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公开(公告)号：US08709528B2
公开(公告)日：2014-04-29
申请号：US13338885
申请日：2011-12-28
IPC分类号： C23C16/00
CPC分类号： H01L21/68785 , C23C14/50 , C23C14/54 , C23C16/4582 , C23C16/52 , H01L21/67098 , H01L21/67288 , H01L21/6831 , Y10T29/49998
摘要： In a wafer processing method and a wafer processing system, a first property on a back side of a wafer is measured. The back side of the wafer is supported on a multi-zone chuck having a plurality of zones with controllable clamping forces. The wafer is secured to the multi-zone chuck by controlling the clamping forces in the corresponding zones in accordance with measured values of the first property in the zones.
摘要翻译： 在晶片处理方法和晶片处理系统中，测量晶片背面的第一特性。 晶片的背面被支撑在具有可控夹紧力的多个区域的多区域卡盘上。 通过根据区域中的第一属性的测量值控制相应区域中的夹紧力将晶片固定到多区域卡盘。
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公开(公告)号：US20130045606A1
公开(公告)日：2013-02-21
申请号：US13210998
申请日：2011-08-16
IPC分类号： H01L21/306 , B08B3/08 , B08B3/02
CPC分类号： H01L21/67051 , B08B3/024
摘要： A method includes providing a wafer and providing a first spray bar spaced a distance from the wafer. A first spray is dispensed from the first spray bar onto a first portion (e.g., half) of the wafer. Thereafter, the wafer is rotated. A second spray is dispensed from the first spray bar onto a second portion (e.g., half) of the rotated wafer. In embodiments, a plurality of spray bars are positioned above the wafer. One or more of the spray bars may be tunable in separation distance and/or angle of dispensing.
摘要翻译： 一种方法包括提供晶片并提供与晶片间隔开一定距离的第一喷杆。 将第一喷雾从第一喷雾棒分配到晶片的第一部分（例如一半）上。 此后，晶片旋转。 从第一喷杆将第二喷雾分配到旋转的晶片的第二部分（例如，一半）上。 在实施例中，多个喷杆位于晶片上方。 喷雾棒中的一个或多个可以以分离距离和/或分配角度来调节。
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公开(公告)号：US08657963B2
公开(公告)日：2014-02-25
申请号：US13240583
申请日：2011-09-22
IPC分类号： B08B1/00
CPC分类号： H01L21/67046 , H01L21/67051
摘要： The present disclosure provides a method and apparatus for cleaning a semiconductor wafer. In an embodiment of the method, a single wafer cleaning apparatus is provided and a wafer is positioned in the apparatus. A first chemical spray is dispensed onto a front surface of the wafer. A back surface of the wafer is cleaned while dispensing the first chemical spray. The cleaning of the back surface may include a brush and spray of cleaning fluids. An apparatus operable to clean the front surface and the back surface of a single semiconductor wafer is also described.
摘要翻译： 本公开提供了一种用于清洁半导体晶片的方法和装置。 在该方法的一个实施例中，提供单个晶片清洁装置，并且将晶片定位在装置中。 将第一化学喷雾分配到晶片的前表面上。 在分配第一化学喷雾的同时清洁晶片的背面。 后表面的清洁可以包括刷子和喷射清洁流体。 还描述了可操作以清洁单个半导体晶片的前表面和后表面的装置。
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公开(公告)号：US20130074872A1
公开(公告)日：2013-03-28
申请号：US13240583
申请日：2011-09-22
CPC分类号： H01L21/67046 , H01L21/67051
摘要： The present disclosure provides a method and apparatus for cleaning a semiconductor wafer. In an embodiment of the method, a single wafer cleaning apparatus is provided and a wafer is positioned in the apparatus. A first chemical spray is dispensed onto a front surface of the wafer. A back surface of the wafer is cleaned while dispensing the first chemical spray. The cleaning of the back surface may include a brush and spray of cleaning fluids. An apparatus operable to clean the front surface and the back surface of a single semiconductor wafer is also described.
摘要翻译： 本公开提供了一种用于清洁半导体晶片的方法和装置。 在该方法的一个实施例中，提供单个晶片清洁装置，并将晶片定位在装置中。 将第一化学喷雾分配到晶片的前表面上。 在分配第一化学喷雾的同时清洁晶片的背面。 后表面的清洁可以包括刷子和喷射清洁流体。 还描述了可操作以清洁单个半导体晶片的前表面和后表面的装置。
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公开(公告)号：US20130068248A1
公开(公告)日：2013-03-21
申请号：US13233568
申请日：2011-09-15
CPC分类号： H01L21/02057 , H01L21/67051
摘要： The present disclosure provides a method including providing a chamber having a first inlet and a second inlet. A solution of a de-ionized (DI) water and an acid (e.g., a dilute acid) is provided to the chamber via the first inlet. A carrier gas (e.g., N2) is provided to the chamber via the second inlet. The solution and the carrier gas are in the chamber and then from the chamber onto a single semiconductor wafer. In an embodiment, the solution includes a dilute HCl and DI water.
摘要翻译： 本公开提供了一种方法，包括提供具有第一入口和第二入口的室。 通过第一入口向腔室提供去离子（DI）水和酸（例如稀酸）的溶液。 载气（例如，N2）经由第二入口提供给腔室。 溶液和载气在室中，然后从室到单个半导体晶片。 在一个实施方案中，溶液包括稀HCl和去离子水。
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公开(公告)号：US09299593B2
公开(公告)日：2016-03-29
申请号：US13210998
申请日：2011-08-16
CPC分类号： H01L21/67051 , B08B3/024
摘要： A method includes providing a wafer and providing a first spray bar spaced a distance from the wafer. A first spray is dispensed from the first spray bar onto a first portion (e.g., half) of the wafer. Thereafter, the wafer is rotated. A second spray is dispensed from the first spray bar onto a second portion (e.g., half) of the rotated wafer. In embodiments, a plurality of spray bars are positioned above the wafer. One or more of the spray bars may be tunable in separation distance and/or angle of dispensing.
摘要翻译： 一种方法包括提供晶片并提供与晶片间隔开一定距离的第一喷杆。 将第一喷雾从第一喷雾棒分配到晶片的第一部分（例如一半）上。 此后，晶片旋转。 从第一喷杆将第二喷雾分配到旋转的晶片的第二部分（例如，一半）上。 在实施例中，多个喷杆位于晶片上方。 喷雾棒中的一个或多个可以以分离距离和/或分配角度来调节。
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公开(公告)号：US20130034966A1
公开(公告)日：2013-02-07
申请号：US13198420
申请日：2011-08-04
申请人： Ming-Hsi Yeh , Kuo-Sheng Chuang , Ying-Hsueh Chang Chien , Chi-Ming Yang , Chi-Wen Liu , Chin-Hsiang Lin
发明人： Ming-Hsi Yeh , Kuo-Sheng Chuang , Ying-Hsueh Chang Chien , Chi-Ming Yang , Chi-Wen Liu , Chin-Hsiang Lin
IPC分类号： H01L21/306 , B05B1/00
CPC分类号： H01L21/32134 , H01L21/31111 , H01L21/67051 , H01L21/6708
摘要： A method of semiconductor fabrication including providing a semiconductor wafer and dispensing a first chemical spray onto the wafer using a first nozzle and dispensing a second chemical spray using a second nozzle onto the wafer. These dispensing may be performed simultaneously. The method may further include moving the first and second nozzle. The first and second nozzle may provide the first and second chemical spray having at least one different property. For example, different chemical compositions, concentrations, temperatures, angles of dispensing, or flow rate. A chemical dispersion apparatus providing two nozzles which are operable to be separately controlled is also provided.
摘要翻译： 一种半导体制造方法，包括提供半导体晶片并使用第一喷嘴将第一化学喷雾分配到晶片上，并且使用第二喷嘴将第二化学喷雾分配到晶片上。 这些分配可以同时进行。 该方法还可以包括移动第一和第二喷嘴。 第一和第二喷嘴可以提供具有至少一种不同性质的第一和第二化学喷雾。 例如，不同的化学成分，浓度，温度，分配角度或流速。 还提供了提供可分开控制的两个喷嘴的化学分散装置。
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8.发明授权Method of forming undoped/in-situ doped/undoped polysilicon sandwich for floating gate application 失效用于浮栅应用的无掺杂/原位掺杂/未掺杂多晶硅夹层的形成方法
公开(公告)号：US5840607A
公开(公告)日：1998-11-24
申请号：US729996
申请日：1996-10-11
申请人： Jun-Ker Yeh , Long-Sheng Yeou , Kuo-Sheng Chuang , Siu-Han Liao
发明人： Jun-Ker Yeh , Long-Sheng Yeou , Kuo-Sheng Chuang , Siu-Han Liao
IPC分类号： H01L21/336 , H01L29/423 , H01L29/51
CPC分类号： H01L29/66825 , H01L29/42324 , H01L29/511
摘要： The present invention provides a method for forming a transistor having a stacked gate electrode structure with two gates; a lower floating gate and an upper control gate. The floating gate is formed of three polysilicon layers--undoped/doped/undoped polysilicon layers. A substrate is provided having a tunnel oxide layer 20. Then sequentially a first undoped, first doped, and second undoped polysilicon layers 22,24,26 are formed over the tunnel oxide layer thereby forming a lower floating gate layer 22, 24, 26. An intergate dielectric layer 28,30,32 is then formed over the second undoped polysilicon layer 26. Next, an upper control gate 36 and a cap oxide layer are formed over the intergate dielectric layer 28,30,32. The stacked two gate electrode structure is formed by patterning the above mentioned layers. Then spaced source and drain regions 44 are formed on opposite sides of the stacked gate structure thereby completing the transistor.
摘要翻译： 本发明提供了一种用于形成具有两个栅极的堆叠栅电极结构的晶体管的方法; 下部浮动栅极和上部控制栅极。 浮置栅极由三个多晶硅层 - 未掺杂/掺杂/未掺杂的多晶硅层形成。 提供具有隧道氧化物层20的衬底。然后依次在隧道氧化物层上形成第一未掺杂的，第一掺杂的和第二未掺杂的多晶硅层22,24,26，从而形成下浮动栅层22,24,26。 然后在第二未掺杂多晶硅层26上形成隔间电介质层28,30,32。接下来，在栅间电介质层28,30,32上方形成上控制栅极36和盖氧化物层。 层叠的两个栅电极结构通过图案化上述层而形成。 然后在层叠的栅极结构的相对侧上形成间隔的源极和漏极区域44，从而完成晶体管。
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公开(公告)号：US20060105967A1
公开(公告)日：2006-05-18
申请号：US10992178
申请日：2004-11-18
申请人： Li-Wei Hsu , Su-Chen Chang , Chen-Hsiang Shen , Yuan-Xiu Liao , Kuo-Sheng Chuang
发明人： Li-Wei Hsu , Su-Chen Chang , Chen-Hsiang Shen , Yuan-Xiu Liao , Kuo-Sheng Chuang
IPC分类号： A61K31/7048 , A61K31/353
CPC分类号： A61K31/353 , A61K31/7048
摘要： The use of flavone derivatives of formula (I) in which R1, R2, R3, R4 and R5 independently represent hydrogen, hydroxy or an ester group; R6 represents hydrogen, hydroxy, an ester group or an O-glycoside group such as O-rhamnose, O-glucoside, O-retinoside or O-xyloside; and represents a single bond or a double bond; or the pharmaceutically acceptable salts thereof as TNFα antagonists or inhibitors.
摘要翻译： 使用式（I）的黄酮衍生物，其中R 1，R 2，R 3，R 4， >和R 5独立地表示氢，羟基或酯基; R 6表示氢，羟基，酯基或O-糖苷基，例如O-鼠李糖，O-葡萄糖苷，O-鲸蜡酮或O-木糖苷; “img id =”custom-character-00001“he =”2.79mm“wi =”6.35mm“file =”US20060105967A1-20060518-P00900.TIF“alt =”custom character“img-content =”character“img- format =“tif”/>表示单键或双键; 或其药学上可接受的盐作为TNFα拮抗剂或抑制剂。
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10.发明申请Herbal composition for treatment of arthritic disorders, skin inflammatory disorders and pain 审中-公开用于治疗关节炎疾病，皮肤炎症性疾病和疼痛的草药组合物公开(公告)号：US20060263449A1
公开(公告)日：2006-11-23
申请号：US11134140
申请日：2005-05-20
申请人： Li-Wei Hsu , Su-Chen Chang , Kuo-Sheng Chuang , Hsuan-Yi Lin , Jyh-chong Chen
发明人： Li-Wei Hsu , Su-Chen Chang , Kuo-Sheng Chuang , Hsuan-Yi Lin , Jyh-chong Chen
IPC分类号： A61K36/185
CPC分类号： A61K36/19
摘要： The present invention provides a method for treating arthritic disorders, skin inflammatory disorders and pain, comprising administering to a subject an extract of Andrographis paniculata Nees, and also provides a herbal composition used therefor that comprises the extract of Andrographis paniculata Nees.
摘要翻译： 本发明提供了治疗关节炎疾病，皮肤炎症性疾病和疼痛的方法，其包括对受试者施用穿心莲的提取物，并且还提供了包含穿心莲提取物的草药组合物。
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