公开(公告)号：US09825213B2

公开(公告)日：2017-11-21

申请号：US13977915

申请日：2011-12-22

申请人： Mikio Shimada ,  Toshiaki Aiba ,  Toshihiro Ifuku ,  Takanori Matsuda ,  Takayuki Watanabe

发明人： Mikio Shimada ,  Toshiaki Aiba ,  Toshihiro Ifuku ,  Takanori Matsuda ,  Takayuki Watanabe

IPC分类号： H01L41/187 ,  H01L41/09 ,  H01L41/43 ,  B08B7/02 ,  B41J2/14 ,  H02N2/10 ,  H02N2/16

CPC分类号： H01L41/1871 ,  B08B7/028 ,  B41J2/14233 ,  H01L41/0973 ,  H01L41/43 ,  H02N2/106 ,  H02N2/163

摘要： A piezoelectric element having an improved piezoelectric constant is provided, and a liquid discharge head, an ultrasonic motor, and a dust removing device, each of which uses the above piezoelectric element, are also provided. A piezoelectric element at least includes a pair of electrodes and a piezoelectric material provided in contact with the pair of electrodes, the piezoelectric material is formed of an aggregate of crystal grains containing barium titanate as a primary component, and among the crystal grains of the aggregate, crystal grains at least in contact with the electrodes have dislocation layers in the grains. A liquid discharge head, an ultrasonic motor, and a dust removing device each use the above piezoelectric element.

公开(公告)号：US20140084750A1

公开(公告)日：2014-03-27

申请号：US13977915

申请日：2011-12-22

申请人： Mikio Shimada ,  Toshiaki Aiba ,  Toshihiro Ifuku ,  Takanori Matsuda ,  Takayuki Watanabe

发明人： Mikio Shimada ,  Toshiaki Aiba ,  Toshihiro Ifuku ,  Takanori Matsuda ,  Takayuki Watanabe

IPC分类号： H01L41/187

CPC分类号： H01L41/1871 ,  B08B7/028 ,  B41J2/14233 ,  H01L41/0973 ,  H01L41/43 ,  H02N2/106 ,  H02N2/163

摘要： A piezoelectric element having an improved piezoelectric constant is provided, and a liquid discharge head, an ultrasonic motor, and a dust removing device, each of which uses the above piezoelectric element, are also provided. A piezoelectric element at least includes a pair of electrodes and a piezoelectric material provided in contact with the pair of electrodes, the piezoelectric material is formed of an aggregate of crystal grains containing barium titanate as a primary component, and among the crystal grains of the aggregate, crystal grains at least in contact with the electrodes have dislocation layers in the grains. A liquid discharge head, an ultrasonic motor, and a dust removing device each use the above piezoelectric element.

摘要翻译： 提供了具有改善的压电常数的压电元件，并且还提供了使用上述压电元件的液体排出头，超声波马达和除尘装置。 压电元件至少包括一对电极和设置成与该对电极接触的压电材料，压电材料由含有钛酸钡作为主要成分的晶粒聚集体形成，并且在聚集体的晶粒中 至少与电极接触的晶粒在晶粒中具有位错层。 液体排出头，超声波马达和除尘装置均使用上述压电元件。

公开(公告)号：US08715855B2

公开(公告)日：2014-05-06

申请号：US13601272

申请日：2012-08-31

申请人： Soichiro Kawakami ,  Norishige Kakegawa ,  Akio Kashiwazaki ,  Toshiaki Aiba ,  Rie Ueno ,  Mikio Shimada ,  Kaoru Ojima ,  Takashi Noma

发明人： Soichiro Kawakami ,  Norishige Kakegawa ,  Akio Kashiwazaki ,  Toshiaki Aiba ,  Rie Ueno ,  Mikio Shimada ,  Kaoru Ojima ,  Takashi Noma

IPC分类号： H01M4/131

CPC分类号： H01M4/134 ,  H01G11/24 ,  H01G11/46 ,  H01G11/50 ,  H01M4/366 ,  H01M4/386 ,  H01M4/387 ,  H01M4/48 ,  H01M4/58 ,  H01M4/62 ,  H01M10/0525 ,  Y02E60/13 ,  Y10T428/259 ,  Y10T428/2927

摘要： A method of producing a material capable of electrochemically storing and releasing a large amount of lithium ions is provided. The material is used as an electrode material for a negative electrode, and includes silicon or tin primary particles composed of crystal particles each having a specific diameter and an amorphous surface layer formed of at least a metal oxide, having a specific thickness. Gibbs free energy when the metal oxide is produced by oxidation of a metal is smaller than Gibbs free energy when silicon or tin is oxidized, and the metal oxide has higher thermodynamic stability than silicon oxide or tin oxide. The method of producing the electrode material includes reacting silicon or tin with a metal oxide, reacting a silicon oxide or a tin oxide with a metal, or reacting a silicon compound or a tin compound with a metal compound to react with each other.

摘要翻译： 提供了能够电化学储存和释放大量锂离子的材料的制造方法。 该材料用作负极的电极材料，并且包括由具有特定直径的晶体颗粒和由具有特定厚度的至少一种金属氧化物形成的无定形表面层构成的硅或锡一次粒子。 金属氧化物当金属氧化时产生的吉布斯自由能小于硅或锡被氧化时的吉布斯自由能，并且金属氧化物比氧化硅或氧化锡具有更高的热力学稳定性。 制造电极材料的方法包括使硅或锡与金属氧化物反应，使氧化硅或氧化锡与金属反应，或使硅化合物或锡化合物与金属化合物反应，使其彼此反应。

公开(公告)号：US20120321949A1

公开(公告)日：2012-12-20

申请号：US13601272

申请日：2012-08-31

申请人： Soichiro Kawakami ,  Norishige Kakegawa ,  Akio Kashiwazaki ,  Toshiaki Aiba ,  Rie Ueno ,  Mikio Shimada ,  Kaoru Ojima ,  Takashi Noma

发明人： Soichiro Kawakami ,  Norishige Kakegawa ,  Akio Kashiwazaki ,  Toshiaki Aiba ,  Rie Ueno ,  Mikio Shimada ,  Kaoru Ojima ,  Takashi Noma

IPC分类号： H01M4/48 ,  H01M4/64 ,  D01F9/08 ,  B82Y30/00

CPC分类号： H01M4/134 ,  H01G11/24 ,  H01G11/46 ,  H01G11/50 ,  H01M4/366 ,  H01M4/386 ,  H01M4/387 ,  H01M4/48 ,  H01M4/58 ,  H01M4/62 ,  H01M10/0525 ,  Y02E60/13 ,  Y10T428/259 ,  Y10T428/2927

摘要： A method of producing a material capable of electrochemically storing and releasing a large amount of lithium ions is provided. The material is used as an electrode material for a negative electrode, and includes silicon or tin primary particles composed of crystal particles each having a specific diameter and an amorphous surface layer formed of at least a metal oxide, having a specific thickness. Gibbs free energy when the metal oxide is produced by oxidation of a metal is smaller than Gibbs free energy when silicon or tin is oxidized, and the metal oxide has higher thermodynamic stability than silicon oxide or tin oxide. The method of producing the electrode material includes reacting silicon or tin with a metal oxide, reacting a silicon oxide or a tin oxide with a metal, or reacting a silicon compound or a tin compound with a metal compound to react with each other.

摘要翻译： 提供了能够电化学储存和释放大量锂离子的材料的制造方法。 该材料用作负极的电极材料，并且包括由具有特定直径的晶体颗粒和由具有特定厚度的至少一种金属氧化物形成的无定形表面层构成的硅或锡一次粒子。 金属氧化物当金属氧化时产生的吉布斯自由能小于硅或锡被氧化时的吉布斯自由能，并且金属氧化物比氧化硅或氧化锡具有更高的热力学稳定性。 制造电极材料的方法包括使硅或锡与金属氧化物反应，使氧化硅或氧化锡与金属反应，或使硅化合物或锡化合物与金属化合物反应，使其彼此反应。

公开(公告)号：US20090162750A1

公开(公告)日：2009-06-25

申请号：US12394736

申请日：2009-02-27

申请人： Soichiro Kawakami ,  Norishige Kakegawa ,  Akio Kashiwazaki ,  Toshiaki Aiba ,  Rie Ueno ,  Mikio Shimada ,  Kaoru Ojima ,  Takashi Noma

发明人： Soichiro Kawakami ,  Norishige Kakegawa ,  Akio Kashiwazaki ,  Toshiaki Aiba ,  Rie Ueno ,  Mikio Shimada ,  Kaoru Ojima ,  Takashi Noma

IPC分类号： H01M4/58 ,  H01M4/88

CPC分类号： H01M4/134 ,  H01G11/24 ,  H01G11/46 ,  H01G11/50 ,  H01M4/366 ,  H01M4/386 ,  H01M4/387 ,  H01M4/48 ,  H01M4/58 ,  H01M4/62 ,  H01M10/0525 ,  Y02E60/13 ,  Y10T428/259 ,  Y10T428/2927

摘要： A method of producing a material capable of electrochemically storing and releasing a large amount of lithium ions is provided. The material is used as an electrode material for a negative electrode, and includes silicon or tin primary particles composed of crystal particles each having a specific diameter and an amorphous surface layer formed of at least a metal oxide, having a specific thickness. Gibbs free energy when the metal oxide is produced by oxidation of a metal is smaller than Gibbs free energy when silicon or tin is oxidized, and the metal oxide has higher thermodynamic stability than silicon oxide or tin oxide. The method of producing the electrode material includes reacting silicon or tin with a metal oxide, reacting a silicon oxide or a tin oxide with a metal, or reacting a silicon compound or a tin compound with a metal compound to react with each other.

摘要翻译： 提供了能够电化学储存和释放大量锂离子的材料的制造方法。 该材料用作负极的电极材料，并且包括由具有特定直径的晶体颗粒和由具有特定厚度的至少一种金属氧化物形成的无定形表面层构成的硅或锡一次粒子。 金属氧化物当金属氧化时产生的吉布斯自由能小于硅或锡被氧化时的吉布斯自由能，并且金属氧化物比氧化硅或氧化锡具有更高的热力学稳定性。 制造电极材料的方法包括使硅或锡与金属氧化物反应，使氧化硅或氧化锡与金属反应，或使硅化合物或锡化合物与金属化合物反应，使其彼此反应。

公开(公告)号：US08337712B2

公开(公告)日：2012-12-25

申请号：US12120461

申请日：2008-05-14

申请人： Kenji Tamamori ,  Masahiko Okunuki ,  Shinan Wang ,  Taiko Motoi ,  Haruhito Ono ,  Toshiaki Aiba

发明人： Kenji Tamamori ,  Masahiko Okunuki ,  Shinan Wang ,  Taiko Motoi ,  Haruhito Ono ,  Toshiaki Aiba

IPC分类号： B29D11/00 ,  B44C1/22

CPC分类号： B29D11/00 ,  G02B2006/1213 ,  G03F7/2065 ,  H01S5/105 ,  H01S5/2081

摘要： A method for forming an etching mask comprises irradiating a focused ion beam onto a surface of a substrate and forming an etching mask used for oblique etching including an ion containing portion in the irradiated region. A method for fabricating a three-dimensional structure comprises preparing a substrate, irradiating a focused ion beam onto a surface of the substrate and forming an etching mask including an ion-containing portion in the irradiated region, and dry-etching the substrate from a diagonal direction using the etching mask and forming a plurality of holes.

摘要翻译： 形成蚀刻掩模的方法包括将聚焦的离子束照射到衬底的表面上，并且在照射区域中形成用于包括含离子的部分的倾斜蚀刻的蚀刻掩模。 制造三维结构的方法包括：准备衬底，将聚焦的离子束照射到衬底的表面上，并在照射区域中形成包括含离子的部分的蚀刻掩模，并从对角线对衬底进行干蚀刻 方向，并形成多个孔。

公开(公告)号：US07902637B2

公开(公告)日：2011-03-08

申请号：US12109701

申请日：2008-04-25

申请人： Taiko Motoi ,  Kenji Tamamori ,  Shinan Wang ,  Masahiko Okunuki ,  Haruhito Ono ,  Toshiaki Aiba ,  Nobuki Yoshimatsu

发明人： Taiko Motoi ,  Kenji Tamamori ,  Shinan Wang ,  Masahiko Okunuki ,  Haruhito Ono ,  Toshiaki Aiba ,  Nobuki Yoshimatsu

IPC分类号： H01L29/06 ,  H01L21/302

CPC分类号： B82Y10/00 ,  H01L21/3083 ,  H01L21/31144

摘要： A nano structure formed on the surface of a substrate containing Si and having a pattern of at least 2 μm in depth, in which Ga or In is contained in the surface of the pattern, and the Ga or the In has a concentration distribution that an elemental composition ratio Ga/Si or In/Si of Si and Ga or In detected by an X-ray photoelectron spectroscopy is at least 0.4 atomic percent in the depth direction of the substrate, and the maximum value of the concentration is positioned within 50 nm of the surface of the pattern.

摘要翻译： 纳米结构形成在含有Si的衬底的表面上，其深度为至少2μm的图案，其中Ga或In包含在图案的表面中，Ga或In的浓度分布为 通过X射线光电子能谱检测的Si和Ga或In的元素组成比Ga / Si或In / Si在衬底的深度方向上至少为0.4原子％，并且浓度的最大值位于50nm内 的图案表面。

公开(公告)号：US20090272970A1

公开(公告)日：2009-11-05

申请号：US12089907

申请日：2006-11-01

申请人： Toshiaki Aiba ,  Masafumi Sano ,  Nobuyuki Kaji

发明人： Toshiaki Aiba ,  Masafumi Sano ,  Nobuyuki Kaji

IPC分类号： H01L29/786

CPC分类号： H01L29/04 ,  H01L29/7869 ,  H01L29/78696

摘要： Provided is a field-effect transistor including an active layer and a gate insulating film, wherein the active layer includes an amorphous oxide layer containing an amorphous region and a crystalline region, and the crystalline region is in the vicinity of or in contact with an interface between the amorphous oxide layer and the gate insulating film.

摘要翻译： 提供了一种包括有源层和栅极绝缘膜的场效应晶体管，其中有源层包括含有非晶区域和结晶区域的非晶氧化物层，并且晶体区域在界面附近或与界面接触 在非晶氧化物层和栅极绝缘膜之间。

公开(公告)号：US20060131269A1

公开(公告)日：2006-06-22

申请号：US10542145

申请日：2004-01-30

申请人： Toshiaki Aiba

发明人： Toshiaki Aiba

IPC分类号： C23F1/00

CPC分类号： H01J37/3056 ,  B81C99/002 ,  H01J2237/20 ,  H01J2237/3114 ,  H01J2237/31744

摘要： A method of moving an object comprises a step of fixing the object to an object-moving means, a step of moving the object to a prescribed position by the object-moving means, and a step of releasing the object from the object-moving means; wherein the fixing step comprises forming a deposit, for fixation of the object to the object-moving means by applying a first corpuscular beam in a first gas to form a deposit; and the releasing step comprises etching the deposit by applying a second corpuscular beam in contact with a second gas.

摘要翻译： 移动物体的方法包括将物体固定到物体移动装置的步骤，通过物体移动装置将物体移动到规定位置的步骤，以及从物体移动装置释放物体的步骤 ; 其中所述固定步骤包括形成沉积物，用于通过在第一气体中施加第一粒子束以形成沉积物来将所述物体固定到所述物体移动装置; 并且释放步骤包括通过施加与第二气体接触的第二粒子束来蚀刻沉积物。

公开(公告)号：US06214738B1

公开(公告)日：2001-04-10

申请号：US09466910

申请日：1999-12-20

申请人： Toshiaki Aiba ,  Hidetoshi Nojiri ,  Taiko Motoi ,  Tohru Den ,  Tatsuya Iwasaki

发明人： Toshiaki Aiba ,  Hidetoshi Nojiri ,  Taiko Motoi ,  Tohru Den ,  Tatsuya Iwasaki

IPC分类号： H01L21302

CPC分类号： B82Y15/00 ,  B82Y30/00 ,  C25D11/022 ,  C25D11/04 ,  C25D11/045 ,  C25D11/16 ,  C25D11/20 ,  C25D11/24

摘要： Provided is a method for producing regularly ordered narrow pores excellent in linearity, and a structure with such narrow pores. A method for producing a narrow pore comprises a step of radiating a particle beam onto a workpiece, and a step of carrying out anodic oxidation of the workpiece having been irradiated with the particle beam, to form a narrow pore in the workpiece.

摘要翻译： 本发明提供一种生产线性优异的规则排列的窄孔的方法和具有这种窄孔的结构。 用于制造窄孔的方法包括将粒子束照射到工件上的步骤，以及对已经被粒子束照射的工件进行阳极氧化的步骤，以在工件中形成窄孔。