公开(公告)号：US20070051993A1

公开(公告)日：2007-03-08

申请号：US11222923

申请日：2005-09-08

申请人： Ming-Che Ho ,  Yun-Pei Yang ,  Po-Chih Liu ,  Chia-Chien Lu

发明人： Ming-Che Ho ,  Yun-Pei Yang ,  Po-Chih Liu ,  Chia-Chien Lu

IPC分类号： H01L29/94 ,  G12B21/02

CPC分类号： H01L29/78609 ,  H01L29/4908 ,  H01L29/66757

摘要： A method of forming a thin film transistor is provided. First, an amorphous silicon layer is formed on a substrate. Next, a first gate insulating layer is formed on the amorphous silicon layer. Then, an annealing process is performed so that the amorphous silicon layer is melted and re-crystallized to form a poly silicon layer. Next, the first insulating layer and the poly silicon layer are patterned to form an island. Then, a gate electrode is formed on the island. Finally, a source region and a drain region are formed inside the poly silicon layer of the island. After the annealing process is performed, the boundary between the poly silicon layer and the gate insulating layer becomes denser, so that the current leakage of the thin film transistor can be reduced.

摘要翻译： 提供一种形成薄膜晶体管的方法。 首先，在基板上形成非晶硅层。 接下来，在非晶硅层上形成第一栅极绝缘层。 然后，进行退火处理，使得非晶硅层熔融并再结晶以形成多晶硅层。 接下来，对第一绝缘层和多晶硅层进行图案化以形成岛。 然后，在岛上形成栅电极。 最后，在岛的多晶硅层的内部形成源极区域和漏极区域。 在进行退火处理之后，多晶硅层和栅极绝缘层之间的边界变得更致密，从而可以减小薄膜晶体管的漏电流。

公开(公告)号：US20070054442A1

公开(公告)日：2007-03-08

申请号：US11223659

申请日：2005-09-08

申请人： Po-Chih Liu ,  Chun-Hsiang Fang ,  Ming-Che Ho ,  Chia-Chien Lu

发明人： Po-Chih Liu ,  Chun-Hsiang Fang ,  Ming-Che Ho ,  Chia-Chien Lu

IPC分类号： H01L21/84 ,  H01L21/00

CPC分类号： H01L29/458 ,  H01L29/665 ,  H01L29/66757 ,  H01L29/78675

摘要： A method for manufacturing a thin film transistor is provided. First, a poly-silicon island is formed on a substrate. Then, a patterned gate dielectric layer and a gate are formed on the poly-silicon island. Next, a source/drain is formed in the poly-silicon island beside the gate, wherein the region between the source/drain is a channel. Furthermore, a metal layer is formed on the substrate to cover the gate, the patterned gate dielectric layer and the poly-silicon island. Moreover, the metal layer above the source/drain will react with the poly-silicon island to form a silicide layer. Then, the non-reacted metal layer is removed. Afterwards, an inter-layer dielectric (ILD) is formed to cover the substrate. Then, the inter-layer dielectric above the source/drain is removed to form a source/drain contacting hole, wherein the silicide layer is used as an etching stopper.

摘要翻译： 提供了制造薄膜晶体管的方法。 首先，在基板上形成多晶硅岛。 然后，在多晶硅岛上形成图案化的栅介质层和栅极。 接下来，在栅极旁边的多晶硅岛中形成源极/漏极，其中源极/漏极之间的区域是沟道。 此外，在基板上形成金属层以覆盖栅极，图案化栅介质层和多晶硅岛。 此外，源极/漏极之上的金属层将与多晶硅岛反应形成硅化物层。 然后，除去未反应的金属层。 之后，形成层间电介质（ILD）以覆盖基板。 然后，除去源极/漏极之上的层间电介质以形成源极/漏极接触孔，其中硅化物层用作蚀刻停止层。

公开(公告)号：US07629209B2

公开(公告)日：2009-12-08

申请号：US11163397

申请日：2005-10-17

申请人： YewChung Sermon Wu ,  Chih-Yuan Hou ,  Guo-Ren Hu ,  Po-Chih Liu

发明人： YewChung Sermon Wu ,  Chih-Yuan Hou ,  Guo-Ren Hu ,  Po-Chih Liu

IPC分类号： H01L21/84

CPC分类号： H01L21/2026 ,  H01L21/02532 ,  H01L27/1285 ,  H01L29/66757 ,  Y10S438/977

摘要： A method for fabricating polysilicon film is disclosed. First, a first substrate is provided, wherein a plurality of sunken patterns has been formed on the front surface of the first substrate. Then, a second substrate is provided and an amorphous polysilicon film is formed on the second substrate. Next, the amorphous polysilicon film formed on the second substrate is in contact with the front surface of the first substrate. The amorphous polysilicon film is transferred into a polysilicon film by performing an annealing process. Then, the first substrate and the second substrate are separated from each other. This method reduces the cost and the time for fabricating polysilicon film.

摘要翻译： 公开了制造多晶硅膜的方法。 首先，提供第一基板，其中在第一基板的前表面上形成有多个下沉图案。 然后，提供第二基板，在第二基板上形成非晶多晶硅膜。 接下来，形成在第二基板上的非晶多晶硅膜与第一基板的前表面接触。 通过进行退火处理将非晶多晶硅膜转移到多晶硅膜中。 然后，第一基板和第二基板彼此分离。 该方法降低了制造多晶硅膜的成本和时间。

公开(公告)号：US07013560B2

公开(公告)日：2006-03-21

申请号：US10707015

申请日：2003-11-14

申请人： Po-Chih Liu

发明人： Po-Chih Liu

IPC分类号： H05K3/02 ,  H05K3/10

CPC分类号： H01L21/4857 ,  H01L21/4853 ,  H05K3/108 ,  H05K3/243 ,  H05K3/28 ,  H05K3/421 ,  H05K3/4602 ,  H05K2201/09481 ,  H05K2201/09563 ,  H05K2201/0959 ,  H05K2201/096 ,  H05K2203/054 ,  H05K2203/1461 ,  Y10T29/49117 ,  Y10T29/49126 ,  Y10T29/49128 ,  Y10T29/49155 ,  Y10T29/49165

摘要： A substrate comprises at least a semi-finished substrate, a circuit line, a contact and a solder mask layer. The circuit line and the contact are formed on the semi-finished substrate. The circuit line and the contact are connected together non-integrally. The solder mask layer is formed over the semi-finished substrate to cover the circuit line. The solder mask layer has an opening in which the contact is formed.

摘要翻译： 基板至少包括半成品基板，电路线，接触件和焊接掩模层。 电路线和触点形成在半成品基板上。 电路线和触点非整体连接在一起。 焊接掩模层形成在半成品衬底上以覆盖电路线。 焊接掩模层具有形成接触的开口。

公开(公告)号：US20120181008A1

公开(公告)日：2012-07-19

申请号：US13008593

申请日：2011-01-18

申请人： I-Yung LIN ,  Po-Chih Liu

发明人： I-Yung LIN ,  Po-Chih Liu

IPC分类号： F28F7/00

CPC分类号： F28D15/0275 ,  F28F1/30 ,  F28F2275/08 ,  H01L23/4006 ,  H01L23/427 ,  H01L2924/0002 ,  H01L2924/00

摘要： A heat sink clip device, configured to secure a heat sink to a heat generating unit, the heat sink clip comprises a thermal conductive board and a plurality of locking members. The thermal conductive board is attached to the heat generating unit. The thermal conductive board may include a plurality of connecting apertures. Each connecting aperture may include a bigger diameter portion and a smaller diameter portion connected with the bigger diameter portion. A plurality of locking members may be engaged with the corresponding connecting aperture. Each locking members may include a threaded member and an elastic unit sheathed on the threaded member. The threaded member may include a bar portion, a head portion and a blocking ring. The head portion and the blocking ring are respectively on both sides of the bar portion. The diameter of the bar portion may be a little bit smaller than the size of the smaller diameter portion. The outside diameter of the blocking ring may be a little bit smaller than the size of the bigger diameter portion. The inside diameter of the elastic unit may be a little bit bigger than the outside diameter of the blocking ring. The bar portion and the blocking ring may go through the bigger diameter portion and then may be secured to the smaller diameter portion. The elastic unit may be suppressed between the threaded member head and the thermal conductive board. This creates a heat sink clip device.

摘要翻译： 一种散热夹具装置，其构造成将散热器固定到发热单元，所述散热片夹包括导热板和多个锁定构件。 导热板连接到发热单元。 导热板可以包括多个连接孔。 每个连接孔可以包括与较大直径部分连接的较大直径部分和较小直径部分。 多个锁定构件可以与相应的连接孔接合。 每个锁定构件可以包括螺纹构件和套在螺纹构件上的弹性单元。 螺纹构件可以包括杆部，头部和阻挡环。 头部和阻挡环分别在杆部的两侧。 杆部分的直径可以比较小直径部分的尺寸稍微小些。 阻挡环的外径可以比较大直径部分的尺寸稍微小些。 弹性单元的内径可以比阻塞环的外径稍大一些。 杆部分和阻挡环可以穿过较大直径部分，然后可以固定到较小直径部分。 可以在螺纹构件头和导热板之间抑制弹性单元。 这将创建一个散热片夹装置。

公开(公告)号：US20060110868A1

公开(公告)日：2006-05-25

申请号：US11023436

申请日：2004-12-29

申请人： Chia-Nan Shen ,  Cheng-Nan Hsieh ,  Po-Chih Liu

发明人： Chia-Nan Shen ,  Cheng-Nan Hsieh ,  Po-Chih Liu

IPC分类号： H01L21/84

CPC分类号： H01L29/66757 ,  H01L29/78621

摘要： A method is disclosed to make a lightly doped drain of a low-temperature poly-silicon thin film transistor. Nitrogen is implanted during steps of doping the source and the drain so as to suppress the spreading of the other types of dope so that the poly-silicon layer forms a shallow interface lightly doped drain after annealing. Implantation of nitrogen takes place before or after the other types of dope. Nitrogen is implanted to a depth no greater than that of the other types of dope. The present is simple, improves hot carrier effect and repairs flaws in the poly-silicon layer.

摘要翻译： 公开了一种制造低温多晶硅薄膜晶体管的轻掺杂漏极的方法。 在掺杂源极和漏极的步骤期间注入氮气，以抑制其它类型的掺杂物的扩散，使得多晶硅层在退火之后形成浅界面轻掺杂漏极。 在其他类型的涂料之前或之后进行氮的植入。 氮被植入到不大于其它类型的掺杂剂的深度的深度。 本发明简单，改善了热载体效应，并修复了多晶硅层的缺陷。

公开(公告)号：US20070087485A1

公开(公告)日：2007-04-19

申请号：US11163397

申请日：2005-10-17

申请人： YewChung Sermon Wu ,  Chih-Yuan Hou ,  Guo-Ren Hu ,  Po-Chih Liu

发明人： YewChung Sermon Wu ,  Chih-Yuan Hou ,  Guo-Ren Hu ,  Po-Chih Liu

IPC分类号： H01L21/84 ,  H01L21/00

CPC分类号： H01L21/2026 ,  H01L21/02532 ,  H01L27/1285 ,  H01L29/66757 ,  Y10S438/977

摘要： A method for fabricating polysilicon film is disclosed. First, a first substrate is provided, wherein a plurality of sunken patterns has been formed on the front surface of the first substrate. Then, a second substrate is provided and an amorphous polysilicon film is formed on the second substrate. Next, the amorphous polysilicon film formed on the second substrate is in contact with the front surface of the first substrate. The amorphous polysilicon film is transferred into a polysilicon film by performing an annealing process. Then, the first substrate and the second substrate are separated from each other. This method reduces the cost and the time for fabricating polysilicon film.

摘要翻译： 公开了制造多晶硅膜的方法。 首先，提供第一基板，其中在第一基板的前表面上形成有多个下沉图案。 然后，提供第二基板，在第二基板上形成非晶多晶硅膜。 接下来，形成在第二基板上的非晶多晶硅膜与第一基板的前表面接触。 通过进行退火处理将非晶多晶硅膜转移到多晶硅膜中。 然后，第一基板和第二基板彼此分离。 该方法降低了制造多晶硅膜的成本和时间。