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    Bidirectional photothyristor chip, light-fired coupler and solid state relay
    1.
    发明授权
    Bidirectional photothyristor chip, light-fired coupler and solid state relay 有权
    双向光闸晶体管，发光耦合器和固态继电器

    公开(公告)号：US07157747B2

    公开(公告)日：2007-01-02

    申请号：US10731087

    申请日：2003-12-10

    Applicant: Mitsuru Mariyama ,  Masaru Kubo

    Inventor： Mitsuru Mariyama ,  Masaru Kubo

    IPC: H01L31/111

    CPC classification number: H01L31/1113 ,  H01L27/144

    Abstract: A channel isolation region 42 is formed over the entire width of an N-type silicon substrate 41, and photothyristors, in each of which an anode diffusion region 43, a P-gate diffusion region 44, a cathode diffusion region 45 are formed parallel to the channel isolation region 42 over almost the entire width of the N-type silicon substrate 41, are formed in a left-hand portion 40a and in a right-hand portion 40b and are wired inversely parallel. Thus, the inter-channel movement of residual holes during commutation is restrained by the channel isolation region 42, by which commutation failure is suppressed to improve a commutation characteristic. Further, an operating current large enough for controlling a load current of approx. 0.2 A is obtained although a chip is divided by the channel isolation region 42. Therefore, using this bidirectional photothyristor chip makes it possible to implement an inexpensive SSR with a main thyristor eliminated.

    Abstract translation: 沟道隔离区域42形成在N型硅衬底41的整个宽度上，并且其中阳极扩散区域43，P栅极扩散区域44，阴极扩散区域45平行于其形成的光电晶体管 在N型硅衬底41的几乎整个宽度上的沟道隔离区域42形成在左手部分40a和右手部分40b中，并且被反向并联。 因此，换向期间的剩余空穴的通道间移动被通道隔离区域42抑制，通过该通道隔离区域42抑制了换向失败，从而改善换流特性。 此外，工作电流足够大以控制大约的负载电流。 即使芯片被通道隔离区域42分割，也可以获得0.2A。 因此，通过使用这种双向光电晶体管芯片，可以实现廉价的SSR，其中省略了主晶闸管。

    Bidirectional photothyristor chip
    2.
    发明授权
    Bidirectional photothyristor chip 有权
    双向光电晶体管芯片

    公开(公告)号：US06995408B2

    公开(公告)日：2006-02-07

    申请号：US10732459

    申请日：2003-12-11

    Applicant: Mitsuru Mariyama ,  Masaru Kubo

    Inventor： Mitsuru Mariyama ,  Masaru Kubo

    IPC: H01L29/74 ,  H01L31/111

    CPC classification number: H01L31/1113 ,  H03K17/04 ,  H03K17/74 ,  H03K17/79 ,  H03K17/7955

    Abstract: A Schottky barrier diode 44 is formed between a P-gate diffusion region 33 and an N-type silicon substrate 31 in a photothyristor on a CH1 side and a photothyristor on a CH2 side. With this arrangement, the injection of minority carriers from the P-gate diffusion region 33 to the N-type silicon substrate 31 is restrained to reduce the amount of remaining carriers, and an excessive amount of carriers remaining in the N-type silicon substrate 31 during commutation has a reduced chance of moving toward the opposite channel side, allowing the commutation characteristic to be improved. Therefore, by a combination with an LED, there can be provided a light-fired coupler for firing and controlling the load.

    Abstract translation: 肖特基势垒二极管44形成在CH 1侧的光晶体管中的P栅极扩散区域33和N型硅衬底31之间，在CH 2侧的光电晶体管。 由此，能够抑制从P-栅极扩散区域33向N型硅衬底31的少数载流子的注入，以减少剩余的载流子的量，并且残留在N型硅衬底31中的过量的载流子 在换向期间，向相反通道侧移动的机会减少，从而可以提高换向特性。 因此，通过与LED的组合，可以提供一种用于点火和控制负载的发光耦合器。

    Bidirectional photothyristor chip, light-fired coupler and solid state relay
    3.
    发明申请
    Bidirectional photothyristor chip, light-fired coupler and solid state relay 有权
    双向光闸晶体管，发光耦合器和固态继电器

    公开(公告)号：US20050006661A1

    公开(公告)日：2005-01-13

    申请号：US10731087

    申请日：2003-12-10

    Applicant: Mitsuru Mariyama ,  Masaru Kubo

    Inventor： Mitsuru Mariyama ,  Masaru Kubo

    IPC: H01L29/747 ,  H01L27/144 ,  H01L29/74 ,  H01L31/111

    CPC classification number: H01L31/1113 ,  H01L27/144

    Abstract: A channel isolation region 42 is formed over the entire width of an N-type silicon substrate 41, and photothyristors, in each of which an anode diffusion region 43, a P-gate diffusion region 44, a cathode diffusion region 45 are formed parallel to the channel isolation region 42 over almost the entire width of the N-type silicon substrate 41, are formed in a left-hand portion 40a and in a right-hand portion 40b and are wired inversely parallel. Thus, the inter-channel movement of residual holes during commutation is restrained by the channel isolation region 42, by which commutation failure is suppressed to improve a commutation characteristic. Further, an operating current large enough for controlling a load current of approx. 0.2 A is obtained although a chip is divided by the channel isolation region 42. Therefore, using this bidirectional photothyristor chip makes it possible to implement an inexpensive SSR with a main thyristor eliminated.

    Abstract translation: 沟道隔离区域42形成在N型硅衬底41的整个宽度上，并且其中阳极扩散区域43，P栅极扩散区域44，阴极扩散区域45平行于其形成的光电晶体管 在N型硅基板41的几乎整个宽度上的通道隔离区域42形成在左手部分40a和右手部分40b中，并且反向并联。 因此，换向期间的剩余空穴的通道间移动被通道隔离区域42抑制，通过该通道隔离区域42抑制了换向失败，从而改善换流特性。 此外，工作电流足够大以控制大约的负载电流。 虽然芯片被沟道隔离区域42划分，但是获得了0.2A。因此，使用这种双向可光电晶体管芯片可以实现廉价的SSR，其中省略了主晶闸管。

    Bidirectional thyristor device
    4.
    发明授权
    Bidirectional thyristor device 失效
    双向晶闸管器件

    公开(公告)号：US6037613A

    公开(公告)日：2000-03-14

    申请号：US28062

    申请日：1998-02-23

    Applicant: Mitsuru Mariyama

    Inventor： Mitsuru Mariyama

    IPC: H01L29/74 ,  H01L29/747 ,  H01L31/111

    CPC classification number: H01L31/1113

    Abstract: In a bidirectional photothyristor formed on a single N type silicon substrate, a distance between a P-gate diffusion region of one thyristor and an anode diffusion region of another thyristor opposed thereto is set to be 40 to 1,000 .mu.m, preferably, 70 to 600 .mu.m, thereby eliminating a malfunction caused by a noise due to a differentiation circuit which is composed of parasitic resistors and junction capacitances. In a field portion between the P-gate diffusion region and the anode diffusion region, an oxygen-doped semi-insulating film is formed via an SiO.sub.2 film, and an Al conductor is removed to form a field light receiving portion. Unlike a P-gate light receiving portion formed in the P-gate diffusion region, the field light receiving portion does not involve a junction capacitance. Therefore, a light sensitivity can be enhanced without lowering a dV/dt resistance.

    Abstract translation: 在单个N型硅衬底上形成的双向光电晶闸管中，一个晶闸管的P栅极扩散区域和与其相对的另一个晶闸管的阳极扩散区域之间的距离设定为40〜1000μm，优选为70〜600μm 从而消除由由寄生电阻和结电容组成的微分电路引起的噪声的故障。 在P栅极扩散区域和阳极扩散区域之间的场部分中，通过SiO 2膜形成氧掺杂半绝缘膜，并且去除Al导体以形成场光接收部分。 不同于形成在P栅极扩散区域中的P栅极光接收部分，场光接收部分不涉及结电容。 因此，可以在不降低dV / dt电阻的情况下增强光灵敏度。

    Bidirectional photothyristor chip, optical lighting coupler, and solid state relay
    7.
    发明授权
    Bidirectional photothyristor chip, optical lighting coupler, and solid state relay 有权
    双向可光电晶体管芯片，光学照明耦合器和固态继电器

    公开(公告)号：US07423298B2

    公开(公告)日：2008-09-09

    申请号：US11080522

    申请日：2005-03-16

    Applicant: Mitsuru Mariyama ,  Satoshi Nakajima

    Inventor： Mitsuru Mariyama ,  Satoshi Nakajima

    IPC: H01L29/747

    CPC classification number: H01L31/1113

    Abstract: Two operation channels CH1 and CH2 of a bidirectional photothyristor chip 31 are disposed away from each other so as not to intersect with each other. In between a P-gate diffusion region 23 on the left-hand side and a P-gate diffusion region 23′ on the right-hand side on an N-type silicon substrate, and in between the CH1 and the CH2, a channel isolation region 29 comprised of an oxygen doped semi-insulating polycrystalline silicon film 35a doped with phosphorus is formed. Consequently, a silicon interface state (Qss) in the vicinity of the channel isolation region 29 on the surface of the N-type silicon substrate increases, so that holes or minority carriers in the N-type silicon substrate are made to disappear in the region. This makes it possible to prevent such commutation failure that when a voltage of the inverted phase is applied to the CH2 side at the point of time when the CH1 is turned off, the CH2 is turned on without incidence of light, and this allows a commutation characteristic to be enhanced.

    Abstract translation: 双向光电晶体管芯片31的两个操作通道CH 1和CH 2被彼此远离地设置成彼此不相交。 在左侧的P栅极扩散区域23和N型硅衬底之间的右侧的P栅极扩散区域23'之间以及在CH 1和CH 2之间，在 形成由掺杂磷的氧掺杂半绝缘多晶硅膜35a构成的沟道隔离区29。 因此，N型硅衬底表面上的沟道隔离区29附近的硅界面态（Qss）增加，使得N型硅衬底中的空穴或少数载流子在该区域中消失 。 这使得可以防止在CH 1截止时的时刻将反相的电压施加到CH 2侧的这种换向故障，CH 2在没有光的入射的情况下接通，这样 允许增强换向特性。

    LED drive circuit, LED illumination fixture, LED illumination device, and LED illumination system
    9.
    发明授权
    LED drive circuit, LED illumination fixture, LED illumination device, and LED illumination system 失效
    LED驱动电路，LED照明灯具，LED照明装置和LED照明系统

    公开(公告)号：US08421371B2

    公开(公告)日：2013-04-16

    申请号：US12987193

    申请日：2011-01-10

    Applicant: Takayuki Shimizu ,  Hirohisa Warita ,  Atsushi Kanamori ,  Mitsuru Mariyama

    Inventor： Takayuki Shimizu ,  Hirohisa Warita ,  Atsushi Kanamori ,  Mitsuru Mariyama

    IPC: G05F1/00

    CPC classification number: H05B33/0815 ,  Y02B20/383

    Abstract: An LED drive circuit in which an alternating voltage is input and an LED is driven, and which can be connected to a phase control dimmer The LED drive circuit is provided with an edge detector for detecting an edge of the output voltage of the phase control dimmer; and a current extractor for extracting a current from a current feed line for feeding an LED drive current to the LED; wherein the value of the current extracted from the current feed line by the current extractor is varied in accordance with the detection results of the edge detector.

    Abstract translation: 一种LED驱动电路，其中输入交流电压并驱动LED，并且其可以连接到相位控制调光器。LED驱动电路设置有边缘检测器，用于检测相位控制调光器的输出电压的边沿 ; 以及电流提取器，用于从当前馈送线提取电流以将LED驱动电流馈送到LED; 其中根据所述边缘检测器的检测结果来改变由所述当前提取器从当前馈送线提取的电流的值。

    LED drive circuit and LED light-emitting device
    10.
    发明授权
    LED drive circuit and LED light-emitting device 失效
    LED驱动电路和LED发光装置

    公开(公告)号：US07764028B2

    公开(公告)日：2010-07-27

    申请号：US12030492

    申请日：2008-02-13

    Applicant: Mitsuru Mariyama ,  Seigo Okada

    Inventor： Mitsuru Mariyama ,  Seigo Okada

    IPC: H05B37/02

    CPC classification number: H05B33/0869 ,  H05B33/0815 ,  H05B33/0821 ,  H05B33/0863 ,  Y02B20/346

    Abstract: A driver circuit 3 feeds a pulse signal to an SSR 2 every half wave of alternating-current power from a commercial power source 4, and thereby separately controls the amounts of emitted light of LED groups 1x and 1y forming an LED unit 1, the LED groups 1x and 1y being connected in parallel in such a way as to point in different directions. That is, a first pulse signal for controlling the duration of light emission of the LED group 1x and a second pulse signal for controlling the duration of light emission of the LED group 1y are fed to the SSR 2 from the driver circuit 3.

    Abstract translation: 驱动电路3从商用电源4向交流电源的每半波形向SSR 2馈送脉冲信号，由此分别控制形成LED单元1的LED组1x和1y的发光量，LED 组1和1y以指向不同方向的方式并联连接。 也就是说，用于控制LED组1x的发光持续时间的第一脉冲信号和用于控制LED组1y的发光持续时间的第二脉冲信号从驱动器电路3馈送到SSR 2。

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