公开(公告)号：US20190081452A1

公开(公告)日：2019-03-14

申请号：US16129045

申请日：2018-09-12

Applicant: NICHIA CORPORATION

Inventor： Soichiro MIURA ,  Masatsugu ICHIKAWA ,  Takehito SHIMATSU

IPC: H01S5/022 ,  F21V9/30 ,  F21V7/04 ,  F21V29/70

Abstract: An optical component includes a wavelength converting member including a fluorescent part having an upper surface, a lower surface, and one or more lateral surfaces, and containing a fluorescent material, and a light-reflecting part adjacently surrounding the one or more lateral surfaces of the fluorescent part when viewed from above, and a light-transmissive member disposed below the wavelength converting member. A dielectric multilayer film is disposed on an upper surface of the light-transmissive member at least at a region facing the fluorescent part, the dielectric multilayer film is configured to transmit excitation light incident from below the light-transmissive member and to reflect fluorescent light emitted from the fluorescent part. Further, a space is formed between the fluorescent part and the dielectric multilayer film.

公开(公告)号：US20160190417A1

公开(公告)日：2016-06-30

申请号：US14976702

申请日：2015-12-21

Applicant: NICHIA CORPORATION

Inventor： Masatsugu ICHIKAWA ,  Satoshi SHICHIJO ,  Takehito SHIMATSU

IPC: H01L33/64 ,  H01L33/62

CPC classification number: H01L33/64 ,  C04B37/00 ,  H01L23/3735 ,  H01L23/3736 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/33 ,  H01L33/0079 ,  H01L33/641 ,  H01L33/644 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2924/01047 ,  H01L2924/01079

Abstract: A semiconductor device includes an insulating substrate,a semiconductor element disposed on an upper surface of the substrate, a heat dissipation member, and a metal bonding layer that bonds the lower surface of the substrate to the upper surface of the heat dissipation member, and the area of the upper surface of the heat dissipation member is larger than the area of the lower surface of the substrate, and the metal bonding layer contacts the whole of the lower surface of the substrate and has an area larger than the area of the lower surface of the substrate, and the heat conductivity of the metal bonding layer is higher than the heat conductivity of the heat dissipation member.

Abstract translation: 半导体器件包括绝缘衬底，设置在衬底的上表面上的半导体元件，散热构件和将衬底的下表面粘合到散热构件的上表面的金属接合层，以及 散热构件的上表面的面积大于基板的下表面的面积，并且金属接合层与基板的整个下表面接触，并且具有比下表面的面积大的面积 并且金属接合层的导热率高于散热构件的导热率。

公开(公告)号：US20170279018A1

公开(公告)日：2017-09-28

申请号：US15466780

申请日：2017-03-22

Applicant: NICHIA CORPORATION

Inventor： Masatsugu ICHIKAWA ,  Yoshiki INOUE ,  Yoshiyuki AIHARA ,  Takehito SHIMATSU

IPC: H01L33/62 ,  H01L27/15

CPC classification number: H01L33/62 ,  H01L25/0753 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/44 ,  H01L2224/16225 ,  H01L2224/8192 ,  H01L2224/97 ,  H01L2933/0025 ,  H01L2933/0033 ,  H01L2933/0066

Abstract: A method for manufacturing a semiconductor device includes: providing a support with a semiconductor light-emitting element including a first electrode and a second electrode; providing a base including a first interconnect terminal and a second interconnect terminal; forming a first metal layer on the support to cover the first and the second electrodes; forming a second metal layer on the base to cover the first and the second interconnect terminals; arranging the first and second electrodes and the first and second interconnect terminals to respectively face each other, and providing electrical connection therebetween by atomic diffusion; and rendering electrically insulative or removing portions of the first metal layer and the second metal layer that are outside thereof defined between the first and second electrodes and the first and second interconnect terminals.