公开(公告)号：US06309964B1

公开(公告)日：2001-10-30

申请号：US09349845

申请日：1999-07-08

申请人： Ming Hsing Tsai ,  Shaulin Shue

发明人： Ming Hsing Tsai ,  Shaulin Shue

IPC分类号： H01L214763

CPC分类号： H01L21/76867 ,  H01L21/76849

摘要： A method for forming a damascene structure over tungsten plugs using nitridation of said tungsten plugs to provide better oxidation resistance, better adhesion properties and better copper diffusion barrier proerties. The process begins by providing a substrate structure having at least one device layer thereon and having a first dielectric layer overlying the device layer. The dielectric layer has tungsten plugs therein providing a conductive path between the surface of the dielectric layer and the device layer. The tungsten plugs are nitriduzed to form a WNx layer on top of the tungsten plugs. A second dielectric layer is deposited over the WNx layer and the first dielectric layer. The second dielectric layer is patterned to form a trench in the second dielectric layer; whereby the WNx layer is exposed in the trench. A barrier layer is formed in the trench. A metal layer is formed over the barrier layer. The metal layer and the second dielectric layer are planarized to form a damascene structure.

摘要翻译： 一种用于通过所述钨塞的氮化形成钨插塞的镶嵌结构以提供更好的抗氧化性，更好的粘附性和更好的铜扩散阻挡效应的方法。 该过程开始于提供其上具有至少一个器件层的衬底结构，并且具有覆盖器件层的第一介电层。 电介质层具有钨插塞，其中提供介电层的表面和器件层之间的导电路径。 钨丝塞被硝化以在钨丝塞顶部形成WNx层。 在WNx层和第一介电层上沉积第二介电层。 图案化第二电介质层以在第二电介质层中形成沟槽; 由此WNx层暴露在沟槽中。 在沟槽中形成阻挡层。 在阻挡层上形成金属层。 金属层和第二介电层被平坦化以形成镶嵌结构。

公开(公告)号：US20060189131A1

公开(公告)日：2006-08-24

申请号：US11067042

申请日：2005-02-24

申请人： Chung-Liang Chang ,  Shaulin Shue ,  Ming-Hsing Tsai

发明人： Chung-Liang Chang ,  Shaulin Shue ,  Ming-Hsing Tsai

IPC分类号： H01L21/44 ,  H01L21/302

CPC分类号： H01L21/3212 ,  H01L21/288 ,  H01L21/76849

摘要： A composition and process suitable for the passivation of metal lines, layers or surfaces, particularly for the passivation of copper in the fabrication of integrated circuit devices on wafer substrates. The process includes providing a novel composition solution in contact with a copper line, layer or surface on a substrate as the copper is subjected to chemical mechanical planarization (CMP). The composition includes reactive cations of a displacement metal which are suspended in solution and spontaneously displace the copper atoms in the copper in an oxidation/reduction reaction. The oxidized and displaced copper cations are carried away by the composition solution, and the newly-incorporated metal atoms in the copper substantially inhibit or prevent growth of copper oxides in the copper.

摘要翻译： 一种适用于金属线，层或表面的钝化的组合物和方法，特别是在晶片衬底上制造集成电路器件时铜的钝化。 该方法包括当铜经受化学机械平面化（CMP）时，提供与基底上的铜线，层或表面接触的新型组合物溶液。 组合物包括置换金属的反应性阳离子，其悬浮在溶液中并在氧化/还原反应中自发地置换铜中的铜原子。 氧化和置换的铜阳离子被组合物溶液带走，并且铜中新引入的金属原子基本上抑制或阻止铜中铜氧化物的生长。

公开(公告)号：US20050189233A1

公开(公告)日：2005-09-01

申请号：US10788571

申请日：2004-02-27

申请人： Chien-Hsueh Shih ,  Shaulin Shue

发明人： Chien-Hsueh Shih ,  Shaulin Shue

IPC分类号： C25D3/00 ,  C25D3/02 ,  C25D3/38 ,  H01L21/288 ,  H01L21/445

CPC分类号： C25D3/38 ,  C25D3/02

摘要： Electrochemical plating polymer additives and method which reduces metal overburden in an electroplated metal while optimizing gap fill capability are disclosed. The polymer additives are provided in an electrochemical plating bath solution and may include low cationic charge density co-polymers having aromatic and amine functional group monomers. The low cationic charge density polymers may include benzene or pyrollidone functional group monomers and imidazole or imidazole derivative functional group monomers.

摘要翻译： 公开了电镀聚合物添加剂和减少电镀金属中的金属覆盖层同时优化间隙填充能力的方法。 聚合物添加剂提供在电化学镀浴溶液中，并且可以包括具有芳族和胺官能团单体的低阳离子电荷密度共聚物。 低阳离子电荷密度聚合物可以包括苯或吡咯烷酮官能团单体和咪唑或咪唑衍生物官能团单体。

公开(公告)号：US06875692B1

公开(公告)日：2005-04-05

申请号：US10191825

申请日：2002-07-09

申请人： Chung-Liang Chang ,  Shaulin Shue

发明人： Chung-Liang Chang ,  Shaulin Shue

IPC分类号： H01L21/44 ,  H01L21/768

CPC分类号： H01L21/76877 ,  H01L21/76843 ,  H01L23/53233 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a copper structure, comprising the following steps. A substrate is provided. A patterned dielectric layer is formed over the substrate with the patterned dielectric layer having an opening exposing a portion of the substrate. The opening having exposed sidewalls. A Sn layer is formed directly upon the exposed sidewalls of the opening. A copper seed layer is formed upon the Sn layer within the opening. A bulk copper layer is formed over the copper seed layer, filling the opening. The structure is thermally annealed whereby Sn diffuses from the Sn layer into the copper seed layer and the bulk copper layer forming CuSn alloy within the copper seed layer and the bulk copper layer.

摘要翻译： 一种形成铜结构的方法，包括以下步骤。 提供基板。 图案化的介电层形成在衬底上，图案化的介电层具有露出衬底的一部分的开口。 该开口具有暴露的侧壁。 Sn层直接形成在开口的暴露的侧壁上。 在开口内的Sn层上形成铜籽晶层。 在铜籽晶层上形成块状铜层，填充开口。 该结构被热退火，由此Sn从Sn层扩散到铜籽晶层中，并且在铜籽晶层和块状铜层内形成CuSn合金的体铜层。

公开(公告)号：US07182849B2

公开(公告)日：2007-02-27

申请号：US10788571

申请日：2004-02-27

申请人： Chien-Hsueh Shih ,  Shaulin Shue

发明人： Chien-Hsueh Shih ,  Shaulin Shue

IPC分类号： C25D3/00 ,  C25D3/56

CPC分类号： C25D3/38 ,  C25D3/02

摘要： Electrochemical plating polymer additives and method which reduces metal overburden in an electroplated metal while optimizing gap fill capability are disclosed. The polymer additives are provided in an electrochemical plating bath solution and may include low cationic charge density co-polymers having aromatic and amine functional group monomers. The low cationic charge density polymers may include benzene or pyrollidone functional group monomers and imidazole or imidazole derivative functional group monomers.

摘要翻译： 公开了电镀聚合物添加剂和减少电镀金属中的金属覆盖层同时优化间隙填充能力的方法。 聚合物添加剂提供在电化学镀浴溶液中，并且可以包括具有芳族和胺官能团单体的低阳离子电荷密度共聚物。 低阳离子电荷密度聚合物可以包括苯或吡咯烷酮官能团单体和咪唑或咪唑衍生物官能团单体。

公开(公告)号：US20050199507A1

公开(公告)日：2005-09-15

申请号：US10796470

申请日：2004-03-09

申请人： Chien-Hsueh Shih ,  Minghsing Tsai ,  Shaulin Shue

发明人： Chien-Hsueh Shih ,  Minghsing Tsai ,  Shaulin Shue

IPC分类号： C25D3/00 ,  C25D3/38

CPC分类号： C25D3/38

摘要： A composition and method which is suitable to enhance the wetting of an electroplating bath solution on an electroplating surface. Optimum wetting of the electroplating bath solution to the electroplating surface results in an electroplated metal which is substantially devoid of surface pits and other structural defects and is characterized by enhanced gap fill capability. The composition includes a suppressor additive for the electroplating bath solution. The suppressor additive is a copolymer which includes various proportions of ethylene oxide monomer and propylene oxide monomer.

摘要翻译： 一种适合于增强电镀浴液在电镀表面上的润湿性的组合物和方法。 电镀浴液对电镀表面的最佳润湿导致电镀金属基本上没有表面凹坑和其他结构缺陷，其特征在于增强的间隙填充能力。 该组合物包括用于电镀浴溶液的抑制添加剂。 抑制添加剂是包含各种比例的环氧乙烷单体和环氧丙烷单体的共聚物。

公开(公告)号：US06849173B1

公开(公告)日：2005-02-01

申请号：US10170249

申请日：2002-06-12

申请人： Chung-Liang Chang ,  Shaulin Shue

发明人： Chung-Liang Chang ,  Shaulin Shue

IPC分类号： C25D5/02 ,  C25D5/34 ,  C25D5/48 ,  C25D7/12 ,  C25D11/32 ,  H01L21/768

CPC分类号： H01L21/76843 ,  C25D5/34 ,  C25D7/123 ,  H01L21/76861 ,  H01L21/76873

摘要： A method of forming an oxide free copper interconnect, comprising the following steps. A substrate is provided and a patterned dielectric layer is formed over the substrate. The patterned dielectric layer having an opening exposing a portion of the substrate. The opening having exposed sidewalls. A copper seed layer is formed over the sidewalls of the opening. The copper seed layer is subjected to an electrochemical technique to eliminate any copper oxide formed over the copper seed layer. A bulk copper layer is electrochemically plated over the copper-oxide-free copper seed layer, filling the opening and forming the oxide-free copper interconnect.

摘要翻译： 一种形成无氧化物铜互连的方法，包括以下步骤。 提供衬底并且在衬底上形成图案化的介电层。 图案化的介电层具有露出衬底的一部分的开口。 该开口具有暴露的侧壁。 在开口的侧壁上形成铜籽晶层。 铜种子层经受电化学技术以消除在铜籽晶层上形成的任何铜氧化物。 将大块铜层电化学镀在无氧化铜的铜籽晶层上，填充开口并形成无氧化物的铜互连。

公开(公告)号：US5702972A

公开(公告)日：1997-12-30

申请号：US789716

申请日：1997-01-27

申请人： Chaochieh Tsai ,  Shun-Liang Hsu ,  Shaulin Shue

发明人： Chaochieh Tsai ,  Shun-Liang Hsu ,  Shaulin Shue

IPC分类号： H01L21/285 ,  H01L21/336 ,  H01L21/8234 ,  H01L29/417 ,  H01L29/78 ,  H01L21/8238

CPC分类号： H01L29/6659 ,  H01L21/28518 ,  H01L21/823425 ,  H01L21/823443 ,  H01L29/41775 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/7833

摘要： A method for improving the source/drain resistance in the fabrication of an integrated circuit device is described. Gate electrodes are formed on the surface of a semiconductor substrate. Lightly doped regions are implanted into the semiconductor substrate using the gate electrodes as a mask. First spacers are formed on the sidewalls of the gate electrodes. Second spacers are formed on the sidewalls of the first spacers. Heavily doped source and drain regions are implanted into the semiconductor substrate using the gate electrodes and first and second spacers as a mask. Thereafter, the second spacers are removed. A titanium layer is deposited by chemical vapor deposition over the substrate whereby titanium silicide is formed overlying the gate electrodes and overlying the source and drain regions and whereby elemental titanium is deposited overlying the first spacers wherein the titanium silicide overlying the source and drain regions improves the source/drain resistance. The elemental titanium is removed. The substrate is annealed to transform all of the silicide into C54-phase TiSi.sub.2 and the fabrication of the integrated circuit device is completed.

摘要翻译： 描述了一种用于提高集成电路器件的制造中的源极/漏极电阻的方法。 栅电极形成在半导体衬底的表面上。 使用栅电极作为掩模将轻掺杂区域注入到半导体衬底中。 在栅电极的侧壁上形成第一间隔物。 第二间隔件形成在第一间隔件的侧壁上。 使用栅电极和第一和第二间隔物作为掩模将重掺杂的源极和漏极区域注入到半导体衬底中。 此后，去除第二间隔物。 通过化学气相沉积在衬底上沉积钛层，由此形成钛硅化物覆盖在栅极电极上并覆盖源极和漏极区域，并且由此将元素钛沉积在第一间隔物上，其中覆盖源极和漏极区域的硅化钛改善了 源极/漏极电阻。 去除元素钛。 将衬底退火以将所有硅化物转化为C54相TiSi2，并完成集成电路器件的制造。

公开(公告)号：US6077779A

公开(公告)日：2000-06-20

申请号：US083274

申请日：1998-05-22

申请人： Shaulin Shue ,  Mei-Yun Wang

发明人： Shaulin Shue ,  Mei-Yun Wang

IPC分类号： C23C14/04 ,  H01L21/285 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/44

CPC分类号： H01L21/76843 ,  C23C14/046 ,  C23C14/3492 ,  H01L21/2855 ,  H01L23/5226 ,  H01L23/53228 ,  H01L2924/0002

摘要： Methods are disclosed to provide a low-cost method of producing a refractory liner in submicron vias or trenches applying ionized metal plasma using physical vapor deposition (PVD). The refractory liner is deposited on the bottom and sidewalls of the submicron vias and trenches in a two step PVD, using first high pressure and then low pressure. By selecting adhesion layer and diffusion barrier materials such as tantalum, tantalum nitride or titanium nitride or alloys of these metals a uniform barrier is created which forms a suitable layer around copper metallization.

摘要翻译： 公开了提供一种在使用物理气相沉积（PVD）应用电离金属等离子体的亚微米通孔或沟槽中制造耐火材料衬里的低成本方法。 使用第一高压然后低压将耐火材料衬里沉积在亚微米通孔和沟槽的底部和侧壁上的两步PVD中。 通过选择粘合层和扩散阻挡材料如钽，氮化钽或氮化钛或这些金属的合金，产生均匀的屏障，其形成围绕铜金属化的合适的层。

公开(公告)号：US5970378A

公开(公告)日：1999-10-19

申请号：US899036

申请日：1997-07-23

申请人： Shaulin Shue ,  Chen-Hua Yu

发明人： Shaulin Shue ,  Chen-Hua Yu

IPC分类号： H01L21/285 ,  H01L21/768 ,  H01L21/44

CPC分类号： H01L21/76864 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76862 ,  Y10S438/909

摘要： A method for forming a titanium nitride layer within an integrated circuit. There is first provided a substrate. There is then formed over the substrate a virgin titanium nitride layer, where the virgin titanium nitride layer is formed through a chemical vapor deposition (CVD) method employing a tetrakis-diallylamido titanium source material without a halogen activator source material. The virgin titanium nitride layer is then annealed in a first plasma comprising nitrogen and hydrogen to form a refined titanium nitride layer. The refined titanium nitride layer is then annealed in a second plasma comprising nitrogen without hydrogen. Through the method there is formed a titanium nitride layer with superior step coverage, low resistivity and low impurities concentration.

摘要翻译： 一种在集成电路内形成氮化钛层的方法。 首先提供基板。 然后在衬底上形成原始氮化钛层，其中通过使用不具有卤素活化剂源材料的四 - 二烯丙基二氧化钛源材料的化学气相沉积（CVD）方法形成最初的氮化钛层。 然后将原始氮化钛层在包括氮和氢的第一等离子体中退火以形成精制的氮化钛层。 然后将精制的氮化钛层在包含氮气的第二等离子体中进行退火，无氢气。 通过该方法形成了具有优异的台阶覆盖率，低电阻率和低杂质浓度的氮化钛层。