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    AQUEOUS POLYMER DISPERSION SUITABLE FOR APPLICATION AS TACKIFIER FOR ADHESIVES AND PREPARABLE BY EMULSION POLYMERIZATION BASED ON C1 TO C20 ALKYL (METH)ACRYLATES
    1.
    发明申请
    AQUEOUS POLYMER DISPERSION SUITABLE FOR APPLICATION AS TACKIFIER FOR ADHESIVES AND PREPARABLE BY EMULSION POLYMERIZATION BASED ON C1 TO C20 ALKYL (METH)ACRYLATES 有权
    适用于作为粘合剂加标剂的水性聚合物分散体，可通过基于C1〜C20烷基（甲基）丙烯酸酯的乳液聚合制备

    公开(公告)号：US20130202886A1

    公开(公告)日：2013-08-08

    申请号：US13758493

    申请日：2013-02-04

    申请人： Matthias GERST ,  Michael Gross

    发明人： Matthias GERST ,  Michael Gross

    IPC分类号： C09J133/12 ,  C09J7/02

    CPC分类号： C09J133/12 ,  C08L2201/54 ,  C09J7/385 ,  C09J133/02 ,  Y10T428/2891

    摘要： Described is an aqueous dispersion comprising at least one polymer dispersed in water and having a weight-average molecular weight of less than 50 000 and a glass transition temperature of −40° C. to 0° C., preparable by emulsion polymerization in the presence of at least one chain transfer agent of a monomer mixture comprising at least 40% by weight of C1 to C20 alkyl (meth)acrylates, 0% to 30% by weight of vinylaromatics, at least 0.1% by weight of acid monomers, and 0% to 50% by weight of further monomers. The dispersion can be used in particular as a tackifier for adhesives.

    摘要翻译： 描述了一种水分散体，其包含分散在水中的至少一种聚合物，其重均分子量小于50 000，玻璃化转变温度为-40℃至0℃，可在存在下通过乳液聚合制备 的至少一种链转移剂，所述单体混合物包含至少40重量％的（甲基）丙烯酸C 1至C 20烷基酯，0重量％至30重量％的乙烯基芳族化合物，至少0.1重量％的酸单体，和0 ％至50重量％的其它单体。 分散体可特别用作粘合剂的增粘剂。

    Planet carrier and clutch housing
    2.
    发明授权
    Planet carrier and clutch housing 有权
    行星架和离合器外壳

    公开(公告)号：US08961359B2

    公开(公告)日：2015-02-24

    申请号：US13569139

    申请日：2012-08-07

    申请人： Justin Floro ,  Thomas D. Koch ,  Michael Gross ,  Perry G. Cruce ,  Anthony R. Johnson ,  Clifford Garrison ,  Lawrence A. Rutledge

    发明人： Justin Floro ,  Thomas D. Koch ,  Michael Gross ,  Perry G. Cruce ,  Anthony R. Johnson ,  Clifford Garrison ,  Lawrence A. Rutledge

    IPC分类号： F16H57/08

    CPC分类号： F16D13/76 ,  F16H57/082

    摘要： A planet carrier and clutch housing for a transmission is provided. The planet carrier and clutch housing includes a first deck, a second deck, an annulus and a plurality of planet carrier posts. The first deck has an inner rim, an outer rim, planet shaft bores and control oil bores. The second deck has an inner rim, an outer rim, a piston recess disposed between the inner and outer rims, planet shaft bores and control oil bores fluidly coupled to the piston recess. The annulus extends from the second deck. The planet carrier posts connect the first deck to the second deck, and each post has a control oil bore fluidly coupling respective control oil bores in the first and second decks. The inner surface of each second deck planet shaft bore may include a groove to receive a planet shaft seal.

    摘要翻译： 提供了用于变速器的行星架和离合器壳体。 行星架和离合器壳体包括第一甲板，第二甲板，环形空间和多个行星架。 第一个甲板具有内缘，外缘，行星轴孔和控制油孔。 第二甲板具有内边缘，外缘，设置在内轮缘和外轮缘之间的活塞凹槽，行星轴孔和流体地联接到活塞凹部的控制油孔。 环从第二层延伸。 行星架支柱将第一甲板连接到第二甲板，并且每个支柱具有在第一和第二甲板中流体连接相应控制油孔的控制油孔。 每个第二甲板行星轴孔的内表面可以包括用于容纳行星轴密封件的凹槽。

    Mask-saving production of complementary lateral high-voltage transistors with a RESURF structure
    4.
    发明授权
    Mask-saving production of complementary lateral high-voltage transistors with a RESURF structure 有权
    使用RESURF结构掩盖了生产互补的横向高压晶体管

    公开(公告)号：US08207031B2

    公开(公告)日：2012-06-26

    申请号：US12593310

    申请日：2008-03-26

    申请人： Christoph Ellmers ,  Thomas Uhlig ,  Felix Fuernhammer ,  Michael Stoisiek ,  Michael Gross

    发明人： Christoph Ellmers ,  Thomas Uhlig ,  Felix Fuernhammer ,  Michael Stoisiek ,  Michael Gross

    IPC分类号： H01L21/8238

    CPC分类号： H01L21/823807 ,  H01L21/823814 ,  H01L27/0922

    摘要： Methods of forming, on a substrate, a first lateral high-voltage MOS transistor and a second lateral high-voltage MOS transistor complementary to said first one are disclosed. According to one embodiment, the method includes (1) providing a substrate of a first conductivity type including a first active region for said first lateral high-voltage MOS transistor and a second active region for said second lateral high-voltage MOS transistor and (2) forming at least one first doped region of the first conductivity type in the first active region and forming in the second active region a drain extension region of the second conductivity type extending from a substrate surface to an interior of the substrate, including a concurrent implantation of dopants through openings of one and the same mask into the first and second active regions. Forming of the at least one first doped region may be a sub step of a superior step of forming a double RESURF structure in the first lateral high-voltage MOS transistor, and forming the double RESURF structure may include forming doped RESURF regions as two first doped regions, one thereof above and one thereof below the drift region of the first lateral high-voltage MOS transistor, and as two further doped regions, one thereof above and one thereof below the drain extension regions of the second lateral high-voltage MOS transistor, wherein the first doped RESURF regions have an inverse conductivity type with respect to the drift region and the further doped regions have inverse conductivity type as compared to the drain extension region.

    摘要翻译： 公开了在基板上形成与所述第一横向高压MOS晶体管和第二横向高压MOS晶体管互补的方法。 根据一个实施例，该方法包括（1）提供第一导电类型的衬底，其包括用于所述第一横向高压MOS晶体管的第一有源区和用于所述第二横向高压MOS晶体管的第二有源区和（2 ）在所述第一有源区中形成所述第一导电类型的至少一个第一掺杂区域，并且在所述第二有源区域中形成从衬底表面延伸到所述衬底内部的所述第二导电类型的漏极延伸区域，所述漏极延伸区域包括同时植入 的掺杂剂通过同一掩模的开口进入第一和第二活性区域。 形成至少一个第一掺杂区域可以是在第一横向高压MOS晶体管中形成双重RESURF结构的优异步骤的子步骤，并且形成双重RESURF结构可以包括形成掺杂的RESURF区域作为两个第一掺杂 区域，其中一个位于第一横向高压MOS晶体管的漂移区以下，其中一个位于第二横向高压MOS晶体管的漏极延伸区之下，其中一个位于第二横向高压MOS晶体管的漏极延伸区之下， 其中所述第一掺杂RESURF区域相对于所述漂移区域具有反向导电类型，并且所述另外的掺杂区域与所述漏极延伸区域相比具有反向导电类型。

    OPERATING TEMPERATURE MEASUREMENT FOR AN MOS POWER COMPONENT, AND MOS COMPONENT FOR CARRYING OUT THE METHOD
    5.
    发明申请
    OPERATING TEMPERATURE MEASUREMENT FOR AN MOS POWER COMPONENT, AND MOS COMPONENT FOR CARRYING OUT THE METHOD 审中-公开
    MOS功率元件的运行温度测量和实现方法的MOS元件

    公开(公告)号：US20110182324A1

    公开(公告)日：2011-07-28

    申请号：US12993559

    申请日：2009-05-19

    申请人： Michael Stoisiek ,  Michael Gross

    发明人： Michael Stoisiek ,  Michael Gross

    IPC分类号： G01K7/26 ,  H01L23/58

    CPC分类号： G01K7/16 ,  G01K2217/00 ,  H01L29/42372 ,  H01L29/4238 ,  H01L29/7816 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The invention is intended to specify an electrical measuring method for an operating temperature and a modified component for carrying out the method which improves the monitoring of the component. Measured temperature values are intended to be delivered without any time delay and without requiring additional surfaces for temperature sensors. Location-related temperature values need to be able to be measured. The invention proposes a method for said location-related electrical measurement of the operating temperature of a likewise proposed MOS power component with a gate electrode network comprising a material whose temperature coefficient of the electrical resistance is known. The gate electrode network is divided into a plurality of measuring sections with contact point pairs which are respectively connected to contacts (71.1, 72.1; 71.2, 72.2; 71.3, 7; 72.3, 7). The contact points in each contact point pair are at a certain distance from one another, and each of the measuring sections situated between the contact point pairs is respectively electrically insulated from the other measuring sections, so that there is no electrical influencing between the measuring sections. The electrical resistances of the measuring sections are measured directly on the gate electrode network during the operation of the semiconductor power component when gate voltages are applied between the contact points of the gate electrode (4) using measuring voltages (u1, u2, u3) superimposed on the gate voltages. The electrical resistances of the measuring sections are used to determine the temperatures of the MOS semiconductor power component on the measuring sections.

    摘要翻译： 本发明旨在指定用于操作温度的电测量方法和用于实施改进对部件的监视的方法的改进部件。 测量的温度值意图在没有任何时间延迟的情况下传送，而不需要额外的温度传感器表面。 需要测量位置相关的温度值。 本发明提出了一种用于所述位置相关电测量同样提出的MOS功率部件的操作温度的方法，其中栅电极网络包括其电阻温度系数已知的材料。 栅极电极网络被分成多个测量部分，其具有分别连接到触点（71.1,72.1; 71.2,72.2; 71.3,7,72.3,7）的接触点对。 每个接触点对中的接触点彼此距离一定距离，并且位于接触点对之间的每个测量部分分别与其它测量部分电绝缘，使得在测量部分 。 在使用测量电压（u1，u2，u3）叠加的栅电极（4）的接触点之间施加栅极电压时，在半导体功率分量的运行期间，在栅电极网络上直接测量测量部分的电阻 对栅极电压。 测量部分的电阻用于确定测量部分上的MOS半导体功率部件的温度。

    AIR INTAKE SILENCER ASSEMBLY
    8.
    发明申请
    AIR INTAKE SILENCER ASSEMBLY 审中-公开
    空气净化器总成

    公开(公告)号：US20060272888A1

    公开(公告)日：2006-12-07

    申请号：US11422248

    申请日：2006-06-05

    申请人： Michael Lucas ,  Michael Gross

    发明人： Michael Lucas ,  Michael Gross

    IPC分类号： F01N1/00 ,  F01N1/10

    CPC分类号： F01N1/04 ,  F02M35/1211 ,  F02M35/1227 ,  F02M35/1272

    摘要： An air intake silencer assembly at the intake of an air handling system includes a plenum housing having an inlet end for receiving air and having an outlet port for discharging air. Two baffle panels in spaced relation in the housing define, with the housing, an inlet chamber, a central chamber, and a discharge chamber. A plurality of tubular members is supported by the baffle panels and each includes a perforated core and a sound dissipating fiber wrapping. Air flows into the inlet chamber, through the plurality of tubular members to the discharge chamber, and is discharged from the discharge chamber through the outlet port.

    摘要翻译： 在空气处理系统的入口处的进气消声器组件包括具有用于接收空气的入口端并具有用于排出空气的出口的增压室壳体。 在壳体中间隔开的两个挡板限定了壳体，入口室，中央室和排放室。 多个管状构件由挡板支撑，并且每个都包括穿孔芯和消声纤维缠绕。 空气流入入口室，通过多个管状构件流到排放室，并通过出口从排放室排出。