公开(公告)号：US10461222B2

公开(公告)日：2019-10-29

申请号：US15691551

申请日：2017-08-30

Applicant: NICHIA CORPORATION

Inventor： Makoto Abe ,  Keisuke Higashitani ,  Naoki Azuma ,  Akiyoshi Kinouchi

IPC: H01L33/00 ,  H01L33/22 ,  H01L33/16

Abstract: A light-emitting element includes: a sapphire substrate having a c-plane at a main surface thereof; and a semiconductor layer provided at the main surface side of the sapphire substrate. The sapphire substrate includes a first unit including a first region, a second region, and a third region, wherein, when viewed from the main surface side, the three regions together have a shape of a regular hexagon that is evenly divided into the three regions such that each region has a shape of a rhombus; and a plurality of second units disposed to be aligned with each side of the first unit, the second unit having mirror symmetry relative to the first unit. The first unit and the second units are arranged to make a space at the center of the unit.

公开(公告)号：US09773946B2

公开(公告)日：2017-09-26

申请号：US15044868

申请日：2016-02-16

Applicant: NICHIA CORPORATION

Inventor： Makoto Abe ,  Keisuke Higashitani ,  Naoki Azuma ,  Akiyoshi Kinouchi

IPC: H01L33/22 ,  H01L33/16

CPC classification number: H01L33/22 ,  H01L33/16

Abstract: A light-emitting element includes: a sapphire substrate having a c-plane at a main surface thereof; and a semiconductor layer provided at the main surface side of the sapphire substrate. The sapphire substrate includes a first unit including a first region, a second region, and a third region, wherein, when viewed from the main surface side, the three regions together have a shape of a regular hexagon that is evenly divided into the three regions such that each region has a shape of a rhombus; and a plurality of second units disposed to be aligned with each side of the first unit, the second unit having mirror symmetry relative to the first unit. The first unit and the second units are arranged to make a space at the center of the unit.

公开(公告)号：US09553238B2

公开(公告)日：2017-01-24

申请号：US14947716

申请日：2015-11-20

Applicant: Nichia Corporation

Inventor： Kazuki Kashimoto ,  Masafumi Itasaka ,  Hisashi Kasai ,  Naoki Azuma

IPC: H01L21/00 ,  H01L33/38 ,  H01L33/08

CPC classification number: H01L33/385 ,  H01L33/08 ,  H01L33/382 ,  H01L2933/0016

Abstract: A method of manufacturing a semiconductor light emitting element includes forming a semiconductor stacked layer body on a substrate, the semiconductor stacked layer body including a first semiconductor layer and a second semiconductor layer; removing a portion of the semiconductor stacked layer body and exposing the first semiconductor layer such that the second semiconductor layer includes an extending portion that extends in a plane direction; forming a conductor layer electrically connecting the first semiconductor layer and the extending portion of the second semiconductor layer; forming a first electrode electrically connected to the first semiconductor layer and a second electrode electrically connected to the second semiconductor layer; forming a protective film covering at least a portion of the first electrode and at least a portion of the second electrode; and after forming the protective film, removing a portion of the exposed portion of the extending portion.

Abstract translation: 半导体发光元件的制造方法包括在基板上形成半导体层叠体，所述半导体层叠体包含第一半导体层和第二半导体层， 去除所述半导体堆叠层体的一部分并暴露所述第一半导体层，使得所述第二半导体层包括在平面方向上延伸的延伸部分; 形成电连接所述第一半导体层和所述第二半导体层的延伸部分的导体层; 形成与第一半导体层电连接的第一电极和与第二半导体层电连接的第二电极; 形成覆盖所述第一电极和所述第二电极的至少一部分的至少一部分的保护膜; 并且在形成保护膜之后，去除延伸部分的暴露部分的一部分。

公开(公告)号：US10263152B2

公开(公告)日：2019-04-16

申请号：US15714791

申请日：2017-09-25

Applicant: NICHIA CORPORATION

Inventor： Tomohiro Shimooka ,  Masahiko Sano ,  Naoki Azuma

IPC: H01L29/06 ,  H01L33/32 ,  H01L33/00 ,  H01L33/02 ,  H01L33/20 ,  H01L33/12 ,  H01L33/16

Abstract: A nitride semiconductor element includes a sapphire substrate including: a main surface extending in a c-plane of the sapphire substrate, and a plurality of projections disposed at the main surface, the plurality of projections including at least one projection having an elongated shape in a plan view; and a nitride semiconductor layer disposed on the main surface of the sapphire substrate. The at least one projection has an outer edge extending in a longitudinal direction of the elongated shape, the outer edge extending in a direction oriented at an angle in a range of −10° to +10° with respect to an a-plane of the sapphire substrate in the plan view.

公开(公告)号：US09806232B2

公开(公告)日：2017-10-31

申请号：US14726132

申请日：2015-05-29

Applicant: NICHIA CORPORATION

Inventor： Tomohiro Shimooka ,  Masahiko Sano ,  Naoki Azuma

IPC: H01L33/20 ,  H01L33/32 ,  H01L33/00 ,  H01L33/02 ,  H01L33/12 ,  H01L33/16

CPC classification number: H01L33/32 ,  H01L33/007 ,  H01L33/025 ,  H01L33/12 ,  H01L33/16 ,  H01L33/20

Abstract: A nitride semiconductor element includes a sapphire substrate including: a main surface extending in a c-plane of the sapphire substrate, and a plurality of projections disposed at the main surface, the plurality of projections including at least one projection having an elongated shape in a plan view; and a nitride semiconductor layer disposed on the main surface of the sapphire substrate. The at least one projection has an outer edge extending in a longitudinal direction of the elongated shape, the outer edge extending in a direction oriented at an angle in a range of −10° to +10° with respect to an a-plane of the sapphire substrate in the plan view.

公开(公告)号：US09518718B2

公开(公告)日：2016-12-13

申请号：US14140379

申请日：2013-12-24

Applicant: NICHIA CORPORATION

Inventor： Daisuke Sanga ,  Tomonori Morizumi ,  Naoki Azuma ,  Keisuke Sejiki ,  Kunihito Sugimoto

IPC: F21V9/08 ,  H01L25/075 ,  H01L33/58 ,  G02B5/28 ,  H01L33/50

CPC classification number: F21V9/08 ,  G02B5/285 ,  H01L25/0753 ,  H01L33/50 ,  H01L33/58 ,  H01L2224/16225

Abstract: Provided is a bandpass filter for a light emitting device that can improve the light emission efficiency in use for a light emitting device, and a light emitting device that can obtain the high light emission efficiency by using the bandpass filter. The light emitting device includes a substrate; a light emitting element disposed over the substrate; a phosphor-containing layer containing at least one kind of phosphor; and a bandpass filter disposed over a surface of the phosphor-containing layer on the light emitting element side, the bandpass filter including a multilayer film having a plurality of first and second dielectric layers, the second dielectric layer being disposed over the first dielectric layer. The bandpass filter has a transmittance of 60% or more for light having a light emission peak wavelength of the light emitting element at an incident angle of 0 to 85°, and another transmittance of 40% or less for light having a light emission peak wavelength of at least one kind of phosphor at an incident angle of a Brewster's angle (θb)+5° (θb+5°) to 85° of the bandpass filter.

Abstract translation: 提供一种能够提高发光装置的发光效率的发光装置的带通滤光器，以及能够通过使用带通滤波器而获得高的发光效率的发光装置。 发光装置包括：基板; 设置在所述基板上的发光元件; 含有至少一种荧光体的含磷光体层; 以及设置在所述发光元件侧的所述含荧光体层的表面上的带通滤波器，所述带通滤波器包括具有多个第一和第二电介质层的多层膜，所述第二介电层设置在所述第一介电层上。 对于具有0〜85°的入射角的发光元件的发光峰值波长的光，对于具有发光峰值波长的光，带通滤波器的透射率为60％以上，另外透射率为40％以下 的至少一种荧光体，其入射角为带通滤波器的布鲁斯特角（θb）+ 5°（θb+ 5°）至85°。