Barium titanate semiconductive ceramic
    1.
    发明授权
    Barium titanate semiconductive ceramic 有权
    钛酸钡半导体陶瓷

    公开(公告)号:US06472339B2

    公开(公告)日:2002-10-29

    申请号:US09157062

    申请日:1998-09-18

    IPC分类号: C04B35468

    摘要: The present invention provides barium titanate semiconductive ceramic having low specific resistance at room temperature and high withstand voltage, which fully satisfies the demand for enhancing withstand voltage. The average ceramic grain size of the barium titanate semiconductive ceramic is controlled to about 0.9 &mgr;m or less. By this control, the ceramic possesses low specific resistance at room temperature and high withstand voltage fully satisfying a recent demand for enhancing withstand voltage and may suitably used for applications such as controlling temperature and limiting current, or in exothermic devices for constant temperature. Accordingly, the barium titanate semiconductive ceramic enables an apparatus using the same to have enhanced performance and reduced size.

    摘要翻译: 本发明提供了在室温下具有低电阻率和高耐压的钛酸钡半导体陶瓷,其完全满足提高耐电压的要求。 钛酸钡半导体陶瓷的平均陶瓷粒径控制在0.9μm以下。 通过该控制,陶瓷在室温下具有低的电阻率和高耐受电压,完全满足了近来对提高耐受电压的要求,并且可以适用于诸如控制温度和限制电流的应用,或用于恒温的放热装置中。 因此,钛酸钡半导体陶瓷使得能够使用其的装置具有增强的性能和减小的尺寸。

    Semiconductor ceramic and electronic element fabricated from the same
    2.
    发明授权
    Semiconductor ceramic and electronic element fabricated from the same 有权
    半导体陶瓷和电子元件由其制造

    公开(公告)号:US6153931A

    公开(公告)日:2000-11-28

    申请号:US262573

    申请日:1999-03-04

    CPC分类号: H01C7/025

    摘要: The present invention provides a barium titanate-based semiconducting ceramic which exhibits excellent PTC characteristic and which can be fired at a temperature lower than 1000.degree. C. The present invention also provides an electronic element fabricated from the ceramic. The semiconducting ceramic contains, in a semiconducting sintered barium titanate; boron oxide; an oxide of at least one of barium, strontium, calcium, lead, yttrium and a rare earth element; and an optional oxide of at least one of titanium, tin, zirconium, niobium, tungsten and antimony in which the atomic boron is0.005.ltoreq.B/.beta..ltoreq.0.50 and1.0.ltoreq.B/(.alpha.-.beta.).ltoreq.4.0wherein .alpha. represents the total number of atoms of barium, strontium, calcium, lead, yttrium and rare earth element contained in the semiconducting ceramic, and .beta. represents the total number of atoms of titanium, tin, zirconium, niobium, tungsten and antimony contained in the semiconducting ceramic.

    摘要翻译: 本发明提供一种钛酸钡系半导体陶瓷,其表现出优异的PTC特性,并可在低于1000℃的温度下烧制。本发明还提供了由陶瓷制成的电子元件。 半导体陶瓷在半导体烧结的钛酸钡中含有; 氧化硼 钡,锶,钙,铅,钇和稀土元素中的至少一种的氧化物; 和钛,锡,锆,铌,钨和锑中的至少一种的任选的氧化物,其中原子硼为0.005≤B/β= 0.50和1.0

    Semiconducting ceramic material and electronic part employing the same
    3.
    发明授权
    Semiconducting ceramic material and electronic part employing the same 有权
    半导体陶瓷材料和采用其的电子部件

    公开(公告)号:US06544443B2

    公开(公告)日:2003-04-08

    申请号:US09730133

    申请日:2000-12-05

    IPC分类号: H01B108

    CPC分类号: C04B35/468

    摘要: The semiconducting ceramic material of the present invention containing BaTiO3 and having a positive temperature coefficient of resistance is endowed with high withstand voltage. In the semiconducting ceramic material, a boundary temperature defined at the boundary between a first temperature range and a second temperature range is 180° C. or more (e.g., 370° C.) higher than the Curie temperature, wherein the first temperature range is higher than the Curie temperature and the ceramic material has a positive temperature coefficient of resistance in the range, and the second temperature range is higher than the first temperature range and the ceramic material has a negative temperature coefficient of resistance in the range.

    摘要翻译: 含有BaTiO 3并具有正温度系数的本发明的半导体陶瓷材料具有高的耐受电压。 在半导体陶瓷材料中,限定在第一温度范围和第二温度范围之间的边界处的边界温度比居里温度高180℃或更高(例如,370℃),其中第一温度范围为 高于居里温度,陶瓷材料的正温度系数在该范围内,第二温度范围高于第一温度范围,并且陶瓷材料的负温度系数在该范围内。

    Semiconducting ceramic and semiconducting ceramic electronic element
    7.
    发明授权
    Semiconducting ceramic and semiconducting ceramic electronic element 有权
    半导体陶瓷和半导体陶瓷电子元件

    公开(公告)号:US06376079B1

    公开(公告)日:2002-04-23

    申请号:US09281343

    申请日:1999-03-30

    IPC分类号: B32B702

    摘要: The present invention provides a semiconducting ceramic which possesses a dielectric strength of 800 V/mm or more and a specific resistance at room temperature of 100 &OHgr;·cm or less, the specific resistance at room temperature undergoing substantially no time-course change. The semiconducting ceramic is formed of a sintered semiconducting material containing barium titanate, wherein the average grain size of the semiconducting ceramic is about 1.0 &mgr;m or less and the relative spectral intensity ratio represented by BaCO3/BaO, which is determined by XPS at the surface of the ceramic, is 0.5 or less.

    摘要翻译: 本发明提供一种半导体陶瓷,其绝缘强度为800V / mm以上,室温下的电阻率为100Ω·cm·cm以下,室温下的电阻率基本上无时间变化。 半导体陶瓷由包含钛酸钡的烧结半导体材料形成,其中半导体陶瓷的平均晶粒尺寸为约1.0μm或更小,由BaCO 3 / BaO表示的相对光谱强度比由XPS表示的 陶瓷为0.5以下。

    Multilayer positive temperature coefficient thermistor and method for designing the same
    8.
    发明申请
    Multilayer positive temperature coefficient thermistor and method for designing the same 有权
    多层正温度系数热敏电阻及其设计方法

    公开(公告)号:US20070115090A1

    公开(公告)日:2007-05-24

    申请号:US10595558

    申请日:2004-09-13

    IPC分类号: H01C7/13

    摘要: A multilayer PTC thermistor reliably decreases the resistance by decreasing the thickness of ceramic layers composed of a BaTiO3 semiconductor ceramic and achieves a resistance close to the resistance calculated from the multilayer structure. The thermistor is adjusted to satisfy the conditions 5≦X≦18 and 4≦X·Y≦10, wherein X is a thickness (μm) of each ceramic layer disposed between adjacent internal electrodes and Y is a donor content (%) in the barium titanate semiconductor ceramic constituting the ceramic layers, Y being expressed in terms of (number of donor atoms/number of Ti atoms)×100.

    摘要翻译: 多层PTC热敏电阻通过减小由BaTiO 3半导体陶瓷构成的陶瓷层的厚度可靠地降低电阻,并实现接近由多层结构计算的电阻的电阻。 调整热敏电阻以满足条件5 <= X <= 18且4 <= XY <= 10,其中X是设置在相邻内部电极之间的每个陶瓷层的厚度(母体),Y是供体含量(%) 在构成陶瓷层的钛酸钡半导体陶瓷中,Y以(供体原子数/ Ti原子数)×100表示​​。

    Semiconductive ceramic and semiconductive ceramic element using the same
    9.
    发明授权
    Semiconductive ceramic and semiconductive ceramic element using the same 失效
    半导体陶瓷和半导体陶瓷元件使用相同

    公开(公告)号:US6054403A

    公开(公告)日:2000-04-25

    申请号:US174212

    申请日:1998-10-16

    CPC分类号: C04B35/50 H01C7/043

    摘要: A semiconductive ceramic in which the B constant is maintained at about 4000 K or more at elevated temperature to thereby decrease power consumption, and the B constant is lowered less than 4000 K at low temperature so as to avoid unnecessary increase of resistance; as well as a semiconductive ceramic element using the same. The semiconductive ceramic is formed of a lanthanum cobalt oxide, which serves as the primary component, and, as a secondary component, at least one oxide of Li, Na, K, Rb, Cs, Be, Mg, Ca, Sr, Ba, Ni, Cu and Zn. The semiconductive ceramic element is fabricated through use of the semiconductive ceramic and an electrode formed thereon.

    摘要翻译: 一种半导体陶瓷,其中B常数在升高的温度下保持在约4000K或更高,从而降低功耗,并且B常数在低温下降低到低于4000K,以避免不必要的电阻增加; 以及使用其的半导体陶瓷元件。 半导体陶瓷由作为主要成分的氧化镧钴氧化物形成,作为二次成分,可以使用Li,Na,K,Rb,Cs,Be,Mg,Ca,Sr,Ba, Ni,Cu和Zn。 半导体陶瓷元件通过使用半导体陶瓷和形成在其上的电极来制造。