公开(公告)号：US09559308B1

公开(公告)日：2017-01-31

申请号：US14800431

申请日：2015-07-15

申请人： Melody E. Grubbs ,  Andre E. Berghmans ,  Matthew J. Walker ,  Monica P. Lilly

发明人： Melody E. Grubbs ,  Andre E. Berghmans ,  Matthew J. Walker ,  Monica P. Lilly

IPC分类号： H01L51/00 ,  H01L21/02 ,  H01L51/05

CPC分类号： H01L21/02606 ,  C01B32/16 ,  H01L2924/13061

摘要： A method of forming carbon nanotubes (CNTs) is disclosed. The method includes dispersing a plurality of substantially semiconductor pure carbon nanotube (CNT) seeds on a substrate to provide a seeded substrate, ozonating the seeded substrate to remove defects on end faces of the plurality of substantially semiconductor pure CNT seeds, and growing carbon extensions on the end faces of the plurality of substantially semiconductor pure CNTs seeds to form a plurality of substantially pure CNTs.

摘要翻译： 公开了形成碳纳米管（CNT）的方法。 该方法包括将多个基本上半导体纯碳纳米管（CNT）种子分散在基底上以提供接种的基底，使接种的基底臭氧化以除去多个基本上半导体纯的CNT种子的端面上的缺陷，以及生长碳扩展 多个基本上半导体纯的CNT的端面种子形成多个基本上纯的CNT。

公开(公告)号：US07888248B2

公开(公告)日：2011-02-15

申请号：US11826278

申请日：2007-07-13

申请人： Narsingh Bahadur Singh ,  Brian P. Wagner ,  David J. Knuteson ,  David Kahler ,  Andre E. Berghmans ,  Michael Aumer ,  Jerry W. Hedrick ,  Marc E. Sherwin ,  Michael M. Fitelson ,  Mark S. Usefara ,  Sean McLaughlin ,  Travis Randall ,  Thomas J. Knight

发明人： Narsingh Bahadur Singh ,  Brian P. Wagner ,  David J. Knuteson ,  David Kahler ,  Andre E. Berghmans ,  Michael Aumer ,  Jerry W. Hedrick ,  Marc E. Sherwin ,  Michael M. Fitelson ,  Mark S. Usefara ,  Sean McLaughlin ,  Travis Randall ,  Thomas J. Knight

IPC分类号： H01L21/20

CPC分类号： C30B25/105 ,  C30B23/02 ,  C30B25/02 ,  C30B29/36 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02447 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02658 ,  Y10T428/259

摘要： A method for growing a SiC-containing film on a Si substrate is disclosed. The SiC-containing film can be formed on a Si substrate by, for example, plasma sputtering, chemical vapor deposition, or atomic layer deposition. The thus-grown SiC-containing film provides an alternative to expensive SiC wafers for growing semiconductor crystals.

摘要翻译： 公开了一种在Si衬底上生长含SiC膜的方法。 可以通过例如等离子体溅射，化学气相沉积或原子层沉积在Si衬底上形成含SiC的膜。 这样生长的含SiC膜提供了用于生长半导体晶体的昂贵的SiC晶圆的替代方案。

公开(公告)号：US08278666B1

公开(公告)日：2012-10-02

申请号：US12821877

申请日：2010-06-23

申请人： Narsingh B. Singh ,  Sean R. McLaughlin ,  Thomas J. Knight ,  Robert M. Young ,  Brian P. Wagner ,  David A. Kahler ,  Andre E. Berghmans ,  David J. Knuteson ,  Ty R. McNutt ,  Jerry W. Hedrick, Jr. ,  George M. Bates ,  Kenneth Petrosky

发明人： Narsingh B. Singh ,  Sean R. McLaughlin ,  Thomas J. Knight ,  Robert M. Young ,  Brian P. Wagner ,  David A. Kahler ,  Andre E. Berghmans ,  David J. Knuteson ,  Ty R. McNutt ,  Jerry W. Hedrick, Jr. ,  George M. Bates ,  Kenneth Petrosky

IPC分类号： H01L29/15 ,  H01L31/0312

CPC分类号： H01L21/02381 ,  C30B23/02 ,  C30B25/02 ,  C30B25/183 ,  C30B29/36 ,  C30B29/403 ,  H01L21/02447 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262

摘要： The disclosure relates to a high purity 2H-SiC composition and methods for making same. The embodiments represented herein apply to both thin film and bulk growth of 2H-SiC. According to one embodiment, the disclosure relates to doping an underlying substrate or support layer with one or more surfactants to nucleate and grow high purity 2H-SiC. In another embodiment, the disclosure relates to a method for preparing 2H-SiC compositions by nucleating 2H-SiC on another SiC polytype using one or more surfactants. The surfactants can include AlN, Te, Sb and similar compositions. These nucleate SiC into disc form which changes to hexagonal 2H-SiC material.

摘要翻译： 本公开涉及高纯度2H-SiC组合物及其制备方法。 这里所示的实施方案适用于2H-SiC的薄膜和体积生长。 根据一个实施方案，本公开涉及用一种或多种表面活性剂掺杂下面的基底或支撑层以使高纯度2H-SiC成核和生长。 在另一个实施方案中，本公开内容涉及通过使用一种或多种表面活性剂在其它SiC多型体上成核2H-SiC制备2H-SiC组合物的方法。 表面活性剂可以包括AlN，Te，Sb和类似组合物。 这些将SiC成核转变成六角形2H-SiC材料的盘形。

公开(公告)号：US20090220801A1

公开(公告)日：2009-09-03

申请号：US12040785

申请日：2008-02-29

申请人： Brian Wagner ,  Travis J. Randall ,  Thomas J. Knight ,  David J. Knuteson ,  David Kahler ,  Andre E. Berghmans ,  Sean R. McLaughlin ,  Narsingh B. Singh ,  Mark Usefara

发明人： Brian Wagner ,  Travis J. Randall ,  Thomas J. Knight ,  David J. Knuteson ,  David Kahler ,  Andre E. Berghmans ,  Sean R. McLaughlin ,  Narsingh B. Singh ,  Mark Usefara

IPC分类号： C23C14/34 ,  B32B9/04

CPC分类号： C30B29/36 ,  C30B23/02

摘要： The disclosure relates to a method and apparatus for growth of high-purity 6H SiC single crystal using a sputtering technique. In one embodiment, the disclosure relates to a method for depositing a high purity 6H-SiC single crystal film on a substrate, the method including: providing a silicon substrate having an etched surface; placing the substrate and an SiC source in a deposition chamber; achieving a first vacuum level in the deposition chamber; pressurizing the chamber with a gas; depositing the SiC film directly on the etched silicon substrate from a sputtering source by: heating the substrate to a temperature below silicon melting point, using a low energy plasma in the deposition chamber; and depositing a layer of hexagonal SiC film on the etched surface of the substrate.

摘要翻译： 本公开涉及使用溅射技术生长高纯度6H SiC单晶的方法和装置。 在一个实施方案中，本公开涉及一种用于在基底上沉积高纯度6H-SiC单晶膜的方法，所述方法包括：提供具有蚀刻表面的硅衬底; 将衬底和SiC源放置在沉积室中; 在沉积室中达到第一真空度; 用气体对腔室加压; 通过以下方式将SiC膜直接沉积在蚀刻的硅衬底上：使用沉积室中的低能量等离子体将衬底加热到​​低于硅熔点的温度; 以及在衬底的蚀刻表面上沉积一层六方形的SiC膜。

公开(公告)号：US20090014756A1

公开(公告)日：2009-01-15

申请号：US11826278

申请日：2007-07-13

申请人： Narsingh Bahadur Singh ,  Brian P. Wagner ,  David J. Knuteson ,  David Kahler ,  Andre E. Berghmans ,  Michael Aumer ,  Jerry W. Hedrick ,  Marc E. Sherwin ,  Michael M. Fitelson ,  Mark S. Usefara ,  Sean McLaughlin ,  Travis Randall ,  Thomas J. Knight

发明人： Narsingh Bahadur Singh ,  Brian P. Wagner ,  David J. Knuteson ,  David Kahler ,  Andre E. Berghmans ,  Michael Aumer ,  Jerry W. Hedrick ,  Marc E. Sherwin ,  Michael M. Fitelson ,  Mark S. Usefara ,  Sean McLaughlin ,  Travis Randall ,  Thomas J. Knight

IPC分类号： H01L29/739 ,  B32B5/16 ,  H01L21/20

CPC分类号： C30B25/105 ,  C30B23/02 ,  C30B25/02 ,  C30B29/36 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02447 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02658 ,  Y10T428/259

摘要： A method for growing a SiC-containing film on a Si substrate is disclosed. The SiC-containing film can be formed on a Si substrate by, for example, plasma sputtering, chemical vapor deposition, or atomic layer deposition. The thus-grown SiC-containing film provides an alternative to expensive SiC wafers for growing semiconductor crystals.

摘要翻译： 公开了一种在Si衬底上生长含SiC膜的方法。 可以通过例如等离子体溅射，化学气相沉积或原子层沉积在Si衬底上形成含SiC的膜。 这样生长的含SiC膜提供了用于生长半导体晶体的昂贵的SiC晶圆的替代方案。

公开(公告)号：US06783740B2

公开(公告)日：2004-08-31

申请号：US10261268

申请日：2002-09-30

申请人： Mary W. Colby ,  Andre E. Berghmans ,  Donald DiMarzio ,  Ronald Pirich

发明人： Mary W. Colby ,  Andre E. Berghmans ,  Donald DiMarzio ,  Ronald Pirich

IPC分类号： B01J1908

CPC分类号： B01D39/201 ,  A61L9/00 ,  B01D53/8687 ,  B01D53/885 ,  B01D2255/802 ,  F24F3/1603 ,  F24F2003/1667

摘要： A microbicidal filter system having superior drop pressure and low complexity is provided, as well as a method for producing the same. The system comprises a plurality of glass beads having pores formed therebetween for the flow of air therethrough. The sintered glass beads are coated in a transition metal oxide and water. An ultraviolet light source is used to cause a photocatalytic reaction between the transition metal oxide and water. Free hydroxyl radicals with microbicidal properties are produced. Urethane foam may be inserted between the glass beads before sintering in order to cause a bimodal pore size distribution, and particulates disposed on the glass beads may be added to alter surface activity.