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    Diesel engine piston
    1.
    发明授权
    Diesel engine piston 有权
    柴油发动机活塞

    公开(公告)号：US09121336B2

    公开(公告)日：2015-09-01

    申请号：US13289917

    申请日：2011-11-04

    申请人： Myungjun Lee ,  Dae Choi ,  Hyunsung Jung ,  Minyoung Ki ,  Hyeungwoo Lee

    发明人： Myungjun Lee ,  Dae Choi ,  Hyunsung Jung ,  Minyoung Ki ,  Hyeungwoo Lee

    IPC分类号： F02B23/06 ,  F02F3/22

    CPC分类号： F02B23/0651 ,  F02B23/0669 ,  F02B23/0672 ,  F02F3/22 ,  Y02T10/125

    摘要： A diesel engine piston having a combustion chamber may include a profile surface that protrudes toward a center axis of the combustion chamber from an inner wall thereof and includes a protrusion on the inner wall, the protrusion extending from the inner wall with a predetermined length, wherein the protrusion divides a spray fuel, which may be sprayed and atomized onto the protrusion, into a fuel flow at an upper portion of the combustion chamber and a fuel flow at a lower portion of the combustion chamber, respectively.

    摘要翻译： 具有燃烧室的柴油发动机活塞可以包括从其内壁朝向燃烧室的中心轴线突出的轮廓表面，并且在内壁上包括突起，该突起从内壁以预定长度延伸，其中 突起将喷雾和雾化到突起上的喷射燃料分别分成燃烧室上部的燃料流和燃烧室下部的燃料流。

    DIESEL ENGINE PISTON
    2.
    发明申请
    DIESEL ENGINE PISTON 有权
    柴油发动机活塞

    公开(公告)号：US20130019838A1

    公开(公告)日：2013-01-24

    申请号：US13289917

    申请日：2011-11-04

    申请人： Myungjun Lee ,  Dae Choi ,  Hyunsung Jung ,  Minyoung Ki ,  Hyeungwoo Lee

    发明人： Myungjun Lee ,  Dae Choi ,  Hyunsung Jung ,  Minyoung Ki ,  Hyeungwoo Lee

    IPC分类号： F02B3/06

    CPC分类号： F02B23/0651 ,  F02B23/0669 ,  F02B23/0672 ,  F02F3/22 ,  Y02T10/125

    摘要： A diesel engine piston having a combustion chamber may include a profile surface that protrudes toward a center axis of the combustion chamber from an inner wall thereof and includes a protrusion on the inner wall, the protrusion extending from the inner wall with a predetermined length, wherein the protrusion divides a spray fuel, which may be sprayed and atomized onto the protrusion, into a fuel flow at an upper portion of the combustion chamber and a fuel flow at a lower portion of the combustion chamber, respectively.

    摘要翻译： 具有燃烧室的柴油发动机活塞可以包括从其内壁朝向燃烧室的中心轴线突出的轮廓表面，并且在内壁上包括突起，该突起从内壁以预定长度延伸，其中 突起将喷雾和雾化到突起上的喷射燃料分别分成燃烧室上部的燃料流和燃烧室下部的燃料流。

    MULTI-SAC INJECTOR
    4.
    发明申请
    MULTI-SAC INJECTOR 审中-公开
    多针注射器

    公开(公告)号：US20130112780A1

    公开(公告)日：2013-05-09

    申请号：US13584614

    申请日：2012-08-13

    申请人： Hyunsung Jung ,  Dae Choi ,  Hyeungwoo Lee

    发明人： Hyunsung Jung ,  Dae Choi ,  Hyeungwoo Lee

    IPC分类号： F02M63/00

    CPC分类号： F02M45/12 ,  F02M2200/46

    摘要： A multi-sac injection includes a main sac located at the center of a nozzle such that an injected fuel formed a low load cone angle to inject a fuel for pre-mixed combustion, and sub-sacs located at sides of the nozzle such that the injected fuel forms a middle/high load cone angle large relative to a low load cone angle to inject a fuel for diffusive combustion. Accordingly, smoke and NOx are significantly reduced in a low load region while maintaining features of a middle/high load region with a single injector.

    摘要翻译： 多囊注射包括位于喷嘴中心的主囊，使得喷射的燃料形成低负载锥角以喷射用于预混合燃烧的燃料，以及位于喷嘴侧面的子囊，使得 喷射的燃料形成相对于低负载锥角大的中/高负载锥角，以喷射用于扩散燃烧的燃料。 因此，在低负载区域中烟和NOx显着降低，同时通过单个注射器保持中/高负载区域的特征。

    MAGNETIC MEMORY DEVICES HAVING MEMORY CELLS AND REFERENCE CELLS WITH DIFFERENT CONFIGURATIONS
    5.
    发明申请
    MAGNETIC MEMORY DEVICES HAVING MEMORY CELLS AND REFERENCE CELLS WITH DIFFERENT CONFIGURATIONS 审中-公开

    公开(公告)号：US20180068702A1

    公开(公告)日：2018-03-08

    申请号：US15603907

    申请日：2017-05-24

    申请人： Hyunsung Jung ,  DAEEUN JEONG

    发明人： Hyunsung Jung ,  DAEEUN JEONG

    IPC分类号： G11C11/16 ,  H01L43/02 ,  H01L43/08

    CPC分类号： G11C11/1673 ,  G11C11/161 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

    摘要： A semiconductor memory device includes a memory cell including a memory magnetic tunnel junction (MTJ) configured to be coupled to a first sensing node and a reference cell including a first resistance element and a second resistance element configured to be coupled in parallel to a second sensing node, the first resistance element including a first number of reference MTJs and the second resistance element including a second number of reference MTJs different from the first number of reference MTJs. The memory device further includes a sensing circuit configured to be coupled to the first and second sensing nodes and to detect a difference in resistance between the memory cell and the reference cell. In some embodiments, the first number of reference MTJs includes first reference MTJs connected in series and the second number of reference MTJs includes second reference MTJs connected in series.

    Magnetic memory devices having memory cells and reference cells with different configurations
    6.
    发明授权
    Magnetic memory devices having memory cells and reference cells with different configurations 有权

    公开(公告)号：US10163478B2

    公开(公告)日：2018-12-25

    申请号：US15603907

    申请日：2017-05-24

    申请人： Hyunsung Jung ,  Daeeun Jeong

    发明人： Hyunsung Jung ,  Daeeun Jeong

    IPC分类号： G11C11/16 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

    摘要： A semiconductor memory device includes a memory cell including a memory magnetic tunnel junction (MTJ) configured to be coupled to a first sensing node and a reference cell including a first resistance element and a second resistance element configured to be coupled in parallel to a second sensing node, the first resistance element including a first number of reference MTJs and the second resistance element including a second number of reference MTJs different from the first number of reference MTJs. The memory device further includes a sensing circuit configured to be coupled to the first and second sensing nodes and to detect a difference in resistance between the memory cell and the reference cell. In some embodiments, the first number of reference MTJs includes first reference MTJs connected in series and the second number of reference MTJs includes second reference MTJs connected in series.

    Logic circuits including magnetic tunnel junction devices
    7.
    发明授权
    Logic circuits including magnetic tunnel junction devices 有权

    公开(公告)号：US10170172B2

    公开(公告)日：2019-01-01

    申请号：US15491289

    申请日：2017-04-19

    申请人： Kyung Min Lee ,  Hyunsung Jung

    发明人： Kyung Min Lee ,  Hyunsung Jung

    IPC分类号： G11C11/00 ,  G11C11/16 ,  H01L27/22 ,  H01L29/78 ,  H01L43/02 ,  H01L43/08 ,  H03K19/18

    摘要： A logic circuit may include at least one magnetic tunnel junction device including a first layer configured to receive a particular input signal and a second layer connected to a node, and an inverter connected to the node and configured to generate an output signal by inverting a signal of the node, wherein the inverter includes a transistor on a substrate, and the at least one magnetic tunnel junction device is on an upper portion of the transistor. The at least one magnetic tunnel junction device may include first and second magnetic tunnel junction devices configured to receive first and second input signals, respectively. The logic circuit may include a magnetic tunnel junction device and a reference resistor configured to receive a second input signal, the reference resistor connected to the node, the reference resistor having a reference resistance. The logic circuit may be included in an apparatus.