公开(公告)号：US20120154007A1

公开(公告)日：2012-06-21

申请号：US13228903

申请日：2011-09-09

申请人： Motoki IMANISHI ,  Kenji Sakai ,  Yoshikazu Tanaka ,  Kyouko Oyama

发明人： Motoki IMANISHI ,  Kenji Sakai ,  Yoshikazu Tanaka ,  Kyouko Oyama

IPC分类号： H03K3/356

CPC分类号： H03K17/162 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor circuit of the present invention comprises a capacitor for charging ON driven electric charges in response to an ON driving signal, a capacitor for charging OFF driven electric charges in response to an OFF driving signal, a signal generating circuit for generating a first trigger signal in response to the ON driving signal, a signal generating circuit for generating a second trigger signal in response to the OFF driving signal, a discharging circuit for discharging the ON driven electric charges in response to the second trigger signal, and a discharging circuit for discharging the OFF driven electric charges in response to the first trigger signal. With this configuration, it is possible to provide a semiconductor circuit and a semiconductor device both of which have a general-purpose malfunction prevention function by which a malfunction due to dV/dt can be prevented without being affected by any external factor.

摘要翻译： 本发明的半导体电路包括：用于响应于ON驱动信号对接通驱动电荷进行充电的电容器;响应于OFF驱动信号而对驱动电荷进行充电的电容器;产生第一触发信号的信号产生电路 响应于ON驱动信号，产生响应于OFF驱动信号产生第二触发信号的信号发生电路，用于响应于第二触发信号对ON驱动电荷进行放电的放电电路，以及用于放电的放电电路 OFF驱动电荷响应于第一触发信号。 利用这种结构，可以提供一种具有通用故障防止功能的半导体电路和半导体器件，通过该功能可以防止由于dV / dt引起的故障，而不受任何外部因素的影响。

公开(公告)号：US08803561B2

公开(公告)日：2014-08-12

申请号：US13228903

申请日：2011-09-09

申请人： Motoki Imanishi ,  Kenji Sakai ,  Yoshikazu Tanaka ,  Kyouko Oyama

发明人： Motoki Imanishi ,  Kenji Sakai ,  Yoshikazu Tanaka ,  Kyouko Oyama

IPC分类号： H03K3/00

CPC分类号： H03K17/162 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor circuit of the present invention comprises a capacitor for charging ON driven electric charges in response to an ON driving signal, a capacitor for charging OFF driven electric charges in response to an OFF driving signal, a signal generating circuit for generating a first trigger signal in response to the ON driving signal, a signal generating circuit for generating a second trigger signal in response to the OFF driving signal, a discharging circuit for discharging the ON driven electric charges in response to the second trigger signal, and a discharging circuit for discharging the OFF driven electric charges in response to the first trigger signal. With this configuration, it is possible to provide a semiconductor circuit and a semiconductor device both of which have a general-purpose malfunction prevention function by which a malfunction due to dV/dt can be prevented without being affected by any external factor.

摘要翻译： 本发明的半导体电路包括：用于响应于ON驱动信号对接通驱动电荷进行充电的电容器;响应于OFF驱动信号而对驱动电荷进行充电的电容器;产生第一触发信号的信号产生电路 响应于ON驱动信号，产生响应于OFF驱动信号产生第二触发信号的信号发生电路，用于响应于第二触发信号对ON驱动电荷进行放电的放电电路，以及用于放电的放电电路 OFF驱动电荷响应于第一触发信号。 利用这种结构，可以提供一种具有通用故障防止功能的半导体电路和半导体器件，通过该功能可以防止由于dV / dt引起的故障，而不受任何外部因素的影响。

公开(公告)号：US08724357B2

公开(公告)日：2014-05-13

申请号：US13010178

申请日：2011-01-20

申请人： Motoki Imanishi ,  Kenji Sakai ,  Yoshikazu Tanaka

发明人： Motoki Imanishi ,  Kenji Sakai ,  Yoshikazu Tanaka

IPC分类号： H02M7/5387 ,  H02M1/084

CPC分类号： H02M1/08 ,  H03K17/063

摘要： A power semiconductor device comprises: high side and low side switching elements; high side and low side drive circuits; a bootstrap capacitor supplying a drive voltage to the high side drive circuit and having a first terminal connected to a connection point between the high side switching element and the low side switching element and a second terminal connected to a power supply terminal of the high side drive circuit; a bootstrap diode having an anode connected to a power supply and a cathode connected to the second terminal and supplying a current from the power supply to the second terminal; a floating power supply; and a bootstrap compensation circuit supplying a current from the floating power supply to the second terminal, when the high side drive circuit turns ON the high side switching element and the low side drive circuit turns OFF the low side switching element.

摘要翻译： 功率半导体器件包括：高侧和低侧开关元件; 高侧和低侧驱动电路; 向高侧驱动电路供给驱动电压并具有与高侧开关元件和低侧开关元件之间的连接点连接的第一端子的自举电容器和连接到高侧驱动器的电源端子的第二端子 电路 引导二极管，其具有连接到电源的阳极和连接到第二端子的阴极，并且将电流从电源提供给第二端子; 浮动电源; 以及当所述高侧驱动电路导通所述高侧开关元件并且所述低侧驱动电路使所述低侧开关元件断开时，从所述浮动电源向所述第二端子供给电流的自举补偿电路。

公开(公告)号：US20110260707A1

公开(公告)日：2011-10-27

申请号：US13010178

申请日：2011-01-20

申请人： Motoki IMANISHI ,  Kenji Sakai ,  Yoshikazu Tanaka

发明人： Motoki IMANISHI ,  Kenji Sakai ,  Yoshikazu Tanaka

IPC分类号： G05F3/02

CPC分类号： H02M1/08 ,  H03K17/063

摘要： A power semiconductor device comprises: high side and low side switching elements; high side and low side drive circuits; a bootstrap capacitor supplying a drive voltage to the high side drive circuit and having a first terminal connected to a connection point between the high side switching element and the low side switching element and a second terminal connected to a power supply terminal of the high side drive circuit; a bootstrap diode having an anode connected to a power supply and a cathode connected to the second terminal and supplying a current from the power supply to the second terminal; a floating power supply; and a bootstrap compensation circuit supplying a current from the floating power supply to the second terminal, when the high side drive circuit turns ON the high side switching element and the low side drive circuit turns OFF the low side switching element.

摘要翻译： 功率半导体器件包括：高侧和低侧开关元件; 高侧和低侧驱动电路; 向高侧驱动电路供给驱动电压并具有与高侧开关元件和低侧开关元件之间的连接点连接的第一端子的自举电容器和连接到高侧驱动器的电源端子的第二端子 电路 引导二极管，其具有连接到电源的阳极和连接到第二端子的阴极，并且将电流从电源提供给第二端子; 浮动电源; 以及当所述高侧驱动电路导通所述高侧开关元件并且所述低侧驱动电路使所述低侧开关元件断开时，从所述浮动电源向所述第二端子供给电流的自举补偿电路。

公开(公告)号：US06856166B2

公开(公告)日：2005-02-15

申请号：US10388497

申请日：2003-03-17

申请人： Kenji Sakai ,  Yoshikazu Tanaka

发明人： Kenji Sakai ,  Yoshikazu Tanaka

IPC分类号： H03K5/1532 ,  G06F7/38 ,  H03K5/04 ,  H03K5/135 ,  H03K5/153 ,  H03K19/00 ,  H03K19/173

CPC分类号： H03K5/135 ,  H03K5/04 ,  H03K5/153

摘要： In a status scheme signal processing circuit which obtains a desired output signal on the basis of an OR signal between a pulse output from a one-shot pulse circuit at an edge of an input signal and a status signal, since the input signal and the status signal are not synchronized with each other, the output timing of the output signal changes depending on the timing of the input signal. Therefore, in the present invention, a mask signal generator which outputs a mask signal having a predetermined bandwidth T1 in response to a signal leading edge and a signal trailing edge of the input signal, and said desired output signal is masked (disabled) with the mask signal, so that an output signal is always obtained a predetermined period (T1) after the input timing of the input signal.

摘要翻译： 在状态方案信号处理电路中，根据在输入信号的边缘的单触发脉冲电路输出的脉冲与状态信号之间的或信号获得期望的输出信号，由于输入信号和状态 信号彼此不同步，输出信号的输出定时根据输入信号的定时而改变。 因此，在本发明中，掩蔽信号发生器响应于输入信号的信号前沿和信号后沿输出具有预定带宽T1的屏蔽信号和所述期望输出信号被屏蔽（禁用） 掩模信号，使得在输入信号的输入定时之后总是获得预定周期（T1）的输出信号。

公开(公告)号：US20080278215A1

公开(公告)日：2008-11-13

申请号：US11860123

申请日：2007-09-24

申请人： Kenji Sakai ,  Yoshikazu Tanaka

发明人： Kenji Sakai ,  Yoshikazu Tanaka

IPC分类号： H03K17/28

CPC分类号： H02M1/08 ,  H03K17/162 ,  H03K17/284 ,  H03K17/6871 ,  H03K19/018507

摘要： A semiconductor device according to the present invention is a semiconductor device for driving and controlling a power device in the high-potential side of two power devices connected in series between a main power source potential of a high potential and a main power source potential of a low potential, and is equipped with a pulse generating circuit for generating first and second pulse signals corresponding to the level transition to first and second states of input signals having a first state showing the conduction of the power device in the high-potential side and a second state showing the non-conduction of the power device in the high-potential side, respectively; a level shift circuit for obtaining first and second level-shifted pulse signals by level-shifting the first and second pulse signals to the high-potential side; an SR-type flip-flop circuit inputting the first level-shifted pulse signals from set input terminal and the second level-shifted pulse signals from reset input terminal; and a delay circuit for delaying the output of the SR-type flip-flop circuit by at least the pulse width of the first and second pulse signals.

摘要翻译： 根据本发明的半导体器件是用于驱动和控制在高电位的主电源电位和主电源电位之间串联连接的两个功率器件的高电位侧的功率器件的半导体器件 低电位，并且配备有脉冲发生电路，用于产生对应于具有第一状态的第一和第二状态的第一和第二状态的电平转变的第一和第二脉冲信号，该第一状态具有示出高电位侧的功率器件的导通和 分别表示高电位侧的功率器件的非导通的第二状态; 电平移位电路，用于通过将第一和第二脉冲信号电平移位到高电位侧来获得第一和第二电平移位脉冲信号; 输入来自设定输入端的第一电平移位脉冲信号和来自复位输入端的第二电平移位脉冲信号的SR型触发电路; 以及用于将SR型触发器电路的输出至少延迟第一和第二脉冲信号的脉冲宽度的延迟电路。

公开(公告)号：US07495482B2

公开(公告)日：2009-02-24

申请号：US11860123

申请日：2007-09-24

申请人： Kenji Sakai ,  Yoshikazu Tanaka

发明人： Kenji Sakai ,  Yoshikazu Tanaka

IPC分类号： H03B1/00

CPC分类号： H02M1/08 ,  H03K17/162 ,  H03K17/284 ,  H03K17/6871 ,  H03K19/018507

摘要： A semiconductor device according to the present invention is a semiconductor device for driving and controlling a power device in the high-potential side of two power devices connected in series between a main power source potential of a high potential and a main power source potential of a low potential, and is equipped with a pulse generating circuit for generating first and second pulse signals corresponding to the level transition to first and second states of input signals having a first state showing the conduction of the power device in the high-potential side and a second state showing the non-conduction of the power device in the high-potential side, respectively; a level shift circuit for obtaining first and second level-shifted pulse signals by level-shifting the first and second pulse signals to the high-potential side; an SR-type flip-flop circuit inputting the first level-shifted pulse signals from set input terminal and the second level-shifted pulse signals from reset input terminal; and a delay circuit for delaying the output of the SR-type flip-flop circuit by at least the pulse width of the first and second pulse signals.

摘要翻译： 根据本发明的半导体器件是用于驱动和控制在高电位的主电源电位和主电源电位之间串联连接的两个功率器件的高电位侧的功率器件的半导体器件 低电位，并且配备有脉冲发生电路，用于产生对应于具有第一状态的第一和第二状态的第一和第二状态的电平转变的第一和第二脉冲信号，该第一状态具有示出高电位侧的功率器件的导通和 分别表示高电位侧的功率器件的非导通的第二状态; 电平移位电路，用于通过将第一和第二脉冲信号电平移位到高电位侧来获得第一和第二电平移位脉冲信号; 输入来自设定输入端的第一电平移位脉冲信号和来自复位输入端的第二电平移位脉冲信号的SR型触发电路; 以及用于将SR型触发器电路的输出至少延迟第一和第二脉冲信号的脉冲宽度的延迟电路。

公开(公告)号：US09114699B2

公开(公告)日：2015-08-25

申请号：US13883495

申请日：2011-11-07

申请人： Yasuhito Takei ,  Yoshikazu Tanaka ,  Toshiharu Kumagai ,  Ken Hayasaka ,  Masahiro Yoshizawa

发明人： Yasuhito Takei ,  Yoshikazu Tanaka ,  Toshiharu Kumagai ,  Ken Hayasaka ,  Masahiro Yoshizawa

IPC分类号： F16H37/06 ,  B60K6/50 ,  B60K6/365 ,  B60K6/445 ,  B60K6/547 ,  F16H3/72 ,  B60K6/387 ,  B60K6/48 ,  F16H37/08 ,  F16H37/10

CPC分类号： B60K6/50 ,  B60K6/365 ,  B60K6/387 ,  B60K6/445 ,  B60K6/48 ,  B60K6/547 ,  F16H3/728 ,  F16H2037/0886 ,  F16H2037/101 ,  F16H2200/0043 ,  F16H2200/0047 ,  F16H2200/0052 ,  F16H2200/2005 ,  F16H2200/2007 ,  F16H2200/2041 ,  F16H2200/2043 ,  F16H2200/2097 ,  Y02T10/6221 ,  Y02T10/6239 ,  Y10S903/902

摘要： In a hybrid drive apparatus, a first planetary gear mechanism transmits rotation of a first main shaft to which the engine driving force is inputted to a main speed-changing part at an equal speed due to engagement of a first clutch, and transmits the rotation of the first main shaft to the main speed-changing part and a first motor/generator at an increased speed due to engagement of a second clutch. This enables the range of gear ratios of the transmission to be extended and the degree of freedom in setting a gear ratio or a step ratio to be increased, and enhances the power generation efficiency by rotating the first motor/generator at a high speed without using a special speed increase device.

摘要翻译： 在混合动力驱动装置中，第一行星齿轮机构由于第一离合器的接合而以相同的速度将发动机驱动力输入到的主变速部的第一主轴的旋转传递到主变速部， 主变速部分的第一主轴和由于第二离合器的接合而以增加的速度的第一电动机/发电机。 这样可以使传动装置的传动比范围扩大，并且使齿轮比或步进比的设定自由度提高，并且通过高速旋转第一电动机/发电机而提高发电效率，而不使用 特殊加速装置。

公开(公告)号：US09057076B2

公开(公告)日：2015-06-16

申请号：US13259749

申请日：2010-03-25

申请人： Yuko Fukui ,  Yoshikazu Tanaka

发明人： Yuko Fukui ,  Yoshikazu Tanaka

IPC分类号： C07D311/62 ,  C12N15/82 ,  A01H5/02 ,  C07D493/16 ,  C07H13/08 ,  C12N9/02 ,  C12N9/10

CPC分类号： C12N15/825 ,  A01H5/02 ,  A01H6/749 ,  C07D493/16 ,  C07H13/08 ,  C12N9/0071 ,  C12N9/0073 ,  C12N9/1029

摘要： Disclosed is a novel compound contained in blue rose. This novel compound, which is contained in blue rose, has a chemical structure represented by general formula (I): [wherein R1 is a group as set forth in claim 1; and R2 represents —OH, or R1 and R2 together form —O—]. Also disclosed are a rose plant containing the aforesaid compound, and a part of the same.

摘要翻译： 公开了蓝玫瑰中含有的新化合物。 包含在蓝玫瑰中的这种新化合物具有由通式（I）表示的化学结构：[其中R1是如权利要求1所述的基团; 并且R 2表示-OH，或者R 1和R 2一起形成-O-]。 还公开了含有上述化合物及其一部分的玫瑰植物。

公开(公告)号：US09011396B2

公开(公告)日：2015-04-21

申请号：US13578843

申请日：2011-02-17

申请人： Kaiyo Nakajima ,  Haruki Toda ,  Yoshikazu Tanaka

发明人： Kaiyo Nakajima ,  Haruki Toda ,  Yoshikazu Tanaka

IPC分类号： A61F13/15 ,  A61F13/49 ,  A61F13/511 ,  A61F13/74 ,  A61F13/76 ,  A61F13/494 ,  A61F13/513 ,  A61F13/00

CPC分类号： A61F13/49011 ,  A61F13/49466 ,  A61F13/5116 ,  A61F13/513 ,  A61F2013/00404 ,  A61F2013/15024 ,  A61F2013/15154 ,  A61F2013/51182 ,  A61F2013/51316

摘要： A disposable wearing article has a skin-contactable sheet moveable relative to a chassis. The chassis includes an inner sheet, an outer sheet and a liquid-absorbent panel interposed between these inner and outer sheets. The absorbent panel lies at least in the crotch region and extends into the front and rear waist regions in the longitudinal direction. In the rear waist region, a skin-contactable sheet adapted to come in contact with the wearer's skin is attached to the inner surface of the inner sheet. The skin-contactable sheet has front and rear ends extending in the transverse direction and lateral portions extending in the longitudinal direction and only the lateral portions are bonded to the inner sheet.

摘要翻译： 一次性穿着物品具有可相对于底盘移动的皮肤接触片材。 底盘包括内片，外片和介于这些内片和外片之间的吸液性片。 吸收性面板至少位于裆下区域中并且在纵向方向上延伸到前后腰部区域。 在后腰部区域中，与皮肤接触的皮肤接触片附着到内片的内表面。 皮肤接触片具有在横向方向上延伸的前端和后端以及在纵向方向上延伸的侧向部分，并且只有侧部结合到内片。