摘要:
The invention relates to an electronic device which comprises a voltage regulator for providing a regulated output voltage to an electronic circuit and a control stage coupled to control the voltage regulator. The control stage is further configured to detect a request for a change of a system configuration of the electronic circuit coupled to receive the output voltage of the voltage regulator, to determine an activity factor of the electronic circuit for the requested system configuration, to determine a system clock frequency of a system clock of the electronic circuit, to determine a required current drive level of the voltage regulator based on the activity factor, the system clock frequency or the product of both, and to adjust the current drive level of the voltage regulator to the requested current drive level.
摘要:
An electronic device includes a bandgap reference voltage generation stage. The bandgap reference voltage generation stage comprises a device with a PN-junction, a current source feeding a first current during a first period of time and a second higher current during a second period of time through the PN-junction. The bandgap reference voltage is generated from a combination of a first voltage drop across the PN-junction during the first period of time and a second voltage drop across the PN-junction during the second period of time. This bandgap reference voltage is formed using switched capacitors.
摘要:
An electronic device includes a bandgap reference voltage generation stage. The bandgap reference voltage generation stage comprises a device with a PN-junction, a current source feeding a first current during a first period of time and a second higher current during a second period of time through the PN-junction. The bandgap reference voltage is generated from a combination of a first voltage drop across the PN-junction during the first period of time and a second voltage drop across the PN-junction during the second period of time. This bandgap reference voltage is formed using switched capacitors.
摘要:
The invention relates to an arrangement comprising a logarithmizing unit and a subtracting unit, wherein the subtracting unit has an output at which a voltage value linearly proportional to the temperature can be tapped off.
摘要:
The invention relates to a measuring arrangement, a semiconductor arrangement and a method for operating a reference source, wherein at least one semiconductor component and a voltage source are connected to a measuring unit and the measuring unit provides a measured value that is proportional to the number of defects.
摘要:
One aspect of the invention relates to a rectifier circuit for providing a rectified voltage, with a first AC voltage terminal to which an AC voltage can be applied, with a first DC voltage terminal to which a DC voltage can be provided, and with a control switching element between the first AC voltage terminal and the first DC voltage terminal. The control switching element only couples the first AC voltage terminal to the first DC voltage terminal if the electrical potential at the first AC voltage terminal has a predeterminable polarity compared with a reference potential and if the amount of the electrical potential at the first DC voltage terminal is less than or equal to the amount of the electrical potential at the first AC voltage terminal.
摘要:
Noise-reducing transistor arrangement having first and second field effect transistors (FETs) having source terminals coupled together, drain terminals coupled together, and control terminals for application of a first or second signal. A clock generator unit is configured to provide the first and second signals alternately to the FETs with an alternating frequency which is at least as great as the cut-off frequency of the noise characteristic of the FETs, or with a reciprocal alternating frequency which is less than a mean lifetime of an occupation state of a defect in the boundary region between channel region and gate insulating layer of the FETs. The first signal is applied to the control terminal of the first FET and, simultaneously, the second signal to the control terminal of the second FET. The second signal is applied to the control terminal of the first FET and, simultaneously, the first signal to the control terminal of the second FET.
摘要:
The invention relates to a measuring arrangement, a semiconductor arrangement and a method for operating a reference source, wherein at least one semiconductor component and a voltage source are connected to a measuring unit and the measuring unit provides a measured value that is proportional to the number of defects.
摘要:
An integrated circuit arrangement contains an insulating region, which is part of a planar insulating layer, and a capacitor which contains: near and far electrode regions near and remote from the insulating region and a dielectric region. The capacitor and an active component are on the same side of the insulating layer, and the near electrode region and an active region of the component are planar and parallel to the insulating layer. The near electrode region is monocrystalline and contains multiple webs. Alternately, a FET is present in which: a channel region is the active region, the FET contains a web with opposing control electrodes connected by a connecting region that is isolated from the channel region by a thick insulating region. The thick insulating region is thicker than control electrode insulation regions. The control electrodes contain the same material as the far electrode region.
摘要:
Noise-reducing transistor arrangement having first and second field effect transistors (FETs) having source terminals coupled together, drain terminals coupled together, and control terminals for application of a first or second signal. A clock generator unit is configured to provide the first and second signals alternately to the FETs with an alternating frequency which is at least as great as the cut-off frequency of the noise characteristic of the FETs, or with a reciprocal alternating frequency which is less than a mean lifetime of an occupation state of a defect in the boundary region between channel region and gate insulating layer of the FETs. The first signal is applied to the control terminal of the first FET and, simultaneously, the second signal to the control terminal of the second FET. The second signal is applied to the control terminal of the first FET and, simultaneously, the first signal to the control terminal of the second FET.