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32 条记录 (耗时 0.022 秒)

    Recording medium
    2.
    发明授权
    Recording medium 失效
    录音媒体

    公开(公告)号：US4357616A

    公开(公告)日：1982-11-02

    申请号：US131761

    申请日：1980-03-19

    申请人： Motoyasu Terao ,  Yoshio Taniguchi ,  Shinkichi Horigome ,  Kazuo Shigematsu ,  Masahiro Ojima ,  Yoshinori Miyamura ,  Seiji Yonezawa

    发明人： Motoyasu Terao ,  Yoshio Taniguchi ,  Shinkichi Horigome ,  Kazuo Shigematsu ,  Masahiro Ojima ,  Yoshinori Miyamura ,  Seiji Yonezawa

    IPC分类号： G11B7/241 ,  G11B7/243 ,  G11B7/253 ,  G11B7/2531 ,  G11B7/2533 ,  G11B7/257 ,  G01D15/34

    CPC分类号： G11B7/241 ,  G11B7/243 ,  G11B2007/25706 ,  G11B2007/25708 ,  G11B2007/2571 ,  G11B2007/25715 ,  G11B2007/25716 ,  G11B7/244 ,  G11B7/252 ,  G11B7/2531 ,  G11B7/2533 ,  Y10S430/146

    摘要： A recording medium having at least a first inorganic material layer which overlies a predetermined substrate and which exhibits a light absorptivity for projected light, and a recording layer which overlies the first inorganic material layer and whose principal component is an organic material. The first inorganic material layer contains at least one element selected from the group consisting of In, Bi, Te, Sb, Ge, Sn, Pb, Cr, Nb, Ni, Pd, Fe, Pt, Re, Ta, Th, Ti, Zr and Tl and the content of the element or elements is at least 65 atomic-%.Further, the first inorganic material layer may well be overlaid with a second inorganic material layer which exhibits a light transmissivity higher than that of this first inorganic material layer. Preferable as the material of the second inorganic material layer is an inorganic material which contains at least one element selected from the group consisting of In, Bi, Te, Sb, Pb, Ge and Sn and at least one element selected from the group consisting of S, Se and O.In proximity to at least one surface of the first inorganic material layer, at least one stabilizing layer may be disposed as well.

    摘要翻译： 具有至少第一无机材料层的记录介质，所述第一无机材料层覆盖在预定的基板上并且对于投射的光呈现出光吸收性，以及记录层，其覆盖在第一无机材料层上，其主要成分是有机材料。 第一无机材料层含有选自In，Bi，Te，Sb，Ge，Sn，Pb，Cr，Nb，Ni，Pd，Fe，Pt，Re，Ta，Th，Ti， Zr和Tl，元素或元素的含量至少为65原子％。 此外，第一无机材料层可以很好地覆盖有比第一无机材料层高的透光率的第二无机材料层。 优选第二无机材料层的材料是含有选自In，Bi，Te，Sb，Pb，Ge和Sn中的至少一种元素的无机材料，以及选自由以下组成的组中的至少一种元素： S，Se和O.在第一无机材料层的至少一个表面附近，也可以设置至少一个稳定层。

    Recording member
    3.
    发明授权
    Recording member 失效
    录音成员

    公开(公告)号：US4348461A

    公开(公告)日：1982-09-07

    申请号：US160661

    申请日：1980-06-18

    申请人： Motoyasu Terao ,  Yoshio Taniguchi ,  Shinkichi Horigome ,  Masahiro Ojima ,  Kazuo Shigematsu ,  Keizo Kato ,  Yoshinori Miyamura ,  Seiji Yonezawa

    发明人： Motoyasu Terao ,  Yoshio Taniguchi ,  Shinkichi Horigome ,  Masahiro Ojima ,  Kazuo Shigematsu ,  Keizo Kato ,  Yoshinori Miyamura ,  Seiji Yonezawa

    IPC分类号： B41M5/26 ,  G03C1/705 ,  G11B7/24 ,  G11B7/243 ,  B32B5/14

    CPC分类号： G11B7/243 ,  G03C1/705 ,  G11B2007/24314 ,  G11B2007/24316 ,  Y10S428/913 ,  Y10S430/146 ,  Y10S430/165 ,  Y10T428/31

    摘要： A recording member having a predetermined substrate, and a thin film which is formed on the substrate and which is formed with recesses or pits for recording information when irradiated with a working beam, characterized in that said thin film is formed of an inorganic material which contains at least arsenic, selenium and tellurium, and that a distribution of either of said Se and said Te decreases from a part near the surface of said thin film towards a central part thereof, while a distribution of said As increases from a part near the surface towards said central part, is disclosed. This recording member can afford a high signal-to-noise ratio and a long lifetime. It is preferable that the distribution of said Se decreases so as to be at least 50 atomic-% in terms of the content of said Se in a part being the closest to the surface of said thin film and to be at most 40 atomic-% in terms of the average content of said Se over the whole thin film, and that the distribution of said As increases so as to be at most 15 atomic-% in terms of the content of said As in the closest part and to be 5 to 35 atomic-% in terms of the average content of said As in said whole thin film. The Se-Te-As-based material may well be doped with at least one element selected from the group consisting of Ge, S, Tl, Sn, Pb, In and Ta, within a range of 2 to 15 atomic-%.

    摘要翻译： 具有预定基板的记录部件和形成在基板上并且在用工作光束照射时用于记录信息的凹坑或凹坑形成的薄膜，其特征在于，所述薄膜由无机材料形成，所述无机材料包含 至少砷，硒和碲，并且所述Se和所述Te中的任一个的分布从所述薄膜的表面附近的部分向其中心部分减少，而所述As的分布从表面附近的部分增加 朝向所述中心部分。 该记录部件可以提供高的信噪比和长的使用寿命。 优选所述Se的分布以与所述薄膜表面最接近的部分中的所述Se的含量为至少50原子％，并且为至多40原子％ 就所述Se在整个薄膜上的平均含量而言，所述As的分布以所述As在最接近的部分的含量为最多为15原子％，并且为5〜 在所述整个薄膜中，所述As的平均含量为35原子％。 可以在2至15原子％的范围内掺杂选自由Ge，S，Tl，Sn，Pb，In和Ta组成的组中的至少一种元素的Se-Te-As基材料。

    Information recording member
    6.
    发明授权
    Information recording member 失效
    信息记录成员

    公开(公告)号：US4637976A

    公开(公告)日：1987-01-20

    申请号：US642260

    申请日：1984-08-20

    申请人： Motoyasu Terao ,  Yasushi Miyauchi ,  Kazuo Shigematsu ,  Shinkichi Horigome

    发明人： Motoyasu Terao ,  Yasushi Miyauchi ,  Kazuo Shigematsu ,  Shinkichi Horigome

    IPC分类号： B41M5/26 ,  G11B7/0055 ,  G11B7/243 ,  G03C1/72 ,  G03C1/76

    CPC分类号： G11B7/257 ,  G11B7/00557 ,  G11B7/243 ,  G11B2007/24316 ,  G11B2007/2432 ,  G11B2007/25708 ,  G11B2007/2571 ,  G11B2007/25715 ,  G11B7/2572 ,  Y10S430/146 ,  Y10S430/165

    摘要： In a data recording member having a data recording film which is formed on a substrate either directly or via at least one of inorganic and organic protective layers and which causes the change of atomic arrangement upon being irradiated by recording beam, the improvement wherein said data recording film has an average composition in a direction of the film thickness expressed by the following formulas:M.sub.x Te.sub.y Se.sub.z O.sub..alpha.wherein x, y, z and .alpha. are values within the ranges of 2.ltoreq.x.ltoreq.40, 30.ltoreq.y.ltoreq.95, 3.ltoreq.z.ltoreq.45, 0.ltoreq..alpha..ltoreq.20, and M is at least one element selected from the group consisting of As, Sb, Bi, S, Si, Ge, Sn, Pb, Al, Ga, In, Tl, Zn, Cd, Au, Ag, Cu, Ni, Pd, Rh, Cr, Mo, W and Ta.

    摘要翻译： 在具有直接地或通过无机和有机保护层中的至少一个形成在基板上的数据记录膜的数据记录部件中，并且其在由记录光束照射时引起原子排列的改变，其中所述数据记录 膜具有由下式表示的膜厚度方向上的平均组成：MxTeySezOα其中x，y，z和α是2≤x≤40,30≤y< / = 95,3 / z = 45,0 /α= 20，M为选自As，Sb，Bi，S，Si，Ge，Sn中的至少一种元素 ，Pb，Al，Ga，In，Tl，Zn，Cd，Au，Ag，Cu，Ni，Pd，Rh，Cr，Mo，W和Ta。