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1.发明授权Variable resistance element, semiconductor device including variable resistance element, and methods for manufacturing variable resistance element and semiconductor device 有权可变电阻元件，包括可变电阻元件的半导体器件，以及用于制造可变电阻元件和半导体器件的方法公开(公告)号：US08796659B2
公开(公告)日：2014-08-05
申请号：US13635858
申请日：2011-03-16
IPC分类号： H01L29/04
CPC分类号： H01L51/0094 , C23C16/0272 , C23C16/401 , C23C16/50 , C23C16/515 , C23C16/52 , H01L27/2463 , H01L45/1233 , H01L45/14 , H01L45/1616 , H01L51/0591
摘要： A variable resistance element includes a first electrode, a second electrode and an ion conduction layer interposed between the first and second electrodes. The ion conduction layer contains an organic oxide containing at least oxygen and carbon. The carbon concentration distribution in the ion conduction layer is such that the carbon concentration in an area closer to the first electrode is greater than that in an area closer to the second electrode.
摘要翻译： 可变电阻元件包括插入在第一和第二电极之间的第一电极，第二电极和离子传导层。 离子传导层含有至少含有氧和碳的有机氧化物。 离子传导层中的碳浓度分布使得靠近第一电极的区域中的碳浓度大于靠近第二电极的区域中的碳浓度。
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公开(公告)号：US10256400B2
公开(公告)日：2019-04-09
申请号：US15173875
申请日：2016-06-06
摘要： A semiconductor device comprises a semiconductor substrate; a multilevel wiring layer structure on the semiconductor substrate; and a variable resistance element in the multilevel wiring layer structure, wherein the variable resistance element comprises a variable resistance element film whose resistance changes between a top electrode and a bottom electrode, wherein the multilevel wiring layer structure comprises at least a wiring electrically connected to the bottom electrode and a plug electrically connected to the top electrode, and wherein the wiring also serves as the bottom electrode.
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3.发明授权Resistance changing element capable of operating at low voltage, semiconductor device, and method for forming resistance change element 有权能够在低电压下工作的电阻变化元件，半导体器件以及用于形成电阻变化元件的方法公开(公告)号：US08946672B2
公开(公告)日：2015-02-03
申请号：US13508243
申请日：2010-11-08
CPC分类号： H01L45/1616 , H01C7/006 , H01C7/18 , H01C17/08 , H01L45/04 , H01L45/085 , H01L45/1233 , H01L45/1253 , H01L45/14 , H01L45/1675
摘要： A resistance changing element according to the present invention comprises a first electrode (101) and a second electrode (103); and an ion conducting layer (102) that is formed between the first electrode (101) and the second electrode (103) and that contains at least oxygen and carbon.
摘要翻译： 根据本发明的电阻改变元件包括第一电极（101）和第二电极（103）; 和形成在第一电极（101）和第二电极（103）之间并且至少含有氧和碳的离子传导层（102）。
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4.发明申请VARIABLE RESISTANCE ELEMENT, SEMICONDUCTOR DEVICE INCLUDING VARIABLE RESISTANCE ELEMENT, AND METHODS FOR MANUFACTURING VARIABLE RESISTANCE ELEMENT AND SEMICONDUCTOR DEVICE 有权可变电阻元件，包括可变电阻元件的半导体器件，以及制造可变电阻元件和半导体器件的方法公开(公告)号：US20130009123A1
公开(公告)日：2013-01-10
申请号：US13635858
申请日：2011-03-16
IPC分类号： H01L45/00
CPC分类号： H01L51/0094 , C23C16/0272 , C23C16/401 , C23C16/50 , C23C16/515 , C23C16/52 , H01L27/2463 , H01L45/1233 , H01L45/14 , H01L45/1616 , H01L51/0591
摘要： A variable resistance element includes a first electrode, a second electrode and an ion conduction layer interposed between the first and second electrodes. The ion conduction layer contains an organic oxide containing at least oxygen and carbon. The carbon concentration distribution in the ion conduction layer is such that the carbon concentration in an area closer to the first electrode is greater than that in an area closer to the second electrode.
摘要翻译： 可变电阻元件包括插入在第一和第二电极之间的第一电极，第二电极和离子传导层。 离子传导层含有至少含有氧和碳的有机氧化物。 离子传导层中的碳浓度分布使得靠近第一电极的区域中的碳浓度大于靠近第二电极的区域中的碳浓度。
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公开(公告)号：US20120097916A1
公开(公告)日：2012-04-26
申请号：US13380728
申请日：2010-06-21
CPC分类号： H01L27/101 , H01L27/2436 , H01L27/2454 , H01L27/2481 , H01L45/085 , H01L45/12 , H01L45/1233 , H01L45/145 , H01L45/1616 , H01L45/1625 , H01L45/1675
摘要： The objective of the present invention is to provide a semiconductor device provided with a resistance-variable element having sufficient switching property and exhibiting high reliability and high densification as well as good insulating property.The present invention provides a semiconductor device comprising a resistance-variable element provided within multiple wiring layers on a semiconductor substrate, wherein the resistance-variable element comprises a laminated structure in which a first electrode, a first ion-conductive layer of valve-metal oxide film, a second ion-conductive layer containing oxygen and a second electrode are laminated in this order, and the wiring of the multiple wiring layers also serves as the first electrode.
摘要翻译： 本发明的目的是提供一种半导体器件，其具有具有足够的开关性能并且具有高可靠性和高致密度以及良好的绝缘性能的电阻可变元件。 本发明提供一种半导体器件，其包括设置在半导体衬底上的多个布线层内的电阻可变元件，其中所述电阻可变元件包括层压结构，其中第一电极，阀 - 金属氧化物的第一离子传导层 膜，含有氧的第二离子传导层和第二电极按顺序层叠，并且多个配线层的布线也用作第一电极。
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公开(公告)号：US09406877B2
公开(公告)日：2016-08-02
申请号：US13139602
申请日：2010-01-08
CPC分类号： H01L45/08 , H01L27/101 , H01L27/228 , H01L27/2436 , H01L45/04 , H01L45/085 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/16 , H01L45/1625 , H01L45/1675
摘要： A semiconductor device comprises a semiconductor substrate; a multilevel wiring layer structure on the semiconductor substrate; and a variable resistance element in the multilevel wiring layer structure, wherein the variable resistance element comprises a variable resistance element film whose resistance changes between a top electrode and a bottom electrode, wherein the multilevel wiring layer structure comprises at least a wiring electrically connected to the bottom electrode and a plug electrically connected to the top electrode, and wherein the wiring also serves as the bottom electrode.
摘要翻译： 半导体器件包括半导体衬底; 半导体衬底上的多层布线层结构; 以及所述多层布线层结构中的可变电阻元件，其中所述可变电阻元件包括电阻在顶部电极和底部电极之间变化的可变电阻元件膜，其中所述多层布线层结构至少包括与 底部电极和电连接到顶部电极的插头，并且其中布线也用作底部电极。
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公开(公告)号：US09059028B2
公开(公告)日：2015-06-16
申请号：US13380728
申请日：2010-06-21
CPC分类号： H01L27/101 , H01L27/2436 , H01L27/2454 , H01L27/2481 , H01L45/085 , H01L45/12 , H01L45/1233 , H01L45/145 , H01L45/1616 , H01L45/1625 , H01L45/1675
摘要： The objective of the present invention is to provide a semiconductor device provided with a resistance-variable element having sufficient switching property and exhibiting high reliability and high densification as well as good insulating property.The present invention provides a semiconductor device comprising a resistance-variable element provided within multiple wiring layers on a semiconductor substrate, wherein the resistance-variable element comprises a laminated structure in which a first electrode, a first ion-conductive layer of valve-metal oxide film, a second ion-conductive layer containing oxygen and a second electrode are laminated in this order, and the wiring of the multiple wiring layers also serves as the first electrode.
摘要翻译： 本发明的目的是提供一种半导体器件，其具有具有足够的开关性能并且具有高可靠性和高致密度以及良好的绝缘性能的电阻可变元件。 本发明提供一种半导体器件，其包括设置在半导体衬底上的多个布线层内的电阻可变元件，其中所述电阻可变元件包括层压结构，其中第一电极，阀 - 金属氧化物的第一离子传导层 膜，含有氧的第二离子传导层和第二电极按顺序层叠，并且多个配线层的布线也用作第一电极。
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公开(公告)号：US20120091426A1
公开(公告)日：2012-04-19
申请号：US13380092
申请日：2010-06-21
IPC分类号： H01L45/00
CPC分类号： H01L45/1233 , G11C13/0011 , G11C2213/15 , G11C2213/32 , G11C2213/56 , H01L45/085 , H01L45/146 , H01L45/1616 , H01L45/1625
摘要： A resistance-variable element as disclosed has high reliability, high densification, and good insulating properties. The device provides a resistance-variable element in which a first electrode including a metal primarily containing copper, an oxide film of valve-metal, an ion-conductive layer containing oxygen and a second electrode are laminated in this order.
摘要翻译： 所公开的电阻可变元件具有高可靠性，高密度化和良好的绝缘性能。 该装置提供一种电阻可变元件，其中包括主要包含铜的金属，阀金属的氧化物膜，含氧的离子传导层和第二电极的第一电极按此顺序层压。
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公开(公告)号：US09059402B2
公开(公告)日：2015-06-16
申请号：US13380092
申请日：2010-06-21
CPC分类号： H01L45/1233 , G11C13/0011 , G11C2213/15 , G11C2213/32 , G11C2213/56 , H01L45/085 , H01L45/146 , H01L45/1616 , H01L45/1625
摘要： A resistance-variable element as disclosed has high reliability, high densification, and good insulating properties. The device provides a resistance-variable element in which a first electrode including a metal primarily containing copper, an oxide film of valve-metal, an ion-conductive layer containing oxygen and a second electrode are laminated in this order.
摘要翻译： 所公开的电阻可变元件具有高可靠性，高密度化和良好的绝缘性能。 该装置提供一种电阻可变元件，其中包括主要包含铜的金属，阀金属的氧化物膜，含氧的离子传导层和第二电极的第一电极按此顺序层压。
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10.发明申请RESISTANCE CHANGING ELEMENT, SEMICONDUCTOR DEVICE, AND METHOD FOR FORMING RESISTANCE CHANGE ELEMENT 有权电阻变化元件，半导体器件和形成电阻变化元件的方法公开(公告)号：US20120280200A1
公开(公告)日：2012-11-08
申请号：US13508243
申请日：2010-11-08
CPC分类号： H01L45/1616 , H01C7/006 , H01C7/18 , H01C17/08 , H01L45/04 , H01L45/085 , H01L45/1233 , H01L45/1253 , H01L45/14 , H01L45/1675
摘要： A resistance changing element according to the present invention comprises a first electrode (101) and a second electrode (103); and an ion conducting layer (102) that is formed between the first electrode (101) and the second electrode (103) and that contains at least oxygen and carbon.
摘要翻译： 根据本发明的电阻改变元件包括第一电极（101）和第二电极（103）; 和形成在第一电极（101）和第二电极（103）之间并且至少含有氧和碳的离子传导层（102）。
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