公开(公告)号：US20180127272A1

公开(公告)日：2018-05-10

申请号：US15806938

申请日：2017-11-08

Applicant: Matheson Tri-Gas, Inc.

Inventor： Hideharu Shimizu ,  Mark Raynor ,  Daniel Tempel ,  Robin Gardiner ,  Daniel Alvarez, JR.

IPC: C01B21/16 ,  B01J20/04 ,  B01J20/26 ,  B01J20/10 ,  B01J20/08 ,  B01J20/28 ,  B01J20/282 ,  B01J20/283 ,  B01J20/284 ,  B01J20/285 ,  B01D53/26 ,  B01D53/28

CPC classification number: C01B21/16 ,  B01D53/261 ,  B01D53/263 ,  B01D53/28 ,  B01D2251/30 ,  B01D2251/302 ,  B01D2251/304 ,  B01D2251/306 ,  B01D2251/402 ,  B01D2251/404 ,  B01D2251/406 ,  B01D2251/408 ,  B01D2252/30 ,  B01D2253/104 ,  B01D2253/106 ,  B01D2253/1085 ,  B01D2253/112 ,  B01D2253/1122 ,  B01D2253/1124 ,  B01D2253/306 ,  B01D2253/311 ,  B01D2256/00 ,  B01J20/04 ,  B01J20/041 ,  B01J20/08 ,  B01J20/103 ,  B01J20/26 ,  B01J20/28061 ,  B01J20/28064 ,  B01J20/28071 ,  B01J20/28073 ,  B01J20/28076 ,  B01J20/282 ,  B01J20/283 ,  B01J20/284 ,  B01J20/285 ,  B01J2220/52 ,  C01P2006/82

Abstract: The present invention generally relates to the field of gas and liquid phase desiccation. In particular, the present invention relates to methods for removing moisture (and hence oxygen precursors) from hydrazine, thereby providing a high purity source gas suitable for use in vapor deposition processes, such as but not limited to, chemical vapor deposition (CVD) or an atomic layer deposition (ALD).

公开(公告)号：US11027974B2

公开(公告)日：2021-06-08

申请号：US15806938

申请日：2017-11-08

Applicant: Matheson Tri-Gas, Inc.

Inventor： Hideharu Shimizu ,  Mark Raynor ,  Daniel Tempel ,  Robin Gardiner ,  Daniel Alvarez, Jr.

IPC: B01D53/26 ,  C01B21/16 ,  B01D53/28 ,  B01J20/04 ,  B01J20/08 ,  B01J20/10 ,  B01J20/26 ,  B01J20/28 ,  B01J20/282 ,  B01J20/283 ,  B01J20/284 ,  B01J20/285

Abstract: The present invention generally relates to the field of gas and liquid phase desiccation. In particular, the present invention relates to methods for removing moisture (and hence oxygen precursors) from hydrazine, thereby providing a high purity source gas suitable for use in vapor deposition processes, such as but not limited to, chemical vapor deposition (CVD) or an atomic layer deposition (ALD).

公开(公告)号：US20170182558A1

公开(公告)日：2017-06-29

申请号：US15389629

申请日：2016-12-23

Applicant: Matheson Tri-Gas, Inc.

Inventor： Hideharu Shimizu ,  Mark W. Raynor ,  Daniel Tempel ,  Junpin Yao ,  Larry Wagg ,  Robert Torres, JR.

IPC: B22F3/105 ,  B33Y50/02 ,  B33Y30/00 ,  B33Y80/00 ,  B22F3/10 ,  B23K15/00 ,  B23K26/342 ,  B23K26/60 ,  C23C8/24 ,  C23C8/20 ,  C23C8/10 ,  C23C8/28 ,  C23C8/36 ,  C23C10/08 ,  C23C12/02 ,  B33Y10/00

CPC classification number: B22F3/1055 ,  B22F2003/1056 ,  B22F2999/00 ,  B23K10/027 ,  B23K15/0086 ,  B23K15/0093 ,  B23K15/10 ,  B23K26/126 ,  B23K26/127 ,  B23K26/342 ,  B23K26/38 ,  B23K26/60 ,  B29C64/10 ,  B29C64/314 ,  B33Y10/00 ,  B33Y30/00 ,  C23C24/103 ,  Y02P10/295 ,  B22F3/101 ,  B22F2201/013 ,  B22F2201/02 ,  B22F2201/03 ,  B22F2201/04 ,  B22F2201/10 ,  B22F2201/30 ,  B22F2201/32

Abstract: The present invention generally relates to methods and apparatuses adapted to perform additive manufacturing (AM) processes and the resulting products made therefrom, and specifically, to AM processes that employ an energy beam to selectively fuse a base material to produce an object. More particularly, the invention relates to methods and systems that use reactive fluids to actively manipulate the surface chemistry of the base material prior to, during and/or after the AM process.