摘要:
When image processing is performed, the present invention increases the speed of processing for an individual scanning line constituting an image, and improves the throughput while suppressing the required memory area. The present invention is an image processor for performing image processing in parallel using a plurality of processors, wherein when an individual scanning line is divided into a plurality of partial areas, at least one of the plurality of processors is allocated to each of the partial areas for at lest one scanning line constituting an image, and image processing is performed in parallel. As a memory area for storing the image processing result, the image processor comprises memory areas for the number of scanning lines, which is less than the number of the plurality of processors.
摘要:
When image processing is performed, the present invention increases the speed of processing for an individual scanning line constituting an image, and improves the throughput while suppressing the required memory area. The present invention is an image processor for performing image processing in parallel using a plurality of processors, wherein when an individual scanning line is divided into a plurality of partial areas, at least one of the plurality of processors is allocated to each of the partial areas for at lest one scanning line constituting an image, and image processing is performed in parallel. As a memory area for storing the image processing result, the image processor comprises memory areas for the number of scanning lines, which is less than the number of the plurality of processors.
摘要:
An infrared imaging element according to an embodiment includes: a semiconductor substrate including a stacked structure of a silicon first substrate, and a first insulation film, first cavities being provided on a surface of the first substrate; an infrared detection unit provided in the semiconductor substrate and including, detection cells provided respectively over the first cavities, each of the detection cells having diodes and a second insulation film, the first insulation film converting incident infrared rays to heat, the diodes converting the heat obtained by the first insulation film to an electric signal, a third insulation film having a top face located at a greater distance from the semiconductor substrate as compared with a top face of the second insulation film; and a second substrate provided over the third insulation film. A second cavity is formed between the second substrate and the infrared detection unit.
摘要:
An infrared imaging element according to an embodiment includes: a semiconductor substrate including a stacked structure of a silicon first substrate, and a first insulation film, first cavities being provided on a surface of the first substrate; an infrared detection unit provided in the semiconductor substrate and including, detection cells provided respectively over the first cavities, each of the detection cells having diodes and a second insulation film, the first insulation film converting incident infrared rays to heat, the diodes converting the heat obtained by the first insulation film to an electric signal, a third insulation film having a top face located at a greater distance from the semiconductor substrate as compared with a top face of the second insulation film; and a second substrate provided over the third insulation film. A second cavity is formed between the second substrate and the infrared detection unit.
摘要:
An uncooled infrared imaging element includes a pixel region, a device region, and a support substrate. The pixel region includes heat-sensitive pixels. The heat-sensitive pixels are arranged in a matrix and change current-voltage characteristics thereof in accordance with receiving amounts of infrared. The device region includes at least one of a drive circuit and a readout circuit which includes a MOS transistor. The drive circuit drives the heat-sensitive pixels. The readout circuit detects signals of the heat-sensitive pixels. The support substrate is provided with a cavity region to be under pixel region and the MOS transistor.
摘要:
According to one embodiment, an imaging device includes a substrate, a photodetecting portion, a circuit portion and a through interconnect. The substrate has a first major surface, a second major surface on a side opposite to the first major surface, a recess portion provided on the first major surface and retreated in a first direction going from the first major surface to the second major surface, and a through hole communicating with the first major surface and the second major surface and extending in the first direction. The photodetecting portion is provided above the recess portion and away from the substrate. The circuit portion is electrically connected to the photodetecting portion and provided on the first major surface. The through interconnect is electrically connected to the circuit portion and provided inside the through hole. The recess portion has a first inclined surface. The through hole has a second inclined surface.
摘要:
By using an intaglio plate for holding a pattern formed by a developing agent, a transfer device for transferring patterns developed on the intaglio plate to a transfer object medium, and a baking chamber for eliminating an electrode layer after transfer or heightening resistance thereof, the patterns developed on the intaglio plate are transferred onto the electrode layer disposed at the opposite side of the transfer object medium, and then heated in the baking chamber, whereby the electrode layer is eliminated or heightened in resistance.
摘要:
A filter circuit has first and second varistors, a resistance, an input terminal, an output terminal, and a ground terminal. The resistance is connected between the first and second varistors. The input terminal is connected to a junction between the first varistor and resistance through a first coil. The output terminal is connected to a junction between the second varistor and resistance through a second coil. The ground terminal is connected to a side of the first varistor opposite from the resistance and a side of the second varistor opposite from the resistance.
摘要:
When superimposing toner images of a plurality of colors on an image supporting member to form a color image, a free phase ion in a precedent image is removed without distorting the toner image precedently formed on the image supporting member, thereby improving reproducibility of image dots of the toner images having second and subsequent colors to obtain a high-definition color image with high contrast.
摘要:
A method for conveniently detecting binding between the von Willebrand factor and glycoprotein Ib and a means to be used therein. The von Willebrand factor fixed in a reactor immobilized in a reaction vessel in the presence of bottrocetin is bound to a chimeric protein constructed by fusing the carboxyl terminal of a partial protein containing the von Willebrand factor-binding site of glycoprotein Ib with the amino terminal of the Fc region of an immunoglobulin molecule. Then the Fc region of the above immunoglobulin molecule is detected to thereby detect the binding between the von Willebrand factor and the glycoprotein Ib or inhibition of this binding.