公开(公告)号：US09825156B2

公开(公告)日：2017-11-21

申请号：US14932497

申请日：2015-11-04

Applicant: MURATA MANUFACTURING CO., LTD.

Inventor： Kenji Sasaki ,  Kingo Kurotani ,  Takashi Kitahara

IPC: H01L29/737 ,  H03F3/19 ,  H01L23/535 ,  H01L27/082 ,  H01L29/40 ,  H01L23/482 ,  H01L23/00

CPC classification number: H01L29/7371 ,  H01L23/4824 ,  H01L23/535 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L27/0823 ,  H01L29/0692 ,  H01L29/40 ,  H01L29/41708 ,  H01L2224/0401 ,  H01L2224/13013 ,  H01L2224/1302 ,  H01L2224/16227 ,  H01L2924/13051 ,  H03F3/19 ,  H03F2200/408 ,  H03F2200/451 ,  H01L2924/00012

Abstract: A compound semiconductor device includes a heterojunction bipolar transistor and a bump. The heterojunction bipolar transistor includes a plurality of unit transistors. The bump is electrically connected to emitters of the plurality of unit transistors. The plurality of unit transistors are arranged in a first direction. The bump is disposed above the emitters of the plurality of unit transistors while extending in the first direction. The emitter of at least one of the plurality of unit transistors is displaced from a center line of the bump in the first direction toward a first side of a second direction which is perpendicular to the first direction. The emitter of at least another one of the plurality of unit transistors is displaced from the center line of the bump in the first direction toward a second side of the second direction.

公开(公告)号：US11869957B2

公开(公告)日：2024-01-09

申请号：US17398909

申请日：2021-08-10

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Kenji Sasaki ,  Kingo Kurotani ,  Takashi Kitahara ,  Shigeki Koya

IPC: H01L29/737 ,  H01L23/00 ,  H01L23/482 ,  H01L29/417 ,  H01L29/06 ,  H01L23/535 ,  H01L27/082 ,  H01L29/40 ,  H03F3/19

CPC classification number: H01L29/7371 ,  H01L23/4824 ,  H01L23/535 ,  H01L24/13 ,  H01L27/0823 ,  H01L29/0692 ,  H01L29/40 ,  H01L29/41708 ,  H03F3/19 ,  H01L24/05 ,  H01L24/16 ,  H01L2224/0401 ,  H01L2224/1302 ,  H01L2224/13013 ,  H01L2224/16227 ,  H01L2924/13051 ,  H03F2200/408 ,  H03F2200/451

Abstract: A compound semiconductor device comprises a heterojunction bipolar transistor including a plurality of unit transistors, a capacitor electrically connected between a RF input wire and a base wire for each unit transistor of the unit transistors, and a bump electrically connected to emitters of the unit transistors. The unit transistors are arranged in a first direction. The bump is disposed above the emitters of the unit transistors while extending in the first direction. The transistors include first and second unit transistors, the respective emitters of the first and second unit transistors being disposed on first and second sides, respectively, of a second direction, perpendicular to the first direction, with respect to a center line of the bump extending in the first direction. The capacitor is not covered by the bump, and respective lengths of the respective base wires connected respectively to the first and second unit transistors are different.

公开(公告)号：US10404226B2

公开(公告)日：2019-09-03

申请号：US15654219

申请日：2017-07-19

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Takashi Kitahara ,  Hiroaki Nakayama ,  Tsunekazu Saimei ,  Hiroki Noto ,  Koichiro Kawasaki

IPC: H01L23/12 ,  H03F3/21 ,  H01L25/04 ,  H01L25/18 ,  H01L23/31 ,  H01L23/367 ,  H01L23/498

Abstract: A power amplifier module includes a substrate, a power amplifier having a first surface on which an electrode is defined and a second surface opposite the first surface, the first surface faces a principal surface of the substrate, a surface acoustic wave duplexer having a first surface on which an electrode is defined and a second surface opposite the first surface, the first surface faces the principal surface of the substrate, a heat dissipation unit defined on another principal surface of the substrate, a heat dissipation path that connects a connecting portion between the power amplifier and the principal surface to the heat dissipation unit, an insulating resin that covers the power amplifier and the surface acoustic wave duplexer, a conductive shield that covers the insulating resin, and a first conductive unit defined on the second surface of the surface acoustic wave duplexer and electrically connected to the conductive shield.

公开(公告)号：US10276701B2

公开(公告)日：2019-04-30

申请号：US15709017

申请日：2017-09-19

Applicant: MURATA MANUFACTURING CO., LTD.

Inventor： Kenji Sasaki ,  Kingo Kurotani ,  Takashi Kitahara

IPC: H01L29/737 ,  H03F3/19 ,  H01L23/535 ,  H01L27/082 ,  H01L29/40 ,  H01L23/00 ,  H01L23/482 ,  H01L29/417 ,  H01L29/06

Abstract: A compound semiconductor device includes a heterojunction bipolar transistor and a bump. The heterojunction bipolar transistor includes a plurality of unit transistors. The bump is electrically connected to emitters of the plurality of unit transistors. The plurality of unit transistors are arranged in a first direction. The bump is disposed above the emitters of the plurality of unit transistors while extending in the first direction. The emitter of at least one of the plurality of unit transistors is displaced from a center line of the bump in the first direction toward a first side of a second direction which is perpendicular to the first direction. The emitter of at least another one of the plurality of unit transistors is displaced from the center line of the bump in the first direction toward a second side of the second direction.

公开(公告)号：US11508834B2

公开(公告)日：2022-11-22

申请号：US17097937

申请日：2020-11-13

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Kenji Sasaki ,  Kingo Kurotani ,  Takashi Kitahara ,  Shigeki Koya

IPC: H01L29/73 ,  H01L29/737 ,  H01L23/00 ,  H01L23/482 ,  H01L29/417 ,  H01L29/06 ,  H01L23/535 ,  H01L27/082 ,  H01L29/40 ,  H03F3/19

Abstract: A compound semiconductor device comprises a heterojunction bipolar transistor including a plurality of unit transistors, a capacitor electrically connected between a RF input wire and a base wire for each unit transistor of the unit transistors, and a bump electrically connected to emitters of the unit transistors. The unit transistors are arranged in a first direction. The bump is disposed above the emitters of the unit transistors while extending in the first direction. The transistors include first and second unit transistors, the respective emitters of the first and second unit transistors being disposed on first and second sides, respectively, of a second direction, perpendicular to the first direction, with respect to a center line of the bump extending in the first direction. The capacitor is not covered by the bump, and respective lengths of the respective base wires connected respectively to the first and second unit transistors are different.

公开(公告)号：US10714602B2

公开(公告)日：2020-07-14

申请号：US16355172

申请日：2019-03-15

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Kenji Sasaki ,  Kingo Kurotani ,  Takashi Kitahara

IPC: H01L29/737 ,  H03F3/19 ,  H01L23/00 ,  H01L23/482 ,  H01L29/417 ,  H01L29/06 ,  H01L23/535 ,  H01L27/082 ,  H01L29/40

Abstract: A compound semiconductor device includes a heterojunction bipolar transistor and a bump. The heterojunction bipolar transistor includes a plurality of unit transistors. The bump is electrically connected to emitters of the plurality of unit transistors. The plurality of unit transistors are arranged in a first direction. The bump is disposed above the emitters of the plurality of unit transistors while extending in the first direction. The emitter of at least one of the plurality of unit transistors is displaced from a center line of the bump in the first direction toward a first side of a second direction which is perpendicular to the first direction. The emitter of at least another one of the plurality of unit transistors is displaced from the center line of the bump in the first direction toward a second side of the second direction.

公开(公告)号：US09831329B2

公开(公告)日：2017-11-28

申请号：US15229730

申请日：2016-08-05

Applicant: MURATA MANUFACTURING CO., LTD.

Inventor： Kenji Sasaki ,  Kingo Kurotani ,  Takashi Kitahara

IPC: H01L29/737 ,  H03F3/19 ,  H01L23/535 ,  H01L27/082 ,  H01L29/40 ,  H01L23/482 ,  H01L29/417 ,  H01L29/06 ,  H01L23/00

CPC classification number: H01L29/7371 ,  H01L23/4824 ,  H01L23/535 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L27/0823 ,  H01L29/0692 ,  H01L29/40 ,  H01L29/41708 ,  H01L2224/0401 ,  H01L2224/13013 ,  H01L2224/1302 ,  H01L2224/16227 ,  H01L2924/13051 ,  H03F3/19 ,  H03F2200/408 ,  H03F2200/451 ,  H01L2924/00012

Abstract: A compound semiconductor device includes a heterojunction bipolar transistor and a bump. The heterojunction bipolar transistor includes a plurality of unit transistors. The bump is electrically connected to emitters of the plurality of unit transistors. The plurality of unit transistors are arranged in a first direction. The bump is disposed above the emitters of the plurality of unit transistors while extending in the first direction. The emitter of at least one of the plurality of unit transistors is displaced from a center line of the bump in the first direction toward a first side of a second direction which is perpendicular to the first direction. The emitter of at least another one of the plurality of unit transistors is displaced from the center line of the bump in the first direction toward a second side of the second direction.

公开(公告)号：US20170317002A1

公开(公告)日：2017-11-02

申请号：US15654219

申请日：2017-07-19

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Takashi Kitahara ,  Hiroaki Nakayama ,  Tsunekazu Saimei ,  Hiroki Noto ,  Koichiro Kawasaki

IPC: H01L23/36 ,  H01L25/04 ,  H01L23/12

CPC classification number: H03F3/21 ,  H01L23/12 ,  H01L23/3121 ,  H01L23/3677 ,  H01L23/49827 ,  H01L25/04 ,  H01L25/18 ,  H01L2224/14 ,  H01L2224/16225 ,  H01L2224/73253 ,  H01L2924/15313 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00012

Abstract: A power amplifier module includes a substrate, a power amplifier having a first surface on which an electrode is defined and a second surface opposite the first surface, the first surface faces a principal surface of the substrate, a surface acoustic wave duplexer having a first surface on which an electrode is defined and a second surface opposite the first surface, the first surface faces the principal surface of the substrate, a heat dissipation unit defined on another principal surface of the substrate, a heat dissipation path that connects a connecting portion between the power amplifier and the principal surface to the heat dissipation unit, an insulating resin that covers the power amplifier and the surface acoustic wave duplexer, a conductive shield that covers the insulating resin, and a first conductive unit defined on the second surface of the surface acoustic wave duplexer and electrically connected to the conductive shield.

公开(公告)号：US10264677B2

公开(公告)日：2019-04-16

申请号：US15610658

申请日：2017-06-01

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Koichiro Kawasaki ,  Taku Kikuchi ,  Takashi Kitahara ,  Hiroki Noto

IPC: H05K1/00 ,  H05K1/18 ,  H01L23/00 ,  H01L23/28 ,  H01L23/34 ,  H03H3/08 ,  H04B1/38 ,  H01L41/047 ,  H03H9/02 ,  H05K1/02 ,  H05K3/28 ,  H05K3/30 ,  H03H9/05 ,  H03H9/10

Abstract: An electronic component includes an electronic component element including first and second main surfaces, a heat-dissipation accelerating member on the first main surface, a sealing resin layer sealing the electronic component element, and a shielding member provided on the sealing resin layer and electrically connected to the heat-dissipation accelerating member. The heat-dissipation accelerating member includes fourth and fifth main surfaces. The electronic component includes a connecting member disposed on the fifth main surface of the heat-dissipation accelerating member and electrically connecting at least one portion of the heat-dissipation accelerating member and the shielding member. The connecting member has a higher thermal conductivity than the sealing resin layer. The contact area between the heat-dissipation accelerating member and the connecting member is smaller than the area of the fifth main surface.