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    Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method
    1.
    发明授权
    Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method 有权
    化学机械抛光水性分散体和化学机械抛光方法

    公开(公告)号：US07550020B2

    公开(公告)日：2009-06-23

    申请号：US11180619

    申请日：2005-07-14

    申请人： Norihiko Ikeda ,  Kazuo Nishimoto ,  Masayuki Hattori ,  Nobuo Kawahashi

    发明人： Norihiko Ikeda ,  Kazuo Nishimoto ,  Masayuki Hattori ,  Nobuo Kawahashi

    IPC分类号： C09G1/02 ,  C09G1/04

    CPC分类号： H01L21/31053 ,  C09G1/02

    摘要： A chemical mechanical polishing aqueous dispersion comprises abrasives in a concentration of not more than 1.5% by mass, wherein the abrasives comprise ceria and have an average dispersed particle diameter of not less than 1.0 μm. A chemical mechanical polishing method comprises polishing an insulating film by the use of the chemical mechanical polishing aqueous dispersion. By the use of the chemical mechanical polishing aqueous dispersion, occurrence of polishing scratches can be suppressed without lowering a removal rate.

    摘要翻译： 化学机械研磨用水分散体包含浓度为1.5质量％以下的研磨剂，其中研磨剂包含二氧化铈，平均分散粒径不小于1.0μm。 化学机械抛光方法包括通过使用化学机械抛光水分散体抛光绝缘膜。 通过使用化学机械研磨水分散体，可以抑制抛光划痕的发生，而不降低去除率。

    Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method
    2.
    发明授权
    Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method 有权
    化学机械抛光水性分散体和化学机械抛光方法

    公开(公告)号：US07252782B2

    公开(公告)日：2007-08-07

    申请号：US11038190

    申请日：2005-01-21

    申请人： Norihiko Ikeda ,  Kazuo Nishimoto ,  Masayuki Hattori ,  Nobuo Kawahashi

    发明人： Norihiko Ikeda ,  Kazuo Nishimoto ,  Masayuki Hattori ,  Nobuo Kawahashi

    IPC分类号： C09K13/06

    CPC分类号： C09G1/02 ,  C09K3/1463 ,  H01L21/31053

    摘要： A chemical mechanical polishing aqueous dispersion comprises abrasives (A) containing ceria, an anionic water-soluble polymer (B) and a cationic surfactant (C), wherein the amount of the anionic water-soluble polymer (B) is in the range of 60 to 600 parts by mass based on 100 parts by mass of the abrasives (A) containing ceria, and the amount of the cationic surfactant (C) is in the range of 0.1 to 100 ppm based on the whole amount of the chemical mechanical polishing aqueous dispersion.

    摘要翻译： 化学机械抛光水分散体包含含有二氧化铈的研磨剂（A），阴离子水溶性聚合物（B）和阳离子表面活性剂（C），其中阴离子水溶性聚合物（B）的量在60 相对于100质量份含有二氧化铈的研磨剂（A）为600质量份，阳离子性表面活性剂（C）的含量相对于化学机械研磨用水的总量为0.1〜100ppm 分散。

    Aqueous dispersion for chemical mechanical polishing
    5.
    发明授权
    Aqueous dispersion for chemical mechanical polishing 有权
    化学机械抛光用水分散体

    公开(公告)号：US06786944B2

    公开(公告)日：2004-09-07

    申请号：US10412385

    申请日：2003-04-14

    申请人： Masayuki Hattori ,  Michiaki Ando ,  Kazuo Nishimoto ,  Nobuo Kawahashi

    发明人： Masayuki Hattori ,  Michiaki Ando ,  Kazuo Nishimoto ,  Nobuo Kawahashi

    IPC分类号： C09G102

    CPC分类号： C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/31053

    摘要： An aqueous dispersion for chemical mechanical polishing that is hard to putrefy, scarcely causes scratches, causes only small dishing and is suitable for used in a micro isolating step or a planarizing step of an inter layer dielectric in production of semiconductor devices, which dispersion comprises ceria particles, a preservative composed of a compound having a heterocyclic structure containing a nitrogen atom and a sulfur atom in the ring, such as an isothiazolone compound, and an organic component such as organic abrasive grains composed of resin particles, a dispersing agent composed of a water-soluble polymer having a specific molecular weight or the like, a surfactant and/or an organic acid or a salt thereof contained in an aqueous medium, wherein the ceria particles, preservative and organic component are contained in proportions of 0.1 to 20% by mass, 0.001 to 0.2% by mass and 0.1 to 30% by mass, respectively, when the total proportion of the aqueous medium, ceria particles, preservative and organic component is 100% by mass, and wherein the pH of this aqueous dispersion can be kept in a neutral range.

    摘要翻译： 用于化学机械抛光的水性分散体难以腐蚀，几乎不引起划痕，仅导致小的凹陷，并且适合用于半导体器件生产中的微层间电介质的微隔离步骤或平面化步骤，该分散体包括二氧化铈 颗粒，由具有在环中含有氮原子和硫原子的杂环结构的化合物组成的防腐剂，例如异噻唑酮化合物，以及有机成分，例如由树脂颗粒组成的分散剂，由 包含在水性介质中的具有特定分子量的水溶性聚合物，表面活性剂和/或有机酸或其盐，其中二氧化铈颗粒，防腐剂和有机组分的含量为0.1〜20％ 质量，0.001〜0.2质量％和0.1〜30质量％，当水性介质，二氧化铈颗粒， 防腐剂和有机成分为100质量％，并且其中该水分散体的pH可以保持在中性范围。

    Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing process, production process of semiconductor device and material for preparing an aqueous dispersion for chemical mechanical polishing
    9.
    发明授权
    Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing process, production process of semiconductor device and material for preparing an aqueous dispersion for chemical mechanical polishing 有权
    用于化学机械抛光的水分散体，化学机械抛光工艺，半导体器件的生产过程以及用于制备用于化学机械抛光的水分散体的材料

    公开(公告)号：US07005382B2

    公开(公告)日：2006-02-28

    申请号：US10694890

    申请日：2003-10-29

    申请人： Kazuo Nishimoto ,  Tatsuaki Sakano ,  Akihiro Takemura ,  Masayuki Hattori ,  Nobuo Kawahashi ,  Naoto Miyashita ,  Atsushi Shigeta ,  Yoshitaka Matsui ,  Kazuhiko Ida

    发明人： Kazuo Nishimoto ,  Tatsuaki Sakano ,  Akihiro Takemura ,  Masayuki Hattori ,  Nobuo Kawahashi ,  Naoto Miyashita ,  Atsushi Shigeta ,  Yoshitaka Matsui ,  Kazuhiko Ida

    IPC分类号： B24B1/00

    CPC分类号： H01L21/3212 ,  C09G1/02 ,  H01L21/02024

    摘要： Provided are an aqueous dispersion for chemical mechanical polishing, which planarizes a surface to be polished and has high shelf stability, a chemical mechanical polishing process excellent in selectivity when surfaces of different materials are polished, and a production process of a semiconductor device. A first aqueous dispersion contains a water-soluble quaternary ammonium salt, an inorganic acid salt, abrasive grains and an aqueous medium. A second aqueous dispersion contains at least a water-soluble quaternary ammonium salt, another basic organic compound other than the water-soluble quaternary ammonium salt, an inorganic acid salt, a water-soluble polymer, abrasive grains and an aqueous medium. The second aqueous dispersion is composed of a first aqueous dispersion material (I) obtained by mixing a water-soluble quaternary ammonium salt and an inorganic acid salt into an aqueous medium, and a second aqueous dispersion material (II) obtained by mixing a water-soluble polymer and another basic organic compound other than the water-soluble quaternary ammonium salt into an aqueous medium. Abrasive grains are contained in at least one of the aqueous dispersion materials.

    摘要翻译： 提供了用于化学机械抛光的水分散体，其平坦化待抛光的表面并具有高的储存稳定性，当抛光不同材料的表面时选择性优异的化学机械抛光工艺以及半导体器件的生产工艺。 第一种水性分散体含有水溶性季铵盐，无机酸盐，磨粒和水性介质。 第二水性分散体至少包含水溶性季铵盐，除水溶性季铵盐以外的其它碱性有机化合物，无机酸盐，水溶性聚合物，磨料颗粒和水性介质。 第二水性分散体由通过将水溶性季铵盐和无机酸盐混合到水性介质中而得到的第一水分散体（I）和第二水分散体（II） 水溶性聚合物和除了水溶性季铵盐之外的另一种碱性有机化合物转化成水性介质。 磨粒在至少一种水分散体中含有。