公开(公告)号：US4385086A

公开(公告)日：1983-05-24

申请号：US100930

申请日：1979-12-06

申请人： Muneo Nakayama ,  Hisashi Nakane ,  Akira Yokota ,  Shingo Asaumi

发明人： Muneo Nakayama ,  Hisashi Nakane ,  Akira Yokota ,  Shingo Asaumi

IPC分类号： C09D4/00 ,  C09D5/00 ,  B05D3/02

CPC分类号： C09D5/00 ,  C03C17/004 ,  C03C17/23 ,  C09D4/00 ,  C23C18/1216 ,  C23C18/1241 ,  C23C18/1245 ,  C23C18/1283 ,  C03C2217/213 ,  C03C2217/78 ,  C03C2218/11

摘要： An efficient method is proposed for preventing leaching of contaminants from the surface of a solid, such as sodium ions from the surface of soda glass or nickel, chromium or iron from the surface of stainless steel in order to minimize detrimental contamination of highly pure substances in contact with the solid surface.The effect is basically obtained by providing a coating film of oxidized silicon on to the solid surface and the coating film is formed by applying a coating solution containing a hydroxysilane compound to the surface followed by baking of the coating layer at a temperature not lower than 150.degree. C., the coating solution being prepared by the equilibration reaction of an alkoxysilane with a carboxylic acid and an alcohol, of an acyloxysilane with an alcohol, or of an alkoxysilane with water in an alcohol where the molar ratios of the individual reactants are in the specified ranges.

摘要翻译： 提出了一种有效的方法，用于防止污染物从不锈钢表面的钠玻璃或镍，铬或铁表面的固体表面浸出，以最大限度地减少高纯度物质的有害污染 与固体表面接触。 通过在固体表面上设置氧化硅的涂膜，基本上得到效果，通过在表面涂布含有羟基硅烷化合物的涂布溶液，然后在不低于150℃的温度下进行涂布，形成涂膜 ℃，通过烷基硅烷与羧酸和醇与丙烯氧基硅烷与醇或烷氧基硅烷与醇在醇中的平衡反应制备的涂料溶液，其中各个反应物的摩尔比为 指定范围。

公开(公告)号：US4174222A

公开(公告)日：1979-11-13

申请号：US881260

申请日：1978-02-27

申请人： Takashi Komine ,  Akira Yokota ,  Hisashi Nakane ,  Shingo Asaumi ,  Noboru Okazaki

发明人： Takashi Komine ,  Akira Yokota ,  Hisashi Nakane ,  Shingo Asaumi ,  Noboru Okazaki

IPC分类号： G03F7/022 ,  G03C1/54

CPC分类号： G03F7/022

摘要： A gallic acid alkyl ester or a gallic acid aryl ester is reacted in an inert solvent with 3 equivalents of naphthoquinone-(1,2)-diazido-(2)-sulfonyl chloride in the presence of an alkali to effect sulfonylation of 3 hydroxyl groups in the gallic acid moiety whereby a photodecomposable naphthoquinone-(1,2)-diazido-(2)-sulfonic acid ester is obtained. The new naphthoquinonediazido derivative thus obtained is mixed with an alkali-soluble phenol resin such as m-cresol novolac resin or phenol novolac resin to prepare a positive-type photoresist composition having high sensitivity and high resolving power as well as excellent dimensional accuracy and etching-resistance. In addition, this composition forms a good photosensitive film and can be a good ink receptor.

摘要翻译： 没食子酸烷基酯或没食子酸芳基酯在惰性溶剂中与3当量萘醌 - （1,2） - 叠氮基 - （2） - 磺酰氯在碱存在下反应，以实现3个羟基的磺酰化 在没食子酸部分中得到可光分解的萘醌 - （1,2） - 二叠氮基 - （2） - 磺酸酯。 将由此获得的新的萘醌二叠氮基衍生物与间甲酚酚醛清漆树脂或苯酚酚醛清漆树脂等碱溶性酚树脂混合，制备具有高灵敏度和高分辨能力的正型光致抗蚀剂组合物，以及优异的尺寸精度和蚀刻 - 抵抗性。 此外，该组合物形成良好的感光膜，并且可以是良好的油墨受体。

公开(公告)号：US4833067A

公开(公告)日：1989-05-23

申请号：US246930

申请日：1988-09-19

申请人： Hatsuyuki Tanaka ,  Hidekatsu Kohara ,  Yoshiyuki Sato ,  Shingo Asaumi ,  Toshimasa Nakayama ,  Akira Yokota ,  Hisashi Nakane

发明人： Hatsuyuki Tanaka ,  Hidekatsu Kohara ,  Yoshiyuki Sato ,  Shingo Asaumi ,  Toshimasa Nakayama ,  Akira Yokota ,  Hisashi Nakane

IPC分类号： G03C1/72 ,  G03C5/18 ,  G03F7/30 ,  G03F7/32 ,  H01L21/027 ,  H01L21/30

CPC分类号： G03F7/322 ,  G03C5/18

摘要： The aqueous developing solution of the invention for positive-working photoresist compositions contains, in addition to an organic basic compound free from metallic ions, such as tetramethyl ammonium hydroxide and choline, as the principal ingredient, from 50 to 5000 ppm of an acetylene alcohol. In comparison with conventional developing solutions, the inventive developing solution is advantageous in the uniformity of the patterned photoresist layer, higher sensitivity and smaller temperature dependency of development and less drawbacks due to foaming of the solution.

摘要翻译： 本发明的正性光致抗蚀剂组合物的水性显影液除了含有金属离子的有机碱性化合物外，还含有氢氧化四甲基铵和胆碱作为主要成分，为50-5000ppm的乙炔醇。 与传统的显影液相比，本发明的显影溶液在图案化光刻胶层的均匀性方面是有利的，更高的灵敏度和更小的显影温度依赖性以及由于溶液的发泡而引起的缺点。

公开(公告)号：US4844832A

公开(公告)日：1989-07-04

申请号：US149971

申请日：1988-02-03

申请人： Masakazu Kobayashi ,  Shingo Asaumi ,  Akira Yokota ,  Hisashi Nakane

发明人： Masakazu Kobayashi ,  Shingo Asaumi ,  Akira Yokota ,  Hisashi Nakane

IPC分类号： G03C11/00 ,  C09D9/00 ,  G03F7/42 ,  H01L21/027 ,  H01L21/30

CPC分类号： G03F7/426 ,  C09D9/005

摘要： The remover solution for photoresist layers comprises: (a) from 30 to 70% by weight of an aromatic hydrocarbon compound or a combination of aromatic hydrocarbon compounds having a flash point of 70.degree. C. or higher containing at least a half amount of a naphthalenic compound selected from the group consisting of naphthalene, methyl naphthalenes and dimethyl naphthalenes; (b) from 5 to 40% by weight of a phenolic compound; and (c) from 10 to 50% by weight of an arylsulfonic acid. The remover solution is effective for a variety of photoresist compositions with less problems in respect to the workers' health and danger of fire and explosion than conventional remover solutions.

摘要翻译： 光致抗蚀剂层的去除剂溶液包括：（a）30至70重量％的芳族烃化合物或闪点为70℃或更高的含至少一半的萘的芳族烃化合物的组合 选自萘，甲基萘和二甲基萘的化合物; （b）5〜40重量％的酚类化合物; 和（c）10至50重量％的芳基磺酸。 去除剂溶液对于各种光刻胶组合物是有效的，与常规去除剂溶液相比，相对于工人的健康和火灾和爆炸危险的问题较少。

公开(公告)号：US5281508A

公开(公告)日：1994-01-25

申请号：US935131

申请日：1992-08-21

申请人： Hidekatsu Kohara ,  Hatsuyuki Tanaka ,  Masanori Miyabe ,  Yoshiaki Arai ,  Shingo Asaumi ,  Toshimasa Nakayama ,  Akira Yokota ,  Hisashi Nakane

发明人： Hidekatsu Kohara ,  Hatsuyuki Tanaka ,  Masanori Miyabe ,  Yoshiaki Arai ,  Shingo Asaumi ,  Toshimasa Nakayama ,  Akira Yokota ,  Hisashi Nakane

IPC分类号： C08G8/08 ,  C08K5/42 ,  G03F7/032 ,  G03F7/023

CPC分类号： G03F7/032 ,  C08G8/08 ,  C08K5/42

摘要： A positive-working photoresist composition suitable for fine patterning in the manufacture of semiconductor devices, e.g., VLSIs, with high fidelity is proposed. The composition comprises 100 parts by weight of a cresol novolac resin and 25-60 parts by weight of a naphthoquinone diazide sulfonic acid ester as the photosensitive component while the cresol novolac resin component is prepared from a mixture of cresol isomers composed of 35-43% of m-cresol and 65-57% of p-cresol with substantial absence of o-cresol or composed of 35-43% of m-cresol, 65-57% of p-cresol and 1% or less of o-cresol.

摘要翻译： 提出了适用于制造高保真度的半导体器件（例如VLSI）中的精细图案化的正性光致抗蚀剂组合物。 该组合物包含100重量份的甲酚酚醛清漆树脂和25-60重量份的萘醌二叠氮化物磺酸酯作为感光组分，而甲酚酚醛清漆树脂组分由由35-43％ 的间甲酚和65-57％的对甲酚，基本上没有邻甲酚或由35-43％的间甲酚，65-57％的对甲酚和1％或更少的邻甲酚组成。

公开(公告)号：US4784937A

公开(公告)日：1988-11-15

申请号：US892646

申请日：1986-08-04

申请人： Hatsuyuki Tanaka ,  Hidekatsu Kohara ,  Yoshiyuki Sato ,  Shingo Asaumi ,  Toshimasa Nakayama ,  Akira Yokota ,  Hisashi Nakane

发明人： Hatsuyuki Tanaka ,  Hidekatsu Kohara ,  Yoshiyuki Sato ,  Shingo Asaumi ,  Toshimasa Nakayama ,  Akira Yokota ,  Hisashi Nakane

IPC分类号： G03F7/32

CPC分类号： G03F7/322

摘要： The aqueous developing solution of the invention for positive-working photoresist compositions contains, in addition to an organic basic compound free from metal ions, such as tetramethyl ammonium hydroxide and choline, as the principal ingredient, from 50 to 5000 ppm of an anionic or non-ionic fluorine-containing surface active agent of specific types. In comparison with conventional developing solutions without such a surface active agent, the inventive developing solution is advantageous in the uniformity of the patterned photoresist layer and higher sensitivity and smaller temperature dependency of development.

摘要翻译： 本发明的正性光致抗蚀剂组合物的含水显影液除了含有金属离子的有机碱性化合物外，还含有氢氧化四甲基铵和胆碱作为主要成分，含有50-5000ppm阴离子或非离子表面活性剂 非离子型含氟表面活性剂。 与没有这种表面活性剂的常规显影溶液相比，本发明的显影溶液在图案化光致抗蚀剂层的均匀性方面是有利的，并且具有较高的灵敏度和较小的显影温度依赖性。

公开(公告)号：US4738915A

公开(公告)日：1988-04-19

申请号：US32952

申请日：1987-03-31

申请人： Takashi Komine ,  Shingo Asaumi ,  Akira Yokota ,  Hisashi Nakane

发明人： Takashi Komine ,  Shingo Asaumi ,  Akira Yokota ,  Hisashi Nakane

IPC分类号： G03C1/72 ,  G03F7/022 ,  H01L21/027 ,  G03C1/60

CPC分类号： G03F7/022

摘要： The invention provides an improvement over the conventional positive-working photoresist compositions comprising a novolac resin and an ester compound between 2,3,4-trihydroxybenzophenone and naphthoquinone-1,2-diazido-5-sulfonic acid in respect of scum formation in development and resistance of the patterned photoresist layer against heat and dry etching. The inventive composition comprises, in addition to the novolac resin and the ester compounds, 2,3,4-trihydroxybenzophenone in a specified amount relative to the ester compounds as a part of the photosensitive component which may be a reaction product obtained by the esterification reaction for the synthesis of the ester compounds containing unesterified 2,3,4-trihydroxybenzophenone.

摘要翻译： 本发明相对于在开发中的浮渣形成方面，相对于包含酚醛清漆树脂和2,3,4-三羟基二苯甲酮与萘醌-1,2-二叠氮基-5-磺酸之间的酯化合物的常规正性光致抗蚀剂组合物的改进， 图案化的光致抗蚀剂层对热和干蚀刻的电阻。 除酚醛清漆树脂和酯化合物之外，本发明组合物还包含相对于作为感光组分的一部分的酯化合物的特定量的2,3,4-三羟基二苯甲酮，其可以是通过酯化反应获得的反应产物 用于合成含有未酯化的2,3,4-三羟基二苯甲酮的酯化合物。

公开(公告)号：US4694040A

公开(公告)日：1987-09-15

申请号：US902029

申请日：1986-08-25

申请人： Akira Hashimoto ,  Toshihiro Nishimura ,  Muneo Nakayama ,  Hisashi Nakane ,  Shozo Toda

发明人： Akira Hashimoto ,  Toshihiro Nishimura ,  Muneo Nakayama ,  Hisashi Nakane ,  Shozo Toda

IPC分类号： C08G77/00 ,  C08G77/06 ,  C09D183/04 ,  C09D183/14 ,  C08K5/05

CPC分类号： C09D183/14

摘要： The invention provides a novel means for providing a highly heat-resistant and corrosion-resistant coating film on the surface of a substrate such as a semiconductor silicon wafer or glass plate by coating the surface with a liquid coating composition which is a solution of an oligomeric organopolysiloxane as a partial dehydration-condensation product of a monohydrocarbylsilane triol RSi(OH).sub.3, optionally, with admixture of a dihydrocarbylsilane diol R.sub.2 Si(OH).sub.2, R being a monovalent hydrocarbon group, e.g. methyl or phenyl, in an organic solvent followed by baking of the coated substrate to convert the coating layer into a cured resin film.

摘要翻译： 本发明提供了一种用于通过用液体涂料组合物涂覆表面而在诸如半导体硅晶片或玻璃板的基材的表面上提供高耐热和耐腐蚀的涂膜的新颖方法，该液体涂料组合物是低聚物 作为单烃基硅烷三醇RSi（OH）3的部分脱水缩合产物的有机聚硅氧烷，任选地与二烃基硅烷二醇R2Si（OH）2的混合物，R是一价烃基，例如 甲基或苯基，然后烘烤涂布的基材，将涂层转化为固化的树脂膜。

公开(公告)号：USD291413S

公开(公告)日：1987-08-18

申请号：US689661

申请日：1985-01-08

申请人： Akira Uehara ,  Isamu Hijikata ,  Hisashi Nakane ,  Muneo Nakayama

设计人： Akira Uehara ,  Isamu Hijikata ,  Hisashi Nakane ,  Muneo Nakayama

公开(公告)号：US4550239A

公开(公告)日：1985-10-29

申请号：US424503

申请日：1982-09-27

申请人： Akira Uehara ,  Isamu Hijikata ,  Hisashi Nakane ,  Muneo Nakayama

发明人： Akira Uehara ,  Isamu Hijikata ,  Hisashi Nakane ,  Muneo Nakayama

IPC分类号： B65G49/07 ,  H01L21/677 ,  B23K9/00

CPC分类号： H01L21/67778 ,  H01L21/67781 ,  Y10S156/912 ,  Y10S414/137 ,  Y10S414/14

摘要： An automatic plasma processing device having a substantially vertically disposed plasma chamber in which a plurality of semiconductor wafers can be simultaneously processed with plasma. The automatic plasma processing device comprises a container cassette adapted to contain a plurality of wafers therein, a feeding mechanism for taking out the wafers one by one from the cassette and for feeding the same, a holding frame for receiving the wafers one by one from the feeding mechanism and for holding the same therein, a driving mechanism for moving the holding frame up and down into and out of the plasma chamber, a plasma generating mechanism for generating plasma in the plasma chamber, and a control system for controlling the aforesaid mechanisms. The device is simplified in construction and can automatically and successively process a large number of wafers, while at the same time having a compact construction.

摘要翻译： 一种具有基本上垂直设置的等离子体室的自动等离子体处理装置，其中多个半导体晶片可以与等离子体同时处理。 自动等离子体处理装置包括适于在其中容纳多个晶片的容器盒，用于从盒中一个接一个地取出晶片并用于馈送的馈送机构，用于从该盒子一个接一个地接收晶片的保持框架 进给机构并保持在其中的驱动机构，用于使保持框架上下移入等离子体室的驱动机构，用于在等离子体室中产生等离子体的等离子体产生机构，以及用于控制上述机构的控制系统。 该装置的结构简化，并且可以自动并连续地处理大量的晶片，同时具有紧凑的结构。