公开(公告)号：US09559308B1

公开(公告)日：2017-01-31

申请号：US14800431

申请日：2015-07-15

申请人： Melody E. Grubbs ,  Andre E. Berghmans ,  Matthew J. Walker ,  Monica P. Lilly

发明人： Melody E. Grubbs ,  Andre E. Berghmans ,  Matthew J. Walker ,  Monica P. Lilly

IPC分类号： H01L51/00 ,  H01L21/02 ,  H01L51/05

CPC分类号： H01L21/02606 ,  C01B32/16 ,  H01L2924/13061

摘要： A method of forming carbon nanotubes (CNTs) is disclosed. The method includes dispersing a plurality of substantially semiconductor pure carbon nanotube (CNT) seeds on a substrate to provide a seeded substrate, ozonating the seeded substrate to remove defects on end faces of the plurality of substantially semiconductor pure CNT seeds, and growing carbon extensions on the end faces of the plurality of substantially semiconductor pure CNTs seeds to form a plurality of substantially pure CNTs.

摘要翻译： 公开了形成碳纳米管（CNT）的方法。 该方法包括将多个基本上半导体纯碳纳米管（CNT）种子分散在基底上以提供接种的基底，使接种的基底臭氧化以除去多个基本上半导体纯的CNT种子的端面上的缺陷，以及生长碳扩展 多个基本上半导体纯的CNT的端面种子形成多个基本上纯的CNT。

公开(公告)号：US09748506B1

公开(公告)日：2017-08-29

申请号：US15340499

申请日：2016-11-01

申请人： James T. Kelliher ,  Monica P. Lilly ,  Robert S. Howell ,  Wayne Stephen Miller ,  Patrick B. Shea ,  Matthew J. Walker ,  William J. Sweet

发明人： James T. Kelliher ,  Monica P. Lilly ,  Robert S. Howell ,  Wayne Stephen Miller ,  Patrick B. Shea ,  Matthew J. Walker ,  William J. Sweet

IPC分类号： H01L29/76 ,  H01L51/05 ,  H01L51/00

CPC分类号： H01L51/0533 ,  H01L51/0048 ,  H01L51/0566

摘要： One example includes a semiconductor device. The semiconductor device include a carbon nanotube substrate, a self-assembled monolayer, and a gate oxide. The self-assembled monolayer overlies the carbon nanotube substrate and is comprised of molecules each including a tail group, a carbon backbone, and a head group. The gate oxide overlies the self-assembled monolayer, wherein the self-assembled monolayer forms an interface between the carbon nanotube substrate and the gate oxide.

公开(公告)号：US10069093B2

公开(公告)日：2018-09-04

申请号：US15642066

申请日：2017-07-05

申请人： James T. Kelliher ,  Monica P. Lilly ,  Robert S. Howell ,  Wayne Stephen Miller ,  Patrick B. Shea ,  Matthew J. Walker ,  William J. Sweet

发明人： James T. Kelliher ,  Monica P. Lilly ,  Robert S. Howell ,  Wayne Stephen Miller ,  Patrick B. Shea ,  Matthew J. Walker ,  William J. Sweet

IPC分类号： H01L51/00 ,  H01L29/76 ,  H01L51/05

摘要： One example includes a semiconductor device. The semiconductor device include a carbon nanotube substrate, a self-assembled monolayer, and a gate oxide. The self-assembled monolayer overlies the carbon nanotube substrate and is comprised of molecules each including a tail group, a carbon backbone, and a head group. The gate oxide overlies the self-assembled monolayer, wherein the self-assembled monolayer forms an interface between the carbon nanotube substrate and the gate oxide.

公开(公告)号：US10998485B1

公开(公告)日：2021-05-04

申请号：US16741341

申请日：2020-01-13

申请人： John X. Przybysz ,  Robert M. Young ,  Aaron Ashley Hathaway ,  Edward R. Engbrecht ,  Monica P. Lilly

发明人： John X. Przybysz ,  Robert M. Young ,  Aaron Ashley Hathaway ,  Edward R. Engbrecht ,  Monica P. Lilly

IPC分类号： H01L39/18 ,  H01L39/02 ,  H01L23/00 ,  H01L39/24

摘要： A solid state cooler device is disclosed that includes a first superconductor shunt, a first normal metal pad disposed on the first superconductor shunt, and a first insulator layer and a second insulator layer disposed on the normal metal pad and separated from one another by a gap. The solid state cooler device also includes a first superconductor pad disposed on the first insulator layer and a second superconductor pad disposed on the second insulator layer, a first conductive pad coupled to the first superconductor pad, and a second conductive pad coupled to the second superconductor pad. Hot electrons are removed from the first normal metal pad when a bias voltage is applied between the first conductive pad and the second conductive pad, wherein the first superconductor shunt facilitates even current distribution through the device.

公开(公告)号：US10224413B1

公开(公告)日：2019-03-05

申请号：US13361461

申请日：2012-01-30

申请人： Joseph A. Payne ,  Wayne S. Miller ,  Monica P. Lilly ,  Silai V. Krishnaswamy

发明人： Joseph A. Payne ,  Wayne S. Miller ,  Monica P. Lilly ,  Silai V. Krishnaswamy

IPC分类号： B82Y40/00 ,  H01L29/66 ,  H01L29/786 ,  H01L29/78

摘要： A radio-frequency (RF) carbon-nanotube (CNT) field effect transistor (FET) device. The device includes a source contact, a drain contact, semi-conducting CNTs positioned between the source and drain contacts, high-κ gate dielectric, and a local backgate positioned below the semi-conducting CNTs, in which the local backgate is capable of RF performance and is capable of being used in a backgate burnout process used to enhance the semiconducting to metallic tube ratio of the device.