公开(公告)号：US20140062494A1

公开(公告)日：2014-03-06

申请号：US13597251

申请日：2012-08-28

申请人： Ming-Wei Lin ,  Ming-Hsien Lee ,  Ching-Liang Lin

发明人： Ming-Wei Lin ,  Ming-Hsien Lee ,  Ching-Liang Lin

IPC分类号： G01R31/36

CPC分类号： G01R31/3658 ,  G01R19/16542 ,  H01M10/4207 ,  H01M10/482

摘要： A battery condition estimating apparatus for a battery pack having a plurality of battery cells connected in series includes an analog channel switching circuit and a battery gas gauge circuit. The analog channel switching circuit has a plurality of input ports and an output port, wherein the input ports are coupled to the battery cells via a plurality of analog channels, respectively, and the analog channel switching circuit is arranged to couple the output port to a selected input port of the input ports for allowing the output port N5 to be coupled to a selected battery via a selected analog channel. The battery gas gauge circuit is coupled to the output port of the analog channel switching circuit, and used for estimating a battery condition of the battery pack by monitoring the selected battery cell via the selected analog channel.

摘要翻译： 具有串联连接的多个电池单元的电池组的电池状态估计装置包括模拟通道切换电路和电池气量计电路。 模拟通道切换电路具有多个输入端口和输出端口，其中输入端口分别经由多个模拟通道耦合到电池单元，并且模拟通道切换电路被布置为将输出端口耦合到 输入端口的选择输入端口，用于允许输出端口N5经由选择的模拟通道耦合到所选择的电池。 电池气量计电路耦合到模拟通道切换电路的输出端口，并用于通过经由选择的模拟通道监视所选择的电池单元来估计电池组的电池状况。

公开(公告)号：US09007067B2

公开(公告)日：2015-04-14

申请号：US13597251

申请日：2012-08-28

申请人： Ming-Wei Lin ,  Ming-Hsien Lee ,  Ching-Liang Lin

发明人： Ming-Wei Lin ,  Ming-Hsien Lee ,  Ching-Liang Lin

IPC分类号： G01N27/416 ,  H02J7/00 ,  H02J7/04 ,  G01R31/36 ,  H01M10/42 ,  H01M10/48 ,  G01R19/165

CPC分类号： G01R31/3658 ,  G01R19/16542 ,  H01M10/4207 ,  H01M10/482

摘要： A battery condition estimating apparatus for a battery pack having a plurality of battery cells connected in series includes an analog channel switching circuit and a battery gas gauge circuit. The analog channel switching circuit has a plurality of input ports and an output port, wherein the input ports are coupled to the battery cells via a plurality of analog channels, respectively, and the analog channel switching circuit is arranged to couple the output port to a selected input port of the input ports for allowing the output port N5 to be coupled to a selected battery via a selected analog channel. The battery gas gauge circuit is coupled to the output port of the analog channel switching circuit, and used for estimating a battery condition of the battery pack by monitoring the selected battery cell via the selected analog channel.

摘要翻译： 具有串联连接的多个电池单元的电池组的电池状态估计装置包括模拟通道切换电路和电池气量计电路。 模拟通道切换电路具有多个输入端口和输出端口，其中输入端口分别经由多个模拟通道耦合到电池单元，并且模拟通道切换电路被布置为将输出端口耦合到 输入端口的选择输入端口，用于允许输出端口N5经由选择的模拟通道耦合到所选择的电池。 电池气量计电路耦合到模拟通道切换电路的输出端口，并用于通过经由选择的模拟通道监视所选择的电池单元来估计电池组的电池状况。

公开(公告)号：US20110300650A1

公开(公告)日：2011-12-08

申请号：US13207889

申请日：2011-08-11

申请人： Shih-Peng Chen ,  Chia-Hua Chan ,  Horng-Jou Wang ,  Ching-Liang Lin ,  Chii-Chang Chen ,  Cheng-Yi Liu ,  Huang-Kun Chen

发明人： Shih-Peng Chen ,  Chia-Hua Chan ,  Horng-Jou Wang ,  Ching-Liang Lin ,  Chii-Chang Chen ,  Cheng-Yi Liu ,  Huang-Kun Chen

IPC分类号： H01L33/60

CPC分类号： H01L33/44 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/405 ,  H01L2933/0091

摘要： A light-emitting diode (LED) apparatus includes a thermoconductive substrate, a thermoconductive adhesive layer, an epitaxial layer, a current spreading layer and a micro- or nano-roughing structure. The thermoconductive adhesive layer is disposed on the thermoconductive substrate. The epitaxial layer is disposed opposite to the thermoconductive adhesive layer and has a first semiconductor layer, an active layer and a second semiconductor layer. The current spreading layer is disposed between the second semiconductor layer of the epitaxial layer and the thermoconductive adhesive layer. The micro- or nano-roughing structure is disposed on the first semiconductor layer of the epitaxial layer. In addition, a manufacturing method of the LED apparatus is also disclosed.

摘要翻译： 发光二极管（LED）装置包括导热基板，导热粘合剂层，外延层，电流扩散层和微型或纳米粗糙结构。 导热粘合剂层设置在导热基板上。 外延层与导电粘合剂层相对设置，并具有第一半导体层，有源层和第二半导体层。 电流扩散层设置在外延层的第二半导体层和导热粘合剂层之间。 微结构或纳米粗糙结构设置在外延层的第一半导体层上。 此外，还公开了一种LED装置的制造方法。

公开(公告)号：US20080283503A1

公开(公告)日：2008-11-20

申请号：US11748478

申请日：2007-05-14

申请人： Cheng-yi Liu ,  Yi-ju Chen ,  Shih-Chieh Hsu ,  Ching-Liang Lin

发明人： Cheng-yi Liu ,  Yi-ju Chen ,  Shih-Chieh Hsu ,  Ching-Liang Lin

IPC分类号： B44C1/22

CPC分类号： H01L33/22 ,  H01L33/0062

摘要： A method of processing nature pattern on expitaxial substrate, unlike the conventional method of processing regular pattern on expitaxial substrate (such as sapphire substrate) by lithography, wet etches a sapphire substrate directly to obtain a nature pattern, so as to simplify the fabrication process. Compared with the conventional way of processing pattern sapphire, the nature pattern sapphire substrate produced by the method can avoid voids between the interface of sapphire and GaN and apply this technology to a wired bond LED structure to increase the sidewall light extraction and improve the texture of the sapphire surface of a flip chip LED structure. In addition, this method also can be applied to a thin-GaN LED for achieving the surface texture after the sapphire is removed by laser.

摘要翻译： 在外延衬底上处理自然图案的方法，与通过光刻在外延衬底（例如蓝宝石衬底）上处理规则图案的常规方法不同，直接湿法蚀刻蓝宝石衬底以获得自然图案，从而简化制造工艺。 与传统的蓝宝石处理方式相比，通过该方法生产的蓝宝石蓝宝石衬底可以避免蓝宝石和GaN界面之间的空隙，并将此技术应用于有线键合LED结构，增加侧壁光提取，改善纹理 蓝宝石表面的倒装芯片LED结构。 此外，该方法也可以应用于在通过激光去除蓝宝石之后实现表面纹理的薄GaN LED。

公开(公告)号：US20090072259A1

公开(公告)日：2009-03-19

申请号：US12193271

申请日：2008-08-18

申请人： Shih-Peng Chen ,  Chia-Hua Chan ,  Horng-Jou Wang ,  Ching-Liang Lin ,  Chii-Chang Chen ,  Chen-Yi Liu ,  Huang-Kun Chen

发明人： Shih-Peng Chen ,  Chia-Hua Chan ,  Horng-Jou Wang ,  Ching-Liang Lin ,  Chii-Chang Chen ,  Chen-Yi Liu ,  Huang-Kun Chen

IPC分类号： H01L33/00

CPC分类号： H01L33/44 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/405 ,  H01L2933/0091

摘要： A light-emitting diode (LED) apparatus includes a thermoconductive substrate, a thermoconductive adhesive layer, an epitaxial layer, a current spreading layer and a micro- or nano-roughing structure. The thermoconductive adhesive layer is disposed on the thermoconductive substrate. The epitaxial layer is disposed opposite to the thermoconductive adhesive layer and has a first semiconductor layer, an active layer and a second semiconductor layer. The current spreading layer is disposed between the second semiconductor layer of the epitaxial layer and the thermoconductive adhesive layer. The micro- or nano-roughing structure is disposed on the first semiconductor layer of the epitaxial layer. In addition, a manufacturing method of the LED apparatus is also disclosed.

摘要翻译： 发光二极管（LED）装置包括导热基板，导热粘合剂层，外延层，电流扩散层和微型或纳米粗糙结构。 导热粘合剂层设置在导热基板上。 外延层与导电粘合剂层相对设置，并具有第一半导体层，有源层和第二半导体层。 电流扩散层设置在外延层的第二半导体层和导热粘合剂层之间。 微结构或纳米粗糙结构设置在外延层的第一半导体层上。 此外，还公开了一种LED装置的制造方法。

公开(公告)号：US20080003707A1

公开(公告)日：2008-01-03

申请号：US11501015

申请日：2006-08-09

申请人： Cheng-Yi Liu ,  Chia-Hsien Chou ,  Ching-Liang Lin

发明人： Cheng-Yi Liu ,  Chia-Hsien Chou ,  Ching-Liang Lin

IPC分类号： H01L33/00

CPC分类号： H01L33/405 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/40

摘要： The present invention provides a method to fabricate a diode whose heat stability is improved. The diode has a layer of high reflective ohmic contact and an alloy metal is used in the layer. With the alloy metal used in the layer, the heat stability of the diode is improved.

摘要翻译： 本发明提供一种制造热稳定性提高的二极管的方法。 二极管具有高反射欧姆接触层，在该层中使用合金金属。 使用该层中使用的合金金属，二极管的热稳定性得到改善。

公开(公告)号：US20140291613A1

公开(公告)日：2014-10-02

申请号：US13851953

申请日：2013-03-27

申请人： Ching-Liang Lin ,  Shen-Jie Wang ,  Yen-Lin Lai

发明人： Ching-Liang Lin ,  Shen-Jie Wang ,  Yen-Lin Lai

IPC分类号： H01L29/15 ,  H01L29/205 ,  H01L29/06

CPC分类号： H01L29/155 ,  H01L29/2003 ,  H01L33/06

摘要： A multiple quantum well structure including a plurality of well-barrier pairs arranged along a direction is provided. Each of the well-barrier pairs includes a barrier layer and a well layer adjacent to the barrier layer. The barrier layers and the well layers of the well-barrier pairs are disposed alternately. A ratio of a thickness of the well layer in the direction to a thickness of the barrier layer in the direction in each well-barrier pair is a well-barrier thickness ratio, and the well-barrier thickness ratios of a part of the well-barrier pairs gradually increase along the direction.

摘要翻译： 提供了包括沿着一个方向布置的多个阱 - 屏障对的多量子阱结构。 每个阱屏障对包括阻挡层和邻近阻挡层的阱层。 阱屏障对的阻挡层和阱层交替设置。 阱层的厚度在阻挡层的厚度方向上的阻挡层厚度比为良好的阻挡层厚度比，阱壁的厚度比， 屏障对沿着方向逐渐增加。

公开(公告)号：US08766307B2

公开(公告)日：2014-07-01

申请号：US13778161

申请日：2013-02-27

申请人： Yen-Lin Lai ,  Shen-Jie Wang ,  Yu-Chu Li ,  Jyun-De Wu ,  Ching-Liang Lin ,  Kuan-Yung Liao

发明人： Yen-Lin Lai ,  Shen-Jie Wang ,  Yu-Chu Li ,  Jyun-De Wu ,  Ching-Liang Lin ,  Kuan-Yung Liao

IPC分类号： H01L33/60

CPC分类号： H01L33/60 ,  H01L33/20 ,  H01L2933/0091

摘要： A light emitting diode device includes an epitaxial substrate, at least one passivation structure, at least one void, a semiconductor layer, a first type doping semiconductor layer, a light-emitting layer and a second type doping semiconductor layer. The passivation structure is disposed on the epitaxial substrate and has an outer surface. The void is located at the passivation structure and at least covering 50% of the outer surface of the passivation structure. The semiconductor layer is disposed on the epitaxial substrate and encapsulating the passivation structure and the void. The first type doping semiconductor layer is disposed on the semiconductor layer. The light-emitting layer is disposed on the first type doping semiconductor layer. The second type doping semiconductor layer is disposed on the light emitting layer.

摘要翻译： 发光二极管器件包括外延衬底，至少一个钝化结构，至少一个空穴，半导体层，第一类型掺杂半导体层，发光层和第二类型掺杂半导体层。 钝化结构设置在外延衬底上并具有外表面。 空隙位于钝化结构处，并且至少覆盖钝化结构的外表面的50％。 半导体层设置在外延衬底上并封装钝化结构和空隙。 第一类掺杂半导体层设置在半导体层上。 发光层设置在第一型掺杂半导体层上。 第二种掺杂半导体层设置在发光层上。

公开(公告)号：US20090146166A1

公开(公告)日：2009-06-11

申请号：US12060878

申请日：2008-04-02

申请人： Cheng-yi Liu ,  Yung-Hsun Lin ,  Ching-Liang Lin ,  Po-Han Chen ,  Chia-Lun Chang ,  Pen-Ko Chou ,  Yi-Ju Chen ,  You-Hsian Chang

发明人： Cheng-yi Liu ,  Yung-Hsun Lin ,  Ching-Liang Lin ,  Po-Han Chen ,  Chia-Lun Chang ,  Pen-Ko Chou ,  Yi-Ju Chen ,  You-Hsian Chang

IPC分类号： H01L33/00 ,  F21V8/00

CPC分类号： G02B6/122 ,  G02B6/13 ,  H01L33/0079 ,  H01L33/405

摘要： A structure applying an optical wave guide layer includes an incident light source and at least one optical wave guide layer. The structure can be in any geometric shape such as a planar, hemispherical or conical shape. The geometric structure is designed for collecting and guiding the incident light source in specific directions. The light can be guided by a combination of materials having different optical properties. The incident angle of the collected light is controlled and the materials are selected to effectively overcome a drawback of the prior art that a portion of the light of some optical components cannot be extracted by a light extraction method.

摘要翻译： 应用光波导层的结构包括入射光源和至少一个光波导层。 该结构可以是任何几何形状，例如平面，半球形或圆锥形。 几何结构设计用于在特定方向上收集和引导入射光源。 光可以由具有不同光学性质的材料的组合引导。 控制所收集的光的入射角，并且选择材料以有效地克服现有技术的缺点，即一些光学部件的光的一部分不能通过光提取方法提取。

公开(公告)号：US20130277697A1

公开(公告)日：2013-10-24

申请号：US13778161

申请日：2013-02-27

申请人： Yen-Lin Lai ,  Shen-Jie Wang ,  Yu-Chu Li ,  Jyun-De Wu ,  Ching-Liang Lin ,  Kuan-Yung Liao

发明人： Yen-Lin Lai ,  Shen-Jie Wang ,  Yu-Chu Li ,  Jyun-De Wu ,  Ching-Liang Lin ,  Kuan-Yung Liao

IPC分类号： H01L33/60

CPC分类号： H01L33/60 ,  H01L33/20 ,  H01L2933/0091

摘要： A light emitting diode device includes an epitaxial substrate, at least one passivation structure, at least one void, a semiconductor layer, a first type doping semiconductor layer, a light-emitting layer and a second type doping semiconductor layer. The passivation structure is disposed on the epitaxial substrate and has an outer surface. The void is located at the passivation structure and at least covering 50% of the outer surface of the passivation structure. The semiconductor layer is disposed on the epitaxial substrate and encapsulating the passivation structure and the void. The first type doping semiconductor layer is disposed on the semiconductor layer. The light-emitting layer is disposed on the first type doping semiconductor layer. The second type doping semiconductor layer is disposed on the light emitting layer.

摘要翻译： 发光二极管器件包括外延衬底，至少一个钝化结构，至少一个空穴，半导体层，第一类型掺杂半导体层，发光层和第二类型掺杂半导体层。 钝化结构设置在外延衬底上并具有外表面。 空隙位于钝化结构处，并且至少覆盖钝化结构的外表面的50％。 半导体层设置在外延衬底上并封装钝化结构和空隙。 第一类掺杂半导体层设置在半导体层上。 发光层设置在第一型掺杂半导体层上。 第二种掺杂半导体层设置在发光层上。