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    Color development method of metallic titanium and black and colored titanium manufactured by this method
    1.
    发明授权
    Color development method of metallic titanium and black and colored titanium manufactured by this method 失效
    通过该方法制造的金属钛和黑色和有色钛的显色方法

    公开(公告)号：US6093259A

    公开(公告)日：2000-07-25

    申请号：US952513

    申请日：1997-11-28

    申请人： Munetoshi Watanabe ,  Tsuyoshi Sakaguchi

    发明人： Munetoshi Watanabe ,  Tsuyoshi Sakaguchi

    IPC分类号： C23C8/02 ,  C23C8/10 ,  C23C8/34 ,  C23C22/64 ,  C23C22/70 ,  C23C8/24

    CPC分类号： C23C22/70 ,  C23C22/64 ,  C23C8/02 ,  C23C8/10 ,  C23C8/34

    摘要： This invention provides color development methods of metallic titanium used for manufacture of black titanium or titanium tinted in other chromatic colors. In one method, metallic titanium is treated with an alkali solution. It enables colored titanium rich in color variation with high efficiency, irrespective of the material configuration. The brightness of black is further reduced by conducting a nitriding process, after this process. In another method, the metallic titanium is oxidized after forming the titanium nitride film on its surface by nitriding it. Black titanium is produced with low brightness. In this way, colored titanium with various tones is produced. Moreover, the close adherence of the film with colors developed thereon is enhanced.

    摘要翻译： PCT No.PCT / JP97 / 00798 Sec。 371日期1997年11月28日 102（e）1997年11月28日PCT PCT 1997年3月13日PCT公布。 第WO97 / 36019号公报 日期1997年10月2日本发明提供了用于制造以其他有色颜色着色的黑色钛或钛的金属钛的显色方法。 在一种方法中，用碱溶液处理金属钛。 无论材料配置如何，它都能使色彩丰富的色彩丰富，效率高。 在此过程之后，通过渗氮处理进一步降低黑色的亮度。 在另一种方法中，通过氮化氮化钛在其表面上形成氮化钛膜之后，金属钛被氧化。 黑色钛以低亮度生产。 以这种方式产生具有各种色调的着色钛。 此外，增强了具有在其上显影的颜色的胶片的紧密粘附。

    Sintered object of silicon monoxide and method for producing the same
    8.
    发明申请
    Sintered object of silicon monoxide and method for producing the same 失效
    一氧化硅的烧结体及其制造方法

    公开(公告)号：US20050085095A1

    公开(公告)日：2005-04-21

    申请号：US10501996

    申请日：2002-11-29

    申请人： Yoshitake Natsume ,  Tadashi Ogasawara ,  Munetoshi Watanabe ,  Kazuomi Azuma ,  Toshiharu Iwase

    发明人： Yoshitake Natsume ,  Tadashi Ogasawara ,  Munetoshi Watanabe ,  Kazuomi Azuma ,  Toshiharu Iwase

    IPC分类号： C04B35/14 ,  C04B35/645 ,  C23C14/24 ,  C23C14/34 ,  H01L21/31 ,  H01L21/469

    CPC分类号： C04B35/645 ,  C04B35/14 ,  C04B2235/3418 ,  C04B2235/5427 ,  C04B2235/604 ,  C04B2235/658 ,  C04B2235/6581 ,  C04B2235/79

    摘要： A sintered object of silicon monoxide for use as a material for forming silicon oxide thin films is provided of which the evaporation residue as determined by subjecting a sample thereof to thermogravimetry at a heating temperature of 1,300° C. and in a vacuum atmosphere, namely at a pressure of not higher than 10 Pa, is not more than 4% by mass relative to the sample before measurement. This sintered object can be produced by sintering SiO particles having a particle diameter of not smaller than 250 μm, either after press forming thereof or during press forming thereof, in a non-oxygen atmosphere. This sintered object is high in evaporation rate and, when it is used as a material for film formation, an improvement in productivity in producing silicon oxide thin films can be expected. Thus, it can be widely applied in forming silicon oxide thin films useful as electric insulating films, mechanical protection films, optical films, barrier films of food packaging materials, etc.

    摘要翻译： 提供用作形成氧化硅薄膜的材料的一氧化硅的烧结体，其中通过将样品在1,300℃的加热温度和真空气氛中，即在 10Pa以下的压力相对于测定前的样品不超过4质量％。 该烧结体可以通过在非氧气氛中烧结粒径不小于250μm的SiO粒子，或者在其压制成型之后或在其压制成形期间来制造。 该烧结体的蒸发速度高，并且当其用作成膜材料时，可以预期提高生产氧化硅薄膜的生产率。 因此，可以广泛地应用于形成用作电绝缘膜，机械保护膜，光学膜，食品包装材料的阻隔膜等的氧化硅薄膜等。

    Sintered object of silicon monoxide and method for producing the same
    10.
    发明授权
    Sintered object of silicon monoxide and method for producing the same 失效
    一氧化硅的烧结体及其制造方法

    公开(公告)号：US07151068B2

    公开(公告)日：2006-12-19

    申请号：US10501996

    申请日：2002-11-29

    申请人： Yoshitake Natsume ,  Tadashi Ogasawara ,  Munetoshi Watanabe ,  Kazuomi Azuma ,  Toshiharu Iwase

    发明人： Yoshitake Natsume ,  Tadashi Ogasawara ,  Munetoshi Watanabe ,  Kazuomi Azuma ,  Toshiharu Iwase

    IPC分类号： C04B35/01

    CPC分类号： C04B35/645 ,  C04B35/14 ,  C04B2235/3418 ,  C04B2235/5427 ,  C04B2235/604 ,  C04B2235/658 ,  C04B2235/6581 ,  C04B2235/79

    摘要： A sintered object of silicon monoxide for use as a material for forming silicon oxide thin films is provided of which the evaporation residue as determined by subjecting a sample thereof to thermogravimetry at a heating temperature of 1,300° C. and in a vacuum atmosphere, namely at a pressure of not higher than 10 Pa, is not more than 4% by mass relative to the sample before measurement. This sintered object can be produced by sintering SiO particles having a particle diameter of not smaller than 250 μm, either after press forming thereof or during press forming thereof, in a non-oxygen atmosphere. This sintered object is high in evaporation rate and, when it is used as a material for film formation, an improvement in productivity in producing silicon oxide thin films can be expected. Thus, it can be widely applied in forming silicon oxide thin films useful as electric insulating films, mechanical protection films, optical films, barrier films of food packaging materials, etc.

    摘要翻译： 提供用作形成氧化硅薄膜的材料的一氧化硅的烧结体，其中通过将样品在1,300℃的加热温度和真空气氛中，即在 10Pa以下的压力相对于测定前的样品不超过4质量％。 该烧结体可以通过在非氧气氛中烧结粒径不小于250μm的SiO粒子，或者在其压制成型之后或在其压制成形期间来制造。 该烧结体的蒸发速度高，并且当其用作成膜材料时，可以预期提高生产氧化硅薄膜的生产率。 因此，可以广泛地应用于形成用作电绝缘膜，机械保护膜，光学膜，食品包装材料的阻隔膜等的氧化硅薄膜等。