公开(公告)号：US3566218A

公开(公告)日：1971-02-23

申请号：US3566218D

申请日：1968-10-02

申请人： NAT SEMICONDUCTOR CORP THE

发明人： WIDLAR ROBERT J ,  TALBERT DAVID V

IPC分类号： H03F1/22 ,  H01L21/8222 ,  H01L27/082 ,  H03F3/34 ,  H03F3/347 ,  H03F3/45 ,  H01L19/00

CPC分类号： H01L21/8222 ,  H01L27/0825 ,  Y10S148/037 ,  Y10S148/038 ,  Y10S148/085 ,  Y10S148/087 ,  Y10S148/099 ,  Y10S148/151 ,  Y10S148/167

摘要： A novel high-performance monolithic integrated circuit means including semiconductive transistor elements having different base widths so that one or more of the transistors have a high voltage breakdown characteristic, while one or more of the remaining transistors have a high current gain characteristic. This is accomplished by diffusing certain regions of selected ones of the respective transistors for longer periods of time than like regions of the other transistors so as to render the base widths of certain ones of the transistors of lesser thickness than those of the remaining transistors.

公开(公告)号：US3579059A

公开(公告)日：1971-05-18

申请号：US3579059D

申请日：1968-03-11

申请人： NAT SEMICONDUCTOR CORP

发明人： WIDLAR ROBERT J

IPC分类号： H01L29/06 ,  H01L29/735 ,  H01L11/00

CPC分类号： H01L29/0692 ,  H01L29/735

摘要： A lateral transistor device constructed to have a single emitter region and a single base region operatively associated with a plurality of collector regions. Each of the various collector regions forms a separate PN junction with the base region which is dimensioned and disposed with respect to the base-emitter junction to provide a predetermined portion of the total available collector current.

公开(公告)号：US3702955A

公开(公告)日：1972-11-14

申请号：US3702955D

申请日：1969-07-11

申请人： NAT SEMICONDUCTOR CORP

发明人： KALB JEFFREY C ,  WIDLAR ROBERT J

IPC分类号： H01L21/8222 ,  H01L21/331 ,  H01L27/06 ,  H01L27/07 ,  H01L27/082 ,  H01L29/73 ,  H03K19/088 ,  H01L19/00

CPC分类号： H01L27/0821 ,  H01L27/075 ,  H03K19/088 ,  Y10S148/037 ,  Y10S148/085

摘要： A non-gold doped multiple emitter transistor device having an additional lateral PNP transistor formed in the collector region and a debiasing resistance formed in the base region, these elements cooperating to suppress the inherent PNP beta to substrate characteristic and control the inverse Hfe of the device. The emitter of the additional transistor is connected to the base of the MET through a pinch-type debiasing resistor formed in a projection of the base region of the MET, and the base and collector of the additional transistor are shorted together and connected to the collector of the MET so as to provide a shunt path around the base-collector junction thereof.

摘要翻译： 具有形成在集电极区域中的附加横向PNP晶体管的非金掺杂多发射体晶体管器件和在基极区域中形成的去偶电阻，这些元件协同作用以抑制固有的PNPβ至衬底特性并控制器件的反向Hfe 。 附加晶体管的发射极通过形成在MET的基极区域的突起中的夹紧型去噪电阻器连接到MET的基极，并且附加晶体管的基极和集电极被短路并连接到集电极 以提供围绕其基极 - 集电极结的分流路径。

公开(公告)号：US3571630A

公开(公告)日：1971-03-23

申请号：US3571630D

申请日：1968-11-04

申请人： NAT SEMICONDUCTOR CORP

发明人： WIDLAR ROBERT J

IPC分类号： G05F3/18 ,  H01L27/00 ,  H01L27/07 ,  H03K23/08 ,  H01L9/00

CPC分类号： H01L27/0716 ,  G05F3/185 ,  H01L27/00

摘要： A double diffused transistor structure having a base region which is sufficiently thin so that the reverse breakdown voltage between the emitter and the collector (BVeco) is less than the reverse breakdown voltage between the emitter and the base (BVebo). The transistor structure is connected in an upside-down fashion as a two-terminal network, the terminals being formed by the emitter and the collector in a manner similar to that heretofore employed with Zener diodes to provide a ''''reachthrough'''' at a predetermined voltage thereacross. A circuit utilizing such a ''''reach-through'''' transistor structure connected in the upside-down fashion in conjunction with other components to operate the transistor structure at a constant current to maintain the reverse breakdown voltage constant.

公开(公告)号：US3617859A

公开(公告)日：1971-11-02

申请号：US3617859D

申请日：1970-03-23

申请人： NAT SEMICONDUCTOR CORP

发明人： DOBKIN ROBERT C ,  WIDLAR ROBERT J

IPC分类号： G05F1/567 ,  G05F3/30 ,  G05F1/58

CPC分类号： G05F3/30 ,  G05F1/567 ,  Y10S323/907

摘要： An integrated circuit regulator including a temperature stable constant voltage reference wherein the negative temperature coefficient of the base-to-emitter voltage a first transistor in conjunction with the positive temperature coefficient of the base-to-emitter voltage differential between two additional transistors operating at different current densities is used to achieve a zero temperature coefficient reference potential. The constant voltage reference is combined with a voltage follower and provides a source of constant current which is passed through an external variable resistance to develop a selectable and predictable adjustment voltage for driving the voltage follower so as to cause an unregulated input voltage applied thereto to be regulated at an output terminal.