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公开(公告)号：US07132091B2
公开(公告)日：2006-11-07
申请号：US10256759
申请日：2002-09-27
摘要： A single crystal silicon ingot having a constant diameter portion that contains arsenic dopant atoms at a concentration which results in the silicon having a resistivity that is less than about 0.003 Ω·cm.
摘要翻译： 具有恒定直径部分的单晶硅锭，其含有砷掺杂剂原子，其浓度导致硅的电阻率小于约0.003Ω·cm。
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2.发明申请Process for making silicon wafers with stabilized oxygen precipitate nucleation centers 失效制造具有稳定氧的硅晶片的工艺沉淀成核中心公开(公告)号：US20050048247A1
公开(公告)日：2005-03-03
申请号：US10963340
申请日：2004-10-12
申请人： Luciano Mule'Stagno , Jeffrey Libbert , Richard Phillips , Milind Kulkarni , Mohsen Banan , Stephen Brunkhorst
发明人： Luciano Mule'Stagno , Jeffrey Libbert , Richard Phillips , Milind Kulkarni , Mohsen Banan , Stephen Brunkhorst
IPC分类号： H01L21/322 , B32B3/02
CPC分类号： H01L21/3226 , H01L21/3225 , Y10T428/21
摘要： A process for imparting controlled oxygen precipitation behavior to a single crystal silicon wafer. Specifically, prior to formation of the oxygen precipitates, the wafer bulk comprises dopant stabilized oxygen precipitate nucleation centers. The dopant is selected from a group consisting of nitrogen and carbon, and the concentration of the dopant is sufficient to allow the oxygen precipitate nucleation centers to withstand thermal processing, such as an epitaxial deposition process, while maintaining the ability to dissolve any grown-in nucleation centers.
摘要翻译： 将受控氧析出行为赋予单晶硅晶片的方法。 具体地，在形成氧沉淀物之前，晶片本体包括掺杂剂稳定的氧沉淀成核中心。 掺杂剂选自氮和碳组成，掺杂剂的浓度足以使氧沉淀成核中心承受诸如外延沉积工艺之类的热处理，同时保持溶解任何生长的能力 成核中心。
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3.发明授权Silicon wafers with stabilized oxygen precipitate nucleation centers and process for making the same 有权具有稳定氧的硅晶片沉淀成核中心和制造相同的工艺公开(公告)号：US06808781B2
公开(公告)日：2004-10-26
申请号：US10328481
申请日：2002-12-23
申请人： Luciano Mule'Stagno , Jeffrey L. Libbert , Richard J. Phillips , Milind Kulkarni , Mohsen Banan , Stephen J. Brunkhorst
发明人： Luciano Mule'Stagno , Jeffrey L. Libbert , Richard J. Phillips , Milind Kulkarni , Mohsen Banan , Stephen J. Brunkhorst
IPC分类号： C30B2906
CPC分类号： H01L21/3225 , H01L21/3226 , Y10T428/21
摘要： A silicon wafer having a controlled oxygen precipitation behavior such that a denuded zone extending inward from the front surface and oxygen precipitates in the wafer bulk sufficient for intrinsic gettering purposes are ultimately formed. Specifically, prior to formation of the oxygen precipitates, the wafer bulk comprises dopant stabilized oxygen precipitate nucleation centers. The dopant is selected from a group consisting of nitrogen and carbon and the concentration of the dopant is sufficient to allow the oxygen precipitate nucleation centers to withstand thermal processing such as an epitaxial deposition process while maintaining the ability to dissolve any grown-in nucleation centers.
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4.发明授权Process for making silicon wafers with stabilized oxygen precipitate nucleation centers 失效制造具有稳定氧的硅晶片的工艺沉淀成核中心公开(公告)号：US07201800B2
公开(公告)日：2007-04-10
申请号：US10963340
申请日：2004-10-12
申请人： Luciano Mule'Stagno , Jeffrey L. Libbert , Richard J. Phillips , Milind Kulkarni , Mohsen Banan , Stephen J. Brunkhorst
发明人： Luciano Mule'Stagno , Jeffrey L. Libbert , Richard J. Phillips , Milind Kulkarni , Mohsen Banan , Stephen J. Brunkhorst
IPC分类号： C30B15/20
CPC分类号： H01L21/3226 , H01L21/3225 , Y10T428/21
摘要： A process for imparting controlled oxygen precipitation behavior to a single crystal silicon wafer. Specifically, prior to formation of the oxygen precipitates, the wafer bulk comprises dopant stabilized oxygen precipitate nucleation centers. The dopant is selected from a group consisting of nitrogen and carbon, and the concentration of the dopant is sufficient to allow the oxygen precipitate nucleation centers to withstand thermal processing, such as an epitaxial deposition process, while maintaining the ability to dissolve any grown-in nucleation centers.
摘要翻译： 将受控氧析出行为赋予单晶硅晶片的方法。 具体地，在形成氧沉淀物之前，晶片本体包括掺杂剂稳定的氧沉淀成核中心。 掺杂剂选自氮和碳组成，掺杂剂的浓度足以使氧沉淀成核中心承受诸如外延沉积工艺之类的热处理，同时保持溶解任何生长的能力 成核中心。
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5.发明授权Multi-stage arsenic doping process to achieve low resistivity in silicon crystal grown by czochralski method 失效多级砷掺杂工艺，通过切克劳斯基法生长的硅晶体中实现低电阻率公开(公告)号：US06312517B1
公开(公告)日：2001-11-06
申请号：US09568751
申请日：2000-05-11
IPC分类号： C30B1504
摘要： A method of lowering the resistivity of resultant silicon crystal from a Czochralski crystal growing process by adding arsenic dopant to the melt in multiple stages.
摘要翻译： 一种通过在多级阶段向熔体中添加砷掺杂剂来从切克劳斯基晶体生长工艺降低所得硅晶体的电阻率的方法。
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6.发明授权Method and system for automatic attempted recovery of equipment from transient faults 有权从瞬态故障中自动尝试恢复设备的方法和系统公开(公告)号：US07664980B2
公开(公告)日：2010-02-16
申请号：US11682634
申请日：2007-03-06
申请人： Milind Kulkarni , Rashmi V. Varma
发明人： Milind Kulkarni , Rashmi V. Varma
IPC分类号： G06F11/00
CPC分类号： G06F11/1415 , G06F11/0709 , G06F11/076
摘要： A method for automatically attempting to recover equipment from a transient fault includes detecting a fault associated with the equipment in a node in a communications network, determining whether the fault associated with the equipment is transient, if the fault is transient automatically attempting to recover the equipment from the transient fault without user intervention, if the recovery attempt is successful monitoring the equipment for a pre-determined period of time to determine if the fault recurs, and if the fault recurs automatically re-attempting to recover the equipment from the fault until the fault does not recur in the pre-determined period of time or until a pre-determined number of attempts to recover the equipment have been performed.
摘要翻译： 一种用于自动尝试从瞬态故障中恢复设备的方法包括检测与通信网络中的节点中的设备相关联的故障，确定与设备相关联的故障是否是瞬态的，如果故障是瞬时自动地尝试恢复设备 从没有用户干预的瞬态故障中，如果恢复尝试成功监视设备预定的时间段，以确定故障是否重现，并且如果故障自动重新尝试从故障恢复设备，直到 故障不会在预定的时间段内重复出现，或者直到已经执行了恢复设备的预定次数。
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7.发明申请Method and apparatus for growing silicon crystal by controlling melt-solid interface shape as a function of axial length 审中-公开通过控制熔体 - 固体界面形状作为轴向长度的函数来生长硅晶体的方法和装置公开(公告)号：US20060005761A1
公开(公告)日：2006-01-12
申请号：US11145626
申请日：2005-06-06
申请人： Milind Kulkarni , Vijay Nithiananthan , Lee Ferry , JaeWoo Ryu , JinYong Uhm , Steven Kimbel , ChangBum Kim , Joseph Holzer , Richard Schrenker , KangSeon Lee
发明人： Milind Kulkarni , Vijay Nithiananthan , Lee Ferry , JaeWoo Ryu , JinYong Uhm , Steven Kimbel , ChangBum Kim , Joseph Holzer , Richard Schrenker , KangSeon Lee
CPC分类号： C30B29/06 , C30B15/22 , C30B15/30 , Y10T117/1008 , Y10T117/1052
摘要： The present invention provides a methods and system for producing semiconductor grade single crystals that are substantially free of undesirable agglomerated defects. A vacancy/interstial (V/I) boundary simulator analyzes various melt-solid interface shapes to predict a corresponding V/I transition curve for each of the various melt-solid interface shapes. A target melt-solid interface shape corresponding to a substantially flat V/I curve is identified for each of a plurality of axial positions along the length of the crystal. Target operating parameters to achieve each of the identified melt-solid interface shapes are stored in a melt-solid interfaced shape profile. A control system is responsive to the stored profile to generate one or more control signals to control one or more output devices such that the melt-solid interfaced shape substantially follows the target shapes as defined by the profile during crystal growth.
摘要翻译： 本发明提供了一种生产半导体级单晶的方法和系统，其基本上没有不希望的附聚缺陷。 空位/间隙（V / I）边界模拟器分析各种熔体 - 固体界面形状，以预测各种熔体 - 固体界面形状的相应V / I过渡曲线。 对于沿着晶体长度的多个轴向位置中的每一个，识别对应于基本上平坦的V / I曲线的目标熔体 - 固体界面形状。 实现每个识别的熔体 - 固体界面形状的目标操作参数被存储在熔体 - 固体界面形状轮廓中。 控制系统响应于存储的轮廓以产生一个或多个控制信号以控制一个或多个输出装置，使得熔体 - 固体接合形状基本上遵循在晶体生长期间由轮廓限定的目标形状。
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公开(公告)号：US20060209778A1
公开(公告)日：2006-09-21
申请号：US11440144
申请日：2006-05-23
申请人： Gaetan Feige , Rabih Dabboussi , Kent Leung , Milind Kulkarni
发明人： Gaetan Feige , Rabih Dabboussi , Kent Leung , Milind Kulkarni
IPC分类号： H04Q7/24
CPC分类号： H04L29/12009 , H04L29/12509 , H04L61/2567 , H04W4/18 , H04W8/04 , H04W8/26 , H04W60/00 , H04W80/04
摘要： Methods and apparatus for establishing communication between a Mobile Node and a Home Agent are disclosed. The Home Agent receives a registration request packet from the Mobile Node, the registration request packet including an IP source address and a Home Agent address. The Home Agent then detects from the registration request packet when network address translation has been performed. When it has been detected that network address translation has been performed, a tunnel is set up between the Home Agent address and the IP source address.
摘要翻译： 公开了用于建立移动节点和归属代理之间的通信的方法和装置。 归属代理从移动节点接收注册请求分组，注册请求分组包括IP源地址和归属代理地址。 当执行网络地址转换时，归属代理随后从注册请求分组中检测。 当检测到已经执行了网络地址转换时，在归属代理地址和IP源地址之间建立隧道。
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9.发明授权Generating a pumping force in a silicon melt by applying a time-varying magnetic field 有权通过施加时变磁场在硅熔体中产生泵送力公开(公告)号：US08551247B2
公开(公告)日：2013-10-08
申请号：US12537066
申请日：2009-08-06
IPC分类号： C30B30/04
CPC分类号： C30B15/305 , C30B29/06
摘要： Controlling crystal growth in a crystal growing system is described. The crystal growing system includes a heated crucible including a semiconductor melt from which a monocrystalline ingot is grown according to a Czochralski and the ingot is grown on a seed crystal pulled from the melt. The method includes applying a cusped magnetic field to the melt by supplying an upper coil with a first direct current (IUDC) and supplying a lower coil with a second direct current (ILDC). The method also includes supplying the upper coil with a first alternating current (IUAC) and supplying the lower coil with a second alternating current (ILAC) to generate a time-varying magnetic field, wherein the time-varying magnetic field generates a pumping force in the semiconductor melt.
摘要翻译： 描述了在晶体生长系统中控制晶体生长。 晶体生长系统包括加热的坩埚，其包括半导体熔体，根据Czochralski从其中生长单晶锭，并且该晶锭在从熔体拉出的晶种上生长。 该方法包括通过向上部线圈提供第一直流电流（IUDC）并向下部线圈提供第二直流电流（ILDC），向熔体施加一个定位的磁场。 该方法还包括向上部线圈提供第一交流电流（IUAC）并且向下部线圈提供第二交流电流（ILAC）以产生时变磁场，其中时变磁场产生泵送力 半导体熔化。
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公开(公告)号：US20120042002A1
公开(公告)日：2012-02-16
申请号：US12477821
申请日：2009-06-03
申请人： Tony Paul Smith , Julian Hartley Cork , Tuan Long Pham , Milind Kulkarni , Sergejs Olhoviks , Vince Sethi , Anthony Brian Knife , Tarik Cherkaoui , Richard Alexander Hill
发明人： Tony Paul Smith , Julian Hartley Cork , Tuan Long Pham , Milind Kulkarni , Sergejs Olhoviks , Vince Sethi , Anthony Brian Knife , Tarik Cherkaoui , Richard Alexander Hill
CPC分类号： G06Q30/016 , G06F9/453
摘要： A system and method for context driven centralized help is provided. A daemon application initiated on a workstation or mobile device is configured to intercept a help request received in connection with an active application when a pre-defined triggering event is invoked. The daemon application captures context corresponding to the current page or function in use with the active application and generates a corresponding information dataset pertaining to the captured context. The information dataset is transmitted to a remote site, configured to query a content database, to determine if help-related content has been previously associated with the captured context, wherein a positive determination of the existence of such an association results in the help-related content being retrieved and displayed on the workstation or mobile device.
摘要翻译： 提供了一种用于上下文驱动集中式帮助的系统和方法。 在工作站或移动设备上启动的守护程序应用被配置为当调用预定义的触发事件时拦截与活动应用相关联的帮助请求。 守护程序应用程序捕获与当前页面或与当前应用程序一起使用的功能相对应的上下文，并生成与捕获的上下文有关的对应信息数据集。 信息数据集被发送到远程站点，被配置为查询内容数据库，以确定帮助相关内容之前是否已经与所捕获的上下文相关联，其中存在这种关联的肯定确定导致帮助相关 内容被检索并显示在工作站或移动设备上。
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