公开(公告)号：US5571321A

公开(公告)日：1996-11-05

申请号：US327783

申请日：1994-10-20

申请人： Munehisa Yanagisawa ,  Yuuki Tamura ,  Susumu Arisaka ,  Hidetoshi Matsumoto

发明人： Munehisa Yanagisawa ,  Yuuki Tamura ,  Susumu Arisaka ,  Hidetoshi Matsumoto

IPC分类号： H01L21/208 ,  H01L21/304 ,  H01L33/08 ,  H01L33/12 ,  H01L33/22 ,  H01L33/30 ,  H01L21/20

CPC分类号： H01L33/30 ,  H01L33/0062

摘要： This disclosure herein pertains to a method for producing a GaP epitaxial wafer used for fabrication of light emitting diodes having higher brightness than light emitting diodes fabricated from a GaP epitaxial wafer produced by a conventional method have. The method comprises the steps of: preparing a GaP layered substrate 15 with one or more GaP layers on a GaP single crystal substrate 10 in the first series of liquid phase epitaxial growth; obtaining a layered GaP substrate 15a by eliminating surface irregularities of said GaP layered substrate 15 by mechano-chemical polishing to make the surface to be planar; and then forming a GaP light emitting layer composite 19 on said layered GaP substrate 15a in the second series of liquid phase epitaxial growth.

摘要翻译： 本公开内容涉及用于制造具有比通过常规方法制造的GaP外延晶片制造的发光二极管的亮度高的发光二极管的GaP外延晶片的制造方法。 该方法包括以下步骤：在第一系列液相外延生长中，在GaP单晶衬底10上制备具有一个或多个GaP层的GaP层状衬底15; 通过机械化学抛光消除所述GaP层叠基板15的表面凹凸，使表面成为平面，得到层状GaP基板15a; 然后在第二系列液相外延生长中在所述层状GaP基板15a上形成GaP发光层复合体19。

公开(公告)号：US5407858A

公开(公告)日：1995-04-18

申请号：US229690

申请日：1994-04-12

申请人： Munehisa Yanagisawa ,  Yuuki Tamura ,  Susumu Arisaka ,  Hidetoshi Matsumoto

发明人： Munehisa Yanagisawa ,  Yuuki Tamura ,  Susumu Arisaka ,  Hidetoshi Matsumoto

IPC分类号： H01L21/368 ,  C30B19/00 ,  H01L21/208 ,  H01L33/30

CPC分类号： H01L33/30 ,  C30B19/00 ,  C30B29/44 ,  H01L21/02392 ,  H01L21/02461 ,  H01L21/02543 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/02625 ,  H01L21/02628 ,  H01L33/0062 ,  H01L33/305

摘要： To provide a GaP red light emitting element substrate which a large amount of oxygen is doped in the p-type GaP layer, and which very few Ga.sub.2 O.sub.3 precipitates develop on and/or in p-type GaP layer, and methods of manufacturing said substrate. After the n-type GaP layer 2 is grown on the n-type GaP single crystal substrate 1, when forming the p-type GaP layer 3 doped with Zn and O, on said n-type GaP layer 2 by means of the liquid phase epitaxial growth method, the p-type GaP layer 3 is grown by using a Ga solution with a high concentration of oxygen, and said Ga solution is removed from the substrate 1 to complete the growth when the temperature is lowered to a prescribed temperature of 980.degree. C. or higher. When the temperature has reached the prescribed temperature of 980.degree. C. or higher during the growth using the Ga solution with a high concentration of oxygen, it is also possible to treat said Ga solution to decrease the concentration of the contained oxygen and then continue the growth. It is also possible to conduct the growth using the Ga solution with a high concentration of oxygen until the temperature reaches the prescribed temperature of 980.degree. C. or higher, and then, after switching the growth solution to a Ga solution with a low concentration of oxygen, continue the growth.

摘要翻译： 为了提供在p型GaP层中掺杂了大量氧的GaP红色发光元件衬底，并且在p型GaP层上和/或p型GaP层中形成非常少的Ga 2 O 3析出物，以及制造所述衬底的方法。 在n型GaP层2生长在n型GaP单晶衬底1上之后，当在所述n型GaP层2上通过液相形成掺杂有Zn和O的p型GaP层3时 通过外延生长法，通过使用高浓度的氧的Ga溶液生长p型GaP层3，并且当温度降低至规定温度为980°时，从衬底1去除所述Ga溶液以完成生长 ℃以上。 当使用高浓度氧气的Ga溶液在温度达到980℃以上的规定温度时，还可以处理所述Ga溶液以降低所含氧气的浓度，然后继续 成长。 也可以使用具有高浓度氧的Ga溶液进行生长，直到温度达到规定温度为980℃以上，然后，将生长溶液切换成低浓度的Ga溶液 氧气，继续增长。

公开(公告)号：US5349208A

公开(公告)日：1994-09-20

申请号：US147480

申请日：1993-11-05

申请人： Munehisa Yanagisawa ,  Susumu Higuchi ,  Yuuki Tamura

发明人： Munehisa Yanagisawa ,  Susumu Higuchi ,  Yuuki Tamura

IPC分类号： H01L33/12 ,  H01L33/30 ,  H01L33/56 ,  H01L33/62 ,  H01L33/00

CPC分类号： H01L33/305 ,  H01L24/32 ,  H01L2924/12036 ,  H01L2924/12041

摘要： To obtain a GaP light emitting element substrate which provides GaP light emitting diodes with less luminance dispersion and high brightness. A GaP light emitting element substrate comprising an n-type GaP buffer layer, an n-type GaP layer and a p-type GaP layer layered one after another on an n-type GaP single crystal substrate, wherein the oxygen concentration in said n-type GaP buffer layer is kept at 6.times.10.sup.15 [atoms/cc] or less.

摘要翻译： 为获得GaP发光元件基板，其提供具有较低亮度色散和高亮度的GaP发光二极管。 一种GaP发光元件基板，包括在n型GaP单晶衬底上依次层叠的n型GaP缓冲层，n型GaP层和p型GaP层，其中， 型GaP缓冲层保持在6×10 15 [原子/ cc]以下。

公开(公告)号：US5851850A

公开(公告)日：1998-12-22

申请号：US516096

申请日：1995-08-17

申请人： Munehisa Yanagisawa ,  Susumu Higuchi ,  Yuuki Tamura ,  Akio Nakamura ,  Toshio Otaki

发明人： Munehisa Yanagisawa ,  Susumu Higuchi ,  Yuuki Tamura ,  Akio Nakamura ,  Toshio Otaki

IPC分类号： H01L33/00 ,  H01L33/02 ,  H01L21/00

CPC分类号： H01L33/025 ,  H01L33/0062

摘要： A semiconductor substrate for GaP type light emitting devices which includes an n-type single crystal substrate, an n-type GaP layer, and a p-type GaP layer formed on the n-type GaP single crystal substrate. The carbon concentration in the n-type GaP single crystal substrate is more than 1.0.times.10.sup.16 atoms/cc but less than 1.0.times.10.sup.17 atoms/cc. The n-type GaP single crystal substrate is obtained from an n-type GaP single crystal grown by the Liquid Encapsulation Czochralski method wherein B.sub.2 O.sub.3 containing water corresponding to 200 ppm or more is used as an encapsulation liquid.

摘要翻译： 一种用于GaP型发光器件的半导体衬底，其包括在n型GaP单晶衬底上形成的n型单晶衬底，n型GaP层和p型GaP层。 n型GaP单晶衬底中的碳浓度大于1.0×1016原子/ cc但小于1.0×10 17原子/ cc。 n型GaP单晶基板是通过使用液态封装法，其使用含有对应于200ppm以上的水的B 2 O 3作为封装液体的液体封装法，由n型GaP单晶获得。

公开(公告)号：US5643827A

公开(公告)日：1997-07-01

申请号：US358977

申请日：1994-12-19

申请人： Toshio Ootaki ,  Akio Nakamura ,  Yuuki Tamura ,  Munehisa Yanagisawa ,  Susumu Higuchi

发明人： Toshio Ootaki ,  Akio Nakamura ,  Yuuki Tamura ,  Munehisa Yanagisawa ,  Susumu Higuchi

IPC分类号： H01L33/02 ,  H01L33/12 ,  H01L33/30 ,  H01L21/20

CPC分类号： H01L33/305 ,  H01L33/025 ,  Y10S438/955

摘要： A GaP light emitting element substrate comprising an n-type GaP layer, a nitrogen-doped n-type GaP layer and a p-type GaP layer layered one after another on a multi-layer GaP substrate built by forming an n-type GaP buffer layer(s) on an n-type GaP single crystal substrate, wherein the sulfur (S) concentration in said n-type GaP buffer layer is made to be 5.times.10.sup.16 [atoms/cc] or less. The method of manufacturing it is as follows: an n-type GaP buffer layer(s) is formed on an n-type GaP single crystal substrate to prepare a multi-layer GaP substrate, then an n-type GaP layer, a nitrogen doped n-type GaP layer and a p-type GaP layer are layered on said multi-layer GaP substrate by means of the melt-back method to obtain a GaP light emitting element substrate, wherein the sulfur (S) concentration in said n-type GaP buffer layer is made to be 5.times.10.sup.16 [atoms/cc] or less when the multi-layer GaP substrate is prepared.

摘要翻译： 一种GaP发光元件基板，其包括在通过形成n型GaP缓冲器构成的多层GaP基板上依次层叠的n型GaP层，氮掺杂n型GaP层和p型GaP层 其中n型GaP缓冲层中的硫（S）浓度为5×10 16 [原子/ cc]以下。 其制造方法如下：在n型GaP单晶衬底上形成n型GaP缓冲层，以制备多层GaP衬底，然后将n型GaP层，氮掺杂 n型GaP层和p型GaP层通过熔融回归法层叠在所述多层GaP衬底上，以获得GaP发光元件衬底，其中所述n型GaP层中的硫（S）浓度 当制备多层GaP衬底时，GaP缓冲层为5×10 16 [原子/ cc]以下。

公开(公告)号：US07171104B2

公开(公告)日：2007-01-30

申请号：US10677835

申请日：2003-10-03

申请人： Yuuki Tamura ,  Eiji Nakanishi

发明人： Yuuki Tamura ,  Eiji Nakanishi

IPC分类号： G02B6/10

CPC分类号： G02B6/0016 ,  Y10S385/901

摘要： An optical waveguide plate for a surface light emitting apparatus and a surface light emitting apparatus using the optical waveguide plate that provides excellent uniformity in surface emission is disclosed. The optical waveguide plate comprises an end face introducing light emitted from a light source, and a light emitting surface outputting light introduced from the end face. The end face has a light introducing portion comprising a plurality of notched prisms which disperse incident light. The intervals between two adjacent prisms are set to become greater in proportion to the distance from the center of the light introducing portion. The angles of the prisms are also adjusted to provide uniform surface emission.

公开(公告)号：US08369746B2

公开(公告)日：2013-02-05

申请号：US12972800

申请日：2010-12-20

申请人： Yuuki Tamura

发明人： Yuuki Tamura

IPC分类号： G03G15/00 ,  F16D11/04

CPC分类号： F16D27/118 ,  F16D28/00 ,  F16D2023/123 ,  G03G21/1647 ,  G03G2221/163

摘要： Clutch mechanism includes support plate, input element to which driving force is input, output element configured to rotate upon receiving driving force, first elastic member configured to bias output element toward support plate, first member including sliding arm inserted through through-hole of support plate and first slide surface, and second member configured to accommodate first member and including second slide surface. Insertion of the sliding arm into through-hole prevents rotation of first member with respect to support plate but allows first member to approach and move away from support plate. Output element moves apart from input element to cut off driving force when second member is in first rotational position. When second member rotates to second rotational position, output element outputs driving force transmitted from input element.

摘要翻译： 离合器机构包括支撑板，输入驱动力的输入元件，被配置为在接收驱动力时旋转的输出元件，构造成将输出元件朝向支撑板偏置的第一弹性构件，第一构件，其包括插入穿过支撑板的通孔的滑动臂 和第一滑动表面，以及构造成容纳第一构件并包括第二滑动表面的第二构件。 将滑动臂插入通孔防止第一构件相对于支撑板旋转，但允许第一构件接近并远离支撑板移动。 当第二构件处于第一旋转位置时，输出元件离开输入元件移动以切断驱动力。 当第二构件旋转到第二旋转位置时，输出元件输出从输入元件传递的驱动力。

公开(公告)号：US20110158695A1

公开(公告)日：2011-06-30

申请号：US12972800

申请日：2010-12-20

申请人： Yuuki Tamura

发明人： Yuuki Tamura

IPC分类号： G03G15/01 ,  F16D11/14

CPC分类号： F16D27/118 ,  F16D28/00 ,  F16D2023/123 ,  G03G21/1647 ,  G03G2221/163

摘要： Clutch mechanism includes support plate, input element to which driving force is input, output element configured to rotate upon receiving driving force, first elastic member configured to bias output element toward support plate, first member including sliding arm inserted through through-hole of support plate and first slide surface, and second member configured to accommodate first member and including second slide surface. Insertion of the sliding arm into through-hole prevents rotation of first member with respect to support plate but allows first member to approach and move away from support plate. Output element moves apart from input element to cut off driving force when second member is in first rotational position. When second member rotates to second rotational position, output element outputs driving force transmitted from input element.

摘要翻译： 离合器机构包括支撑板，输入驱动力的输入元件，被配置为在接收驱动力时旋转的输出元件，构造成将输出元件朝向支撑板偏置的第一弹性构件，第一构件，其包括插入穿过支撑板的通孔的滑动臂 和第一滑动表面，以及构造成容纳第一构件并包括第二滑动表面的第二构件。 将滑动臂插入通孔防止第一构件相对于支撑板旋转，但允许第一构件接近并远离支撑板移动。 当第二构件处于第一旋转位置时，输出元件离开输入元件移动以切断驱动力。 当第二构件旋转到第二旋转位置时，输出元件输出从输入元件传递的驱动力。

公开(公告)号：US20070121342A1

公开(公告)日：2007-05-31

申请号：US11657104

申请日：2007-01-24

申请人： Yuuki Tamura ,  Eiji Nakanishi

发明人： Yuuki Tamura ,  Eiji Nakanishi

IPC分类号： F21V7/04

CPC分类号： G02B6/0016 ,  Y10S385/901

摘要： An optical waveguide plate for a surface light emitting apparatus and a surface light emitting apparatus using the optical waveguide plate that provides excellent uniformity in surface emission is disclosed. The optical waveguide plate comprises an end face introducing light emitted from a light source, and a light emitting surface outputting light introduced from the end face. The end face has a light introducing portion comprising a plurality of notched prisms which disperse incident light. The intervals between two adjacent prisms are set to become greater in proportion to the distance from the center of the light introducing portion. The angles of the prisms are also adjusted to provide uniform surface emission.

公开(公告)号：US08733197B2

公开(公告)日：2014-05-27

申请号：US13074116

申请日：2011-03-29

申请人： Yuuki Tamura

发明人： Yuuki Tamura

IPC分类号： F16H27/02

CPC分类号： G03G15/757 ,  F16H1/20 ,  G03G2221/1657

摘要： A driving force transmission mechanism (40) includes: a first support portion (31) for supporting an end portion of a rotation shaft (1aa) of a photosensitive drum (1a) on a second driving force transmission gear (49) side; a second support portion (33) arranged opposite to the photosensitive drum (1a) across the first support portion (31); a shaft (51) provided so as to protrude from the second support portion (33) to the photosensitive drum (1a) side; and a multi-step gear (47) rotatably supported by the shaft (51), the multi-step gear including a driving force input gear portion (47a) and a driving force output gear portion (47b). Between the driving force input gear portion (47a) and the driving force output gear portion (47b), there is formed a peripheral surface portion (47c) rotatably supported by a bearing member (53) provided into a second through-hole (31a) of the first support portion (31).

摘要翻译： 驱动力传递机构（40）包括：用于将感光鼓（1a）的旋转轴（1aa）的端部支撑在第二驱动力传动齿轮（49）侧上的第一支撑部分（31） 第二支撑部分（33），其跨过所述第一支撑部分（31）与所述感光鼓（1a）相对布置; 设置成从所述第二支撑部分（33）突出到所述感光鼓（1a）侧的轴（51）; 以及由所述轴（51）可旋转地支撑的多级齿轮（47），所述多级齿轮包括驱动力输入齿轮部分（47a）和驱动力输出齿轮部分（47b）。 在驱动力输入齿轮部分（47a）和驱动力输出齿轮部分（47b）之间形成有由设置在第二通孔（31a）中的轴承部件（53）可旋转地支撑的周面部分（47c） 的第一支撑部分（31）。