Tunable Artificial Dielectrics
    1.
    发明申请
    Tunable Artificial Dielectrics 有权
    可调人造电介质

    公开(公告)号:US20080204170A1

    公开(公告)日:2008-08-28

    申请号:US11996578

    申请日:2006-07-25

    IPC分类号: H01P1/20 H01G7/06 H03B5/12

    摘要: Tuning devices and methods are disclosed. One of the devices comprises a metal structure connected with artificial dielectric elements, and variable capacitance devices. Each variable capacitance device is connected with a respective artificial dielectric element and with a control signal. Control of the variation of the capacitance allows the desired tuning. Another device comprises metallic structures connected with artificial dielectric elements and switches connected between the artificial dielectric elements. Turning ON and OFF the switches allows the capacitance between artificial dielectric elements to be varied and a signal guided by the metallic structures to be tuned.

    摘要翻译: 公开了调谐装置和方法。 其中一个装置包括与人造电介质元件连接的金属结构和可变电容器件。 每个可变电容器件与相应的人造电介质元件和控制信号连接。 控制电容的变化允许期望的调谐。 另一个装置包括与人工介电元件连接的金属结构和连接在人造介电元件之间的开关。 打开和关闭开关允许人造介质元件之间的电容变化,并且由金属结构引导的信号进行调谐。

    TUNABLE ARTIFICIAL DIELECTRICS
    2.
    发明申请
    TUNABLE ARTIFICIAL DIELECTRICS 有权
    人造人造电路

    公开(公告)号:US20110140798A1

    公开(公告)日:2011-06-16

    申请号:US12947450

    申请日:2010-11-16

    IPC分类号: H03B1/00 H03J1/06

    摘要: Tuning devices and methods are disclosed. One of the devices comprises a metal structure connected with artificial dielectric elements, and variable capacitance devices. Each variable capacitance device is connected with a respective artificial dielectric element and with a control signal. Control of the variation of the capacitance allows the desired tuning. Another device comprises metallic structures connected with artificial dielectric elements and switches connected between the artificial dielectric elements. Turning ON and OFF the switches allows the capacitance between artificial dielectric elements to be varied and a signal guided by the metallic structures to be tuned.

    摘要翻译: 公开了调谐装置和方法。 其中一个装置包括与人造电介质元件连接的金属结构和可变电容器件。 每个可变电容器件与相应的人造电介质元件和控制信号连接。 控制电容的变化允许期望的调谐。 另一个装置包括与人工介电元件连接的金属结构和连接在人造介电元件之间的开关。 打开和关闭开关允许人造介质元件之间的电容变化,并且由金属结构引导的信号进行调谐。

    Tunable artificial dielectrics
    3.
    发明授权
    Tunable artificial dielectrics 有权
    可调人造电介质

    公开(公告)号:US08164401B2

    公开(公告)日:2012-04-24

    申请号:US12947450

    申请日:2010-11-16

    IPC分类号: H01P3/08 H03B5/18

    摘要: Tuning devices and methods are disclosed. One of the devices comprises a metal structure connected with artificial dielectric elements, and variable capacitance devices. Each variable capacitance device is connected with a respective artificial dielectric element and with a control signal. Control of the variation of the capacitance allows the desired tuning. Another device comprises metallic structures connected with artificial dielectric elements and switches connected between the artificial dielectric elements. Turning ON and OFF the switches allows the capacitance between artificial dielectric elements to be varied and a signal guided by the metallic structures to be tuned.

    摘要翻译: 公开了调谐装置和方法。 其中一个装置包括与人造电介质元件连接的金属结构和可变电容器件。 每个可变电容器件与相应的人造电介质元件和控制信号连接。 控制电容的变化允许期望的调谐。 另一个装置包括与人工介电元件连接的金属结构和连接在人造介电元件之间的开关。 打开和关闭开关允许人造介质元件之间的电容变化,并且由金属结构引导的信号进行调谐。

    Tunable artificial dielectrics
    4.
    发明授权
    Tunable artificial dielectrics 有权
    可调人造电介质

    公开(公告)号:US07852176B2

    公开(公告)日:2010-12-14

    申请号:US11996578

    申请日:2006-07-25

    IPC分类号: H01P3/08 H03B5/18

    摘要: Tuning devices and methods are disclosed. One of the devices comprises a metal structure connected with artificial dielectric elements, and variable capacitance devices. Each variable capacitance device is connected with a respective artificial dielectric element and with a control signal. Control of the variation of the capacitance allows the desired tuning. Another device comprises metallic structures connected with artificial dielectric elements and switches connected between the artificial dielectric elements. Turning ON and OFF the switches allows the capacitance between artificial dielectric elements to be varied and a signal guided by the metallic structures to be tuned.

    摘要翻译: 公开了调谐装置和方法。 其中一个装置包括与人造电介质元件连接的金属结构和可变电容器件。 每个可变电容器件与相应的人造电介质元件和控制信号连接。 控制电容的变化允许期望的调谐。 另一个装置包括与人工介电元件连接的金属结构和连接在人造介电元件之间的开关。 打开和关闭开关允许人造介质元件之间的电容变化,并且由金属结构引导的信号进行调谐。

    Resonant Types Of Common-Source/Common-Emitter Struture For High Gain Amplification
    9.
    发明申请
    Resonant Types Of Common-Source/Common-Emitter Struture For High Gain Amplification 审中-公开
    用于高增益放大的共源/共发射极共振共振类型

    公开(公告)号:US20080197929A1

    公开(公告)日:2008-08-21

    申请号:US11996582

    申请日:2006-07-31

    IPC分类号: H03F3/16

    CPC分类号: H03F3/193 H03F3/2176

    摘要: Radio frequency/millimeter wave integrated circuits (RF/MMICs) that employ a resonance mechanism between an input stage and a transistor are disclosed. The circuits contain an input stage, a transistor; and a transformer connected between either a gate or a base of the transistor and a voltage supply of the input stage. The methods disclosed maximize either a collector current or a drain current of a transistor by placing a transformer between the transistor and a voltage source.

    摘要翻译: 公开了在输入级和晶体管之间采用共振机构的射频/毫米波集成电路(RF / MMIC)。 电路包含输入级,晶体管; 以及连接在晶体管的栅极或基极与输入级的电压源之间的变压器。 所公开的方法通过在晶体管和电压源之间放置变压器来最大化晶体管的集电极电流或漏极电流。