摘要:
A semiconductor laser package including a laser chip mounted to an uppermost surface of a leadframe, and a molded structure at least partially encapsulating the laser chip. The laser chip composed of a vertical cavity surface emitting laser and an optional photodetector. The vertical cavity surface emitting laser generating an emission along a path. The molded structure including an optical element positioned a specific distance from an emission aperture of the vertical cavity surface emitting laser. The laser chip and the optical element mounted in precise z-axis alignment from the emission aperture of the vertical cavity surface emitting laser utilizing the uppermost surface of the leadframe as a dimensional reference point.
摘要:
A semiconductor laser package including a mounting structure at least partially encapsulating a vertical cavity surface emitting laser and a photodetector. The vertical cavity surface emitting laser generating an emission along a path. The photodetector optically positioned and/or integrally formed with the vertical cavity surface emitting laser to receive a portion of the emission. An optical element is optionally positioned in the path, mounted on the mounting structure utilizing a snap-fit connection, a threaded or adhesive mounting. The mounting structure and optical element are fabricated to allow for proper z-axis alignment of the optical element relative to the laser emission aperture.
摘要:
A portable electronic device including a display detachably mounted to a power source. The display including a virtual image display apparatus. The power source including a detachably mounted battery. A communication interface is provided between the display apparatus and the portable electronic device for permitting data exchange between the display apparatus and the portable electronic device. The communication interface provided can be either a standard electrical interface such as an electrical connector or a solid form factor design including cooperating contact areas or a wireless interface such as an infra red optical link or a radio frequency link.
摘要:
A light source for use in an infra-red data association data link device including a vertical cavity surface emitting laser for emitting a beam of light along a path, and a diverger positioned in the path for diverging the emitted beam of light.
摘要:
A long wavelength VCSEL with a photodetector, wherein the VCSEL includes a first and second stack of DBRs disposed on a first surface of a first substrate element, having an active region sandwiched therebetween, and a PIN photodetector including a first doped region disposed on a second substrate element, a undoped region disposed on the first doped region, and a second doped region disposed on the undoped region. The PIN photodetector is mounted to an opposed surface of the first substrate element, thereby monitoring a back VCSEL emission. The device is fabricated to allow for automatic power control (APC) of the VCSEL.
摘要:
A switchable lens includes first and second optically transparent substrates, a first electrically conductive, optically transparent contact film positioned on a surface of the first optically transparent substrate, a second electrically conductive, optically transparent contact film positioned on a surface of the second optically transparent substrate, and phase modulating material sandwiched between the first and second electrically conductive, optically transparent contact films. The phase modulating material has a lens function stored therein which is temporarily erasable by a potential applied between the first and second electrically conductive, optically transparent contact films, the phase modulating material thereby being capable of modulating light passing therethrough.
摘要:
A vertical cavity surface emitting laser for emitting visible light, including a first mirror stack having a first portion of a first epitaxially grown material system and a second portion of a second epitaxially grown material system, an active region disposed on the first mirror stack, and a second mirror stack disposed on the active region.
摘要:
An integrated electro-optical package including a dual sided opto-electronic device, composed of a substrate with an array of light emitting devices (LEDs) formed on a first major surface thereof, and at least one vertical cavity surface emitting laser formed on an opposed second major surface of the substrate. A mounting structure formed so as to allow for the mounting of the dual sided opto-electronic device on the interior major surfaces, and further having electrical conductors for cooperating with the LEDs and VCSEL of the opto-electronic device. A driver substrate having electrical connections for interfacing with the mounting structure and the dual sided opto-electronic device. A plurality of driver circuits connected to the mounting structure and dual sided opto-electronic device through connection pads formed on the driver substrate.
摘要:
A longwavelength vertical cavity surface emitting laser (VCSEL) for use in optical telecommunications and method of fabrication that includes the fabrication of an active VCSEL structure on a supporting substrate and the fabrication of a highly reflective DBR mirror structure on a silicon substrate. The DBR mirror structure includes alternating layers of a silicon oxide material and a silicon material fabricated utilizing epitaxially growth techniques and/or wafer bonding using SOI wafer fusion technology. During fabrication of the final VCSEL device, the Si/SiO.sub.2 DBR mirror structure is wafer bonded to the active VCSEL structure. The active VCSEL structure supporting substrate is selectively removed, to enable positioning of a second DBR mirror stack. The final VCSEL device characterized by emitting infra-red light.
摘要:
A VCSEL (113) having a first and a second stack of distributed Bragg reflectors (120, 116) and an active region (118) is formed. Conductive layers (108 and 109) having an opening is formed on the second stack of distributed Bragg reflectors (116). A first region (104), a second region (106), and a third region (108) are formed in the opening of the conductive layer (108), thereby providing a contact to both the second stack of distributed Bragg reflectors (116) and to the first region (104). An insulative layer (220) is disposed on the substrate (124), thereby insulating the second region (106) from the conductive layer (108). A conductive layer (134) having second opening disposed substantially overlying the first opening, thereby electrically coupling the third region (108) to the conductive layer (134) with the second opening allowing a light (121) to pass.