公开(公告)号：US10522461B2

公开(公告)日：2019-12-31

申请号：US16042255

申请日：2018-07-23

Applicant: Micron Technology, Inc.

Inventor： Adam L. Olson ,  Kaveri Jain ,  Lijing Gou ,  William R. Brown ,  Ho Seop Eom ,  Xue (Gloria) Chen ,  Anton J. deVilliers

IPC: H01L21/31 ,  H01L23/528 ,  H01L21/467 ,  H01L23/52 ,  H01L21/768 ,  H01L21/027 ,  H01L21/02 ,  H01L21/308

Abstract: A method of forming a semiconductor structure comprises forming pools of acidic or basic material in a substrate structure. A resist is formed over the pools of acidic or basic material and the substrate structure. The acidic or basic material is diffused from the pools into portions of the resist proximal to the pools more than into portions of the resist distal to the pools. Then, the resist is exposed to a developer to remove a greater amount of the resist portions proximal to the pools compared to the resist portions distal to the pools to form openings in the resist. The openings have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure. The method may further comprise forming features in the openings of the resist. The features have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure.

公开(公告)号：US10032719B2

公开(公告)日：2018-07-24

申请号：US15606312

申请日：2017-05-26

Applicant: Micron Technology, Inc.

Inventor： Adam L. Olson ,  Kaveri Jain ,  Lijing Gou ,  William R. Brown ,  Ho Seop Eom ,  Xue (Gloria) Chen ,  Anton J. deVilliers

IPC: H01L21/31 ,  H01L23/528 ,  H01L21/02 ,  H01L21/027 ,  H01L23/52 ,  H01L21/768 ,  H01L21/308 ,  H01L21/467

Abstract: A method of forming a semiconductor structure comprises forming pools of acidic or basic material in a substrate structure. A resist is formed over the pools of acidic or basic material and the substrate structure. The acidic or basic material is diffused from the pools into portions of the resist proximal to the pools more than into portions of the resist distal to the pools. Then, the resist is exposed to a developer to remove a greater amount of the resist portions proximal to the pools compared to the resist portions distal to the pools to form openings in the resist. The openings have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure. The method may further comprise forming features in the openings of the resist. The features have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure.

公开(公告)号：US09666531B2

公开(公告)日：2017-05-30

申请号：US15192060

申请日：2016-06-24

Applicant: Micron Technology, Inc.

Inventor： Adam L. Olson ,  Kaveri Jain ,  Lijing Gou ,  William R. Brown ,  Ho Seop Eom ,  Xue Chen ,  Anton J. deVilliers

IPC: H01L21/467 ,  H01L23/528 ,  H01L23/52 ,  H01L21/768 ,  H01L21/027 ,  H01L21/02 ,  H01L21/308

CPC classification number: H01L23/528 ,  H01L21/0226 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/441 ,  H01L21/467 ,  H01L21/76804 ,  H01L21/76816 ,  H01L21/76877 ,  H01L21/76885 ,  H01L23/52 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of forming a semiconductor structure comprises forming pools of acidic or basic material in a substrate structure. A resist is formed over the pools of acidic or basic material and the substrate structure. The acidic or basic material is diffused from the pools into portions of the resist proximal to the pools more than into portions of the resist distal to the pools. Then, the resist is exposed to a developer to remove a greater amount of the resist portions proximal to the pools compared to the resist portions distal to the pools to form openings in the resist. The openings have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure. The method may further comprise forming features in the openings of the resist. The features have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure.

公开(公告)号：US08815752B2

公开(公告)日：2014-08-26

申请号：US13687419

申请日：2012-11-28

Applicant: Micron Technology, Inc.

Inventor： Adam L. Olson ,  Kaveri Jain ,  Lijing Gou ,  William R. Brown ,  Ho Seop Eom ,  Xue Chen ,  Anton J. deVilliers

IPC: H01L21/31 ,  H01L21/469

CPC classification number: H01L23/528 ,  H01L21/0226 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/441 ,  H01L21/467 ,  H01L21/76804 ,  H01L21/76816 ,  H01L21/76877 ,  H01L21/76885 ,  H01L23/52 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods of forming features are disclosed. One method comprises forming a resist over a pool of acidic or basic material on a substrate structure, selectively exposing the resist to an energy source to form exposed resist portions and non-exposed resist portions, and diffusing acid or base of the acidic or basic material from the pool into proximal portions of the resist. Another method comprises forming a plurality of recesses in a substrate structure. The plurality of recesses are filled with a pool material comprising acid or base. A resist is formed over the pool material and the substrate structure and acid or base is diffused into adjacent portions of the resist. The resist is patterned to form openings in the resist. The openings comprise wider portions distal to the substrate structure and narrower portions proximal to the substrate structure. Additional methods and semiconductor device structures including the features are disclosed.

Abstract translation: 公开了形成特征的方法。 一种方法包括在衬底结构上的酸性或碱性材料池上形成抗蚀剂，选择性地将抗蚀剂暴露于能量源以形成暴露的抗蚀剂部分和未曝光的抗蚀剂部分，以及将酸性或碱性材料的酸或碱扩散 从池中到抗蚀剂的近端部分。 另一种方法包括在衬底结构中形成多个凹陷。 多个凹部填充有包含酸或碱的池材料。 在池材料上形成抗蚀剂，并且衬底结构和酸或碱扩散到抗蚀剂的相邻部分。 抗蚀剂被图案化以在抗蚀剂中形成开口。 开口包括远离衬底结构的较宽部分和靠近衬底结构的较窄部分。 公开了包括这些特征的附加方法和半导体器件结构。

公开(公告)号：US20140127909A1

公开(公告)日：2014-05-08

申请号：US14133962

申请日：2013-12-19

Applicant: Micron Technology, Inc.

Inventor： Vishal Sipani ,  Anton J. deVilliers

IPC: H01L21/311

CPC classification number: H01L21/31144 ,  H01L21/0337 ,  H01L21/0338

Abstract: A method of forming a pattern on a substrate includes forming longitudinally elongated first lines and first sidewall spacers longitudinally along opposite sides of the first lines elevationally over an underlying substrate. Longitudinally elongated second lines and second sidewall spacers are formed longitudinally along opposite sides of the second lines. The second lines and the second sidewall spacers cross elevationally over the first lines and the first sidewall spacers. The second sidewall spacers are removed from crossing over the first lines. The first and second lines are removed in forming a pattern comprising portions of the first and second sidewall spacers over the underlying substrate. Other methods are disclosed.

Abstract translation: 在衬底上形成图案的方法包括沿纵向延伸的第一线和第一侧壁隔离件纵向地沿着第一线的相对侧纵向地形成在下面的衬底上。 纵向细长的第二线和第二侧壁间隔物沿着第二线的相对侧纵向地形成。 第二线和第二侧壁间隔物跨越第一线和第一侧壁间隔物横向交叉。 第二侧壁隔离物从第一线上的交叉排出。 第一和第二线在形成包括第一和第二侧壁隔板的部分的图案的基底上移除。 公开了其他方法。

公开(公告)号：US09741580B2

公开(公告)日：2017-08-22

申请号：US14674476

申请日：2015-03-31

Applicant: Micron Technology, Inc.

Inventor： Vishal Sipani ,  Anton J. deVilliers ,  William R. Brown ,  Shane J. Trapp ,  Ranjan Khurana ,  Kevin R. Shea

IPC: H01L29/76 ,  H01L21/308 ,  H01L21/027 ,  H01L21/033 ,  H01L21/311 ,  H01L21/22 ,  H01L21/266 ,  H01L21/32 ,  H01L21/768 ,  H01L21/02

CPC classification number: H01L21/308 ,  H01L21/02642 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/22 ,  H01L21/266 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32 ,  H01L21/76816

Abstract: A method of forming a pattern on a substrate comprises forming spaced, upwardly-open, cylinder-like structures projecting longitudinally outward of a base. Sidewall lining is formed over inner and over outer sidewalls of the cylinder-like structures, and that forms interstitial spaces laterally outward of the cylinder-like structures. The interstitial spaces are individually surrounded by longitudinally-contacting sidewall linings that are over outer sidewalls of four of the cylinder-like structures. Other embodiments are disclosed, including structure independent of method.

公开(公告)号：US09583381B2

公开(公告)日：2017-02-28

申请号：US13918065

申请日：2013-06-14

Applicant: Micron Technology, Inc.

Inventor： Ranjan Khurana ,  Michael Hyatt ,  Scott L. Light ,  Kevin J. Torek ,  Anton J. deVilliers

IPC: H01L21/311 ,  H01L21/312 ,  H01L21/32 ,  G03F7/26 ,  H01L21/768 ,  H01L21/027 ,  H01L21/033 ,  G03F7/095 ,  G03F7/00 ,  H01L49/02

CPC classification number: H01L21/76816 ,  G03F7/0035 ,  G03F7/095 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144 ,  H01L28/90

Abstract: Methods of forming semiconductor devices and features in semiconductor device structures include conducting an anti-spacer process to remove portions of a first mask material to form first openings extending in a first direction. Another anti-spacer process is conducted to remove portions of the first mask material to form second openings extending in a second direction at an angle to the first direction. Portions of a second mask material underlying the first mask material at intersections of the first openings and second openings are removed to form holes in the second mask material and to expose a substrate underlying the second mask material.

Abstract translation: 在半导体器件结构中形成半导体器件和特征的方法包括进行防间隔工艺以去除第一掩模材料的部分以形成沿第一方向延伸的第一开口。 进行另一个防间隔处理以去除第一掩模材料的部分，以形成沿与第一方向成角度的第二方向延伸的第二开口。 去除在第一开口和第二开口的交叉点处的第一掩模材料下面的第二掩模材料的部分，以在第二掩模材料中形成孔并暴露第二掩模材料下面的衬底。

公开(公告)号：US09142504B2

公开(公告)日：2015-09-22

申请号：US14457658

申请日：2014-08-12

Applicant: Micron Technology, Inc.

Inventor： Adam L. Olson ,  Kaveri Jain ,  Lijing Gou ,  William R. Brown ,  Ho Seop Eom ,  Xue Chen ,  Anton J. deVilliers

IPC: H01L29/06 ,  H01L23/52 ,  H01L21/467 ,  H01L21/768 ,  H01L21/027

CPC classification number: H01L23/528 ,  H01L21/0226 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/441 ,  H01L21/467 ,  H01L21/76804 ,  H01L21/76816 ,  H01L21/76877 ,  H01L21/76885 ,  H01L23/52 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods of forming features are disclosed. One method comprises forming a resist over a pool of acidic or basic material on a substrate structure, selectively exposing the resist to an energy source to form exposed resist portions and non-exposed resist portions, and diffusing acid or base of the acidic or basic material from the pool into proximal portions of the resist. Another method comprises forming a plurality of recesses in a substrate structure. The plurality of recesses are filled with a pool material comprising acid or base. A resist is formed over the pool material and the substrate structure and acid or base is diffused into adjacent portions of the resist. The resist is patterned to form openings in the resist. The openings comprise wider portions distal to the substrate structure and narrower portions proximal to the substrate structure. Additional methods and semiconductor device structures including the features are disclosed.

Abstract translation: 公开了形成特征的方法。 一种方法包括在衬底结构上的酸性或碱性材料池上形成抗蚀剂，选择性地将抗蚀剂暴露于能量源以形成暴露的抗蚀剂部分和未曝光的抗蚀剂部分，以及将酸性或碱性材料的酸或碱扩散 从池中到抗蚀剂的近端部分。 另一种方法包括在衬底结构中形成多个凹陷。 多个凹部填充有包含酸或碱的池材料。 在池材料上形成抗蚀剂，并且衬底结构和酸或碱扩散到抗蚀剂的相邻部分。 抗蚀剂被图案化以在抗蚀剂中形成开口。 开口包括远离衬底结构的较宽部分和靠近衬底结构的较窄部分。 公开了包括这些特征的附加方法和半导体器件结构。

公开(公告)号：US09140977B2

公开(公告)日：2015-09-22

申请号：US13892711

申请日：2013-05-13

Applicant: Micron Technology, Inc.

Inventor： Yuan He ,  Kaveri Jain ,  Lijing Gou ,  Zishu Zhang ,  Anton J. deVilliers ,  Michael Hyatt ,  Jianming Zhou ,  Scott L. Light ,  Dan B. Millward

IPC: G03F1/36 ,  G03F1/38 ,  G03F1/54

CPC classification number: G03F1/38 ,  G03F1/50 ,  G03F1/54 ,  Y10T29/49002

Abstract: An imaging device comprising a first region and a second region. Imaging features in the first region and assist features in the second region are substantially the same size as one another and are formed substantially on pitch. Methods of forming an imaging device and methods of forming a semiconductor device structure are also disclosed.

Abstract translation: 一种成像装置，包括第一区域和第二区域。 第一区域中的成像特征和第二区域中的辅助特征基本上彼此相同，并且基本上在间距上形成。 还公开了形成成像装置的方法和形成半导体器件结构的方法。

公开(公告)号：US20150206760A1

公开(公告)日：2015-07-23

申请号：US14674476

申请日：2015-03-31

Applicant: Micron Technology, Inc.

Inventor： Vishal Sipani ,  Anton J. deVilliers ,  William R. Brown ,  Shane J. Trapp ,  Ranjan Khurana ,  Kevin R. Shea

IPC: H01L21/308 ,  H01L21/02

CPC classification number: H01L21/308 ,  H01L21/02642 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/22 ,  H01L21/266 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32 ,  H01L21/76816

Abstract: A method of forming a pattern on a substrate comprises forming spaced, upwardly-open, cylinder-like structures projecting longitudinally outward of a base. Sidewall lining is formed over inner and over outer sidewalls of the cylinder-like structures, and that forms interstitial spaces laterally outward of the cylinder-like structures. The interstitial spaces are individually surrounded by longitudinally-contacting sidewall linings that are over outer sidewalls of four of the cylinder-like structures. Other embodiments are disclosed, including structure independent of method.

Abstract translation: 在衬底上形成图案的方法包括形成间隔开的向上开口的圆柱状结构，其纵向向外突出。 侧壁衬里形成在圆柱状结构的内侧和上侧外侧上，并且在圆柱状结构的横向外侧形成间隙空间。 间隙空间被四个圆柱状结构的外侧壁上的纵向接触的侧壁衬里分开包围。 公开了其他实施例，包括与方法无关的结构。