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公开(公告)号：US08022776B2
公开(公告)日：2011-09-20
申请号：US11997354
申请日：2006-08-02
CPC分类号： H03D7/1433 , H03B5/1215 , H03B5/1228 , H03B5/1296 , H03D7/1441 , H03D7/1458 , H03D2200/0025 , H03D2200/0043 , H03D2200/0088 , H03F1/22 , H03F3/19 , H03F2200/294 , H03F2200/537 , H03F2200/61
摘要： The present disclosure relates to coupled circuits and methods of coupling circuits having a power supply wherein a plurality of transistors are inductively coupled directly to the power supply for providing a single DC supply voltage directly to each of the plurality of transistors, and wherein a plurality of transformers have primary and secondary windings, the primary and secondary windings providing, at least in part, inductive loads for inductively coupling the plurality of transistors to the power supply, the plurality of transformers also providing an AC signal path for coupling neighboring ones of the plurality of transistors together.
摘要翻译： 本公开涉及具有电源的耦合电路的耦合电路和方法，其中多个晶体管直接感应耦合到电源，以将单个DC电源电压直接提供给多个晶体管中的每一个，并且其中多个 变压器具有初级和次级绕组，初级和次级绕组至少部分地提供用于将多个晶体管感应耦合到电源的感性负载，多个变压器还提供用于耦合多个晶体管中的相邻晶体管的AC信号路径 的晶体管在一起。
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公开(公告)号：US20080231383A1
公开(公告)日：2008-09-25
申请号：US11997354
申请日：2006-08-02
CPC分类号： H03D7/1433 , H03B5/1215 , H03B5/1228 , H03B5/1296 , H03D7/1441 , H03D7/1458 , H03D2200/0025 , H03D2200/0043 , H03D2200/0088 , H03F1/22 , H03F3/19 , H03F2200/294 , H03F2200/537 , H03F2200/61
摘要： The present disclosure relates to coupled circuits and methods of coupling circuits having a power supply wherein a plurality of transistors are inductively coupled directly to the power supply for providing a single DC supply voltage directly to each of the plurality of transistors, and wherein a plurality of transformers have primary and secondary windings, the primary and secondary windings providing, at least in part, inductive loads for inductively coupling the plurality of transistors to the power supply, the plurality of transformers also providing an AC signal path for coupling neighboring ones of the plurality of transistors together.
摘要翻译： 本公开涉及具有电源的耦合电路的耦合电路和方法，其中多个晶体管直接感应耦合到电源，以将单个DC电源电压直接提供给多个晶体管中的每一个，并且其中多个 变压器具有初级和次级绕组，初级和次级绕组至少部分地提供用于将多个晶体管感应耦合到电源的感性负载，多个变压器还提供用于耦合多个晶体管中的相邻晶体管的AC信号路径 的晶体管在一起。
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公开(公告)号：US20110210767A1
公开(公告)日：2011-09-01
申请号：US12979684
申请日：2010-12-28
IPC分类号： H03B19/06
摘要： Phase-coherent differential structures contain a phase-coherent transformer having two pairs of phase-coherent coupled differential inductors.
摘要翻译： 相位相干差分结构包含具有两对相位相干耦合差分电感器的相位相干变压器。
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公开(公告)号：US20110140798A1
公开(公告)日：2011-06-16
申请号：US12947450
申请日：2010-11-16
CPC分类号： H01L27/0808 , H01L23/5223 , H01L29/93 , H01L29/94 , H01L2924/0002 , H01L2924/3011 , H01P1/18 , H03B5/187 , H03L7/04 , H03L7/0812 , H01L2924/00
摘要： Tuning devices and methods are disclosed. One of the devices comprises a metal structure connected with artificial dielectric elements, and variable capacitance devices. Each variable capacitance device is connected with a respective artificial dielectric element and with a control signal. Control of the variation of the capacitance allows the desired tuning. Another device comprises metallic structures connected with artificial dielectric elements and switches connected between the artificial dielectric elements. Turning ON and OFF the switches allows the capacitance between artificial dielectric elements to be varied and a signal guided by the metallic structures to be tuned.
摘要翻译： 公开了调谐装置和方法。 其中一个装置包括与人造电介质元件连接的金属结构和可变电容器件。 每个可变电容器件与相应的人造电介质元件和控制信号连接。 控制电容的变化允许期望的调谐。 另一个装置包括与人工介电元件连接的金属结构和连接在人造介电元件之间的开关。 打开和关闭开关允许人造介质元件之间的电容变化，并且由金属结构引导的信号进行调谐。
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5.发明授权公开(公告)号：US08325001B2
公开(公告)日：2012-12-04
申请号：US11908603
申请日：2006-08-02
CPC分类号： H01F17/0013 , H01F41/041 , H01F2017/002 , H01F2021/125 , Y10T29/4902
摘要： Interleaved three-dimensional (3D) on-chip differential inductors 110, 120 and transformer 100 are disclosed. The interleaved 3D on-chip differential inductors 110, 120 and transformer 100 make the best use of multiple metal layers in mainstream standard processes, such as CMOS, BiCMOS and SiGe technologies.
摘要翻译： 公开了交错的三维（3D）片上差分电感器110,120和变压器100。 交错的3D片上差分电感器110,120和变压器100在诸如CMOS，BiCMOS和SiGe技术的主流标准工艺中最好地利用多个金属层。
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6.发明申请"Interleaved Three-Dimensional On-Chip Differential Inductors and Transformers 有权“Interleaved Three-Dimensional On-Chip Differential Inductors and Transformers”公开(公告)号：US20080272875A1
公开(公告)日：2008-11-06
申请号：US11908603
申请日：2006-08-02
CPC分类号： H01F17/0013 , H01F41/041 , H01F2017/002 , H01F2021/125 , Y10T29/4902
摘要： Interleaved three-dimensional (3D) on-chip differential inductors 110, 120 and transformer 100 are disclosed. The interleaved 3D on-chip differential inductors 110, 120 and transformer 100 make the best use of multiple metal layers in mainstream standard processes, such as CMOS, BiCMOS and SiGe technologies.
摘要翻译： 公开了交错的三维（3D）片上差分电感器110,120和变压器100。 交错的3D片上差分电感器110,120和变压器100在诸如CMOS，BiCMOS和SiGe技术的主流标准工艺中最好地利用多个金属层。
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公开(公告)号：US20080204170A1
公开(公告)日：2008-08-28
申请号：US11996578
申请日：2006-07-25
CPC分类号： H01L27/0808 , H01L23/5223 , H01L29/93 , H01L29/94 , H01L2924/0002 , H01L2924/3011 , H01P1/18 , H03B5/187 , H03L7/04 , H03L7/0812 , H01L2924/00
摘要： Tuning devices and methods are disclosed. One of the devices comprises a metal structure connected with artificial dielectric elements, and variable capacitance devices. Each variable capacitance device is connected with a respective artificial dielectric element and with a control signal. Control of the variation of the capacitance allows the desired tuning. Another device comprises metallic structures connected with artificial dielectric elements and switches connected between the artificial dielectric elements. Turning ON and OFF the switches allows the capacitance between artificial dielectric elements to be varied and a signal guided by the metallic structures to be tuned.
摘要翻译： 公开了调谐装置和方法。 其中一个装置包括与人造电介质元件连接的金属结构和可变电容器件。 每个可变电容器件与相应的人造电介质元件和控制信号连接。 控制电容的变化允许期望的调谐。 另一个装置包括与人工介电元件连接的金属结构和连接在人造介电元件之间的开关。 打开和关闭开关允许人造介质元件之间的电容变化，并且由金属结构引导的信号进行调谐。
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8.发明申请Resonant Types Of Common-Source/Common-Emitter Struture For High Gain Amplification 审中-公开用于高增益放大的共源/共发射极共振共振类型公开(公告)号：US20080197929A1
公开(公告)日：2008-08-21
申请号：US11996582
申请日：2006-07-31
IPC分类号： H03F3/16
CPC分类号： H03F3/193 , H03F3/2176
摘要： Radio frequency/millimeter wave integrated circuits (RF/MMICs) that employ a resonance mechanism between an input stage and a transistor are disclosed. The circuits contain an input stage, a transistor; and a transformer connected between either a gate or a base of the transistor and a voltage supply of the input stage. The methods disclosed maximize either a collector current or a drain current of a transistor by placing a transformer between the transistor and a voltage source.
摘要翻译： 公开了在输入级和晶体管之间采用共振机构的射频/毫米波集成电路（RF / MMIC）。 电路包含输入级，晶体管; 以及连接在晶体管的栅极或基极与输入级的电压源之间的变压器。 所公开的方法通过在晶体管和电压源之间放置变压器来最大化晶体管的集电极电流或漏极电流。
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公开(公告)号：US08164401B2
公开(公告)日：2012-04-24
申请号：US12947450
申请日：2010-11-16
CPC分类号： H01L27/0808 , H01L23/5223 , H01L29/93 , H01L29/94 , H01L2924/0002 , H01L2924/3011 , H01P1/18 , H03B5/187 , H03L7/04 , H03L7/0812 , H01L2924/00
摘要： Tuning devices and methods are disclosed. One of the devices comprises a metal structure connected with artificial dielectric elements, and variable capacitance devices. Each variable capacitance device is connected with a respective artificial dielectric element and with a control signal. Control of the variation of the capacitance allows the desired tuning. Another device comprises metallic structures connected with artificial dielectric elements and switches connected between the artificial dielectric elements. Turning ON and OFF the switches allows the capacitance between artificial dielectric elements to be varied and a signal guided by the metallic structures to be tuned.
摘要翻译： 公开了调谐装置和方法。 其中一个装置包括与人造电介质元件连接的金属结构和可变电容器件。 每个可变电容器件与相应的人造电介质元件和控制信号连接。 控制电容的变化允许期望的调谐。 另一个装置包括与人工介电元件连接的金属结构和连接在人造介电元件之间的开关。 打开和关闭开关允许人造介质元件之间的电容变化，并且由金属结构引导的信号进行调谐。
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公开(公告)号：US07852176B2
公开(公告)日：2010-12-14
申请号：US11996578
申请日：2006-07-25
CPC分类号： H01L27/0808 , H01L23/5223 , H01L29/93 , H01L29/94 , H01L2924/0002 , H01L2924/3011 , H01P1/18 , H03B5/187 , H03L7/04 , H03L7/0812 , H01L2924/00
摘要： Tuning devices and methods are disclosed. One of the devices comprises a metal structure connected with artificial dielectric elements, and variable capacitance devices. Each variable capacitance device is connected with a respective artificial dielectric element and with a control signal. Control of the variation of the capacitance allows the desired tuning. Another device comprises metallic structures connected with artificial dielectric elements and switches connected between the artificial dielectric elements. Turning ON and OFF the switches allows the capacitance between artificial dielectric elements to be varied and a signal guided by the metallic structures to be tuned.
摘要翻译： 公开了调谐装置和方法。 其中一个装置包括与人造电介质元件连接的金属结构和可变电容器件。 每个可变电容器件与相应的人造电介质元件和控制信号连接。 控制电容的变化允许期望的调谐。 另一个装置包括与人工介电元件连接的金属结构和连接在人造介电元件之间的开关。 打开和关闭开关允许人造介质元件之间的电容变化，并且由金属结构引导的信号进行调谐。
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