公开(公告)号：US07157747B2

公开(公告)日：2007-01-02

申请号：US10731087

申请日：2003-12-10

Applicant: Mitsuru Mariyama ,  Masaru Kubo

Inventor： Mitsuru Mariyama ,  Masaru Kubo

IPC: H01L31/111

CPC classification number: H01L31/1113 ,  H01L27/144

Abstract: A channel isolation region 42 is formed over the entire width of an N-type silicon substrate 41, and photothyristors, in each of which an anode diffusion region 43, a P-gate diffusion region 44, a cathode diffusion region 45 are formed parallel to the channel isolation region 42 over almost the entire width of the N-type silicon substrate 41, are formed in a left-hand portion 40a and in a right-hand portion 40b and are wired inversely parallel. Thus, the inter-channel movement of residual holes during commutation is restrained by the channel isolation region 42, by which commutation failure is suppressed to improve a commutation characteristic. Further, an operating current large enough for controlling a load current of approx. 0.2 A is obtained although a chip is divided by the channel isolation region 42. Therefore, using this bidirectional photothyristor chip makes it possible to implement an inexpensive SSR with a main thyristor eliminated.

Abstract translation: 沟道隔离区域42形成在N型硅衬底41的整个宽度上，并且其中阳极扩散区域43，P栅极扩散区域44，阴极扩散区域45平行于其形成的光电晶体管 在N型硅衬底41的几乎整个宽度上的沟道隔离区域42形成在左手部分40a和右手部分40b中，并且被反向并联。 因此，换向期间的剩余空穴的通道间移动被通道隔离区域42抑制，通过该通道隔离区域42抑制了换向失败，从而改善换流特性。 此外，工作电流足够大以控制大约的负载电流。 即使芯片被通道隔离区域42分割，也可以获得0.2A。 因此，通过使用这种双向光电晶体管芯片，可以实现廉价的SSR，其中省略了主晶闸管。

公开(公告)号：US06995408B2

公开(公告)日：2006-02-07

申请号：US10732459

申请日：2003-12-11

Applicant: Mitsuru Mariyama ,  Masaru Kubo

Inventor： Mitsuru Mariyama ,  Masaru Kubo

IPC: H01L29/74 ,  H01L31/111

CPC classification number: H01L31/1113 ,  H03K17/04 ,  H03K17/74 ,  H03K17/79 ,  H03K17/7955

Abstract: A Schottky barrier diode 44 is formed between a P-gate diffusion region 33 and an N-type silicon substrate 31 in a photothyristor on a CH1 side and a photothyristor on a CH2 side. With this arrangement, the injection of minority carriers from the P-gate diffusion region 33 to the N-type silicon substrate 31 is restrained to reduce the amount of remaining carriers, and an excessive amount of carriers remaining in the N-type silicon substrate 31 during commutation has a reduced chance of moving toward the opposite channel side, allowing the commutation characteristic to be improved. Therefore, by a combination with an LED, there can be provided a light-fired coupler for firing and controlling the load.

Abstract translation: 肖特基势垒二极管44形成在CH 1侧的光晶体管中的P栅极扩散区域33和N型硅衬底31之间，在CH 2侧的光电晶体管。 由此，能够抑制从P-栅极扩散区域33向N型硅衬底31的少数载流子的注入，以减少剩余的载流子的量，并且残留在N型硅衬底31中的过量的载流子 在换向期间，向相反通道侧移动的机会减少，从而可以提高换向特性。 因此，通过与LED的组合，可以提供一种用于点火和控制负载的发光耦合器。

公开(公告)号：US20050006661A1

公开(公告)日：2005-01-13

申请号：US10731087

申请日：2003-12-10

Applicant: Mitsuru Mariyama ,  Masaru Kubo

Inventor： Mitsuru Mariyama ,  Masaru Kubo

IPC: H01L29/747 ,  H01L27/144 ,  H01L29/74 ,  H01L31/111

CPC classification number: H01L31/1113 ,  H01L27/144

Abstract: A channel isolation region 42 is formed over the entire width of an N-type silicon substrate 41, and photothyristors, in each of which an anode diffusion region 43, a P-gate diffusion region 44, a cathode diffusion region 45 are formed parallel to the channel isolation region 42 over almost the entire width of the N-type silicon substrate 41, are formed in a left-hand portion 40a and in a right-hand portion 40b and are wired inversely parallel. Thus, the inter-channel movement of residual holes during commutation is restrained by the channel isolation region 42, by which commutation failure is suppressed to improve a commutation characteristic. Further, an operating current large enough for controlling a load current of approx. 0.2 A is obtained although a chip is divided by the channel isolation region 42. Therefore, using this bidirectional photothyristor chip makes it possible to implement an inexpensive SSR with a main thyristor eliminated.

Abstract translation: 沟道隔离区域42形成在N型硅衬底41的整个宽度上，并且其中阳极扩散区域43，P栅极扩散区域44，阴极扩散区域45平行于其形成的光电晶体管 在N型硅基板41的几乎整个宽度上的通道隔离区域42形成在左手部分40a和右手部分40b中，并且反向并联。 因此，换向期间的剩余空穴的通道间移动被通道隔离区域42抑制，通过该通道隔离区域42抑制了换向失败，从而改善换流特性。 此外，工作电流足够大以控制大约的负载电流。 虽然芯片被沟道隔离区域42划分，但是获得了0.2A。因此，使用这种双向可光电晶体管芯片可以实现廉价的SSR，其中省略了主晶闸管。

公开(公告)号：US08384011B2

公开(公告)日：2013-02-26

申请号：US12872007

申请日：2010-08-31

Applicant: Hideo Wada ,  Akifumi Yamaguchi ,  Masaru Kubo

Inventor： Hideo Wada ,  Akifumi Yamaguchi ,  Masaru Kubo

IPC: H01J40/14

CPC classification number: G06F3/011 ,  G06F3/0304

Abstract: An optical detection device includes a light emitting element, which is an area sensor, a light emitting lens part for irradiating an object to be measured with a bundle of emission rays emitted from the light emitting element, a light receiving lens part for condensing reflected light from the object, a light receiving element for detecting reflected light from the object condensed by the light receiving lens part, and a signal processing section for processing a light-reception signal from the light receiving element. Based on the light-reception signal from the light receiving element, the signal processing section detects at least one of an x-coordinate or a y-coordinate of the object on an x-y coordinate plane from at least one of a light-spot position or a light-spot shape on the light receiving element.

Abstract translation: 光学检测装置包括作为区域传感器的发光元件，用于从发光元件发射的发射光束照射待测物体的发光透镜部，用于聚光反射光的光接收透镜部 从物体起，用于检测由受光透镜部分聚光的物体的反射光的光接收元件，以及用于处理来自光接收元件的光接收信号的信号处理部分。 基于来自光接收元件的光接收信号，信号处理部从至少一个光点位置或至少一个检测xy坐标平面上的物体的x坐标或y坐标中的至少一个 光接收元件上的光斑形状。

公开(公告)号：US20130001398A1

公开(公告)日：2013-01-03

申请号：US13536415

申请日：2012-06-28

Applicant: Hideo WADA ,  Akifumi Yamaguchi ,  Masaru Kubo

Inventor： Hideo WADA ,  Akifumi Yamaguchi ,  Masaru Kubo

IPC: G01C21/00

CPC classification number: G01S17/48 ,  G01C3/08 ,  G01S7/4813 ,  G02B1/041 ,  G02B7/022 ,  G02B19/0014 ,  G02B19/0085

Abstract: A lens frame, made from metal, retaining a light-emitting lens and a light-receiving lens is retained between a second mold and a third mold both of which are made from light-shielding resins. Anchors are formed by filling light-shielding resin for forming the third mold into fixing slots formed in an upper surface of the second mold and through holes formed in the lens frame. Since the lens frame is made from metal, thermal expansion of the lens frame is hardly caused by ambient temperature changes and self-heating. This causes little difference in the amount of change in difference between the lenses. Further, the lens frame is fixed with anchors between the second mold and the third mold. This suppresses the occurrence of sliding caused by difference in thermal expansion coefficient between the lens frame and the second and third molds.

Abstract translation: 由金属制成的透镜框架，保持发光透镜和光接收透镜保持在由遮光树脂制成的第二模具和第三模具之间。 通过将形成第三模具的遮光树脂填充到形成在第二模具的上表面中的固定槽和通过形成在透镜框架中的孔而形成锚。 由于透镜框由金属制成，透镜框架的热膨胀几乎不会由于环境温度变化和自发热而引起。 这导致透镜之间的差异的变化量几乎没有差异。 此外，透镜框架固定有第二模具和第三模具之间的锚固件。 这抑制由透镜框与第二和第三模之间的热膨胀系数的差异引起的滑动的发生。

公开(公告)号：US6127715A

公开(公告)日：2000-10-03

申请号：US685676

申请日：1996-07-24

Applicant: Motohiko Yamamoto ,  Masaru Kubo

Inventor： Motohiko Yamamoto ,  Masaru Kubo

IPC: H01L27/146 ,  H01L27/14 ,  H01L27/15 ,  H01L31/0216 ,  H01L31/04 ,  H01L31/10 ,  H01L31/103 ,  H01L31/173 ,  H01L31/18 ,  H01S5/00 ,  H01L31/00 ,  H01L31/12

CPC classification number: H01L31/103 ,  H01L31/02165 ,  H01L31/173 ,  H01L31/18

Abstract: Si.sub.3 N.sub.4 having high humidity resistance is used as a surface protecting insulating film covering a metal layer. At a bonding pad portion where metal layer is directly exposed, coverage is provided by anti-corrosion metal portion consisting of a titanium-tungsten alloy layer and gold layers. At a signal processing circuit portion, light intercepting structure and interconnection are provided similarly by titanium-tungsten alloy layer and gold layer. Thus humidity resistance of a photodetector element containing a circuit element is improved, and the gold layer allows direct die-bonding of a laser chip or the like. Further, since light intercepting structure and interconnection can be provided at the signal processing circuit portion simultaneously with the formation of gold layer for the bonding pad portion, the number of manufacturing steps can be reduced.

Abstract translation: 使用具有高耐湿性的Si 3 N 4作为覆盖金属层的表面保护绝缘膜。 在金属层直接暴露的接合焊盘部分，由钛 - 钨合金层和金层组成的防腐金属部分提供覆盖。 在信号处理电路部分，类似地由钛 - 钨合金层和金层提供遮光结构和互连。 因此，包含电路元件的光电检测元件的耐湿性得到改善，金层允许激光芯片等的直接芯片接合。 此外，由于可以在形成用于接合焊盘部分的金层的同时在信号处理电路部分提供遮光结构和互连，因此可以减少制造步骤的数量。

公开(公告)号：US09086480B2

公开(公告)日：2015-07-21

申请号：US13536415

申请日：2012-06-28

Applicant: Hideo Wada ,  Akifumi Yamaguchi ,  Masaru Kubo

Inventor： Hideo Wada ,  Akifumi Yamaguchi ,  Masaru Kubo

IPC: G01C21/02 ,  G01S17/48 ,  G02B1/04 ,  G01C3/08 ,  G02B19/00 ,  G02B7/02 ,  G01S7/481

CPC classification number: G01S17/48 ,  G01C3/08 ,  G01S7/4813 ,  G02B1/041 ,  G02B7/022 ,  G02B19/0014 ,  G02B19/0085

Abstract: A lens frame, made from metal, retaining a light-emitting lens and a light-receiving lens is retained between a second mold and a third mold both of which are made from light-shielding resins. Anchors are formed by filling light-shielding resin for forming the third mold into fixing slots formed in an upper surface of the second mold and through holes formed in the lens frame. Since the lens frame is made from metal, thermal expansion of the lens frame is hardly caused by ambient temperature changes and self-heating. This causes little difference in the amount of change in difference between the lenses. Further, the lens frame is fixed with anchors between the second mold and the third mold. This suppresses the occurrence of sliding caused by difference in thermal expansion coefficient between the lens frame and the second and third molds.

Abstract translation: 由金属制成的透镜框架，保持发光透镜和光接收透镜保持在由遮光树脂制成的第二模具和第三模具之间。 通过将形成第三模具的遮光树脂填充到形成在第二模具的上表面中的固定槽和通过形成在透镜框架中的孔而形成锚。 由于透镜框由金属制成，透镜框架的热膨胀几乎不会由于环境温度变化和自热而引起。 这导致透镜之间的差异的变化量几乎没有差异。 此外，透镜框架固定有第二模具和第三模具之间的锚固件。 这抑制由透镜框与第二和第三模之间的热膨胀系数的差异引起的滑动的发生。

公开(公告)号：US20110156612A1

公开(公告)日：2011-06-30

申请号：US12871572

申请日：2010-08-30

Applicant: Atsushi Kanamori ,  Masaru Kubo ,  Yasuhiro Maruyama ,  Hirohisa Warita

Inventor： Atsushi Kanamori ,  Masaru Kubo ,  Yasuhiro Maruyama ,  Hirohisa Warita

IPC: H05B37/02

CPC classification number: H05B33/0815 ,  H05B33/0809 ,  H05B33/0845 ,  H05B37/0263 ,  Y02B20/348

Abstract: An LED drive circuit for driving an LED by input of an alternating voltage, the LED drive circuit being capable of connecting to a phase control dimmer. The LED drive circuit is provided with a current extractor for continuing to allow current to flow into the phase control dimmer so that a phase control element inside the phase control dimmer does not switch off before the alternating voltage reaches 0 V after the phase control element inside the phase control dimmer switches on and the LED emits light.

Abstract translation: 一种用于通过输入交流电压来驱动LED的LED驱动电路，所述LED驱动电路能够连接到相位控制调光器。 LED驱动电路设置有电流提取器，用于继续允许电流流入相位控制调光器，使得相位控制调光器内的相位控制元件在相位控制元件内部的交流电压达到0V之前不会断开 相控调光器打开，LED发光。

公开(公告)号：US06448614B2

公开(公告)日：2002-09-10

申请号：US09864861

申请日：2001-05-25

Applicant: Masaru Kubo ,  Toshihiko Fukushima ,  Zenpei Tani

Inventor： Masaru Kubo ,  Toshihiko Fukushima ,  Zenpei Tani

IPC: H01L2972

CPC classification number: H01L27/1443

Abstract: A circuit-incorporating photosensitive device comprising: an SOI wafer including a first silicon substrate, a second silicon substrate, and an oxide film; a photodiode formed in a first region of the SOI wafer; and a signal processing circuit formed in a second region of the SOI wafer, wherein the photodiode includes a photosensitive layer formed of an SiGe layer.

Abstract translation: 一种电路结合光敏器件，包括：SOI晶片，包括第一硅衬底，第二硅衬底和氧化物膜; 形成在SOI晶片的第一区域中的光电二极管; 以及形成在SOI晶片的第二区域中的信号处理电路，其中所述光电二极管包括由SiGe层形成的感光层。

公开(公告)号：US6114740A

公开(公告)日：2000-09-05

申请号：US944101

申请日：1997-09-30

Applicant: Takahiro Takimoto ,  Naoki Fukunaga ,  Masaru Kubo

Inventor： Takahiro Takimoto ,  Naoki Fukunaga ,  Masaru Kubo

IPC: H01L27/14 ,  H01L27/144 ,  H01L31/02 ,  H01L31/10 ,  A01L31/06 ,  H01L31/00

CPC classification number: H01L27/144 ,  H01L31/02024

Abstract: The circuit-integrating light-receiving element of this invention includes: a semiconductor substrate of a first conductivity type; a first semiconductor layer of a second conductivity type formed over the semiconductor substrate; a first semiconductor layer of the first conductivity type for dividing the first semiconductor layer into semiconductor regions of the second conductivity type; light-detecting sections being constituted by the divided semiconductor regions and underlying regions of the semiconductor substrate, a divided photodiode being composed of the light-detecting sections; a second semiconductor layer of the second conductivity type formed only in the vicinity of the first semiconductor layer of the first conductivity type functioning as a division section of the divided photodiode and within the regions of the semiconductor substrate forming the respective light-detecting sections; and a second semiconductor layer of the first conductivity type formed in a surface region of the first semiconductor layer of the second conductivity type including the division section so as to cover an upper part of the second semiconductor layer of the second conductivity type.

Abstract translation: 本发明的电路集成光接收元件包括：第一导电类型的半导体衬底; 形成在半导体衬底上的第二导电类型的第一半导体层; 第一导电类型的第一半导体层，用于将第一半导体层分成第二导电类型的半导体区域; 光检测部分由半导体衬底的划分的半导体区域和下面的区域构成，由光检测部分组成的分隔光电二极管; 第二导电类型的第二半导体层仅形成在用作分隔光电二极管的分割部分的第一导电类型的第一半导体层附近并且在形成各个光检测部分的半导体衬底的区域内; 以及第一导电类型的第二半导体层，形成在包括分隔部分的第二导电类型的第一半导体层的表面区域中，以覆盖第二导电类型的第二半导体层的上部。