同类型的工作膜和阻挡金属层，可以实现特别是阻挡金属表面的高效抛光 并可以给予适当扁平和高精度的成品表面。 用于化学机械抛光的水性分散组合物具有这样的特性，即在相同条件下对铜膜，钽层和/或氮化钽层a和绝缘膜进行研磨时，抛光速率之间的比（RCu / RTa） 铜膜（RCu）和钽层和/或氮化钽层（RTa）的研磨速度不大于1/20，铜膜（RCu）的研磨速度之比（RCu / RIn） 绝缘膜（RIn）的研磨速度为5〜 RCu / R a优选不大于{分数（1/30）}，特别是不大于{分数（1/40）}，最优选不大于{分数（1/50）}，而RCu / RIn优选 4¼，特别是3 1/3，更优选为2½。
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5.发明授权Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method 有权化学机械抛光水性分散体和化学机械抛光方法公开(公告)号：US07550020B2
公开(公告)日：2009-06-23
申请号：US11180619
申请日：2005-07-14
CPC分类号： H01L21/31053 , C09G1/02
摘要： A chemical mechanical polishing aqueous dispersion comprises abrasives in a concentration of not more than 1.5% by mass, wherein the abrasives comprise ceria and have an average dispersed particle diameter of not less than 1.0 μm. A chemical mechanical polishing method comprises polishing an insulating film by the use of the chemical mechanical polishing aqueous dispersion. By the use of the chemical mechanical polishing aqueous dispersion, occurrence of polishing scratches can be suppressed without lowering a removal rate.
摘要翻译： 化学机械研磨用水分散体包含浓度为1.5质量％以下的研磨剂，其中研磨剂包含二氧化铈，平均分散粒径不小于1.0μm。 化学机械抛光方法包括通过使用化学机械抛光水分散体抛光绝缘膜。 通过使用化学机械研磨水分散体，可以抑制抛光划痕的发生，而不降低去除率。
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6.发明申请CHEMICAL MECHANICAL POLISHING AGENT KIT AND CHEMICAL MECHANICAL POLISHING METHOD USING THE SAME 审中-公开化学机械抛光剂套件及其化学机械抛光方法公开(公告)号：US20080274620A1
公开(公告)日：2008-11-06
申请号：US12164320
申请日：2008-06-30
IPC分类号： H01L21/302
CPC分类号： C09G1/02 , H01L21/3212
摘要： A chemical mechanical polishing method of the present invention comprises conducting polishing by the use of a chemical mechanical polishing aqueous dispersion (A) containing abrasive grains and then conducting polishing by the use of a chemical mechanical polishing aqueous composition (B) containing at least one organic compound having a heterocyclic ring in addition to the chemical mechanical polishing aqueous dispersion (A). Also A chemical mechanical polishing agent kit of the present invention comprises the chemical mechanical polishing aqueous dispersion (A) and the chemical mechanical polishing aqueous composition (B). The polishing method and the polishing agent kit can prevent an increase of dishing and corrosion of wiring portion to enhance the yield.
摘要翻译： 本发明的化学机械抛光方法包括通过使用含有磨粒的化学机械抛光水分散体（A）进行抛光，然后通过使用含有至少一种有机物的化学机械抛光含水组合物（B）进行抛光 除了化学机械研磨水分散体（A）之外还具有杂环的化合物。 本发明的化学机械研磨剂试剂盒也包括化学机械研磨用水分散体（A）和化学机械研磨用水性组合物（B）。 抛光方法和抛光剂套件可以防止布线部分的凹陷和腐蚀增加以提高产量。
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7.发明授权Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method 有权化学机械抛光水性分散体和化学机械抛光方法公开(公告)号：US07252782B2
公开(公告)日：2007-08-07
申请号：US11038190
申请日：2005-01-21
IPC分类号： C09K13/06
CPC分类号： C09G1/02 , C09K3/1463 , H01L21/31053
摘要： A chemical mechanical polishing aqueous dispersion comprises abrasives (A) containing ceria, an anionic water-soluble polymer (B) and a cationic surfactant (C), wherein the amount of the anionic water-soluble polymer (B) is in the range of 60 to 600 parts by mass based on 100 parts by mass of the abrasives (A) containing ceria, and the amount of the cationic surfactant (C) is in the range of 0.1 to 100 ppm based on the whole amount of the chemical mechanical polishing aqueous dispersion.
摘要翻译： 化学机械抛光水分散体包含含有二氧化铈的研磨剂（A），阴离子水溶性聚合物（B）和阳离子表面活性剂（C），其中阴离子水溶性聚合物（B）的量在60 相对于100质量份含有二氧化铈的研磨剂（A）为600质量份，阳离子性表面活性剂（C）的含量相对于化学机械研磨用水的总量为0.1〜100ppm 分散。
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8.发明申请Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method 有权化学机械抛光水性分散体和化学机械抛光方法公开(公告)号：US20050227451A1
公开(公告)日：2005-10-13
申请号：US11102639
申请日：2005-04-11
CPC分类号： C09G1/02 , C09K3/1463 , H01L21/31053 , H01L21/3212 , H01L21/76819
摘要： Disclosed is a chemical mechanical polishing aqueous dispersion comprising (A1) first fumed silica having a specific surface area of not less than 10 m2/g and less than 160 m2/g and an average secondary particle diameter of not less than 170 nm and not more than 250 nm and (A2) second fumed silica having a specific surface area of not less than 160 m2/g and an average secondary particle diameter of not less than 50 nm and less than 170 nm. Also disclosed is a chemical mechanical polishing method using the chemical mechanical polishing aqueous dispersion. According to the chemical mechanical polishing aqueous dispersion and the chemical mechanical polishing method, a chemical mechanical polishing process wherein a barrier metal layer and a cap layer can be efficiently removed by polishing and damage to an insulating film material of a low dielectric constant present in the underlying layer is reduced can be carried out.
摘要翻译： 公开了一种化学机械抛光水分散体，其包含（A1）比表面积不小于10m 2 / g且小于160m 2 / g的第一热解法二氧化硅， g，平均二次粒径为170nm以上250nm以下，（A2）比表面积为160m 2 / g以上的第二热解法二氧化硅，平均 二次粒径不小于50nm且小于170nm。 还公开了使用化学机械研磨水分散体的化学机械研磨方法。 根据化学机械抛光水分散体和化学机械抛光方法，化学机械抛光方法可以通过抛光和损坏存在于介质中的低介电常数的绝缘薄膜材料来有效地去除阻挡金属层和盖层 底层减少可以进行。
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9.发明授权Slurry for chemical mechanical polishing and method of manufacturing semiconductor device 有权用于化学机械抛光的浆料和半导体器件的制造方法公开(公告)号：US06924227B2
公开(公告)日：2005-08-02
申请号：US09932943
申请日：2001-08-21
申请人： Gaku Minamihaba , Hiroyuki Yano , Nobuyuki Kurashima , Nobuo Kawahashi , Masayuki Hattori , Kazuo Nishimoto
发明人： Gaku Minamihaba , Hiroyuki Yano , Nobuyuki Kurashima , Nobuo Kawahashi , Masayuki Hattori , Kazuo Nishimoto
IPC分类号： H01L21/304 , C09G1/02 , C09K3/14 , H01L21/4763
CPC分类号： C09G1/02 , C09K3/1463
摘要： A method of manufacturing a semiconductor device uses a slurry for chemical polishing during the manufacturing process, the slurry containing polishing particles comprising colloidal particles whose primary particles have a diameter ranging from 5 to 30 nm, wherein the degree of association of the primary particles is 5 or less. This slurry for chemical mechanical polishing makes it possible to minimize erosion and scratching whenever a conductive material film is subjected to CMP treatment.
摘要翻译： 制造半导体装置的方法在制造工序中使用用于化学抛光的浆料，所述浆料含有包含一次粒径为5〜30nm的胶体粒子的研磨粒子，其中，一次粒子的缔合度为5 或更少。 这种用于化学机械抛光的浆料使得每当对导电材料膜进行CMP处理时，可以最小化侵蚀和刮擦。
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公开(公告)号：US06653267B2
公开(公告)日：2003-11-25
申请号：US09893961
申请日：2001-06-29
IPC分类号： C11D328
CPC分类号： C09G1/02 , C09K3/1463 , C23F3/04 , H01L21/3212
摘要： The present invention provides an aqueous dispersion for chemical mechanical polishing suitable for polishing of copper, which has a high polishing speed and a low erosion rate with overpolishing. The aqueous dispersion for chemical mechanical polishing of the invention contains a compound having a heterocycle, a surfactant and an oxidizing agent, wherein the compound having a heterocycle and the surfactant are in a weight ratio of 1:10 to 1:0.03. The aqueous dispersion may also contain abrasive particle. The compound having a heterocycle is preferably quinaldic acid, benzotriazole or the like. The surfactant is preferably a sulfonic acid salt such as potassium dodecylbenzenesulfonate or ammonium dodecylbenzenesulfonate, and the oxidizing agent is preferably ammonium persulfate, hydrogen peroxide or the like. The abrasive particle used may be inorganic particle such as colloidal silica, an organic particle such as polymer particle, or an organic/inorganic composite particle comprising a combination thereof.
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