公开(公告)号：US08106380B2

公开(公告)日：2012-01-31

申请号：US12982101

申请日：2010-12-30

申请人： Matthew T. Currie ,  Anthony J. Lochtefeld ,  Richard Hammond ,  Eugene Fitzgerald

发明人： Matthew T. Currie ,  Anthony J. Lochtefeld ,  Richard Hammond ,  Eugene Fitzgerald

IPC分类号： H01L21/00

CPC分类号： H01L29/1054 ,  H01L29/105 ,  H01L29/161 ,  H01L29/36 ,  H01L29/66477 ,  H01L29/66545 ,  H01L29/66651 ,  H01L29/78 ,  H01L29/7842 ,  Y10S438/926

摘要： Semiconductor structures and devices including strained material layers having impurity-free zones, and methods for fabricating same. Certain regions of the strained material layers are kept free of impurities that can interdiffuse from adjacent portions of the semiconductor. When impurities are present in certain regions of the strained material layers, there is degradation in device performance. By employing semiconductor structures and devices (e.g., field effect transistors or “FETs”) that have the features described, or are fabricated in accordance with the steps described, device operation is enhanced.

摘要翻译： 包括具有无杂质区域的应变材料层的半导体结构和器件及其制造方法。 应变材料层的某些区域保持没有可以从半导体的相邻部分相互扩散的杂质。 当杂质存在于应变材料层的某些区域中时，器件性能下降。 通过采用具有所描述的或者根据所描述的步骤制造的特征的半导体结构和器件（例如，场效应晶体管或“FET”），器件操作被增强。

公开(公告)号：US08187379B2

公开(公告)日：2012-05-29

申请号：US13074777

申请日：2011-03-29

申请人： Eugene Fitzgerald ,  Richard Westhoff ,  Matthew T. Currie ,  Christopher J. Vineis ,  Thomas A. Langdo

发明人： Eugene Fitzgerald ,  Richard Westhoff ,  Matthew T. Currie ,  Christopher J. Vineis ,  Thomas A. Langdo

IPC分类号： C30B21/02

CPC分类号： C30B29/52 ,  C23C16/029 ,  C23C16/22 ,  C23C16/4401 ,  C30B25/02 ,  H01L21/0245 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/0262

摘要： A method for minimizing particle generation during deposition of a graded Si1-xGex layer on a semiconductor material includes providing a substrate in an atmosphere including a Si precursor and a Ge precursor, wherein the Ge precursor has a decomposition temperature greater than germane, and depositing the graded Si1-xGex layer having a final Ge content of greater than about 0.15 and a particle density of less than about 0.3 particles/cm2 on the substrate.

摘要翻译： 在半导体材料上沉积梯度Si1-xGex层期间最小化颗粒产生的方法包括在包括Si前体和Ge前体的气氛中提供衬底，其中Ge前体的分解温度大于锗烷，并沉积 分级的Si1-xGex层，其具有大于约0.15的最终Ge含量和小于约0.3颗粒/ cm 2的颗粒密度。

公开(公告)号：US07955435B2

公开(公告)日：2011-06-07

申请号：US12711560

申请日：2010-02-24

申请人： Eugene Fitzgerald ,  Richard Westhoff ,  Matthew T. Currie ,  Christopher J. Vineis ,  Thomas A. Langdo

发明人： Eugene Fitzgerald ,  Richard Westhoff ,  Matthew T. Currie ,  Christopher J. Vineis ,  Thomas A. Langdo

IPC分类号： C30B21/04

CPC分类号： C30B29/52 ,  C23C16/029 ,  C23C16/22 ,  C23C16/4401 ,  C30B25/02 ,  H01L21/0245 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/0262

摘要： A method for minimizing particle generation during deposition of a graded Si.sub.1-xGe.sub.x layer on a semiconductor material includes providing a substrate in an atmosphere including a Si precursor and a Ge precursor, wherein the Ge precursor has a decomposition temperature greater than germane, and depositing the graded Si.sub.1-xGe.sub.x layer having a final Ge content of greater than about 0.15 and a particle density of less than about 0.3 particles/cm.sup.2 on the substrate.

摘要翻译： 在半导体材料上沉积梯度Si 1-x Ge x层的过程中使颗粒产生最小化的方法包括在包括Si前体和Ge前体的气氛中提供衬底，其中Ge前体具有分解 温度大于锗烷，并沉积具有大于约0.15的最终Ge含量并且小于约0.3颗粒/ cm 2的颗粒密度的梯度Si 1-x Ge 2层在衬底上 。

公开(公告)号：US07884353B2

公开(公告)日：2011-02-08

申请号：US10972578

申请日：2004-10-25

申请人： Matthew Currie ,  Anthony Lochtefeld ,  Richard Hammond ,  Eugene Fitzgerald

发明人： Matthew Currie ,  Anthony Lochtefeld ,  Richard Hammond ,  Eugene Fitzgerald

IPC分类号： H01L29/06

CPC分类号： H01L29/1054 ,  H01L29/105 ,  H01L29/161 ,  H01L29/36 ,  H01L29/66477 ,  H01L29/66545 ,  H01L29/66651 ,  H01L29/78 ,  H01L29/7842 ,  Y10S438/926

摘要： Semiconductor structures and devices including strained material layers having impurity-free zones, and methods for fabricating same. Certain regions of the strained material layers are kept free of impurities that can interdiffuse from adjacent portions of the semiconductor. When impurities are present in certain regions of the strained material layers, there is degradation in device performance. By employing semiconductor structures and devices (e.g., field effect transistors or “FETs”) that have the features described, or are fabricated in accordance with the steps described, device operation is enhanced.

摘要翻译： 包括具有无杂质区域的应变材料层的半导体结构和器件及其制造方法。 应变材料层的某些区域保持没有可以从半导体的相邻部分相互扩散的杂质。 当杂质存在于应变材料层的某些区域中时，器件性能下降。 通过采用具有所描述或者根据所描述的步骤制造的特征的半导体结构和器件（例如，场效应晶体管或“FET”），器件操作被增强。

公开(公告)号：US20060197124A1

公开(公告)日：2006-09-07

申请号：US11415706

申请日：2006-05-01

申请人： Anthony Lochtefeld ,  Thomas Langdo ,  Richard Hammond ,  Matthew Currie ,  Glyn Braithwaite ,  Eugene Fitzgerald

发明人： Anthony Lochtefeld ,  Thomas Langdo ,  Richard Hammond ,  Matthew Currie ,  Glyn Braithwaite ,  Eugene Fitzgerald

IPC分类号： H01L21/8234 ,  H01L29/76 ,  H01L31/00

CPC分类号： H01L29/785 ,  H01L21/76254 ,  H01L21/76259 ,  H01L21/76264 ,  H01L21/76275 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/66772 ,  H01L29/66795 ,  H01L29/66916 ,  H01L29/7842 ,  H01L29/78603 ,  H01L29/78684 ,  H01L29/78687

摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

摘要翻译： 应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。

公开(公告)号：US20050280103A1

公开(公告)日：2005-12-22

申请号：US11211933

申请日：2005-08-25

申请人： Thomas Langdo ,  Matthew Currie ,  Glyn Braithwaite ,  Richard Hammond ,  Anthony Lochtefeld ,  Eugene Fitzgerald

发明人： Thomas Langdo ,  Matthew Currie ,  Glyn Braithwaite ,  Richard Hammond ,  Anthony Lochtefeld ,  Eugene Fitzgerald

IPC分类号： H01L21/336 ,  H01L21/337 ,  H01L21/762 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L29/76

CPC分类号： H01L29/785 ,  H01L21/76254 ,  H01L21/76259 ,  H01L21/76264 ,  H01L21/76275 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/66772 ,  H01L29/66795 ,  H01L29/66916 ,  H01L29/7842 ,  H01L29/78603 ,  H01L29/78684 ,  H01L29/78687

摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

摘要翻译： 应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。

公开(公告)号：US20050199954A1

公开(公告)日：2005-09-15

申请号：US11128628

申请日：2005-05-13

申请人： Anthony Lochtefeld ,  Thomas Langdo ,  Richard Hammond ,  Matthew Currie ,  Eugene Fitzgerald

发明人： Anthony Lochtefeld ,  Thomas Langdo ,  Richard Hammond ,  Matthew Currie ,  Eugene Fitzgerald

IPC分类号： H01L21/20 ,  H01L21/331 ,  H01L21/336 ,  H01L21/337 ,  H01L21/762 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L27/01 ,  H01L21/425

CPC分类号： H01L29/7847 ,  H01L21/28518 ,  H01L21/76254 ,  H01L21/76256 ,  H01L21/76259 ,  H01L21/76264 ,  H01L21/76275 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/0649 ,  H01L29/1033 ,  H01L29/165 ,  H01L29/41783 ,  H01L29/66242 ,  H01L29/66628 ,  H01L29/66772 ,  H01L29/66787 ,  H01L29/66916 ,  H01L29/7842 ,  H01L29/7843 ,  H01L29/7849 ,  H01L29/785 ,  H01L29/78603 ,  H01L29/78684 ,  H01L29/78687

摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

摘要翻译： 应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。

公开(公告)号：US20070293009A1

公开(公告)日：2007-12-20

申请号：US11848642

申请日：2007-08-31

申请人： Matthew Currie ,  Anthony Lochtefeld ,  Richard Hammond ,  Eugene Fitzgerald

发明人： Matthew Currie ,  Anthony Lochtefeld ,  Richard Hammond ,  Eugene Fitzgerald

IPC分类号： H01L21/336

CPC分类号： H01L29/1054 ,  H01L29/105 ,  H01L29/161 ,  H01L29/36 ,  H01L29/66477 ,  H01L29/66545 ,  H01L29/66651 ,  H01L29/78 ,  H01L29/7842 ,  Y10S438/926

摘要： Semiconductor structures and devices including strained material layers having impurity-free zones, and methods for fabricating same. Certain regions of the strained material layers are kept free of impurities that can interdiffuse from adjacent portions of the semiconductor. When impurities are present in certain regions of the strained material layers, there is degradation in device performance. By employing semiconductor structures and devices (e.g., field effect transistors or “FETs”) that have the features described, or are fabricated in accordance with the steps described, device operation is enhanced.

摘要翻译： 包括具有无杂质区域的应变材料层的半导体结构和器件及其制造方法。 应变材料层的某些区域保持没有可以从半导体的相邻部分相互扩散的杂质。 当杂质存在于应变材料层的某些区域中时，器件性能下降。 通过采用具有所描述或者根据所描述的步骤制造的特征的半导体结构和器件（例如，场效应晶体管或“FET”），器件操作被增强。

公开(公告)号：US20060197125A1

公开(公告)日：2006-09-07

申请号：US11415784

申请日：2006-05-02

申请人： Thomas Langdo ,  Matthew Currie ,  Glyn Braithwaite ,  Richard Hammond ,  Anthony Lochtefeld ,  Eugene Fitzgerald

发明人： Thomas Langdo ,  Matthew Currie ,  Glyn Braithwaite ,  Richard Hammond ,  Anthony Lochtefeld ,  Eugene Fitzgerald

IPC分类号： H01L21/8234 ,  H01L29/76 ,  H01L31/00

CPC分类号： H01L29/785 ,  H01L21/76254 ,  H01L21/76259 ,  H01L21/76264 ,  H01L21/76275 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/66772 ,  H01L29/66795 ,  H01L29/66916 ,  H01L29/7842 ,  H01L29/78603 ,  H01L29/78684 ,  H01L29/78687

摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

摘要翻译： 应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。

公开(公告)号：US20050205934A1

公开(公告)日：2005-09-22

申请号：US11126550

申请日：2005-05-11

申请人： Anthony Lochtefeld ,  Thomas Langdo ,  Richard Hammond ,  Matthew Gurrie ,  Eugene Fitzgerald

发明人： Anthony Lochtefeld ,  Thomas Langdo ,  Richard Hammond ,  Matthew Gurrie ,  Eugene Fitzgerald

IPC分类号： H01L21/20 ,  H01L21/331 ,  H01L21/336 ,  H01L21/337 ,  H01L21/762 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L31/117

CPC分类号： H01L29/7847 ,  H01L21/28518 ,  H01L21/76254 ,  H01L21/76256 ,  H01L21/76259 ,  H01L21/76264 ,  H01L21/76275 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/0649 ,  H01L29/1033 ,  H01L29/165 ,  H01L29/41783 ,  H01L29/66242 ,  H01L29/66628 ,  H01L29/66772 ,  H01L29/66787 ,  H01L29/66916 ,  H01L29/7842 ,  H01L29/7843 ,  H01L29/7849 ,  H01L29/785 ,  H01L29/78603 ,  H01L29/78684 ,  H01L29/78687

摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

摘要翻译： 应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。