公开(公告)号：US20160133700A1

公开(公告)日：2016-05-12

申请号：US14982852

申请日：2015-12-29

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  STMICROELECTRONICS (CROLLES 2) SAS

发明人： Sylvain BARRAUD ,  Yves MORAND

IPC分类号： H01L29/06 ,  H01L27/12 ,  H01L29/78

CPC分类号： H01L29/0673 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/0669 ,  H01L29/413 ,  H01L29/785 ,  H01L29/78648 ,  H01L29/78696 ,  H01L51/057 ,  H01L51/444 ,  H01L2924/13061 ,  H01L2924/13086

摘要： Fabrication of a microelectronic device on a semiconductor on insulator type substrate, the device being provided with a transistor of a given type, the channel structure of which is formed from semiconducting bar(s), a dielectric area different from the insulating layer of the substrate being provided to replace the insulating layer, facing the transistor channel structure, specifically for this given type of transistor.

摘要翻译： 在半导体绝缘体型衬底上制造微电子器件，该器件设置有给定类型的晶体管，其沟道结构由半导体棒形成，不同于衬底的绝缘层的电介质区域 被提供以替代面向晶体管沟道结构的绝缘层，具体用于该给定类型的晶体管。

公开(公告)号：US20160093806A1

公开(公告)日：2016-03-31

申请号：US14501874

申请日：2014-09-30

申请人： CNM Technologies GmbH

发明人： Andrey Turchanin

IPC分类号： H01L51/00 ,  G01N27/414 ,  H01L51/05 ,  H01B13/00 ,  B32B9/00

CPC分类号： H01L51/0045 ,  B01J20/28007 ,  B32B9/007 ,  B32B2457/00 ,  C01B3/0021 ,  G01N27/4145 ,  G01N27/4146 ,  G11C13/025 ,  H01B13/0026 ,  H01F1/0081 ,  H01L29/7786 ,  H01L31/1075 ,  H01L51/0046 ,  H01L51/0096 ,  H01L51/0545 ,  H01L51/0562 ,  H01L2224/80493 ,  H01L2924/13061 ,  H01L2924/13064

摘要： A heterostructure comprising at least one carbon nanomembrane on top of at least one carbon layer, a method of manufacture of the heterostructure, and an electronic device, a sensor and a diagnostic device comprising the heterostructure. The heterostructure comprises at least one carbon nanomembrane on top of at least one carbon layer, wherein the at least one carbon nanomembrane has a thickness of 0.5 to 5 nm and the heterostructure has a thickness of 1 to 10 nm.

摘要翻译： 包含至少一个碳层顶部的至少一个碳纳米膜的异质结构，异质结构的制造方法和电子器件，传感器和包括异质结构的诊断装置。 所述异质结构在至少一个碳层的顶部上包​​含至少一个碳纳米膜，其中所述至少一个碳纳米膜具有0.5至5nm的厚度，并且所述异质结构具有1至10nm的厚度。

公开(公告)号：US20170248590A1

公开(公告)日：2017-08-31

申请号：US15097899

申请日：2016-04-13

申请人： National Tsing Hua University

发明人： Yu-Lin Wang ,  Chen-Pin Hsu ,  Pei-Chi Chen

IPC分类号： G01N33/543 ,  H01L23/00 ,  H01L23/29 ,  H01L23/498 ,  H01L21/56 ,  H01L21/48

CPC分类号： H01L24/32 ,  G01D11/245 ,  H01L21/4846 ,  H01L21/565 ,  H01L23/3107 ,  H01L2224/32225 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01042 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/04941 ,  H01L2924/0496 ,  H01L2924/0509 ,  H01L2924/06 ,  H01L2924/0635 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/1033 ,  H01L2924/10344 ,  H01L2924/1082 ,  H01L2924/1203 ,  H01L2924/1304 ,  H01L2924/1306 ,  H01L2924/13061 ,  H01L2924/13064 ,  H01L2924/146 ,  H01L2924/1461 ,  H01L2924/15747 ,  H01L2924/20102 ,  H01L2924/20103 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20106

摘要： Provided is a manufacturing method of a sensor including the following steps. A mold having a cavity is provided. At least one chip is disposed in the cavity. The chip has an active surface and a back surface opposite to each other. The active surface faces toward a bottom surface of the cavity. A polymer material is filled in the cavity to cover the back surface of the chip. A heat treatment is performed, such that the polymer material is solidified to form a polymer substrate. A mold release treatment is performed to isolate the polymer substrate from the cavity. A plurality of conductive lines are formed on a first surface of the polymer substrate. The conductive lines are electrically connected with the chip.

公开(公告)号：US20170018716A1

公开(公告)日：2017-01-19

申请号：US14800431

申请日：2015-07-15

申请人： MELODY E. GRUBBS ,  ANDRE E. BERGHMANS ,  MATTHEW J. WALKER ,  MONICA P. LILLY

发明人： MELODY E. GRUBBS ,  ANDRE E. BERGHMANS ,  MATTHEW J. WALKER ,  MONICA P. LILLY

IPC分类号： H01L51/00

CPC分类号： H01L21/02606 ,  C01B32/16 ,  H01L2924/13061

摘要： A method of forming carbon nanotubes (CNTs) is disclosed. The method includes dispersing a plurality of substantially semiconductor pure carbon nanotube (CNT) seeds on a substrate to provide a seeded substrate, ozonating the seeded substrate to remove defects on end faces of the plurality of substantially semiconductor pure CNT seeds, and growing carbon extensions on the end faces of the plurality of substantially semiconductor pure CNTs seeds to form a plurality of substantially pure CNTs.

摘要翻译： 公开了形成碳纳米管（CNT）的方法。 该方法包括将多个基本上半导体纯碳纳米管（CNT）种子分散在基底上以提供接种的基底，使接种的基底臭氧化以除去多个基本上半导体纯的CNT种子的端面上的缺陷，以及生长碳扩展 多个基本上半导体纯的CNT的端面种子形成多个基本上纯的CNT。

公开(公告)号：US09614067B2

公开(公告)日：2017-04-04

申请号：US14604127

申请日：2015-01-23

申请人： KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION

发明人： Sang Sig Kim ,  Young In Jeon ,  Min Suk Kim ,  Doo Hyuk Lim ,  Yoonjoong Kim

IPC分类号： H01L29/775 ,  H01L29/66 ,  H01L21/02 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/423 ,  H01L29/06

CPC分类号： H01L29/775 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/02601 ,  H01L29/0673 ,  H01L29/42364 ,  H01L29/66356 ,  H01L29/66439 ,  H01L29/7391 ,  H01L2924/13061

摘要： A semiconductor device comprising: an insulation substrate; an intrinsic semiconductor nanowire formed on the insulation substrate and having both ends doped in a p-type and an n-type, respectively and a region, which is not doped, between the doped region; doped region electrodes formed on each of the p-type doped region and the n-type doped region of the semiconductor nanowire; a lower insulation layer formed on an intrinsic region of the semiconductor nanowire; an intrinsic region electrode formed on a part of the lower insulation layer; and a metal or semiconductor nanoparticle region formed on the lower insulation layer and between the intrinsic region electrode and the doped region electrode and spaced apart from the electrodes.

公开(公告)号：US09425255B2

公开(公告)日：2016-08-23

申请号：US14982852

申请日：2015-12-29

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  STMICROELECTRONICS (CROLLES 2) SAS

发明人： Sylvain Barraud ,  Yves Morand

IPC分类号： H01L29/06 ,  H01L21/84 ,  H01L51/05 ,  H01L29/41 ,  H01L51/44 ,  H01L29/786 ,  H01L27/12 ,  H01L29/78

CPC分类号： H01L29/0673 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/0669 ,  H01L29/413 ,  H01L29/785 ,  H01L29/78648 ,  H01L29/78696 ,  H01L51/057 ,  H01L51/444 ,  H01L2924/13061 ,  H01L2924/13086

摘要： Fabrication of a microelectronic device on a semiconductor on insulator type substrate, the device being provided with a transistor of a given type, the channel structure of which is formed from semiconducting bar(s), a dielectric area different from the insulating layer of the substrate being provided to replace the insulating layer, facing the transistor channel structure, specifically for this given type of transistor.

摘要翻译： 在半导体绝缘体型衬底上制造微电子器件，该器件设置有给定类型的晶体管，其沟道结构由半导体棒形成，不同于衬底的绝缘层的电介质区域 被提供以替代面向晶体管沟道结构的绝缘层，具体用于该给定类型的晶体管。

公开(公告)号：US09276073B2

公开(公告)日：2016-03-01

申请号：US14266999

申请日：2014-05-01

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT ,  STMICROELECTRONICS (CROLLES 2) SAS

发明人： Sylvain Barraud ,  Yves Morand

IPC分类号： H01L21/84 ,  H01L29/06 ,  H01L29/41 ,  H01L51/05 ,  H01L51/44 ,  H01L29/786 ,  H01L27/12

CPC分类号： H01L29/0673 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/0669 ,  H01L29/413 ,  H01L29/785 ,  H01L29/78648 ,  H01L29/78696 ,  H01L51/057 ,  H01L51/444 ,  H01L2924/13061 ,  H01L2924/13086

摘要： Fabrication of a microelectronic device on a semiconductor on insulator type substrate, the device being provided with a transistor of a given type, the channel structure of which is formed from semiconducting bar(s), a dielectric area different from the insulating layer of the substrate being provided to replace the insulating layer, facing the transistor channel structure, specifically for this given type of transistor.

公开(公告)号：US09735366B2

公开(公告)日：2017-08-15

申请号：US14501874

申请日：2014-09-30

申请人： CNM Technologies GmbH

发明人： Andrey Turchanin

IPC分类号： H01L29/06 ,  H01L31/00 ,  B05D5/12 ,  B05D3/00 ,  B05D3/06 ,  C08J7/18 ,  B32B27/32 ,  H01L51/00 ,  H01B13/00 ,  B32B9/00 ,  H01L51/05 ,  G01N27/414 ,  B01J20/28 ,  H01L31/107 ,  H01L29/778 ,  C01B3/00 ,  G11C13/02 ,  H01F1/00

CPC分类号： H01L51/0045 ,  B01J20/28007 ,  B32B9/007 ,  B32B2457/00 ,  C01B3/0021 ,  G01N27/4145 ,  G01N27/4146 ,  G11C13/025 ,  H01B13/0026 ,  H01F1/0081 ,  H01L29/7786 ,  H01L31/1075 ,  H01L51/0046 ,  H01L51/0096 ,  H01L51/0545 ,  H01L51/0562 ,  H01L2224/80493 ,  H01L2924/13061 ,  H01L2924/13064

摘要： A heterostructure comprising at least one carbon nanomembrane on top of at least one carbon layer, a method of manufacture of the heterostructure, and an electronic device, a sensor and a diagnostic device comprising the heterostructure. The heterostructure comprises at least one carbon nanomembrane on top of at least one carbon layer, wherein the at least one carbon nanomembrane has a thickness of 0.5 to 5 nm and the heterostructure has a thickness of 1 to 10 nm.

公开(公告)号：US09559308B1

公开(公告)日：2017-01-31

申请号：US14800431

申请日：2015-07-15

申请人： Melody E. Grubbs ,  Andre E. Berghmans ,  Matthew J. Walker ,  Monica P. Lilly

发明人： Melody E. Grubbs ,  Andre E. Berghmans ,  Matthew J. Walker ,  Monica P. Lilly

IPC分类号： H01L51/00 ,  H01L21/02 ,  H01L51/05

CPC分类号： H01L21/02606 ,  C01B32/16 ,  H01L2924/13061

摘要： A method of forming carbon nanotubes (CNTs) is disclosed. The method includes dispersing a plurality of substantially semiconductor pure carbon nanotube (CNT) seeds on a substrate to provide a seeded substrate, ozonating the seeded substrate to remove defects on end faces of the plurality of substantially semiconductor pure CNT seeds, and growing carbon extensions on the end faces of the plurality of substantially semiconductor pure CNTs seeds to form a plurality of substantially pure CNTs.

摘要翻译： 公开了形成碳纳米管（CNT）的方法。 该方法包括将多个基本上半导体纯碳纳米管（CNT）种子分散在基底上以提供接种的基底，使接种的基底臭氧化以除去多个基本上半导体纯的CNT种子的端面上的缺陷，以及生长碳扩展 多个基本上半导体纯的CNT的端面种子形成多个基本上纯的CNT。

公开(公告)号：US20160043207A1

公开(公告)日：2016-02-11

申请号：US14604127

申请日：2015-01-23

申请人： KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION

发明人： Sang Sig KIM ,  Young In JEON ,  Min Suk KIM ,  Doo Hyuk LIM

IPC分类号： H01L29/775 ,  H01L29/66

CPC分类号： H01L29/775 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/02601 ,  H01L29/0673 ,  H01L29/42364 ,  H01L29/66356 ,  H01L29/66439 ,  H01L29/7391 ,  H01L2924/13061

摘要： A semiconductor device comprising: an insulation substrate; an intrinsic semiconductor nanowire formed on the insulation substrate and having both ends doped in a p-type and an n-type, respectively and a region, which is not doped, between the doped region; doped region electrodes formed on each of the p-type doped region and the n-type doped region of the semiconductor nanowire; a lower insulation layer formed on an intrinsic region of the semiconductor nanowire; an intrinsic region electrode formed on a part of the lower insulation layer; and a metal or semiconductor nanoparticle region formed on the lower insulation layer and between the intrinsic region electrode and the doped region electrode and spaced apart from the electrodes.

摘要翻译： 一种半导体器件，包括：绝缘衬底; 在绝缘基板上形成的本征半导体纳米线分别掺杂有p型和n型的两端，并且在掺杂区域之间分别掺杂未被掺杂的区域; 形成在半导体纳米线的p型掺杂区域和n型掺杂区域中的每一个上的掺杂区域电极; 形成在所述半导体纳米线的本征区上的下部绝缘层; 形成在所述下绝缘层的一部分上的本征区电极; 以及金属或半导体纳米颗粒区域，形成在下部绝缘层上，本征区域电极和掺杂区域电极之间并与电极间隔开。