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    Photoresist composition
    2.
    发明授权
    Photoresist composition 有权
    光刻胶组成

    公开(公告)号：US09507259B2

    公开(公告)日：2016-11-29

    申请号：US13482595

    申请日：2012-05-29

    申请人： Mingqi Li ,  Emad Aqad ,  Cong Liu ,  Ching-Lung Chen ,  Shintaro Yamada ,  Cheng-bai Xu ,  Joseph Mattia

    发明人： Mingqi Li ,  Emad Aqad ,  Cong Liu ,  Ching-Lung Chen ,  Shintaro Yamada ,  Cheng-bai Xu ,  Joseph Mattia

    IPC分类号： G03F7/004 ,  G03F7/039

    CPC分类号： G03F7/004 ,  G03F7/0045 ,  G03F7/0397

    摘要： A photoresist composition comprises an acid-sensitive polymer, and a cyclic sulfonium compound having the formula: (Ra)1—(Ar)—S+(—CH2—)m·−O3S—(CRb2)n-(L)p-X wherein each Ra is independently a substituted or unsubstituted C1-30 alkyl group, C6-30 aryl group, C7-30 aralkyl group, or combination comprising at least one of the foregoing, Ar is a monocyclic, polycyclic, or fused polycyclic C6-30 aryl group, each Rb is independently H, F, a linear or branched C1-10 fluoroalkyl or a linear or branched heteroatom-containing C1-10 fluoroalkyl, L is a C1-30 linking group optionally comprising a heteroatom comprising O, S, N, F, or a combination comprising at least one of the foregoing heteroatoms, X is a substituted or unsubstituted, C5 or greater monocyclic, polycyclic or fused polycyclic cycloaliphatic group, optionally comprising a heteroatom comprising O, S, N, F, or a combination comprising at least one of the foregoing, and 1 is an integer of 0 to 4, m is an integer of 3 to 20, n is an integer of 0 to 4, and p is an integer of 0 to 2.

    PHOTORESIST COMPOSITION
    5.
    发明申请
    PHOTORESIST COMPOSITION 有权
    光电组合物

    公开(公告)号：US20130137038A1

    公开(公告)日：2013-05-30

    申请号：US13482595

    申请日：2012-05-29

    申请人： Mingqi Li ,  Amad Aqad ,  Cong Liu ,  Ching-Lung Chen ,  Shintaro Yamada ,  Cheng-bai Xu ,  Joseph Mattia

    发明人： Mingqi Li ,  Amad Aqad ,  Cong Liu ,  Ching-Lung Chen ,  Shintaro Yamada ,  Cheng-bai Xu ,  Joseph Mattia

    IPC分类号： G03F7/004

    CPC分类号： G03F7/004 ,  G03F7/0045 ,  G03F7/0397

    摘要： A photoresist composition comprises an acid-sensitive polymer, and a cyclic sulfonium compound having the formula: (Ra)1—(Ar)—S+(—CH2—)m·−O3S—(CRb2)n-(L)p-X wherein each Ra is independently a substituted or unsubstituted C1-30 alkyl group, C6-30 aryl group, C7-30 aralkyl group, or combination comprising at least one of the foregoing, Ar is a monocyclic, polycyclic, or fused polycyclic C6-30 aryl group, each Rb is independently H, F, a linear or branched C1-10 fluoroalkyl or a linear or branched heteroatom-containing C1-10 fluoroalkyl, L is a C1-30 linking group optionally comprising a heteroatom comprising O, S, N, F, or a combination comprising at least one of the foregoing heteroatoms, X is a substituted or unsubstituted, C5 or greater monocyclic, polycyclic or fused polycyclic cycloaliphatic group, optionally comprising a heteroatom comprising O, S, N, F, or a combination comprising at least one of the foregoing, and 1 is an integer of 0 to 4, m is an integer of 3 to 20, n is an integer of 0 to 4, and p is an integer of 0 to 2.

    摘要翻译： 光致抗蚀剂组合物包含酸敏感性聚合物和具有下式的环状锍化合物：（Ra）1-（Ar）-S +（ - CH2-）m·-O3S-（CRb2）n-（L） R a独立地是取代或未取代的C 1-30烷基，C 6-30芳基，C 3-30芳烷基或包含至少一个前述的组合，Ar是单环，多环或稠合多环C 6-30芳基 ，每个R b独立地是H，F，直链或支链C 1-10氟代烷基或含有直链或支链含杂原子的C 1-10氟代烷基，L是任选地包含O，S，N，F 或包含至少一个前述杂原子的组合，X是取代或未取代的C5或更大单环，多环或稠合的多环脂环族基团，任选地包含包含O，S，N，F的杂原子，或包含在 上述中的至少一个，1为0〜4的整数，m为3〜20的整数，n为In 0〜4的整数，p为0〜2的整数。

    Copolymers and photoresist compositions comprising same
    6.
    发明授权
    Copolymers and photoresist compositions comprising same 失效
    包含其的共聚物和光致抗蚀剂组合物

    公开(公告)号：US06849381B2

    公开(公告)日：2005-02-01

    申请号：US10408522

    申请日：2003-04-07

    申请人： George G. Barclay ,  Stefan J. Caporale ,  Wang Yueh ,  Zhibiao Mao ,  Joseph Mattia

    发明人： George G. Barclay ,  Stefan J. Caporale ,  Wang Yueh ,  Zhibiao Mao ,  Joseph Mattia

    IPC分类号： C08F220/18 ,  C08F222/06 ,  C08F232/00 ,  C08L33/06 ,  C08L35/00 ,  C08L45/00 ,  G03F7/004 ,  G03F7/039 ,  H01L21/027

    CPC分类号： G03F7/0397 ,  G03F7/0395 ,  Y10S430/106 ,  Y10S430/111

    摘要： The present invention includes polymers and photoresist compositions that comprise the polymers as a resin binder component. Photoresists of the invention include chemically-amplified positive-acting resists that can be effectively imaged at short wavelengths such as sub-200 nm, particularly 193 nm. Polymers of the invention suitably contain 1) photoacid labile groups that preferably contain an alicyclic moiety; 2) a polymerized electron-deficient monomer; 3) a polymerized cyclic olefin moiety. Particularly preferred polymers of the invention are tetrapolymers or pentapolymers, preferably with differing polymerized norbornene units.

    摘要翻译： 本发明包括聚合物和光致抗蚀剂组合物，其包含作为树脂粘合剂组分的聚合物。 本发明的光刻胶包括可以在短波长例如亚200nm，特别是193nm下有效成像的化学放大的正性抗蚀剂。 本发明的聚合物适当地含有1）优选含有脂环族部分的光酸不稳定基团; 2）聚合电子缺陷单体; 3）聚合的环烯烃部分。 本发明特别优选的聚合物是四聚物或五元共聚物，优选具有不同聚合的降冰片烯单元。

    Copolymers and photoresist compositions comprising same
    7.
    发明授权
    Copolymers and photoresist compositions comprising same 失效
    包含其的共聚物和光致抗蚀剂组合物

    公开(公告)号：US06777157B1

    公开(公告)日：2004-08-17

    申请号：US09567814

    申请日：2000-05-09

    申请人： George G. Barclay ,  Stefan J. Caporale ,  Wang Yueh ,  Zhibiao Mao ,  Joseph Mattia

    发明人： George G. Barclay ,  Stefan J. Caporale ,  Wang Yueh ,  Zhibiao Mao ,  Joseph Mattia

    IPC分类号： G03F7004

    CPC分类号： G03F7/0397 ,  G03F7/0395 ,  Y10S430/106 ,  Y10S430/111

    摘要： The present invention includes polymers and photoresist compositions that comprise the polymers as a resin binder component. Photoresists of the invention include chemically-amplified positive-acting resists that can be effectively imaged at short wavelengths such as sub-200 nm, particularly 193 nm. Polymers of the invention suitably contain 1) photoacid labile groups that preferably contain an alicyclic moiety; 2) a polymerized electron-deficient monomer; 3) a polymerized cyclic olefin moiety. Particularly preferred polymers of the invention are tetrapolymers or pentapolymers, preferably with differing polymerized norbornene units.

    摘要翻译： 本发明包括聚合物和光致抗蚀剂组合物，其包含作为树脂粘合剂组分的聚合物。 本发明的光刻胶包括可以在短波长例如亚200nm，特别是193nm下有效成像的化学放大的正性抗蚀剂。 本发明的聚合物适当地含有1）优选含有脂环族部分的光酸不稳定基团; 2）聚合电子缺陷单体; 3）聚合的环烯烃部分。 本发明特别优选的聚合物是四聚物或五元共聚物，优选具有不同聚合的降冰片烯单元。