摘要:
A method is provided for creating a barrier layer (217) on a substrate comprising a dielectric layer (203) and a metal interconnect (211). In accordance with the method, the substrate is treated with a first plasma comprising helium, thereby forming a treated substrate. The treated substrate is then exposed to a second plasma selected from the group consisting of oxidizing plasmas and reducing plasmas. Next, a barrier layer is created on the treated substrate.
摘要:
A strained semiconductor layer is achieved by an overlying stressed dielectric layer. The stress in the dielectric layer is increased by a radiation anneal. The radiation anneal can be either by scanning using a laser beam or a flash tool that provides the anneal to the whole dielectric layer simultaneously. The heat is intense, preferably 900-1400 degrees Celcius, but for a very short duration of less than 10 milliseconds; preferably about 1 millisecond or even shorter. The result of the radiation anneal can also be used to activate the source/drain. Thus, this type of radiation anneal can result in a larger change in stress, activation of the source/drain, and still no expansion of the source/drain.
摘要:
A method for making a semiconductor device is provided which includes (a) providing a layer stack comprising a semiconductor layer (211) and a dielectric layer (209) disposed between the substrate and the semiconductor layer, (b) creating a trench (210) which extends through the semiconductor layer and which exposes a portion of the dielectric layer, the trench having a sidewall, (c) creating a spacer structure (221) which comprises a first material and which is adjacent to the sidewall of the trench, and (d) forming a stressor layer (223) which comprises a second material and which is disposed on the bottom of the trench.
摘要:
A process of forming an electronic device can include patterning a semiconductor layer to define an opening. After patterning the semiconductor layer, the opening can have a bottom, and the semiconductor layer can have a sidewall and a surface. The surface is spaced apart from the bottom of the opening. The sidewall can extend from the surface towards the bottom of the opening. The process can also include forming a layer over the semiconductor layer and within the opening, and removing a part of the first layer from within the opening. After removing the part of the layer, a remaining portion of the layer may lie within the opening and adjacent to the bottom and the sidewall, and the remaining portion of the layer may be spaced apart from the surface. In another aspect, the electronic device can include a field isolation region including the first layer.
摘要:
A system for detecting non-linear distortion comprises an error detector and logic. The error detector is configured to estimate signal errors associated with signals communicated across a telecommunication line. The logic is configured to track the signal errors and to detect whether the signals are subject to non-linear distortion based on a history of the signal errors.
摘要:
A system for canceling impulse noise comprises an adaptive impulse canceler and a combiner. The adaptive impulse canceler is configured to receive a common mode component of a received signal and to detect a noise impulse in the common mode component. The impulse canceler is further configured to provide, based on the noise impulse in the common mode component, an impulse noise estimation for a differential mode component of the received signal. The combiner is configured to receive the differential mode component and the impulse noise estimation and to subtract the impulse noise estimation from the differential mode component.
摘要:
A method for making a semiconductor structure (10) includes providing a wafer with a structure (16) having a sidewall, forming a sidewall spacer (22) adjacent to the sidewall, and forming a layer of material (28) over the wafer including over the sidewall spacer and over the structure having the sidewall. The method further includes etching the layer, wherein the etching (i) leaves at least portions of the sidewall spacer exposed and (ii) leaves a portion of the layer located over the structure having a sidewall. The portion of the layer located over the structure having a sidewall is reduced in thickness by the etching. Subsequent to etching the layer, the method includes removing the sidewall spacer.
摘要:
The present invention discloses a hand-held body massager having a transverse housing with a massage region. A massage unit is oriented within the housing for parting a massage effect from the massage region. A pair of elongate arms are each pivotally connected to opposed ends of the housing with the massage region oriented therebetween. Each arm includes a handle to be grasped by a user so that the user may urge the massage region against a target surface of the user's body.
摘要:
An echo canceler for a fractionally spaced telecommunication receiver employs a signal estimator, which generates a fractionally spaced representation of a received information signal that has been subjected to Tomlinson preceding. The output of the signal estimator is differentially combined with fractionally spaced outputs of the echo canceller, so as to effectively remove the contribution of the received information signal from the echo cancellation update operation. As a result, the echo update signal will consist primarily of the residual echo and the noise from the wireline/loop. The error signal can be used at the fractional spacing rate to update all of the echo canceler coefficients, largely without interference from the much larger received information signal. This allows a higher echo canceler gain than that currently incorporated into HDSL2 echo canceler updates.
摘要:
A method of insuring the accuracy of transmitted or stored digital data involves the use of a cyclical redundancy check (CRC) code. The method is particularly useful for ensuring the accuracy of frames transmitted between multi-mode vocoders. The method allows a different CRC code to be used for each mode of a transmitting multi-mode vocoder. A receiving multi-mode vocoder checks the CRC code against the CRC coding formulas of the various modes. If the CRC code is satisfied under any one of the modes, the frame is labeled as “good”. If the CRC code fails under all the modes, the frame is labeled as “bad”. If the bit frame includes bits for indicating the mode of the transmitting multi-mode vocoder, the receiving multi-mode vocoder checks the CRC code against the CRC coding formula for the indicated mode only. If the CRC code passes for the indicated mode, the frame is labeled as “good”, otherwise, the frame is labeled as “bad”.