公开(公告)号：US20070054442A1

公开(公告)日：2007-03-08

申请号：US11223659

申请日：2005-09-08

申请人： Po-Chih Liu ,  Chun-Hsiang Fang ,  Ming-Che Ho ,  Chia-Chien Lu

发明人： Po-Chih Liu ,  Chun-Hsiang Fang ,  Ming-Che Ho ,  Chia-Chien Lu

IPC分类号： H01L21/84 ,  H01L21/00

CPC分类号： H01L29/458 ,  H01L29/665 ,  H01L29/66757 ,  H01L29/78675

摘要： A method for manufacturing a thin film transistor is provided. First, a poly-silicon island is formed on a substrate. Then, a patterned gate dielectric layer and a gate are formed on the poly-silicon island. Next, a source/drain is formed in the poly-silicon island beside the gate, wherein the region between the source/drain is a channel. Furthermore, a metal layer is formed on the substrate to cover the gate, the patterned gate dielectric layer and the poly-silicon island. Moreover, the metal layer above the source/drain will react with the poly-silicon island to form a silicide layer. Then, the non-reacted metal layer is removed. Afterwards, an inter-layer dielectric (ILD) is formed to cover the substrate. Then, the inter-layer dielectric above the source/drain is removed to form a source/drain contacting hole, wherein the silicide layer is used as an etching stopper.

摘要翻译： 提供了制造薄膜晶体管的方法。 首先，在基板上形成多晶硅岛。 然后，在多晶硅岛上形成图案化的栅介质层和栅极。 接下来，在栅极旁边的多晶硅岛中形成源极/漏极，其中源极/漏极之间的区域是沟道。 此外，在基板上形成金属层以覆盖栅极，图案化栅介质层和多晶硅岛。 此外，源极/漏极之上的金属层将与多晶硅岛反应形成硅化物层。 然后，除去未反应的金属层。 之后，形成层间电介质（ILD）以覆盖基板。 然后，除去源极/漏极之上的层间电介质以形成源极/漏极接触孔，其中硅化物层用作蚀刻停止层。

公开(公告)号：US20070051956A1

公开(公告)日：2007-03-08

申请号：US11162159

申请日：2005-08-31

申请人： Chih-Jen Shih ,  Chun-Hsiang Fang ,  Te-Hua Teng ,  Chia-Chien Lu

发明人： Chih-Jen Shih ,  Chun-Hsiang Fang ,  Te-Hua Teng ,  Chia-Chien Lu

IPC分类号： H01L29/00

CPC分类号： H01L29/78645 ,  H01L29/78624

摘要： A thin film transistor having a substrate, a gate insulating layer, a double-gate structure, a first lightly doped region, and a second lightly doped region. The substrate has a source region and a drain region disposed on its opposite sides, a heavily doped region between source region and drain region, a first channel region between heavily doped region and source region and a second channel region between heavily doped region and drain region. The gate insulating layer covers the substrate. The double-gate structure has a first gate and a second gate disposed on gate insulating layer above the first and the second channel region, respectively. The first lightly doped region is disposed between second channel region and heavily doped region and the second lightly doped region between second channel region and drain region. The length of second lightly doped region is greater than that of first lightly doped region.

摘要翻译： 一种具有衬底，栅极绝缘层，双栅极结构，第一轻掺杂区和第二轻掺杂区的薄膜晶体管。 衬底具有设置在其相对侧上的源极区域和漏极区域，源极区域和漏极区域之间的重掺杂区域，重掺杂区域和源极区域之间的第一沟道区域以及重掺杂区域和漏极区域之间的第二沟道区域 。 栅极绝缘层覆盖基板。 双栅结构具有分别设置在第一和第二沟道区上方的栅极绝缘层上的第一栅极和第二栅极。 第一轻掺杂区域设置在第二沟道区域和重掺杂区域之间，第二轻掺杂区域设置在第二沟道区域和漏极区域之间。 第二轻掺杂区域的长度大于第一轻掺杂区域的长度。

公开(公告)号：US20070057332A1

公开(公告)日：2007-03-15

申请号：US11598844

申请日：2006-11-13

申请人： Shih-Chang Chang ,  De-Hua Deng ,  Chun-Hsiang Fang ,  Yaw-Ming Tsai

发明人： Shih-Chang Chang ,  De-Hua Deng ,  Chun-Hsiang Fang ,  Yaw-Ming Tsai

IPC分类号： H01L29/76

CPC分类号： H01L27/1214 ,  H01L27/127 ,  H01L29/42384 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78645

摘要： A thin film transistor (TFT) with a self-aligned lightly-doped region and a fabrication method thereof. An active layer has a channel region, a first doped region and a second doped region, in which the first doped region is disposed between the channel region and the second doped region. A gate insulating layer formed overlying the active layer has a central region, a shielding region and an extending region. The shielding region is disposed between the central region and the extending region, the central region covers the channel region, the shielding region covers the first doped region, and the extending region covers the second doped region. The shielding region is thicker than the extending region. A gate layer is formed overlying the gate insulating layer, covers the central region and exposes the shielding region and the extending region.

摘要翻译： 具有自对准轻掺杂区域的薄膜晶体管（TFT）及其制造方法。 有源层具有沟道区，第一掺杂区和第二掺杂区，其中第一掺杂区设置在沟道区和第二掺杂区之间。 形成在有源层上的栅极绝缘层具有中心区域，屏蔽区域和延伸区域。 屏蔽区域设置在中心区域和延伸区域之间，中心区域覆盖沟道区域，屏蔽区域覆盖第一掺杂区域，延伸区域覆盖第二掺杂区域。 屏蔽区域比扩展区域厚。 形成覆盖栅极绝缘层的栅极层，覆盖中心区域并使屏蔽区域和延伸区域露出。

公开(公告)号：US20060114190A1

公开(公告)日：2006-06-01

申请号：US10904547

申请日：2004-11-16

申请人： Chun-Hsiang Fang ,  Shih-Chang Chang

发明人： Chun-Hsiang Fang ,  Shih-Chang Chang

IPC分类号： G09G3/30

CPC分类号： G09G3/3233 ,  G09G2300/0465 ,  G09G2320/0242 ,  G09G2320/043 ,  H01L27/3216

摘要： An active matrix organic electro-luminescence device array comprising first sub-pixel regions and second sub-pixel regions defined by scan lines and data lines is provided. Each first sub-pixel region has a first light emitting device, a first control unit and a second control unit therein while each second sub-pixel region has a second light emitting device therein. The first control unit is electrically connected to the first light emitting device for driving the first light emitting device. The second control unit is electrically connected to the second light emitting device for driving the second light emitting device. The second light emitting device having poor light emitting efficiency per unit area is disposed in the second sub-pixel region for increasing its light emitting area so that the first and second light emitting devices may have uniform brightness when drive with the same driving current.

摘要翻译： 提供了包括由扫描线和数据线限定的第一子像素区域和第二子像素区域的有源矩阵有机电致发光器件阵列。 每个第一子像素区域具有第一发光器件，第一控制单元和第二控制单元，而每个第二子像素区域中具有第二发光器件。 第一控制单元电连接到用于驱动第一发光器件的第一发光器件。 第二控制单元电连接到用于驱动第二发光装置的第二发光装置。 在第二子像素区域设置具有每单位面积的发光效率差的第二发光器件，以增加其发光面积，使得当以相同的驱动电流驱动时，第一和第二发光器件可以具有均匀的亮度。

公开(公告)号：US08531101B2

公开(公告)日：2013-09-10

申请号：US13330695

申请日：2011-12-20

申请人： Chih-Hung Tsai ,  Yuan-Chen Chin ,  Chun-Liang Lin ,  Chun-Hsiang Fang

发明人： Chih-Hung Tsai ,  Yuan-Chen Chin ,  Chun-Liang Lin ,  Chun-Hsiang Fang

IPC分类号： H01L51/52

CPC分类号： H01L27/3246 ,  H01L27/3276 ,  H01L51/5268 ,  H01L51/5275

摘要： An organic electroluminescent (OEL) lighting element disposed on a substrate includes a first electrode, a second electrode, an OEL layer, an auxiliary electrode, a patterned scattering layer, and a patterned dielectric layer. The second electrode is opposite to the first electrode having a first refraction index. The OEL layer is disposed between the first electrode and the second electrode. The auxiliary electrode is disposed between the first electrode and the second electrode, electrically connected to the first electrode, and separated from the OEL layer by a gap. The patterned scattering layer is disposed between the first electrode and the auxiliary electrode, covers the auxiliary electrode, and has a second refraction index greater than or substantially equal to the first refraction index. The patterned dielectric layer is disposed between the auxiliary electrode and the second electrode, covers the auxiliary electrode, and is disposed between the auxiliary electrode and the OEL layer.

摘要翻译： 设置在基板上的有机电致发光（OEL）照明元件包括第一电极，第二电极，OEL层，辅助电极，图案化散射层和图案化电介质层。 第二电极与具有第一折射率的第一电极相对。 OEL层设置在第一电极和第二电极之间。 辅助电极设置在第一电极和第二电极之间，与第一电极电连接，并且与OEL层隔开间隙。 图案化散射层设置在第一电极和辅助电极之间，覆盖辅助电极，并且具有大于或基本上等于第一折射率的第二折射率。 图案化电介质层设置在辅助电极和第二电极之间，覆盖辅助电极，并且设置在辅助电极和OEL层之间。

公开(公告)号：US20130071650A1

公开(公告)日：2013-03-21

申请号：US13337289

申请日：2011-12-27

申请人： Chan-Jui Liu ,  Chih-Hung Tsai ,  Chun-Hsiang Fang

发明人： Chan-Jui Liu ,  Chih-Hung Tsai ,  Chun-Hsiang Fang

IPC分类号： B28B7/14 ,  B32B27/00

CPC分类号： G09F9/301 ,  B32B37/26 ,  B32B2037/268 ,  B32B2457/20 ,  Y10T428/261 ,  Y10T428/31721

摘要： A fabricating method of a flexible display is provided. A release layer is formed on a carrier substrate. The release layer is patterned to form a patterned release layer. A flexible substrate is formed on the patterned release layer, wherein the flexible substrate covers the patterned release layer and a portion of the flexible substrate contacts the carrier substrate. An adhesive force between the patterned release layer and the flexible substrate is larger than an adhesive force between the patterned release layer and the carrier substrate. A device layer is formed on the flexible substrate. A display layer is formed on the device layer. The flexible substrate and patterned release layer are cut simultaneously. The patterned release layer being cut is separated from the carrier substrate, wherein the flexible substrate, the device layer and the display layer which have been cut are sequentially disposed on the separated patterned release layer.

摘要翻译： 提供了一种柔性显示器的制造方法。 剥离层形成在载体基板上。 图案化剥离层以形成图案化的剥离层。 在图案化的剥离层上形成柔性基底，其中柔性基底覆盖图案化的释放层，柔性基底的一部分接触载体基底。 图案化剥离层和柔性基底之间的粘合力大于图案化剥离层和载体基底之间的粘合力。 在柔性基板上形成器件层。 在器件层上形成显示层。 柔性基板和图案化剥离层同时被切割。 被切割的图案化剥离层与载体基板分离，其中已经被切割的柔性基板，器件层和显示层依次设置在分离的图案化释放层上。

公开(公告)号：US20090206737A1

公开(公告)日：2009-08-20

申请号：US12322039

申请日：2009-01-27

申请人： Hanson Liu ,  Ryan Lee ,  Chun-Hsiang Fang

发明人： Hanson Liu ,  Ryan Lee ,  Chun-Hsiang Fang

IPC分类号： H01J1/62 ,  H01L33/00

CPC分类号： H01L27/1251 ,  H01L27/1214 ,  H01L27/3262 ,  H01L27/3265 ,  H01L27/3269 ,  H01L29/04

摘要： The invention discloses an organic electroluminescent device includes a substrate. The substrate includes a first control area and a second control area, a polysilicon active layer disposed on the first control area, and a first conductivity type source/drain area disposed in the polysilicon active layer. A first dielectric layer is disposed on the polysilicon active layer serving as a first gate dielectric layer, a first gate and a second gate is disposed on the polysilicon active layer and the second control area, respectively, wherein the first gate and the first conductivity type source/drain area constitute a first conductivity type thin film transistor serving as a switch element. A second dielectric layer disposed on the first gate and the second gate serves as a second gate dielectric layer, a micro-crystal silicon active layer disposed over the second gate.

摘要翻译： 本发明公开了一种包括基板的有机电致发光器件。 衬底包括第一控制区域和第二控制区域，设置在第一控制区域上的多晶硅有源层以及设置在多晶硅有源层中的第一导电类型源极/漏极区域。 第一电介质层设置在用作第一栅介质层的多晶硅有源层上，第一栅极和第二栅极分别设置在多晶硅有源层和第二控制区上，其中第一栅极和第一导电类型 源极/漏极区域构成用作开关元件的第一导电型薄膜晶体管。 设置在第一栅极和第二栅极上的第二电介质层用作第二栅极电介质层，设置在第二栅极上的微晶硅有源层。

公开(公告)号：US20070159442A1

公开(公告)日：2007-07-12

申请号：US11306813

申请日：2006-01-12

申请人： Huang-Chung Cheng ,  Ya-Hsiang Tai ,  Bo-Ting Chen ,  Chun-Hsiang Fang

发明人： Huang-Chung Cheng ,  Ya-Hsiang Tai ,  Bo-Ting Chen ,  Chun-Hsiang Fang

IPC分类号： G09G3/36

CPC分类号： G09G3/3685 ,  G09G3/20 ,  G09G2310/0291 ,  G09G2310/08 ,  G09G2320/02

摘要： An analog output buffer circuit for a flat panel display is provided for improving an output signal distortion. The circuit includes a transistor, a current source, an input capacitor, an upper switch, a lower switch, a first switch, a second switch and a third switch. In which, the transistor and the current source are electrically connected in series between a first power supply and a second power supply. The current source provides a compensatory current for the transistor when a leakage current occurs. The upper switch and the first switch are turned on during the first period, and the lower switch and the second switch are turn on during the second period, in which the second period is after the first period. Those switches eliminate the drawback of different voltage levels between the input signal and the output signal obtained from the output buffer circuit inputted by the input signal.

摘要翻译： 提供了一种用于平板显示器的模拟输出缓冲电路，用于改善输出信号失真。 电路包括晶体管，电流源，输入电容器，上开关，下开关，第一开关，第二开关和第三开关。 其中，晶体管和电流源串联电连接在第一电源和第二电源之间。 当发生漏电流时，电流源为晶体管提供补偿电流。 上部开关和第一开关在第一时段期间导通，并且下部开关和第二开关在第二时段期间接通，其中第二周期在第一周期之后。 这些开关消除了输入信号与从输入信号输入的输出缓冲电路获得的输出信号之间的不同电压电平的缺点。

公开(公告)号：US20130115426A1

公开(公告)日：2013-05-09

申请号：US13292599

申请日：2011-11-09

申请人： Chun-Hsiang Fang ,  Yu-Ling Lin

发明人： Chun-Hsiang Fang ,  Yu-Ling Lin

IPC分类号： B32B3/00 ,  B05D5/12 ,  G03F7/20 ,  C23C16/44 ,  H05K3/00 ,  B05D3/02 ,  B05D5/00 ,  C23C14/34

CPC分类号： H01L27/1266 ,  Y10T29/4913

摘要： A method for manufacturing a flexible electronic device includes forming a first layer on a substrate to define a first area and a second area surrounding the first area such that the substrate is exposed at least partially in the first area and the first layer is in the second area, forming a second layer on the first area and the first layer over the second area such that an adhesion force between the second layer and the substrate in the first area is weaker than that between the second and first layers in the second area, forming an electronic device layer (EDL) on the second layer over the first area, the EDL defining a boundary projectively within the first area, and separating the EDL from the substrate by cutting through the first and second layers along a contour within the first area but not less than the boundary.

摘要翻译： 一种用于制造柔性电子器件的方法包括在衬底上形成第一层以限定第一区域和围绕第一区域的第二区域，使得衬底至少部分地暴露在第一区域中，并且第一层处于第二区域中 区域，在所述第一区域上形成第二层，在所述第二区域上形成所述第一层，使得所述第一区域中的所述第二层和所述衬底之间的粘附力弱于所述第二区域中的所述第二层和所述第一层之间的粘附力，形成 在所述第一区域上的所述第二层上的电子器件层（EDL），所述EDL在所述第一区域内投影地界定边界，以及沿着所述第一区域内的轮廓切割所述第一层和所述第二层， 不小于边界。

公开(公告)号：US08436819B2

公开(公告)日：2013-05-07

申请号：US12609812

申请日：2009-10-30

申请人： Wan-Ting Huang ,  Chun-Hsiang Fang ,  Chung-Chun Lee

发明人： Wan-Ting Huang ,  Chun-Hsiang Fang ,  Chung-Chun Lee

IPC分类号： G06F3/041 ,  G09G3/38

CPC分类号： G06F3/041 ,  G02F1/133305 ,  G02F1/13338 ,  G02F1/167 ,  G09G3/3208

摘要： A flexible touch display apparatus includes a flexible substrate, a display unit, a flexible insulation layer and a touch sensor layer. The display unit is disposed on the flexible substrate, the flexible insulation layer is disposed on the display unit, and the touch sensor layer is formed on the flexible insulation layer. The flexible touch display apparatus is light in weight, thin in thickness, flexible and unbreakable.

摘要翻译： 柔性触摸显示装置包括柔性基板，显示单元，柔性绝缘层和触摸传感器层。 显示单元设置在柔性基板上，柔性绝缘层设置在显示单元上，并且触摸传感器层形成在柔性绝缘层上。 柔性触摸显示装置重量轻，厚度薄，柔软牢固。