利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

26 条记录 (耗时 0.02 秒)

    Piezoelectric oscillator
    1.
    发明授权
    Piezoelectric oscillator 失效
    压电振荡器

    公开(公告)号：US06734747B1

    公开(公告)日：2004-05-11

    申请号：US09679984

    申请日：2000-10-05

    申请人： Masayuki Ishikawa ,  Hideaki Kohzu ,  Yukio Naito

    发明人： Masayuki Ishikawa ,  Hideaki Kohzu ,  Yukio Naito

    IPC分类号： H03B532

    CPC分类号： H03B5/366 ,  H03B5/30

    摘要： A piezoelectric oscillator is disclosed which falls under the category of an oscillator including a piezoelectric resonator, an amplifier, and a variable-capacitance element. The variable-capacitance element is a MOS construction type capacitance element, one terminal of that is fixed at a V voltage, and the other terminal of that is applied with a control voltage falling within a range whose intermediate value is the V voltage. As a result of this, a piezoelectric oscillator is realized which can vary its frequency over a wide range even without use of a minus power supply.

    摘要翻译： 公开了一种压电振荡器，其属于包括压电谐振器，放大器和可变电容元件的振荡器类别。 可变电容元件是MOS构造型电容元件，其一端被固定在V电压，另一端被施加在中间值为V电压的范围内的控制电压。 结果，实现了即使不使用负电源也可以在宽范围内改变其频率的压电振荡器。

    Automatic flaw detection device
    3.
    发明授权
    Automatic flaw detection device 失效
    自动探伤装置

    公开(公告)号：US4562738A

    公开(公告)日：1986-01-07

    申请号：US596700

    申请日：1984-04-04

    申请人： Kazuo Nakayama ,  Yukio Naito ,  Eiji Munesue

    发明人： Kazuo Nakayama ,  Yukio Naito ,  Eiji Munesue

    IPC分类号： G01N29/26 ,  G01N29/04

    CPC分类号： G01N29/26

    摘要： An automatic flaw detection apparatus comprises a supporting frame; a rotational frame supported inside the supporting frame in a freely rotatable manner by means of bearings; a hollow shaft which is supported by and inside the rotational frame, through the interior of which passes a material to be inspected; a holder which is disposed within the hollow shaft extending in the longitudinal direction of the axis of the hollow shaft and rotates in association with the hollow shaft, the a sensor incorporated in the holder to detect any defect in the material to be probed; and a signal transmission device which is placed between the hollow shaft and the rotational frame and comprises a stator section supported by the supporting frame and a rotor section supported by the hollow shaft or the rotational frame to be electrically in association with the stator section, and which transmits flaw detection signal from the sensor to the outside.

    摘要翻译： 一种自动探伤装置，包括支撑框架; 旋转框架，其通过轴承以可自由旋转的方式支撑在所述支撑框架内; 一个空心轴，由旋转框架支撑并在旋转框架的内部，通过其内部通过待检查的材料; 所述保持器设置在所述中空轴内，所述保持器沿所述中空轴的轴线的长度方向延伸，并且与所述中空轴相关联地旋转，所述传感器并入所述保持器中，以检测待探测材料中的任何缺陷; 以及信号传输装置，其设置在所述中空轴与所述旋转框架之间，并且包括由所述支撑框架支撑的定子部分和由所述中空轴或所述旋转框架支撑的与所述定子部分电连接的转子部分，以及 其将探测信号从传感器传送到外部。

    Plasma processing method and plasma etching method
    6.
    发明授权
    Plasma processing method and plasma etching method 失效
    等离子体处理方法和等离子体蚀刻方法

    公开(公告)号：US5716534A

    公开(公告)日：1998-02-10

    申请号：US564621

    申请日：1995-11-29

    申请人： Hiroshi Tsuchiya ,  Yoshio Fukasawa ,  Shuji Mochizuki ,  Yukio Naito ,  Kosuke Imafuku

    发明人： Hiroshi Tsuchiya ,  Yoshio Fukasawa ,  Shuji Mochizuki ,  Yukio Naito ,  Kosuke Imafuku

    IPC分类号： H01J37/32 ,  H01L21/00

    CPC分类号： H01J37/32082 ,  H01J37/32165 ,  H01J37/3299 ,  H01J2237/3343

    摘要： A plasma etching apparatus includes a process chamber that can be set at a reduced pressure. A lower electrode on which a semiconductor wafer is placed and an upper electrode opposing the lower electrode are disposed in the process chamber. The lower and upper electrodes are connected to RF power supplies, respectively. First and second RF powers, the phases and power ratio of which are separately controlled, can be applied to the upper and lower electrodes. Parameters including the frequencies, power values, and relative phases of the first and second RF powers are selected in order to set the etching characteristics, e.g., an etching rate, the planar uniformity of the etching rate, the etching selectivity ratio and the like to predetermined values. During etching, the first and second RF powers are monitored by separate detectors, and are maintained at initial preset values through a controller.

    摘要翻译： 等离子体蚀刻装置包括能够减压设置的处理室。 在其中放置半导体晶片的下电极和与下电极相对的上电极设置在处理室中。 下电极和上电极分别连接到RF电源。 第一和第二RF功率（其相位和功率比被单独控制）可以应用于上电极和下电极。 选择包括第一和第二RF功率的频率，功率值和相对相位的参数，以便将蚀刻特性，例如蚀刻速率，蚀刻速率的平面均匀性，蚀刻选择比等设置为 预定值。 在蚀刻期间，第一和第二RF功率由分离的检测器监测，并通过控制器保持在初始预设值。