公开(公告)号：US06882016B2

公开(公告)日：2005-04-19

申请号：US10663902

申请日：2003-09-17

申请人： Satoshi Takenaka

发明人： Satoshi Takenaka

IPC分类号： G02F1/1368 ,  H01L21/336 ,  H01L27/12 ,  H01L29/423 ,  H01L29/49 ,  H01L29/786 ,  H01L51/50 ,  H01L29/72

CPC分类号： H01L29/66757 ,  H01L27/12 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78621

摘要： A semiconductor device is provided including a transistor having excellent ON current characteristics and OFF leakage current characteristics, an electro-optical device holding an electro-optical material using the semiconductor device, an electronic apparatus using the electro-optical device, and a method for manufacturing the semiconductor device. For a transistor, a source region and a drain region are impurity regions heavily doped by a self-aligned method relative to a gate electrode. Parts of the gate insulating film overlapping with boundary regions of the channel formation region adjacent to the drain region and the source region, are thicker than a part of the gate insulating film overlapping with a center part of the channel formation region, relative to the longitudinal direction of the channel.

摘要翻译： 提供一种半导体器件，其包括具有优异的导通电流特性和截止漏电流特性的晶体管，使用该半导体器件保持电光材料的电光器件，使用该电光器件的电子设备及其制造方法 半导体器件。 对于晶体管，源极区域和漏极区域是通过相对于栅电极的自对准方法重掺杂的杂质区域。 与漏极区域和源极区域相邻的沟道形成区域的边界区域重叠的栅极绝缘膜的部分比栅极绝缘膜的与沟道形成区域的中心部分重叠的部分相对于纵向 渠道方向。

公开(公告)号：US06767772B2

公开(公告)日：2004-07-27

申请号：US10603823

申请日：2003-06-26

申请人： Satoshi Takenaka

发明人： Satoshi Takenaka

IPC分类号： H01L2100

CPC分类号： H01L27/14609 ,  H01L27/14687

摘要： The invention provides an active matrix substrate which allows the film quality of a MIS transistor to be evaluated easily and accurately, an electrooptical device using such an active matrix substrate, and a method of producing such an active matrix substrate. On an active matrix substrate, a film quality evaluation region with a size of 1 mm square is formed at a location where neither an image display area, a scanning line driving circuit, a data line driving circuit, nor a signal line is formed. A semiconductor film (silicon film) for film quality evaluation is formed in the film quality evaluation region using the same layer as a heavily doped source/drain region of a TFT and doped with the same impurity at the same concentration as the source/drain region. The semiconductor film for film quality evaluation is exposed through an opening formed through interlayer insulating films, so that it is possible to immediately start evaluation of the film equality.

摘要翻译： 本发明提供了一种允许MIS晶体管的膜质量容易且准确地评估的有源矩阵基板，使用这种有源矩阵基板的电光装置，以及制造这种有源矩阵基板的方法。 在有源矩阵基板上，在图像显示区域，扫描线驱动电路，数据线驱动电路以及信号线都不形成的位置形成尺寸为1mm见方的膜质量评价区域。 在膜质量评价区域中，使用与TFT的重掺杂源极/漏极区域相同的层并且以与源极/漏极区域相同的浓度掺杂相同的杂质形成用于膜质量评估的半导体膜（硅膜） 。 用于膜质量评估的半导体膜通过由层间绝缘膜形成的开口露出，从而可以立即开始评估膜的等级。

公开(公告)号：US06763335B1

公开(公告)日：2004-07-13

申请号：US09385841

申请日：1999-08-30

申请人： Yoshihide Nanbu ,  Hideo Haga ,  Masanori Konno ,  Yoshinori Kato ,  Masayuki Sofue ,  Masahiro Yamamoto ,  Masaya Watanuki ,  Satoshi Takenaka

发明人： Yoshihide Nanbu ,  Hideo Haga ,  Masanori Konno ,  Yoshinori Kato ,  Masayuki Sofue ,  Masahiro Yamamoto ,  Masaya Watanuki ,  Satoshi Takenaka

IPC分类号： G06F1760

CPC分类号： G06Q30/06 ,  G06Q30/0637

摘要： In an existing or new client/server system environment in which a plurality of clients are connected on a network, a function of specifying (selecting) a desired article by a requester, a function of requesting an approver to approve purchase of the specified article, and a function of determining approval or rejection for purchase of the approval-requested article by the approver are realized. A user logs in to this system as a requester or approver from a predetermined Web page displayed on the client in accordance with the user (employee) ID. A user who has logged in as an approver can also use the article specifying function and approval request function.

摘要翻译： 在网络上连接有多个客户端的现有或新的客户端/服务器系统环境中，由请求者指定（选择）期望的文章的功能，请求批准者批准购买指定的文章的功能， 并通过批准者确定批准或拒绝购买批准文件的功能。 用户根据用户（雇员）ID从客户端上显示的预定网页登录到该系统作为请求者或批准者。 作为审批者登录的用户也可以使用文章指定功能和批准请求功能。

公开(公告)号：US06910018B1

公开(公告)日：2005-06-21

申请号：US09386330

申请日：1999-08-30

申请人： Atsushi Okada ,  Masayuki Sofue ,  Naotsugu Hiroki ,  Masahiro Yamamoto ,  Masaya Watanuki ,  Satoshi Takenaka

发明人： Atsushi Okada ,  Masayuki Sofue ,  Naotsugu Hiroki ,  Masahiro Yamamoto ,  Masaya Watanuki ,  Satoshi Takenaka

IPC分类号： G06Q10/00 ,  G06Q10/06 ,  G06Q30/06 ,  G06Q50/00 ,  H04L12/02 ,  G06F17/60

CPC分类号： G06Q30/02 ,  G06Q30/0605 ,  G06Q30/0635 ,  G06Q30/0641

摘要： In a client-server environment in which a plurality of clients are connected on a network, a manager of a company displays an approval request list window (07-01-00) in which a list of purchase-requested articles is displayed, on a client by a predetermined operation, selects a desired article from the articles displayed in the window, and clicks a software button “approval select” or “rejection select” in accordance with approval or rejection of the selected article. At this time, the article for which approval is selected can be formally ordered.

摘要翻译： 在网络上连接有多个客户端的客户端 - 服务器环境中，公司的管理者显示在其中显示购买请求的文章的列表的批准请求列表窗口（07-01-01） 客户端通过预定操作从所述窗口中显示的物品中选择期望的物品，并且根据所选择的物品的批准或拒绝点击软件按钮“批准选择”或“拒绝选择”。 此时可以正式订购批准文章。

公开(公告)号：US06808965B1

公开(公告)日：2004-10-26

申请号：US08406892

申请日：1995-03-27

申请人： Mitsutoshi Miyasaka ,  Yojiro Matsueda ,  Satoshi Takenaka

发明人： Mitsutoshi Miyasaka ,  Yojiro Matsueda ,  Satoshi Takenaka

IPC分类号： H01L2100

CPC分类号： H01L21/0262 ,  G02F1/13454 ,  G09G3/2011 ,  G09G3/3611 ,  G09G3/3648 ,  G09G3/3688 ,  G09G2310/027 ,  G09G2310/0283 ,  G09G2310/0289 ,  G09G2320/028 ,  G09G2330/021 ,  H01L21/0242 ,  H01L21/02488 ,  H01L21/02532 ,  H01L27/1214 ,  H01L29/66757 ,  H01L29/78618 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78675

摘要： A high-performance thin-film semiconductor device and a simple fabrication method is provided. After a silicon film is deposited at approximately 530° C. or less and at a deposition rate of at least approximately 6 Å/minute, thermal oxidation is performed. This ensures an easy-and simple fabrication of a high-performance thin-film semiconductor device. A thin-film semiconductor device capable of low-voltage and high-speed drive is provided. The short-channel type of a TFT circuit with an LDD structure reduces a threshold voltage, increases speed, restrains the power consumption and increases a breakdown voltage. The operational speed of the thin-film semiconductor device is further increased by optimizing the maximum impurity concentration of an LDD portion, a source portion a drain portion, as well as optimizing the LDD length and the channel length. A display system is provided using these TFTs having drive signals at or below approximately the TTL level.

摘要翻译： 提供了高性能的薄膜半导体器件和简单的制造方法。 在约530℃或更低的沉积速率和至少约6 /分钟的沉积速率下沉积硅膜之后，进行热氧化。 这确保了容易且简单地制造高性能薄膜半导体器件。 提供能够进行低电压和高速驱动的薄膜半导体器件。 具有LDD结构的TFT电路的短沟道类型降低阈值电压，增加速度，抑制功耗并增加击穿电压。 通过优化LDD部分，源部分，漏极部分的最大杂质浓度以及优化LDD长度和沟道长度，进一步提高薄膜半导体器件的操作速度。 使用具有等于或低于大约TTL电平的驱动信号的这些TFT来提供显示系统。

公开(公告)号：US06765637B2

公开(公告)日：2004-07-20

申请号：US10314304

申请日：2002-12-09

申请人： Satoshi Takenaka

发明人： Satoshi Takenaka

IPC分类号： G02F11335

CPC分类号： G02F1/133555

摘要： The present invention provides a translucent reflection type electro-optic device that can increase a display light amount in both a reflection mode and a transmission mode, an electronic instrument therewith, and a method of fabricating the translucent reflection type electro-optic device. In a TFT array substrate of a reflection type electro-optic device, on a bottom layer side of a light reflection film, a concavity and convexity formation layer that forms a concavity and convexity pattern can be formed with a first photosensitive resin having a refractive index, n1, on a top layer of the concavity and convexity formation layer a top layer insulating film made of a second photosensitive resin having a refractive index, n2 (n1>n2), is formed, and at a position that overlaps with convexities of the concavity and convexity pattern, a light transmission window is formed. Accordingly, an interface between the concavity and convexity formation layer and the top layer insulating film plays a function as a condenser lens that refracts a light incident from a back surface side toward the light transmission window.

摘要翻译： 本发明提供了一种能够增加反射模式和透射模式下的显示光量的半透明反射型电光装置及其电子仪器，以及制造半透射反射型电光装置的方法。 在反射型电光装置的TFT阵列基板中，在光反射膜的底层侧，形成凹凸图案的凹凸形成层可以由具有折射率的第一感光性树脂形成 n1在凹凸形成层的顶层上形成由具有折射率n2（n1> n2）的第二感光性树脂构成的顶层绝缘膜，并且在与凸部的凸部重叠的位置 凹凸图案形成有透光窗。 因此，凹凸形成层和顶层绝缘膜之间的界面起着将从背面侧入射的光朝向透光窗折射的聚光透镜的作用。

公开(公告)号：US5563427A

公开(公告)日：1996-10-08

申请号：US313310

申请日：1994-12-06

申请人： Ichio Yudasaka ,  Minoru Matsuo ,  Satoshi Takenaka

发明人： Ichio Yudasaka ,  Minoru Matsuo ,  Satoshi Takenaka

IPC分类号： G02F1/1362 ,  H01L21/223 ,  H01L21/30 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L27/01 ,  H01L29/04 ,  H01L29/76

CPC分类号： G02F1/13454 ,  H01L21/2236 ,  H01L21/3003 ,  H01L27/1251 ,  H01L27/127 ,  H01L29/66757 ,  H01L29/78618 ,  H01L29/78621

摘要： In the formation of a thin-film transistor (620) capable of improving the OFF current characteristic, first, all ions (arrow Ion-1) generated from a mixed gas (doping gas) containing 5% PH.sub.3 with the remainder being H.sub.2 gas are implanted to a polycrystalline silicon film (604) at an approximately 80 keV energy level to achieve a P.sup.+ ion dose in the range from 3.times.10.sup.13 /cm.sup.2 to 1.times.10.sup.14 /cm.sup.2 in the process forming low concentration source-drain areas (602, 603). Next, all ions generated from a doping gas of pure hydrogen (arrow Ion-2) are implanted to the low concentration area (604a) at an approximately 20 keV energy level to achieve an H.sup.+ ion dose from 1.times.10.sup.14 /cm.sup.2 to 1.times.10.sup.15 /cm.sup.2. Then, the impurity is activated by heat treatment of the low concentration area (604a) implanted with impurity for approximately one hour at approximately 300.degree. C. in a nitrogen atmosphere.

摘要翻译： PCT No.PCT / JP94 / 00189 Sec。 371日期1994年12月6日第 102（e）日期1994年12月6日PCT 1994年2月9日PCT PCT。 WO94 / 18706 PCT公开号 日期1994年8月18日在形成能够改善截止电流特性的薄膜晶体管（620）的情况下，首先，从含有5％PH 3的混合气体（掺杂气体）产生的所有离子（箭头Ion-1） 剩余部分为H2气体以大约80keV能级注入多晶硅膜（604），以在形成低浓度源极 - 漏极区域（602）的过程中实现3×10 13 / cm 2至1×10 14 / cm 2范围内的P +离子剂量 ，603）。 接下来，从纯氢（箭头Ion-2）的掺杂气体产生的所有离子以大约20keV能级注入低浓度区域（604a），以实现从1×10 14 / cm 2到1×10 15 / cm 2的H +离子剂量。 然后，在氮气气氛中，在大约300℃下，通过对注入杂质的低浓度区域（604a）进行约1小时的热处理来激活杂质。

公开(公告)号：US06614053B1

公开(公告)日：2003-09-02

申请号：US09524275

申请日：2000-03-13

申请人： Satoshi Takenaka

发明人： Satoshi Takenaka

IPC分类号： H01L310368

CPC分类号： H01L27/14609 ,  H01L27/14687

摘要： The invention provides an active matrix substrate which allows the film quality of a MIS transistor to be evaluated easily and accurately, an electrooptical device using such an active matrix substrate, and a method of producing such an active matrix substrate. On an active matrix substrate, a film quality evaluation region with a size of 1 mm square is formed at a location where neither an image display area, a scanning line driving circuit, a data line driving circuit, nor a signal line is formed. A semiconductor film (silicon film) for film quality evaluation is formed in the film quality evaluation region using the same layer as a heavily doped source/drain region of a TFT and doped with the same impurity at the same concentration as the source/drain region. The semiconductor film for film quality evaluation is exposed through an opening formed through interlayer insulating films, so that it is possible to immediately start evaluation of the film equality.

摘要翻译： 本发明提供了一种允许MIS晶体管的膜质量容易且准确地评估的有源矩阵基板，使用这种有源矩阵基板的电光装置，以及制造这种有源矩阵基板的方法。 在有源矩阵基板上，在图像显示区域，扫描线驱动电路，数据线驱动电路以及信号线都不形成的位置形成尺寸为1mm见方的膜质量评价区域。 在膜质量评价区域中，使用与TFT的重掺杂源极/漏极区域相同的层并且以与源极/漏极区域相同的浓度掺杂相同的杂质形成用于膜质量评估的半导体膜（硅膜） 。 用于膜质量评估的半导体膜通过由层间绝缘膜形成的开口露出，从而可以立即开始评估膜的等级。

公开(公告)号：US06403497B1

公开(公告)日：2002-06-11

申请号：US09568917

申请日：2000-05-10

申请人： Hideaki Oka ,  Satoshi Takenaka ,  Masafumi Kunii

发明人： Hideaki Oka ,  Satoshi Takenaka ,  Masafumi Kunii

IPC分类号： H01L2131

CPC分类号： H01L21/02667 ,  H01L21/2022 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78675

摘要： A polycrystalline or polysilicon film having large grain size, such as 1 &mgr;m to 2 &mgr;m in diameter or greater, is obtained over the methods of the prior art by initially forming a silicon film, which may be comprised of amorphous silicon or micro-crystalline silicon or contains micro-crystal regions in the amorphous phase, at a low temperature via a chemical vapor deposition (CVD) method, such as by plasma chemical vapor deposition (PCVD) with silane gas diluted with, for example, hydrogen, argon or helium at a temperature, for example, in the range of room temperature to 600° C. This is followed by solid phase recrystallization of the film to form a polycrystalline film which is conducted at a relatively low temperature in the range of about 550° C. to 650° C. in an inert atmosphere, e.g., N or Ar, for a period of about several hours to 40 or more hours wherein the temperature is gradually increased, e.g., at a temperature rise rate below 20° C./min, preferably about 5° C./min, to a prescribed recrystallization temperature within the range about 550° C. to 650° C. Further, between the step of film formation and the step of solid phase recrystallization, the film may be thermally treated at a relatively low temperature, e.g., over 300° C. and preferably between approximately 400° C. to 500° C. for a period of several minutes, such as 30 minutes, to remove hydrogen from the film prior to solid phase recrystallization.

摘要翻译： 通过最初形成可以由非晶硅或微晶硅构成的硅膜，通过现有技术的方法获得具有大晶粒尺寸，例如1μm至2μm直径或更大的多晶或多晶硅膜 或在低温下通过化学气相沉积（CVD）方法，例如通过等离子体化学气相沉积（PCVD），其中硅烷气体用例如氢气，氩气或氦气稀释，在非晶相中包含微晶区域。 温度例如在室温至600℃的范围内。随后进行固相重结晶以形成多晶膜，该多晶膜在相对较低的温度下在约550℃至 在惰性气氛（例如N或Ar）中，在温度逐渐升高的情况下，例如在升温速率低于20℃/分钟的情况下，时间为约数小时-40小时，优选为650℃ 约5℃/分钟 在约550℃至650℃的范围内的规定的再结晶温度。此外，在成膜步骤和固相重结晶步骤之间，可以在相对较低的温度例如超过300℃下热处理该膜 并且优选在约400℃至500℃之间，持续数分钟，例如30分钟的时间，以在固相重结晶之前从膜中除去氢。

公开(公告)号：US06180957B2

公开(公告)日：2001-01-30

申请号：US08827732

申请日：1997-04-08

申请人： Mitsutoshi Miyasaka ,  Yojiro Matsueda ,  Satoshi Takenaka

发明人： Mitsutoshi Miyasaka ,  Yojiro Matsueda ,  Satoshi Takenaka

IPC分类号： H01L27088

CPC分类号： H01L21/0262 ,  G02F1/13454 ,  G09G3/2011 ,  G09G3/3611 ,  G09G3/3648 ,  G09G3/3688 ,  G09G2310/027 ,  G09G2310/0283 ,  G09G2310/0289 ,  G09G2320/028 ,  G09G2330/021 ,  H01L21/0242 ,  H01L21/02488 ,  H01L21/02532 ,  H01L27/1214 ,  H01L29/66757 ,  H01L29/78618 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78675

摘要： A high-performance thin-film semiconductor device and a simple fabrication method is provided. After a silicon film is deposited at approximately or less 580° C. and at a deposition rate of at least approximately 6 Å/minute, thermal oxidation is performed. This ensures an easy and simple fabrication of a high-performance thin-film semiconductor device. A thin-film semiconductor device capable of low-voltage and high-speed drive is provided. The short-channel type of a TFT circuit with an LDD structure reduces a threshold voltage, increases speed, restrains the power consumption and increases a breakdown voltage. The operational speeds of the thin-film semiconductor device is further increased by optimizing the maximum impurity concentration of an LDD portion, a source portion a drain portion, as well as optimizing the LDD length and the channel length. A display system is provided using these TFTs having drive signals at or below approximately the TTL level.

摘要翻译： 提供了高性能的薄膜半导体器件和简单的制造方法。 在大约低于580℃和至少约6 /分钟的沉积速率沉积硅膜之后，进行热氧化。 这确保了高性能薄膜半导体器件的简单且简单的制造。 提供能够进行低电压和高速驱动的薄膜半导体器件。 具有LDD结构的TFT电路的短沟道类型降低阈值电压，增加速度，抑制功耗并增加击穿电压。 通过优化LDD部分，源部分，漏极部分的最大杂质浓度以及优化LDD长度和沟道长度，进一步提高薄膜半导体器件的操作速度。 使用具有等于或低于大约TTL电平的驱动信号的这些TFT来提供显示系统。