摘要:
An apparatus and method for producing a filament harness which comprises feeding a plurality of strands in a downstream direction onto a support which receives the strands. There is a head which contacts the strands and a control means for causing relative motion between the support and the head to form the plurality of wires into a predetermined, desired pattern. In addition, the product produced by the method is also disclosed.
摘要:
The semiconductor integrated circuit includes: a plurality of macro cells; and a serial-parallel conversion circuit for converting a serial signal inputted from outside to generate parallel selection control signals during testing, or an A/D conversion circuit for converting an analog signal inputted from outside to generate digital selection control signals during testing. One or more among, the plurality of macro cells are selected based on the selection control signals and brought to a test operation state.
摘要:
In a memory cell array, source lines are provided so that each of the source lines is connected to ones of memory cells which belong to adjacent two rows and a plurality of source bias control circuits for supplying a source bias potential which is higher than a ground potential and lower than a power supply potential are provided so as to correspond to the source lines, respectively. In an active period, the source bias control circuits perform potential control so that one or more of the source lines selected by row predecoders which are not connected to one of the memory cells which is to be read out are controlled to be in a state where the source bias potential is supplied.
摘要:
A semiconductor memory device is provided comprising precharge circuits corresponding to global data line pairs, but not a precharge circuit corresponding to a local data line pair. In a command waiting state, data line selection switches are controlled to be in a connected state, so that the local data line pair and the global data line pairs are precharged all together while being connected to each other. In a command executing state, one of the data line selection switches, the one being not required for command execution, is in an open state. Similarly, a semiconductor memory device comprising only a precharge circuit corresponding to a local data line pair can be provided.
摘要:
An improved method of operating an apparatus to cut sheet material workpieces eliminates the inadvertent dropping of a relatively small scrap or remainder portion of a workpiece into a clearance space between a pair of cutter blades and a discharge conveyor. Thus, a relatively large sheet metal workpiece is gripped by a holder which moves the workpiece relative to a pair of blades. The blades are moved relative to each other to cut the workpiece to form a product having a desired configuration. The product is dropped onto a discharge conveyor. In order to prevent a relatively small scrap piece remaining in the holder from being dropped into a space between the discharge conveyor and the blades, the holder is extended through the space between the blades to a location over the discharge conveyor and is opened to drop the scrap or remainder portion of the workpiece onto the discharge conveyor.
摘要:
A sheet metal workpiece is held by holders as the workpiece is cut and moved relative to a device such as a shearing machine or punch press. An improved apparatus and method is provided to precisely position the sheet metal workpiece relative to the holders. This apparatus includes a first gripper assembly which is disposed at an opening in a support structure for the sheet metal workpiece. The first gripper assembly moves the workpiece to position it along a first axis. A second gripper assembly is disposed at another opening in the support structure and moves the workpiece to position it along a second axis which extends transversely to the first axis. The two gripper assemblies can be moved between extended positions projecting upwardly from the support structure and retracted positions in which the gripper assemblies are disposed within the support structure.
摘要:
A technique is provided for achieving reduction in size of an electronic device with a power amplifier circuit, while enhancing the performance of the electronic device. An RF power module for a mobile communication device includes first and second semiconductor chips, a passive component, and first and second integrated passive components, which are mounted over a wiring board. In the first semiconductor chip, MISFET elements constituting power amplifier circuits for the GSM 900 and for the DCS 1800 are formed, and a control circuit is also formed. In the first integrated passive component, a low pass filter circuit for the GSM 900 is formed, and in the second integrated passive component, a low pass filter circuit for the DCS 1800 is formed. In the second semiconductor chip, antenna switch circuits for the GSM 900 and DCS 1800 are formed. Over the upper surface of the wiring board, the second semiconductor chip is disposed next to the first semiconductor chip between the integrated passive components.
摘要:
In a semiconductor storage device, such as a dynamic random access memory (DRAM), in which dynamic data is amplified and read on a bit line, a data line sense amplifier/write buffer connected to a data line of a memory array and a data line sense amplifier control signal generating logic circuit connected to a dummy data line of a dummy memory array are provided. A sense amplifier is activated in accordance with an output signal of the logic circuit.
摘要:
A semiconductor memory device is provided comprising precharge circuits corresponding to global data line pairs, but not a precharge circuit corresponding to a local data line pair. In a command waiting state, data line selection switches are controlled to be in a connected state, so that the local data line pair and the global data line pairs are precharged all together while being connected to each other. In a command executing state, one of the data line selection switches, the one being not required for command execution, is in an open state. Similarly, a semiconductor memory device comprising only a precharge circuit corresponding to a local data line pair can be provided.
摘要:
A semiconductor memory device 1 comprises precharge circuits 31, 32 corresponding to global data line pairs DL0/NDL0, DL1/NDL1, but not a precharge circuit corresponding to a local data line pair LDL/NLDL. In a command waiting state, data line selection switches 21, 22 are controlled to be in a connected state, so that the local data line pair and the global data line pairs are precharged all together while being connected to each other. In a command executing state, one of the data line selection switches 21, 22, the one being not required for command execution, is in an open state. Similarly, a semiconductor memory device comprising only a precharge circuit corresponding to a local data line pair can be provided.