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    SEMICONDUCTOR LIGHT CONVERTING CONSTRUCTION
    2.
    发明申请
    SEMICONDUCTOR LIGHT CONVERTING CONSTRUCTION 有权
    半导体光转换结构

    公开(公告)号：US20110101403A1

    公开(公告)日：2011-05-05

    申请号：US13000598

    申请日：2009-06-01

    申请人： Michael A. Haase ,  Jun-Ying Zhang ,  Thomas J. Miller

    发明人： Michael A. Haase ,  Jun-Ying Zhang ,  Thomas J. Miller

    IPC分类号： H01L33/00 ,  G02F2/02

    CPC分类号： H01L25/0756 ,  H01L27/14603 ,  H01L27/14609 ,  H01L31/1013 ,  H01L33/44 ,  H01L33/50 ,  H01L51/5036 ,  H01L51/5262 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2933/0091 ,  H01L2924/00

    摘要： Semiconductor light converting constructions are disclosed. The semiconductor light converting construction includes a first semiconductor layer for absorbing at least a portion of light at a first wavelength; a semiconductor potential well for converting at least a portion of the light absorbed at the first wavelength to light at a longer second wavelength; and a second semiconductor layer that is capable of absorbing at least a portion of light at the first wavelength. The first semiconductor layer has a maximum first index of refraction at the second wavelength. The second semiconductor layer has a second index of refraction at the second wavelength that is greater than the maximum first index of refraction.

    摘要翻译： 公开了半导体光转换结构。 半导体光转换结构包括用于吸收第一波长的至少一部分光的第一半导体层; 用于将在第一波长处吸收的光的至少一部分转换成更长的第二波长的光的半导体势阱; 以及能够吸收第一波长的至少一部分光的第二半导体层。 第一半导体层在第二波长处具有最大的第一折射率。 第二半导体层在第二波长处具有大于最大第一折射率的第二折射率。

    METHOD OF FABRICATING LIGHT EXTRACTOR
    3.
    发明申请
    METHOD OF FABRICATING LIGHT EXTRACTOR 有权
    制造光提取物的方法

    公开(公告)号：US20110117686A1

    公开(公告)日：2011-05-19

    申请号：US13000604

    申请日：2009-06-03

    申请人： Jun-Ying Zhang ,  Michael A. Haase ,  Terry L. Smith

    发明人： Jun-Ying Zhang ,  Michael A. Haase ,  Terry L. Smith

    IPC分类号： H01L33/44

    CPC分类号： H01L33/44 ,  H01L33/08 ,  H01L33/502 ,  H01L2933/0091

    摘要： Methods of fabricating light extractors are disclosed. The method of fabricating an optical construction for extracting light from a substrate includes the steps of: (a) providing a substrate that has a surface; (b) disposing a plurality of structures on the surface of the substrate, where the plurality of structures form open areas that expose the surface of the substrate; (c) shrinking at least some of the structures; and (d) applying an overcoat to cover the shrunk structures and the surface of the substrate in the open areas.

    摘要翻译： 公开了提取光的方法。 制造用于从衬底提取光的光学结构的方法包括以下步骤：（a）提供具有表面的衬底; （b）在所述基板的表面上设置多个结构，其中所述多个结构形成暴露所述基板的表面的敞开区域; （c）收缩至少一些结构物; 和（d）施加外涂层以覆盖开放区域中的收缩结构和基底表面。

    Etching process for semiconductors
    6.
    发明授权
    Etching process for semiconductors 失效
    半导体蚀刻工艺

    公开(公告)号：US08765611B2

    公开(公告)日：2014-07-01

    申请号：US12917826

    申请日：2010-11-02

    申请人： Michael A. Haase ,  Terry L. Smith ,  Jun-Ying Zhang

    发明人： Michael A. Haase ,  Terry L. Smith ,  Jun-Ying Zhang

    IPC分类号： H01L21/027

    CPC分类号： H01L31/02363 ,  H01L21/465 ,  H01L33/0095 ,  H01L33/22 ,  H01L2933/0083 ,  Y02E10/50

    摘要： A process for etching semiconductors, such as II-VI or III-V semiconductors is provided. The method includes sputter etching the semiconductor through an etching mask using a nonreactive gas, removing the semiconductor and cleaning the chamber with a reactive gas. The etching mask includes a photoresist. Using this method, light-emitting diodes with light extracting elements or nano/micro-structures etched into the semiconductor material can be fabricated.

    摘要翻译： 提供了蚀刻半导体的方法，例如II-VI或III-V半导体。 该方法包括通过使用非反应性气体的蚀刻掩模溅射半导体蚀刻，去除半导体并用反应气体清洁室。 蚀刻掩模包括光致抗蚀剂。 使用这种方法，可以制造具有光提取元件的发光二极管或蚀刻到半导体材料中的纳米/微结构。

    SEMICONDUCTOR LIGHT CONVERTING CONSTRUCTION
    7.
    发明申请
    SEMICONDUCTOR LIGHT CONVERTING CONSTRUCTION 审中-公开
    半导体光转换结构

    公开(公告)号：US20110101402A1

    公开(公告)日：2011-05-05

    申请号：US13000592

    申请日：2009-06-10

    申请人： Jun-Ying Zhang ,  Terry L. Smith ,  Michael A. Haase

    发明人： Jun-Ying Zhang ,  Terry L. Smith ,  Michael A. Haase

    IPC分类号： H01L33/00

    CPC分类号： H01L33/50 ,  H01L33/08 ,  H01L33/44 ,  H01L2933/0091

    摘要： Semiconductor light converting constructions are disclosed. The semiconductor light converting construction includes a semiconductor potential well for converting at least a portion of light at a first wavelength to light at a longer second wavelength; an outer layer that is disposed on the semiconductor potential well and has a first index of refraction; and a structured layer that is disposed on the outer layer and has a second index of refraction that is smaller than the first index of refraction. The structured layer includes a plurality of structures that are disposed directly on the outer layer and a plurality of openings that expose the outer layer. The semiconductor light converting construction further includes a structured overcoat that is disposed directly on at least a portion of the structured layer and a portion of the outer layer in the plurality of openings. The overcoat has a third index of refraction that is greater than the second index of refraction.

    摘要翻译： 公开了半导体光转换结构。 半导体光转换结构包括用于将第一波长的至少一部分光转换成较长第二波长的光的半导体势阱; 外层，其设置在所述半导体势阱上并具有第一折射率; 以及设置在外层上并且具有小于第一折射率的第二折射率的结构化层。 结构化层包括直接设置在外层上的多个结构和暴露外层的多个开口。 半导体光转换结构还包括直接设置在结构化层的至少一部分上的多个开口中的外层的一部分的结构化外涂层。 外涂层具有大于第二折射率的第三折射率。

    Light converting construction
    8.
    发明授权
    Light converting construction 有权
    光转换建筑

    公开(公告)号：US08461608B2

    公开(公告)日：2013-06-11

    申请号：US13000608

    申请日：2009-06-03

    申请人： Terry L. Smith ,  Michael A. Haase ,  Jun-Ying Zhang

    发明人： Terry L. Smith ,  Michael A. Haase ,  Jun-Ying Zhang

    IPC分类号： H01L33/00

    CPC分类号： H01L33/44 ,  H01L33/08 ,  H01L33/502 ,  H01L2924/0002 ,  H01L2933/0091 ,  H01L2924/00

    摘要： Light converting constructions are disclosed. The light converting construction includes a phosphor slab that has a first index of refraction for converting at least a portion of light at a first wavelength to light at a longer second wavelength; and a structured layer that is disposed on the phosphor slab and has a second index of refraction that is smaller than the first index of refraction. The structured layer includes a plurality of structures that are disposed directly on the phosphor slab and a plurality of openings that expose the phosphor slab. The light converting construction further includes a structured overcoat that is disposed directly on at least a portion of the structured layer and a portion of the phosphor slab in the plurality of openings. The structured overcoat has a third index of refraction that is greater than the second index of refraction.

    摘要翻译： 公开了光转换结构。 光转换结构包括：具有第一折射率的荧光体板，用于将第一波长的至少一部分光转换成较长的第二波长的光; 以及设置在所述荧光体板上并且具有小于所述第一折射率的第二折射率的结构化层。 结构化层包括直接设置在荧光体板上的多个结构以及暴露荧光体板的多个开口。 光转换结构还包括直接设置在结构化层的至少一部分上的结构化外涂层和多个开口中的荧光体板的一部分。 结构化外涂层具有大于第二折射率的第三折射率。

    Method of fabricating light extractor
    10.
    发明授权
    Method of fabricating light extractor 有权
    光提取器的制作方法

    公开(公告)号：US08324000B2

    公开(公告)日：2012-12-04

    申请号：US13000604

    申请日：2009-06-03

    申请人： Jun-Ying Zhang ,  Michael A. Haase ,  Terry L. Smith

    发明人： Jun-Ying Zhang ,  Michael A. Haase ,  Terry L. Smith

    IPC分类号： H01L21/00

    CPC分类号： H01L33/44 ,  H01L33/08 ,  H01L33/502 ,  H01L2933/0091

    摘要： Methods of fabricating light extractors are disclosed. The method of fabricating an optical construction for extracting light from a substrate includes the steps of: (a) providing a substrate that has a surface; (b) disposing a plurality of structures on the surface of the substrate, where the plurality of structures form open areas that expose the surface of the substrate; (c) shrinking at least some of the structures; and (d) applying an overcoat to cover the shrunk structures and the surface of the substrate in the open areas.

    摘要翻译： 公开了提取光的方法。 制造用于从衬底提取光的光学结构的方法包括以下步骤：（a）提供具有表面的衬底; （b）在所述基板的表面上设置多个结构，其中所述多个结构形成暴露所述基板的表面的敞开区域; （c）收缩至少一些结构物; 和（d）施加外涂层以覆盖开放区域中的收缩结构和基底表面。