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    Barium titanate semiconductive ceramic
    1.
    发明授权
    Barium titanate semiconductive ceramic 有权
    钛酸钡半导体陶瓷

    公开(公告)号：US06472339B2

    公开(公告)日：2002-10-29

    申请号：US09157062

    申请日：1998-09-18

    申请人： Mitsutoshi Kawamoto ,  Hideaki Niimi ,  Ryouichi Urahara ,  Yukio Sakabe

    发明人： Mitsutoshi Kawamoto ,  Hideaki Niimi ,  Ryouichi Urahara ,  Yukio Sakabe

    IPC分类号： C04B35468

    CPC分类号： B82Y30/00 ,  C01G23/006 ,  C01P2002/50 ,  C01P2002/76 ,  C01P2002/77 ,  C01P2004/62 ,  C01P2004/64 ,  C04B35/4682

    摘要： The present invention provides barium titanate semiconductive ceramic having low specific resistance at room temperature and high withstand voltage, which fully satisfies the demand for enhancing withstand voltage. The average ceramic grain size of the barium titanate semiconductive ceramic is controlled to about 0.9 &mgr;m or less. By this control, the ceramic possesses low specific resistance at room temperature and high withstand voltage fully satisfying a recent demand for enhancing withstand voltage and may suitably used for applications such as controlling temperature and limiting current, or in exothermic devices for constant temperature. Accordingly, the barium titanate semiconductive ceramic enables an apparatus using the same to have enhanced performance and reduced size.

    摘要翻译： 本发明提供了在室温下具有低电阻率和高耐压的钛酸钡半导体陶瓷，其完全满足提高耐电压的要求。 钛酸钡半导体陶瓷的平均陶瓷粒径控制在0.9μm以下。 通过该控制，陶瓷在室温下具有低的电阻率和高耐受电压，完全满足了近来对提高耐受电压的要求，并且可以适用于诸如控制温度和限制电流的应用，或用于恒温的放热装置中。 因此，钛酸钡半导体陶瓷使得能够使用其的装置具有增强的性能和减小的尺寸。

    Semiconductor ceramic and electronic element fabricated from the same
    2.
    发明授权
    Semiconductor ceramic and electronic element fabricated from the same 有权
    半导体陶瓷和电子元件由其制造

    公开(公告)号：US6153931A

    公开(公告)日：2000-11-28

    申请号：US262573

    申请日：1999-03-04

    申请人： Hideaki Niimi ,  Mitsutoshi Kawamoto ,  Akinori Nakayama ,  Satoshi Ueno ,  Ryouichi Urahara

    发明人： Hideaki Niimi ,  Mitsutoshi Kawamoto ,  Akinori Nakayama ,  Satoshi Ueno ,  Ryouichi Urahara

    IPC分类号： C04B35/46 ,  H01C7/02 ,  H01L31/0256 ,  C04B35/48 ,  C04B35/49 ,  H01L23/06

    CPC分类号： H01C7/025

    摘要： The present invention provides a barium titanate-based semiconducting ceramic which exhibits excellent PTC characteristic and which can be fired at a temperature lower than 1000.degree. C. The present invention also provides an electronic element fabricated from the ceramic. The semiconducting ceramic contains, in a semiconducting sintered barium titanate; boron oxide; an oxide of at least one of barium, strontium, calcium, lead, yttrium and a rare earth element; and an optional oxide of at least one of titanium, tin, zirconium, niobium, tungsten and antimony in which the atomic boron is0.005.ltoreq.B/.beta..ltoreq.0.50 and1.0.ltoreq.B/(.alpha.-.beta.).ltoreq.4.0wherein .alpha. represents the total number of atoms of barium, strontium, calcium, lead, yttrium and rare earth element contained in the semiconducting ceramic, and .beta. represents the total number of atoms of titanium, tin, zirconium, niobium, tungsten and antimony contained in the semiconducting ceramic.

    摘要翻译： 本发明提供一种钛酸钡系半导体陶瓷，其表现出优异的PTC特性，并可在低于1000℃的温度下烧制。本发明还提供了由陶瓷制成的电子元件。 半导体陶瓷在半导体烧结的钛酸钡中含有; 氧化硼 钡，锶，钙，铅，钇和稀土元素中的至少一种的氧化物; 和钛，锡，锆，铌，钨和锑中的至少一种的任选的氧化物，其中原子硼为0.005≤B/β= 0.50和1.0

    Semiconducting ceramic material and electronic part employing the same
    5.
    发明授权
    Semiconducting ceramic material and electronic part employing the same 有权
    半导体陶瓷材料和采用其的电子部件

    公开(公告)号：US06544443B2

    公开(公告)日：2003-04-08

    申请号：US09730133

    申请日：2000-12-05

    申请人： Hideaki Niimi ,  Akira Ando ,  Mitsutoshi Kawamoto ,  Masahiro Kodama

    发明人： Hideaki Niimi ,  Akira Ando ,  Mitsutoshi Kawamoto ,  Masahiro Kodama

    IPC分类号： H01B108

    CPC分类号： C04B35/468

    摘要： The semiconducting ceramic material of the present invention containing BaTiO3 and having a positive temperature coefficient of resistance is endowed with high withstand voltage. In the semiconducting ceramic material, a boundary temperature defined at the boundary between a first temperature range and a second temperature range is 180° C. or more (e.g., 370° C.) higher than the Curie temperature, wherein the first temperature range is higher than the Curie temperature and the ceramic material has a positive temperature coefficient of resistance in the range, and the second temperature range is higher than the first temperature range and the ceramic material has a negative temperature coefficient of resistance in the range.

    摘要翻译： 含有BaTiO 3并具有正温度系数的本发明的半导体陶瓷材料具有高的耐受电压。 在半导体陶瓷材料中，限定在第一温度范围和第二温度范围之间的边界处的边界温度比居里温度高180℃或更高（例如，370℃），其中第一温度范围为 高于居里温度，陶瓷材料的正温度系数在该范围内，第二温度范围高于第一温度范围，并且陶瓷材料的负温度系数在该范围内。

    Semiconducting ceramic and semiconducting ceramic electronic element
    7.
    发明授权
    Semiconducting ceramic and semiconducting ceramic electronic element 有权
    半导体陶瓷和半导体陶瓷电子元件

    公开(公告)号：US06376079B1

    公开(公告)日：2002-04-23

    申请号：US09281343

    申请日：1999-03-30

    申请人： Mitsutoshi Kawamoto ,  Hideaki Niimi

    发明人： Mitsutoshi Kawamoto ,  Hideaki Niimi

    IPC分类号： B32B702

    CPC分类号： C04B35/468 ,  H01C7/025 ,  H01C17/06533 ,  Y10T428/31

    摘要： The present invention provides a semiconducting ceramic which possesses a dielectric strength of 800 V/mm or more and a specific resistance at room temperature of 100 &OHgr;·cm or less, the specific resistance at room temperature undergoing substantially no time-course change. The semiconducting ceramic is formed of a sintered semiconducting material containing barium titanate, wherein the average grain size of the semiconducting ceramic is about 1.0 &mgr;m or less and the relative spectral intensity ratio represented by BaCO3/BaO, which is determined by XPS at the surface of the ceramic, is 0.5 or less.

    摘要翻译： 本发明提供一种半导体陶瓷，其绝缘强度为800V / mm以上，室温下的电阻率为100Ω·cm·cm以下，室温下的电阻率基本上无时间变化。 半导体陶瓷由包含钛酸钡的烧结半导体材料形成，其中半导体陶瓷的平均晶粒尺寸为约1.0μm或更小，由BaCO 3 / BaO表示的相对光谱强度比由XPS表示的 陶瓷为0.5以下。

    Film production method and film-element production method
    8.
    发明授权
    Film production method and film-element production method 失效
    薄膜生产方法和薄膜元件生产方法

    公开(公告)号：US06838117B2

    公开(公告)日：2005-01-04

    申请号：US10346074

    申请日：2003-01-17

    申请人： Mitsutoshi Kawamoto

    发明人： Mitsutoshi Kawamoto

    IPC分类号： C01G23/00 ,  C23C18/12 ,  H01L21/316 ,  B05D5/12 ,  B05D1/36 ,  B05D3/10

    CPC分类号： C23C18/04 ,  C23C18/1216 ,  C23C18/1241 ,  H01L41/1876 ,  H01L41/317

    摘要： A method for producing a lead ferroelectric film having high relative dielectric constant and low dielectric loss by a hydrothermal process is disclosed. The method includes the step of hydrothermally forming a ferroelectric layer on a substrate, followed by the step of hydrothermally treating the resulting film in an aqueous solution having a pH of about 5 to 7.

    摘要翻译： 公开了一种通过水热法生产具有高相对介电常数和低介电损耗的铅铁电薄膜的方法。 该方法包括在基板上水热成形铁电体层的步骤，然后在pH约为5〜7的水溶液中对所得膜进行水热处理的步骤。

    Monolithic semiconducting ceramic electronic component
    9.
    发明授权
    Monolithic semiconducting ceramic electronic component 有权

    公开(公告)号：US06791179B2

    公开(公告)日：2004-09-14

    申请号：US10446699

    申请日：2003-05-29

    申请人： Mitsutoshi Kawamoto

    发明人： Mitsutoshi Kawamoto

    IPC分类号： H01L2312

    CPC分类号： H01C1/1406 ,  H01C7/025 ,  Y10S257/924

    摘要： A monolithic semiconducting ceramic electronic component includes barium titanate-based semiconducting ceramic layers and internal electrode layers alternately deposited, and external electrodes electrically connected to the internal electrode layers. The semiconducting ceramic layers contain ceramic particles having an average particle size of about 1 &mgr;m or less and the average number of ceramic particles per layer in the direction perpendicular to the semiconductor layers is about 10 or more. The internal electrode layers are preferably composed of a nickel-based metal.