公开(公告)号：US20030021732A1

公开(公告)日：2003-01-30

申请号：US09911493

申请日：2001-07-25

Applicant: MOTOROLA, INC.

Inventor： Aroon V. Tungare ,  George T. Valliath

IPC: G01N021/63

CPC classification number: C30B25/18 ,  C30B23/02 ,  C30B29/40 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. The foregoing is used in an apparatus and method for analyzing target materials.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 实现顺应性衬底的形成的一种方式包括首先在硅晶片上生长容纳缓冲层。 容纳缓冲层是通过氧化硅的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。 上述用于分析目标材料的装置和方法。

公开(公告)号：US20030021571A1

公开(公告)日：2003-01-30

申请号：US09911487

申请日：2001-07-25

Applicant: MOTOROLA, INC.

Inventor： Keryn Lian ,  Aroon V. Tungare ,  Barbara Foley Barenburg

IPC: G02B006/00 ,  G02B006/10

CPC classification number: G02B6/1221 ,  G02B6/12002 ,  G02B6/131 ,  G02B6/132 ,  G02B2006/12097 ,  G02B2006/121 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. Using such a compliant substrate, electro-optic structures and devices may be formed, and, in particular, cantilevered optic structures may be formed.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。 可以使用这种柔性衬底，形成电光结构和器件，并且特别地可以形成悬臂式光学结构。

公开(公告)号：US20030013219A1

公开(公告)日：2003-01-16

申请号：US09903743

申请日：2001-07-13

Applicant: MOTOROLA, INC.

Inventor： Aroon V. Tungare ,  George T. Valliath ,  Daniel R. Gamota

IPC: H01L021/00 ,  H01L027/15 ,  H01L031/062 ,  H01L033/00 ,  H01L031/12

CPC classification number: H01S5/0261 ,  H01L27/15 ,  H01S5/026 ,  H01S5/0265 ,  H01S5/06243 ,  H01S5/183

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. Electro-optic structures may be integrally provided with such semiconductor structures, which semiconductor structures may also include light-emitting devices and control circuitry.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 电光结构可以与这种半导体结构一体地设置，该半导体结构还可以包括发光器件和控制电路。