公开(公告)号：US4420233A

公开(公告)日：1983-12-13

申请号：US381675

申请日：1982-05-24

申请人： Mineo Nomoto ,  Katsuhiro Iwashita ,  Toru Otsubo ,  Susumu Aiuchi

发明人： Mineo Nomoto ,  Katsuhiro Iwashita ,  Toru Otsubo ,  Susumu Aiuchi

IPC分类号： G03B13/36 ,  G02B7/28 ,  G03B3/10 ,  G03F7/20 ,  G03F7/207 ,  G03F9/00 ,  H01L21/027 ,  H01L21/30 ,  G03B27/34 ,  G03B21/28

CPC分类号： G03F7/70891 ,  G03B3/10 ,  G03F9/70

摘要： A projecting apparatus for forming an image of a mask on a wafer by a projector of a unit magnification reflection system having a concave spherical mirror and a convex spherical mirror. The distance from the projector to the mask or the upper side of a mask holder for holding the mask and the distance from the projector to the wafer are measured. An error of the image-forming position is computed from the distance measurements. At least one of the mask, the wafer and the projector is moved along the direction of projection in a manner to eliminate the error of the image-forming position computed, thus attaining automatic focus adjustment.

摘要翻译： 一种用于通过具有凹球面镜和凸球面镜的单元放大反射系统的投影仪在晶片上形成掩模图像的投影设备。 测量从投影仪到掩模的距离或用于保持面罩的掩模支架的上侧以及从投影仪到晶片的距离。 从距离测量计算图像形成位置的误差。 掩模，晶片和投影仪中的至少一个沿着投影方向移动，以消除所计算的图像形成位置的误差，从而获得自动聚焦调整。

公开(公告)号：US07020306B2

公开(公告)日：2006-03-28

申请号：US09774723

申请日：2001-02-01

申请人： Takenori Hirose ,  Hiroyuki Kojima ,  Mineo Nomoto ,  Susumu Aiuchi

发明人： Takenori Hirose ,  Hiroyuki Kojima ,  Mineo Nomoto ,  Susumu Aiuchi

IPC分类号： G06K9/00

CPC分类号： B24B37/20 ,  B24B49/12 ,  G01N21/41 ,  G01N21/55

摘要： The object of the present invention is to establish a technology for directly evaluating polishing pad surface conditions, to allow high-precision CMP process management, and to improve process throughput. The pad surface is illuminated with light. The intensity of reflected light or fluorescence from the illuminated area or an intensity distribution image is used directly evaluate the pad surface condition. Based on the results of this evaluation, conditioning conditions for a conditioner are optimized, thus allowing high-precision CMP processing while maintaining good pad surface conditions.

摘要翻译： 本发明的目的是建立一种用于直接评估抛光垫表面状态，允许高精度CMP处理管理并提高工艺生产能力的技术。 焊盘表面用光照亮。 使用来自照射区域的反射光或荧光的强度或强度分布图像直接评估焊盘表面状况。 根据该评价结果，对调理剂的调理条件进行优化，从而在保持良好的垫表面状态的同时进行高精度的CMP处理。

公开(公告)号：US4628531A

公开(公告)日：1986-12-09

申请号：US583867

申请日：1984-02-27

申请人： Keiichi Okamoto ,  Kozo Nakahata ,  Yukio Matsuyama ,  Hideaki Doi ,  Susumu Aiuchi ,  Mineo Nomoto

发明人： Keiichi Okamoto ,  Kozo Nakahata ,  Yukio Matsuyama ,  Hideaki Doi ,  Susumu Aiuchi ,  Mineo Nomoto

IPC分类号： G01B11/24 ,  G01N21/88 ,  G01N21/956 ,  G06T7/00 ,  G06K9/00

CPC分类号： G06T7/001 ,  G01N21/956 ,  G06T2207/10056 ,  G06T2207/30148

摘要： A pattern checking apparatus carries out the detection of candidate defects through a primary selection with a sensitivity high enough to detect any existing defect, and then carries out a detailed analysis by a controlling processor for a pattern including the periphery of the detected candidate defect through a secondary selection in which a candidate defect which is not a defect in a practical sense is removed from candidates, so that only real defects are detected.

摘要翻译： 模式检查装置通过具有足够高的灵敏度的主要选择来执行候选缺陷的检测，以检测任何现有缺陷，然后通过控制处理器对包括检测到的候选缺陷的外围的图案进行详细分析，通过 从候选者中删除不是实际意义上的缺陷的候选缺陷的次要选择，从而仅检测到真实的缺陷。

公开(公告)号：US4391511A

公开(公告)日：1983-07-05

申请号：US245193

申请日：1981-03-18

申请人： Nobuyuki Akiyama ,  Yukio Kembo ,  Yasuo Nakagawa ,  Susumu Aiuchi ,  Mineo Nomoto

发明人： Nobuyuki Akiyama ,  Yukio Kembo ,  Yasuo Nakagawa ,  Susumu Aiuchi ,  Mineo Nomoto

IPC分类号： G03F7/20 ,  G03F7/24 ,  G03F9/02 ,  H01L21/683 ,  G03B27/52

CPC分类号： G03F7/707 ,  G03F7/24 ,  H01L21/6838 ,  H01L21/68735 ,  H01L21/6875 ,  Y10T279/11

摘要： A light exposure device and method for exposing and printing a predetermined pattern on an exposure surface of a substrate comprises measuring means for measuring curvature of the exposure surface of the substrate, a chuck including suck and hold means for sucking and holding a back surface of the substrate opposite to the exposure surface and deforming means for imparting a force to the back surface of the substrate to deform the substrate, and control means for controlling the deforming means of the chuck in accordance with the curvature of the exposure surface of the substrate measured by the measuring means such that the exposure surface of the substrate conforms to an image surface of the pattern over an entire exposure area within a predetermined allowable error.

摘要翻译： 一种用于在基板的曝光表面上曝光和印刷预定图案的曝光装置和方法，包括：用于测量基板的曝光表面的曲率的测量装置，包括用于吸附和保持基板的背面的吸持和保持装置的卡盘 与曝光面相反的基板和用于赋予基板背面使其变形的变形机构，以及控制装置，用于根据基板的曝光面的曲率来控制卡盘的变形装置，该曲率由 所述测量装置使得所述基板的曝光表面在预定的允许误差范围内在整个曝光区域上符合所述图案的图像表面。

公开(公告)号：US4675096A

公开(公告)日：1987-06-23

申请号：US645671

申请日：1984-08-30

申请人： Hideki Tateishi ,  Tamotsu Shimizu ,  Susumu Aiuchi ,  Katsuhiro Iwashita ,  Hiroshi Nakamura

发明人： Hideki Tateishi ,  Tamotsu Shimizu ,  Susumu Aiuchi ,  Katsuhiro Iwashita ,  Hiroshi Nakamura

IPC分类号： B65G49/07 ,  C23C14/34 ,  C23C14/56 ,  H01L21/203 ,  C23C14/36

CPC分类号： C23C14/566 ,  C23C14/568

摘要： A continuous sputtering apparatus comprising a main vacuum chamber, one loading station and a plurality of process stations capable of having their pressures controlled separately. The process station includes a sub vacuum chamber capable of being in communication with the main vacuum chamber through an opening and an evacuation port. The loading station and the process stations are arranged to be spaced with equal angles. Substrate holders are provided to face the stations and are rotated by said equal angle in a time. The substrate holder opens and closes the opening of the sub vacuum chamber to serve as a gate valve.

摘要翻译： 一种连续溅射装置，包括主真空室，一个装载站和能够分别控制其压力的多个处理站。 处理站包括能够通过开口和排气口与主真空室连通的副真空室。 装载站和处理站被布置为以相等角度间隔开。 基板保持器被设置成面对车站，并且在一段时间内以相等的角度旋转。 基板保持器打开和关闭副真空室的开口以用作闸阀。

公开(公告)号：US4744660A

公开(公告)日：1988-05-17

申请号：US850683

申请日：1986-04-11

申请人： Minori Noguchi ,  Toru Otsubo ,  Susumu Aiuchi

发明人： Minori Noguchi ,  Toru Otsubo ,  Susumu Aiuchi

IPC分类号： G01B11/22 ,  G01B9/02

CPC分类号： G01B11/22

摘要： An apparatus for measuring a difference in level in a sample comprises a light source section which provides illumination light of a variable-wavelength. The illumination light is irradiated onto the sample. A group of filters is provided for shielding diffraction light rays of O-order or other than O-order of the light reflected from the sample. The intensity of interference light of the light rays not shielded by the filter group is detected by a light detector which in turn converts it into an electric signal. An arithmetic operation unit receives the electric signal while the wavelength of the illumination light from the light source section is continuously varied. In the arithmetic unit, wavelengths at which the electric signal or detected light intensity takes extreme values are determined, and the level difference in the sample is determined on the basis of those wavelengths.

摘要翻译： 用于测量样品中的电平差的装置包括提供可变波长的照明光的光源部分。 将照明光照射到样品上。 提供了一组滤光器，用于屏蔽从样品反射的光的O级或O级的衍射光线。 不被滤光器组屏蔽的光线的干涉光的强度由光检测器检测，光检测器又将其转换为电信号。 算术运算单元接收电信号，同时来自光源部分的照明光的波长连续变化。 在算术单元中，确定电信号或检测光强取极值的波长，并根据这些波长确定样本中的电平差。

公开(公告)号：US4615620A

公开(公告)日：1986-10-07

申请号：US685550

申请日：1984-12-24

申请人： Minori Noguchi ,  Toru Otsubo ,  Susumu Aiuchi

发明人： Minori Noguchi ,  Toru Otsubo ,  Susumu Aiuchi

IPC分类号： G01B11/22

CPC分类号： G01B11/22

摘要： An apparatus for measuring in a non-contact manner the depth of pits and grooves formed by etching in periodic patterns on the surface of a substrate. The measurement is based on the detection of the intensity of a diffraction ray excluding that of the 0th order through the irradiation of a light beam with variable wave length to the sample. Whereas, the conventional measuring system is sensitive to a diffraction ray of the 0th order, i.e., the major component of the reflected light, that hampers the detection of a higher order diffraction ray carrying information of the depth.

摘要翻译： 一种用于以非接触方式测量在衬底的表面上以周期性图案蚀刻形成的凹坑和凹槽的深度的装置。 该测量基于通过对样品照射具有可变波长的光束而不考虑第0级的衍射强度的检测。 而传统的测量系统对第0级的衍射光线（即反射光的主要分量）敏感，这阻碍了检测到承载深度信息的较高阶衍射光线。

公开(公告)号：US4479848A

公开(公告)日：1984-10-30

申请号：US579941

申请日：1984-02-14

申请人： Toru Otsubo ,  Susumu Aiuchi ,  Takashi Kamimura

发明人： Toru Otsubo ,  Susumu Aiuchi ,  Takashi Kamimura

IPC分类号： C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/306 ,  B44C1/22 ,  C03C15/00 ,  C23F1/02

CPC分类号： H01J37/32935 ,  H01L21/302

摘要： The present invention consists in an etching method and apparatus wherein an optical image which is reflected from a region of a dicing stripe pattern on a substrate to-be-etched, such as a semiconductor wafer, is focused by a projecting optical system during selective etching. The focused pattern is converted into an image signal by an image detector, and a change of contrast in the region of the dicing stripe pattern is determined from the image signal. Based on this, an ending time for the etching can be decided from the change of contrast.

摘要翻译： 本发明是一种蚀刻方法和装置，其中在选择性刻蚀中通过投影光学系统聚焦由半导体晶片等待刻蚀的基板上的切割条纹图案的区域反射的光学图像 。 通过图像检测器将聚焦图案转换为图像信号，并根据图像信号确定切割条纹图案区域中的对比度变化。 基于此，可以根据对比度的变化来确定蚀刻的结束时间。

公开(公告)号：US4487678A

公开(公告)日：1984-12-11

申请号：US597749

申请日：1984-04-06

申请人： Minori Noguchi ,  Toru Otsubo ,  Susumu Aiuchi ,  Takashi Kamimura ,  Teru Fujii

发明人： Minori Noguchi ,  Toru Otsubo ,  Susumu Aiuchi ,  Takashi Kamimura ,  Teru Fujii

IPC分类号： H01J37/18 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/677 ,  C23C15/00

CPC分类号： H01L21/302 ,  H01J37/185 ,  H01L21/67069 ,  H01L21/67126 ,  H01L21/67745

摘要： The invention is directed to a dry-etching apparatus used for etching an aluminum wiring film formed on a wafer, and more particularly to a dry-etching apparatus which can remove chlorides deposited on the surface of the wafer during the dry etching thereof, as well as an etching resist film, without having to take the wafer out. This dry-etching apparatus is provided with an etching chamber, a vacuum antechamber attached to the etching chamber by a gate valve, and a post-treatment chamber attached to the vacuum antechamber. The apparatus is so formed that etched wafers removed to the vacuum antechamber can be sent therefrom to the post-treatment chamber, and then the post-treated wafers can be removed to the vacuum antechamber again, and then removed therefrom to the atmosphere.

摘要翻译： 本发明涉及一种用于蚀刻形成在晶片上的铝布线膜的干蚀刻装置，更具体地说涉及一种能够在其干蚀刻期间去除沉积在晶片表面上的氯化物的干蚀刻装置，以及 作为抗蚀剂膜，而不必将晶片取出。 该干式蚀刻装置设置有蚀刻室，通过闸阀附着到蚀刻室的真空室以及与真空前厅连接的后处理室。 该设备被形成为将去除到真空前厅的蚀刻的晶片从其中被送到后处理室，然后将经后处理的晶片再次移至真空前厅，然后从其中移除到大气中。

公开(公告)号：USRE33424E

公开(公告)日：1990-11-06

申请号：US254964

申请日：1988-10-07

申请人： Minori Noguchi ,  Toru Otsubo ,  Susumu Aiuchi

发明人： Minori Noguchi ,  Toru Otsubo ,  Susumu Aiuchi

IPC分类号： G01B11/22

CPC分类号： G01B11/22

摘要： An apparatus .Iadd.and method .Iaddend.for measuring in a non-contact manner the depth of pits and grooves formed by etching in periodic patterns on the surface of a substrate. The measurement is based on the detection of the intensity of a diffraction ray excluding that of the 0th order through the irradiation of a light beam with variable wave length to the sample. Whereas, the conventional measuring system is sensitive to a diffraction ray of the 0th order, i.e., the major component of the reflected light, that hampers the detection of a higher order diffraction ray carrying information of the depth.