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    Member for semiconductor manufacturing apparatus
    5.
    发明授权
    Member for semiconductor manufacturing apparatus 有权
    半导体制造设备会员

    公开(公告)号：US08908349B2

    公开(公告)日：2014-12-09

    申请号：US13420810

    申请日：2012-03-15

    申请人： Masahiro Kida ,  Toru Hayase ,  Yuji Katsuda

    发明人： Masahiro Kida ,  Toru Hayase ,  Yuji Katsuda

    IPC分类号： H02N13/00 ,  H01L21/683

    CPC分类号： H01L21/6833

    摘要： An electrostatic chuck is provided with a ceramic substrate 12 in which an electrode 14 is embedded, an electrode terminal 14a exposed at the bottom of a concave portion 16 disposed on the back surface of the ceramic substrate 12, a power feed member 20 to supply an electric power to the electrode 14, and a joining layer 22 to connect this power feed member 20 to the ceramic substrate 12. The joining layer 22 is formed by using a AuGe based alloy, a AuSn based alloy, or a AuSi based alloy. The ceramic substrate 12 and the power feed member 20 are selected in such a way that the thermal expansion coefficient difference D calculated by subtracting the thermal expansion coefficient of the ceramic substrate 12 from the thermal expansion coefficient of the power feed member 20 satisfies −2.2≦D≦6 (unit: ppm/K).

    摘要翻译： 静电吸盘设置有嵌入电极14的陶瓷基板12，暴露在设置在陶瓷基板12的背面的凹部16的底部的电极端子14a，供电部件20 电极14的电力，以及将该供电部件20连接到陶瓷基板12的接合层22.接合层22通过使用AuGe系合金，AuSn系合金或AuSi系合金形成。 选择陶瓷基板12和供电部件20，使得通过从供电部件20的热膨胀系数减去陶瓷基板12的热膨胀系数而计算的热膨胀系数差D满足-2.2＆lt; ; D＆nlE; 6（单位：ppm / K）。

    Sintered ceramic body, manufacturing method thereof, and ceramic structure
    6.
    发明授权
    Sintered ceramic body, manufacturing method thereof, and ceramic structure 有权
    烧结陶瓷体及其制造方法和陶瓷结构体

    公开(公告)号：US08603625B2

    公开(公告)日：2013-12-10

    申请号：US12913107

    申请日：2010-10-27

    申请人： Yunie Izumi ,  Yoshimasa Kobayashi ,  Yuji Katsuda

    发明人： Yunie Izumi ,  Yoshimasa Kobayashi ,  Yuji Katsuda

    IPC分类号： B32B5/16 ,  C04B35/64

    CPC分类号： C04B35/18 ,  C04B35/16 ,  C04B35/195 ,  Y10T428/12597 ,  Y10T428/257

    摘要： A manufacturing method of a sintered ceramic body mixes barium silicate with aluminum oxide, a glass material, and an additive oxide to prepare a material mixture, molds the material mixture and fires the molded object. The barium silicate is monoclinic and has an average particle diameter in a range of 0.3 μm to 1 μm and a specific surface area in a range of 5 m2/g to 20 m2/g. The aluminum oxide has an average particle diameter in a range of 0.4 μm to 10 μm, a specific surface area in a range of 0.8 m2/g to 8 m2/g. A volume ratio of the aluminum oxide to the barium silicate is in a range of 10% by volume to 25% by volume.

    摘要翻译： 烧结陶瓷体的制造方法将硅酸钡与氧化铝，玻璃材料和添加剂氧化物混合以制备材料混合物，模塑材料混合物并使其成型。 硅酸钡为单斜晶系，平均粒径为0.3μm〜1μm，比表面积为5m 2 / g〜20m 2 / g。 氧化铝的平均粒径为0.4μm〜10μm，比表面积为0.8m 2 / g〜8m 2 / g。 氧化铝与硅酸钡的体积比在10体积％〜25体积％的范围内。

    Aluminum nitride sintered body, metal embedded article, electronic functional material and electrostatic chuck
    10.
    发明授权
    Aluminum nitride sintered body, metal embedded article, electronic functional material and electrostatic chuck 失效
    氮化铝烧结体，金属嵌入制品，电子功能材料和静电吸盘

    公开(公告)号：US6001760A

    公开(公告)日：1999-12-14

    申请号：US824560

    申请日：1997-03-25

    申请人： Yuji Katsuda ,  Yukimasa Mori ,  Michio Takahashi ,  Yuki Bessho

    发明人： Yuji Katsuda ,  Yukimasa Mori ,  Michio Takahashi ,  Yuki Bessho

    IPC分类号： C04B35/581 ,  H01L21/683

    CPC分类号： C04B35/581 ,  H01L21/6833 ,  Y10T279/23

    摘要： In AlN crystal grains constituting a sintered body, is contained: 150 ppm-0.5 wt. %, preferably at most 0.1 wt.%, of at least one rare earth element (as oxide thereof); at most 900 ppm, preferably at most 500 ppm of at least one metal impurity except rare earth elements; and preferably at least 0.5 wt. % of oxygen measured by an electron probe X-ray microanalyzer. The grains have an average grain diameter of preferably at least 3.0 .mu.m and show a main peak in the wavelength range of 350-370 nm of spectrum obtained by a cathode luminescence method. The sintered body composed of AlN crystal grains has a volume resistivity at room temperature of at most 1.0.times.10.sup.12 .OMEGA..multidot.cm.

    摘要翻译： 在构成烧结体的AlN晶粒中含有150ppm-0.5wt。 ％，优选至多0.1重量％的至少一种稀土元素（作为其氧化物）; 至少一个金属杂质除了稀土元素之外，最多900ppm，优选至多500ppm; 优选至少0.5wt。 通过电子探针X射线微量分析仪测量的氧的百分比。 晶粒的平均粒径优选为3.0μm以上，在通过阴极发光法得到的光谱的350〜370nm的波长范围内呈现主峰。 由AlN晶粒构成的烧结体的体积电阻率在室温下为1.0×10 12Ω以下，OMEGA×cm。