公开(公告)号：US5834827A

公开(公告)日：1998-11-10

申请号：US748835

申请日：1996-11-14

申请人： Mitsutoshi Miyasaka ,  Kiyofumi Kitawada ,  Minoru Matsuo ,  Seiichiro Higashi ,  Tokuroh Ozawa ,  Satoshi Takenaka ,  Yojiro Matsueda ,  Takashi Nakazawa ,  Hiroyuki Ohshima ,  Satoshi Inoue

发明人： Mitsutoshi Miyasaka ,  Kiyofumi Kitawada ,  Minoru Matsuo ,  Seiichiro Higashi ,  Tokuroh Ozawa ,  Satoshi Takenaka ,  Yojiro Matsueda ,  Takashi Nakazawa ,  Hiroyuki Ohshima ,  Satoshi Inoue

IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L29/49 ,  H01L29/786 ,  H01L23/54

CPC分类号： H01L29/66757 ,  H01L21/28079 ,  H01L29/4908 ,  H01L29/78675

摘要： Electronic devices are provided with electrically conductive interconnections which are formed on the insulator material. Such electronic devices include, for example, thin film semiconductor devices (TFT), metal-insulator-metallic type non-wiring elements (MIM), solar cells, Large Scale Integration devices (LSI) or printed-wiring boards. At least a part of the electrically conductive interconnections are made of .alpha.-structure tantalum (Ta) which contains hydrogen. The .alpha.-structure tantalum does not have cubical crystals in its crystal system, but rather has body-centered cubes (bcc). The resistivity of the .alpha.-structure tantalum is from about 20 .mu..OMEGA. centimeters to about 60 .mu..OMEGA. centimeters. When hydrogen is included within this .alpha.-structure tantalum film, small amounts of nitrogen may be contained along with the hydrogen in the film. When a semiconductor layer is directly formed on the lower conductive layer, the upper conductive layer contains, as a primary component, the hydrogen contained .alpha.-structure tantalum.

摘要翻译： 电子设备设置有形成在绝缘体材料上的导电互连。 这种电子器件包括例如薄膜半导体器件（TFT），金属 - 绝缘体 - 金属型非布线元件（MIM），太阳能电池，大规模集成器件（LSI）或印刷电路板。 至少一部分导电互连由含有氢的α结构钽（Ta）制成。 α结构钽在其晶体系统中不具有立方晶体，而是具有以体积为中心的立方体（bcc）。 α结构钽的电阻率为约20微米欧米算至约60微米欧米加厘米。 当在该α结构钽膜中包含氢时，可能含有少量的氮以及膜中的氢。 当半导体层直接形成在下导电层上时，上导电层含有含氢的α结构钽作为主要成分。

公开(公告)号：US5953582A

公开(公告)日：1999-09-14

申请号：US999540

申请日：1997-06-27

申请人： Ichio Yudasaka ,  Minoru Matsuo ,  Satoshi Takenaka

发明人： Ichio Yudasaka ,  Minoru Matsuo ,  Satoshi Takenaka

IPC分类号： G02F1/1362 ,  H01L21/77 ,  H01L21/84 ,  H01L29/786 ,  H01L21/336 ,  H01L21/8238

CPC分类号： G02F1/13454 ,  H01L27/1214 ,  H01L29/78618 ,  H01L29/78621

摘要： In the formation of a thin-film transistor (620) capable of improving the OFF current characteristic, first, all ions (arrow Ion-1) generated from a mixed gas (doping gas) containing 5% PH.sub.3 with the remainder being H.sub.2 gas are implanted to a polycrystalline silicon film (604) at an approximately 80 keV energy level to achieve a P.sup.+ ion dose in the range from 3.times.10.sup.13 /cm.sup.2 to 1.times.10.sup.14 /cm.sup.2 in the process forming low concentration source-drain areas (602, 603). Next, all ions generated from a doping gas of pure hydrogen (arrow Ion-2) are implanted to the low concentration area (604a) at an approximately 20 keV energy level to achieve an H.sup.+ ion dose from 1.times.10.sup.14 /cm.sup.2 to 1.times.10.sup.15 /cm.sup.2. Then, the impurity is activated by heat treatment of the low concentration area (604a) implanted with impurity for approximately one hour at approximately 300.degree. C. in a nitrogen atmosphere.

摘要翻译： 在形成能够提高截止电流特性的薄膜晶体管（620）的情况下，首先，从含有5％PH 3，剩余部分为氢气的混合气体（掺杂气体）产生的所有离子（箭头Ion-1）为 以大约80keV能级注入多晶硅膜（604），以在形成低浓度源极 - 漏极区域（602,603）的工艺中实现3×10 13 / cm 2至1×10 14 / cm 2范围内的P +离子剂量。 接下来，从纯氢（箭头Ion-2）的掺杂气体产生的所有离子以大约20keV能级注入低浓度区域（604a），以实现从1×10 14 / cm 2到1×10 15 / cm 2的H +离子剂量。 然后，在氮气气氛中，在大约300℃下，通过对注入杂质的低浓度区域（604a）进行约1小时的热处理来激活杂质。

公开(公告)号：US5563427A

公开(公告)日：1996-10-08

申请号：US313310

申请日：1994-12-06

申请人： Ichio Yudasaka ,  Minoru Matsuo ,  Satoshi Takenaka

发明人： Ichio Yudasaka ,  Minoru Matsuo ,  Satoshi Takenaka

IPC分类号： G02F1/1362 ,  H01L21/223 ,  H01L21/30 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L27/01 ,  H01L29/04 ,  H01L29/76

CPC分类号： G02F1/13454 ,  H01L21/2236 ,  H01L21/3003 ,  H01L27/1251 ,  H01L27/127 ,  H01L29/66757 ,  H01L29/78618 ,  H01L29/78621

摘要： In the formation of a thin-film transistor (620) capable of improving the OFF current characteristic, first, all ions (arrow Ion-1) generated from a mixed gas (doping gas) containing 5% PH.sub.3 with the remainder being H.sub.2 gas are implanted to a polycrystalline silicon film (604) at an approximately 80 keV energy level to achieve a P.sup.+ ion dose in the range from 3.times.10.sup.13 /cm.sup.2 to 1.times.10.sup.14 /cm.sup.2 in the process forming low concentration source-drain areas (602, 603). Next, all ions generated from a doping gas of pure hydrogen (arrow Ion-2) are implanted to the low concentration area (604a) at an approximately 20 keV energy level to achieve an H.sup.+ ion dose from 1.times.10.sup.14 /cm.sup.2 to 1.times.10.sup.15 /cm.sup.2. Then, the impurity is activated by heat treatment of the low concentration area (604a) implanted with impurity for approximately one hour at approximately 300.degree. C. in a nitrogen atmosphere.

摘要翻译： PCT No.PCT / JP94 / 00189 Sec。 371日期1994年12月6日第 102（e）日期1994年12月6日PCT 1994年2月9日PCT PCT。 WO94 / 18706 PCT公开号 日期1994年8月18日在形成能够改善截止电流特性的薄膜晶体管（620）的情况下，首先，从含有5％PH 3的混合气体（掺杂气体）产生的所有离子（箭头Ion-1） 剩余部分为H2气体以大约80keV能级注入多晶硅膜（604），以在形成低浓度源极 - 漏极区域（602）的过程中实现3×10 13 / cm 2至1×10 14 / cm 2范围内的P +离子剂量 ，603）。 接下来，从纯氢（箭头Ion-2）的掺杂气体产生的所有离子以大约20keV能级注入低浓度区域（604a），以实现从1×10 14 / cm 2到1×10 15 / cm 2的H +离子剂量。 然后，在氮气气氛中，在大约300℃下，通过对注入杂质的低浓度区域（604a）进行约1小时的热处理来激活杂质。

公开(公告)号：US09664415B2

公开(公告)日：2017-05-30

申请号：US13520229

申请日：2011-02-22

申请人： Makoto Kishi ,  Minoru Matsuo ,  Seiichi Okuda ,  Masaharu Nitta ,  Tatsuru Nagai

发明人： Makoto Kishi ,  Minoru Matsuo ,  Seiichi Okuda ,  Masaharu Nitta ,  Tatsuru Nagai

IPC分类号： F24D3/18 ,  F24H4/02 ,  F24D19/10 ,  F24H9/20 ,  F24D11/02 ,  F24D17/02

CPC分类号： F24H4/02 ,  F24D3/18 ,  F24D19/1021 ,  F24D19/1024 ,  F24D19/1033 ,  F24D19/1039 ,  F24D2200/126 ,  F24D2220/0235 ,  F24H9/2007 ,  Y02B30/12

摘要： A hot-water heat pump that is capable of reducing installation costs and installation space and also reducing the heating time of a hot-water route, and a method of controlling the same are provided. The hot-water heat pump (1) is provided with a hot-water-heat-pump main unit (2) that includes a thermal output heat exchanger that absorbs heat from a heat-source route and outputs heat; hot-water route (5 and 6) that receive heat outputted from the thermal output heat exchanger; a three-way valve (4) provided in the outlet-side hot-water route (6); and a controller that controls the hot-water-heat-pump main unit (2) and the three-way valve (4), wherein the controller controls the size of openings of the three-way valve (4) so that a portion of the outlet-side hot-water route (6) leading out of the thermal output heat exchanger is guided to an upstream side of the thermal output heat exchanger.

公开(公告)号：US07458253B2

公开(公告)日：2008-12-02

申请号：US11344000

申请日：2006-02-01

申请人： Norihiko Aze ,  Kyoichi Ashikawa ,  Kohji Kamiya ,  Minoru Matsuo ,  Takayuki Yoshii ,  Nozomu Takahata

发明人： Norihiko Aze ,  Kyoichi Ashikawa ,  Kohji Kamiya ,  Minoru Matsuo ,  Takayuki Yoshii ,  Nozomu Takahata

IPC分类号： G01N3/48

CPC分类号： G03G15/2057 ,  G01N2203/0082

摘要： In a method for evaluating a fixing member to fix a toner having a surface layer, a hardness test is carried out by applying a pressure deformation from the surface side of the fixing member, and when a deformation of the surface layer by the pressure deformation is within an elastic range, the fixing member is regarded as a standard product.

摘要翻译： 在用于评价固定构件以固定具有表面层的调色剂的方法中，通过从固定构件的表面侧施加压力变形来进行硬度试验，并且当通过压力变形的表面层的变形为 在弹性范围内，固定构件被认为是标准产品。

公开(公告)号：US20050118361A1

公开(公告)日：2005-06-02

申请号：US10963561

申请日：2004-10-14

申请人： Yuji Natori ,  Minoru Matsuo

发明人： Yuji Natori ,  Minoru Matsuo

IPC分类号： B28B5/00 ,  B41M5/40 ,  G03G15/16

CPC分类号： G03G15/1685 ,  G03G2215/017

摘要： Disclosed is an intermediate transferring belt utilized in order to transfer a toner image formed by developing a latent image on an image bearing member by means of a toner, wherein the intermediate transferring belt comprises a matrix and conductive fine particles, the conductive fine particles are dispersed into the matrix, and the surface resistivity ρs of the outer surface of the intermediate transferring belt is 1.0×109 ohm/square to 1.0×1013 ohm/square, and wherein the intermediate transferring belt is applied to an image forming apparatus of which transferring electric field is controlled to 15 MV/m or less when the toner image on the image bearing member is primarily transferred to the intermediate transferring belt.

摘要翻译： 公开了一种中间转印带，其用于通过调色剂将通过显影潜像形成的调色剂图像转印到图像承载部件上，其中中间转印带包含基质和导电细颗粒，导电细颗粒分散 并且中间转印带的外表面的表面电阻率rhos为1.0×10 9欧姆/平方至1.0×10 13欧姆/平方，并且其中 当将图像承载部件上的调色剂图像主要传送到中间转印带时，将中间转印带施加到其转印电场被控制为15MV / m以下的图像形成装置。

公开(公告)号：US06072966A

公开(公告)日：2000-06-06

申请号：US971736

申请日：1997-11-17

申请人： Minoru Matsuo

发明人： Minoru Matsuo

IPC分类号： G03G15/02

CPC分类号： G03G15/0258 ,  G03G15/0291 ,  Y10S430/102

摘要： A corona charging method of charging a chargeable material by corona charging in an ozone-generation hindering atmosphere including a non-ozone-generating gas, such as carbon dioxide. The corona charging method can be used, for example, in an image formation apparatus, in at least in one of a charging process, an image transfer process, or a charge quenching process for use therein.

摘要翻译： 一种在包括诸如二氧化碳的非臭氧发生气体的臭氧发生阻碍气氛中通过电晕充电对可充电材料进行充电的电晕充电方法。 电晕充电方法可以例如在图像形成装置中，至少在充电过程，图像转印处理或用于其中的充电淬灭处理中的一个中使用。

公开(公告)号：US6064850A

公开(公告)日：2000-05-16

申请号：US309344

申请日：1999-05-11

申请人： Minoru Matsuo ,  Toshio Kobayashi ,  Yuichi Jibiki

发明人： Minoru Matsuo ,  Toshio Kobayashi ,  Yuichi Jibiki

IPC分类号： G03G15/20

CPC分类号： G03G15/2003 ,  G03G15/2039 ,  G03G15/2053 ,  G03G2215/00548

摘要： An image formation apparatus includes an image fixing roller for performing thermal image fixing, which image fixing roller includes an exothermic phase transition layer capable of performing reversible phase transition from an amorphous state to a crystalline state and vice versa, with liberation of crystallization heat at the phase transition from the amorphous state to the crystalline state, and the crystallization heat is used for increasing the temperature elevation rate for the image fixing roller.

摘要翻译： 图像形成装置包括用于进行热图像定影的图像定影辊，该图像定影辊包括能够从非晶状态到结晶状态进行可逆相变的放热相变层，反之亦然，释放结晶热 从非晶状态到结晶状态的相变，结晶热用于提高图像定影辊的升温速度。

公开(公告)号：US5995781A

公开(公告)日：1999-11-30

申请号：US66777

申请日：1998-04-27

申请人： Minoru Matsuo

发明人： Minoru Matsuo

IPC分类号： G03G15/02 ,  G03G21/00

CPC分类号： G03G15/0258 ,  G03G15/0216 ,  G03G2215/021

摘要： An image formation apparatus includes an image bearing member which is capable of forming a latent electrostatic image thereon, a contact charging member which charges a surface of the image bearing member with the application of electric charges thereto, with the image bearing member and the charging member being in rotation contact, and a non-ozone-generating gas supply device for supplying a non-ozone-generating gas to a chargeable space which extends from a contact position of the contact charging member with the image bearing member and is positioned between (a) a surface of the contact charging memeber and (b) a surface of the image bearing member, with the surfaces facing each other, on an upstream side of the contact position with respect to a rotating direction of the contact charging member, the non-ozone-generating gas being capable of hindering the generation of ozone which is generated in the course of the application of electric charges to the surface of the image bearing member by the contact charging member.

摘要翻译： 图像形成装置包括能够在其上形成静电潜像的图像承载部件，对图像承载部件和充电部件施加电荷而对图像承载部件的表面进行充电的接触充电部件 以及非臭氧发生气体供给装置，用于将非臭氧发生气体供应到从所述接触充电部件与所述图像承载部件的接触位置延伸并且位于（a ）所述接触充电元件的表面和（b）所述图像承载元件的表面相对于所述接触充电元件的旋转方向在所述接触位置的上游侧彼此面对， 产生臭氧的气体能够阻碍在图像承载表面施加电荷过程中产生的臭氧 会员由接触充电组件。

公开(公告)号：US5268250A

公开(公告)日：1993-12-07

申请号：US870229

申请日：1992-04-20

申请人： Minoru Matsuo ,  Minoru Taguchi

发明人： Minoru Matsuo ,  Minoru Taguchi

IPC分类号： G03G5/047 ,  G03G5/05 ,  G03G15/02 ,  G03G5/00

CPC分类号： G03G5/0525 ,  G03G5/047 ,  G03G5/0564

摘要： Disclosed herein is an electrophotographic photoreceptor comprising a charge generation layer and a charge transport layer disposed in lamination on a substrate, in which at least one of said charge generation layer and said charge transport layer is a vacuum vapor deposition film containing a binding polymer.

摘要翻译： 本文公开了一种电子照相感光体，其包含电荷产生层和层叠于基板上的电荷输送层，其中至少一个所述电荷产生层和所述电荷输送层是含有结合聚合物的真空气相沉积膜。