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公开(公告)号：US11594611B2
公开(公告)日：2023-02-28
申请号：US17180270
申请日：2021-02-19
IPC分类号： H01L21/02 , H01L29/51 , H01L21/28 , H01L29/423 , H01L29/78 , H01L29/66 , H01L45/00 , G11C14/00 , H01L27/108 , H01L27/1159 , H01L29/08 , H01L29/10 , H01L29/40 , H01L27/11585
摘要： Some embodiments include a semiconductor construction having a gate extending into a semiconductor base. Conductively-doped source and drain regions are within the base adjacent the gate. A gate dielectric has a first segment between the source region and the gate, a second segment between the drain region and the gate, and a third segment between the first and second segments. At least a portion of the gate dielectric comprises ferroelectric material. In some embodiments the ferroelectric material is within each of the first, second and third segments. In some embodiments, the ferroelectric material is within the first segment or the third segment. In some embodiments, a transistor has a gate, a source region and a drain region; and has a channel region between the source and drain regions. The transistor has a gate dielectric which contains ferroelectric material between the source region and the gate.
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公开(公告)号：US20210175340A1
公开(公告)日：2021-06-10
申请号：US17180270
申请日：2021-02-19
IPC分类号： H01L29/51 , H01L29/78 , H01L27/108 , H01L29/08 , H01L29/40 , H01L29/66 , H01L21/28 , G11C14/00 , H01L29/423 , H01L45/00 , H01L29/10 , H01L27/1159 , H01L27/11585
摘要： Some embodiments include a semiconductor construction having a gate extending into a semiconductor base. Conductively-doped source and drain regions are within the base adjacent the gate. A gate dielectric has a first segment between the source region and the gate, a second segment between the drain region and the gate, and a third segment between the first and second segments. At least a portion of the gate dielectric comprises ferroelectric material. In some embodiments the ferroelectric material is within each of the first, second and third segments. In some embodiments, the ferroelectric material is within the first segment or the third segment. In some embodiments, a transistor has a gate, a source region and a drain region; and has a channel region between the source and drain regions. The transistor has a gate dielectric which contains ferroelectric material between the source region and the gate.
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公开(公告)号：US20160133717A1
公开(公告)日：2016-05-12
申请号：US14991792
申请日：2016-01-08
IPC分类号： H01L29/51 , H01L29/08 , G11C14/00 , H01L27/108 , H01L27/115 , H01L29/423 , H01L29/78
CPC分类号： H01L29/516 , G11C14/0027 , H01L21/28291 , H01L27/10823 , H01L27/10876 , H01L27/11585 , H01L27/1159 , H01L29/0847 , H01L29/1037 , H01L29/408 , H01L29/4236 , H01L29/42364 , H01L29/42368 , H01L29/511 , H01L29/513 , H01L29/518 , H01L29/6684 , H01L29/7827 , H01L29/78391 , H01L29/784 , H01L45/1206 , H01L45/1233 , H01L45/14
摘要： Some embodiments include a semiconductor construction having a gate extending into a semiconductor base. Conductively-doped source and drain regions are within the base adjacent the gate. A gate dielectric has a first segment between the source region and the gate, a second segment between the drain region and the gate, and a third segment between the first and second segments. At least a portion of the gate dielectric comprises ferroelectric material. In some embodiments the ferroelectric material is within each of the first, second and third segments. In some embodiments, the ferroelectric material is within the first segment or the third segment. In some embodiments, a transistor has a gate, a source region and a drain region; and has a channel region between the source and drain regions. The transistor has a gate dielectric which contains ferroelectric material between the source region and the gate.
摘要翻译： 一些实施例包括具有延伸到半导体基底中的栅极的半导体结构。 导电掺杂的源极和漏极区域在与栅极相邻的基极内。 栅极电介质在源极区域和栅极之间具有第一区段，在漏极区域和栅极之间的第二区段以及第一和第二区段之间的第三区段。 栅电介质的至少一部分包括铁电材料。 在一些实施例中，铁电材料在第一，第二和第三段内。 在一些实施例中，铁电材料在第一段或第三段内。 在一些实施例中，晶体管具有栅极，源极区和漏极区; 并且在源区和漏区之间具有沟道区。 晶体管具有在源极区域和栅极之间包含铁电材料的栅极电介质。
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公开(公告)号：US20180122917A1
公开(公告)日：2018-05-03
申请号：US15859122
申请日：2017-12-29
IPC分类号： H01L29/51 , H01L29/78 , H01L29/40 , H01L29/423 , H01L29/10 , H01L29/08 , H01L27/108
CPC分类号： H01L29/516 , G11C14/0027 , H01L27/10823 , H01L27/10876 , H01L27/11585 , H01L27/1159 , H01L29/0847 , H01L29/1037 , H01L29/40111 , H01L29/408 , H01L29/4236 , H01L29/42364 , H01L29/42368 , H01L29/511 , H01L29/513 , H01L29/518 , H01L29/6684 , H01L29/78391 , H01L45/1206 , H01L45/1233 , H01L45/14
摘要： Some embodiments include a semiconductor construction having a gate extending into a semiconductor base. Conductively-doped source and drain regions are within the base adjacent the gate. A gate dielectric has a first segment between the source region and the gate, a second segment between the drain region and the gate, and a third segment between the first and second segments. At least a portion of the gate dielectric comprises ferroelectric material. In some embodiments the ferroelectric material is within each of the first, second and third segments. In some embodiments, the ferroelectric material is within the first segment or the third segment. In some embodiments, a transistor has a gate, a source region and a drain region; and has a channel region between the source and drain regions. The transistor has a gate dielectric which contains ferroelectric material between the source region and the gate.
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公开(公告)号：US20170133478A1
公开(公告)日：2017-05-11
申请号：US15411886
申请日：2017-01-20
IPC分类号： H01L29/51 , H01L29/10 , H01L29/423 , H01L27/1159 , H01L29/40 , H01L29/78 , H01L29/08
CPC分类号： H01L29/516 , G11C14/0027 , H01L21/28291 , H01L27/10823 , H01L27/10876 , H01L27/11585 , H01L27/1159 , H01L29/0847 , H01L29/1037 , H01L29/408 , H01L29/4236 , H01L29/42364 , H01L29/42368 , H01L29/511 , H01L29/513 , H01L29/518 , H01L29/6684 , H01L29/7827 , H01L29/78391 , H01L29/784 , H01L45/1206 , H01L45/1233 , H01L45/14
摘要： Some embodiments include a semiconductor construction having a gate extending into a semiconductor base. Conductively-doped source and drain regions are within the base adjacent the gate. A gate dielectric has a first segment between the source region and the gate, a second segment between the drain region and the gate, and a third segment between the first and second segments. At least a portion of the gate dielectric comprises ferroelectric material. In some embodiments the ferroelectric material is within each of the first, second and third segments. In some embodiments, the ferroelectric material is within the first segment or the third segment. In some embodiments, a transistor has a gate, a source region and a drain region; and has a channel region between the source and drain regions. The transistor has a gate dielectric which contains ferroelectric material between the source region and the gate.
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6.发明授权公开(公告)号：US10943986B2
公开(公告)日：2021-03-09
申请号：US15859122
申请日：2017-12-29
IPC分类号： H01L29/66 , H01L29/51 , H01L21/28 , H01L29/423 , H01L29/78 , H01L45/00 , G11C14/00 , H01L27/108 , H01L27/1159 , H01L29/08 , H01L29/10 , H01L29/40 , H01L27/11585
摘要： Some embodiments include a semiconductor construction having a gate extending into a semiconductor base. Conductively-doped source and drain regions are within the base adjacent the gate. A gate dielectric has a first segment between the source region and the gate, a second segment between the drain region and the gate, and a third segment between the first and second segments. At least a portion of the gate dielectric comprises ferroelectric material. In some embodiments the ferroelectric material is within each of the first, second and third segments. In some embodiments, the ferroelectric material is within the first segment or the third segment. In some embodiments, a transistor has a gate, a source region and a drain region; and has a channel region between the source and drain regions. The transistor has a gate dielectric which contains ferroelectric material between the source region and the gate.
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公开(公告)号：US09882016B2
公开(公告)日：2018-01-30
申请号：US15411886
申请日：2017-01-20
IPC分类号： H01L29/51 , H01L29/08 , H01L29/10 , H01L29/40 , H01L29/423 , H01L29/78 , H01L27/1159 , H01L27/108
CPC分类号： H01L29/516 , G11C14/0027 , H01L21/28291 , H01L27/10823 , H01L27/10876 , H01L27/11585 , H01L27/1159 , H01L29/0847 , H01L29/1037 , H01L29/408 , H01L29/4236 , H01L29/42364 , H01L29/42368 , H01L29/511 , H01L29/513 , H01L29/518 , H01L29/6684 , H01L29/7827 , H01L29/78391 , H01L29/784 , H01L45/1206 , H01L45/1233 , H01L45/14
摘要： Some embodiments include a semiconductor construction having a gate extending into a semiconductor base. Conductively-doped source and drain regions are within the base adjacent the gate. A gate dielectric has a first segment between the source region and the gate, a second segment between the drain region and the gate, and a third segment between the first and second segments. At least a portion of the gate dielectric comprises ferroelectric material. In some embodiments the ferroelectric material is within each of the first, second and third segments. In some embodiments, the ferroelectric material is within the first segment or the third segment. In some embodiments, a transistor has a gate, a source region and a drain region; and has a channel region between the source and drain regions. The transistor has a gate dielectric which contains ferroelectric material between the source region and the gate.
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公开(公告)号：US09590066B2
公开(公告)日：2017-03-07
申请号：US14991792
申请日：2016-01-08
IPC分类号： H01L29/51 , H01L29/423 , H01L27/108 , H01L27/115 , H01L31/062 , H01L29/78 , H01L21/28 , H01L45/00 , H01L29/66 , G11C14/00 , H01L29/08
CPC分类号： H01L29/516 , G11C14/0027 , H01L21/28291 , H01L27/10823 , H01L27/10876 , H01L27/11585 , H01L27/1159 , H01L29/0847 , H01L29/1037 , H01L29/408 , H01L29/4236 , H01L29/42364 , H01L29/42368 , H01L29/511 , H01L29/513 , H01L29/518 , H01L29/6684 , H01L29/7827 , H01L29/78391 , H01L29/784 , H01L45/1206 , H01L45/1233 , H01L45/14
摘要： Some embodiments include a semiconductor construction having a gate extending into a semiconductor base. Conductively-doped source and drain regions are within the base adjacent the gate. A gate dielectric has a first segment between the source region and the gate, a second segment between the drain region and the gate, and a third segment between the first and second segments. At least a portion of the gate dielectric comprises ferroelectric material. In some embodiments the ferroelectric material is within each of the first, second and third segments. In some embodiments, the ferroelectric material is within the first segment or the third segment. In some embodiments, a transistor has a gate, a source region and a drain region; and has a channel region between the source and drain regions. The transistor has a gate dielectric which contains ferroelectric material between the source region and the gate.
摘要翻译： 一些实施例包括具有延伸到半导体基底中的栅极的半导体结构。 导电掺杂的源极和漏极区域在与栅极相邻的基极内。 栅极电介质在源极区域和栅极之间具有第一区段，在漏极区域和栅极之间的第二区段以及第一和第二区段之间的第三区段。 栅电介质的至少一部分包括铁电材料。 在一些实施例中，铁电材料在第一，第二和第三段内。 在一些实施例中，铁电材料在第一段或第三段内。 在一些实施例中，晶体管具有栅极，源极区和漏极区; 并且在源区和漏区之间具有沟道区。 晶体管具有在源极区域和栅极之间包含铁电材料的栅极电介质。
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